Infineon-Technologies-IPI50R399CP
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IPI50R399CP
CoolMOS
TM
Power Transistor
Features
Product Summary
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IPI50R399CP
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Parameter
Symbol Conditions
Unit
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max.
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IPI50R399CP
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2 Safe operating area
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3 Max. transient thermal impedance
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5 Typ. output characteristics
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10
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20
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15
20
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7 Drain-source on-state resistance
8 Typ. transfer characteristics
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60
100
140
180
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IPI50R399CP
9 Typ. gate charge
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10 Forward characteristics of reverse diode
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15
20
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11 Avalanche energy
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12 Drain-source breakdown voltage
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580
560
540
520
500
480
460
440
250
200
150
100
50
0
-60
-20
20
60
100
140
180
25
75
125
175
T
j
[°C]
T
j
[°C]
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IPI50R399CP
13 Typ. capacitances
14 Typ. Coss stored energy
C
6W”
V
=L
ꢐꢂ
V
@L
ꢅ
ꢉ
3
ꢂ
f
ꢅ
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*
%
O
E
`dd
=
W
(V
=L
)
10
4
5
4
3
2
1
<Zdd
10
3
10
2
<`dd
10
1
<cdd
10
0
0
0
0
50
100
150
200
100
200
300
400
500
V
DS
[V]
V
DS
[V]
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IPI50R399CP
Definition of diode switching characteristics
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IPI50R399CP
PG-TO262: Outline
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IPI50R399CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
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