Infineon-Technologies-IPL60R299CP
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IPL60R299CP
MOSFET
ThinPAKꢀ8×8
600VꢀCoolMOSªꢀCPꢀPowerꢀTransistor
TheꢀCoolMOS™ꢀCPꢀseriesꢀoffersꢀdevicesꢀwhichꢀprovideꢀallꢀbenefitsꢀofꢀa
fastꢀswitchingꢀSJꢀMOSFETꢀwhileꢀnotꢀsacrificingꢀeaseꢀofꢀuse.ꢀExtremelyꢀlow
switchingꢀandꢀconductionꢀlossesꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmore
efficient,ꢀmoreꢀcompact,ꢀlighter,ꢀandꢀcooler..
ThinPAK
ThinPAKꢀisꢀaꢀaꢀnewꢀleadlessꢀSMDꢀpackageꢀforꢀHVꢀMOSFETs.ꢀTheꢀnew
packageꢀhasꢀaꢀveryꢀsmallꢀfootprintꢀofꢀonlyꢀ64mm²ꢀ(vs.ꢀ150mm²ꢀforꢀthe
D²PAK)ꢀandꢀaꢀveryꢀlowꢀprofileꢀwithꢀonlyꢀ1mmꢀheightꢀ(vs.ꢀ4.4mmꢀforꢀthe
D²PAK).ꢀTheꢀsignificantlyꢀsmallerꢀpackageꢀsize,ꢀcombinedꢀwithꢀbenchmark
lowꢀparasiticꢀinductances,ꢀprovidesꢀdesignersꢀwithꢀaꢀnewꢀandꢀeffectiveꢀway
toꢀdecreaseꢀsystemꢀsolutionꢀsizeꢀinꢀpower-densityꢀdrivenꢀdesigns.
Drain
Pin 5
Features
Gate
Pin 1
•ꢀReducedꢀboardꢀspaceꢀconsumption
•ꢀIncreasedꢀpowerꢀdensity
•ꢀShortꢀcommutationꢀloop
Driver
Source
Pin 2
Power
Source
Pin 3,4
•ꢀSmoothꢀswitchingꢀwaveform
•ꢀeasyꢀtoꢀuseꢀproducts
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss
•ꢀQuallfiedꢀaccordingꢀtoꢀJEDECꢀ(J-STD20ꢀandꢀJESD22)ꢀforꢀtarget
applicationsꢀ(Server,ꢀAdapter)
•ꢀPb-freeꢀplating,ꢀHalogenꢀfree
Potentialꢀapplications
Server,ꢀAdapter
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
ds
@ T
jmax
R
DS(on),max
Value
650
0.299
22
Unit
V
Ω
Q
g,typ
nC
A
I
D,pulse
34
E
oss
@ 400V
Body diode di
F
/dt
4.2
µJ
200
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPL60R299CP
PG-VSON-4
6R299P
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.2,ꢀꢀ2017-09-06
600VꢀCoolMOSªꢀCPꢀPowerꢀTransistor
IPL60R299CP
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Final Data Sheet
2
Rev.ꢀ2.2,ꢀꢀ2017-09-06
600VꢀCoolMOSªꢀCPꢀPowerꢀTransistor
IPL60R299CP
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
11.1
7.0
T
C
= 25°C
A
Continuous drain current
1)
I
D
T
C
= 100°C
Pulsed drain current
2)
I
D,pulse
E
AS
–
–
–
–
–
–
–
–
–
–
34
A
T
C
=25 °C
Avalanche energy, single pulse
Avalanche energy, repetitive
3)
Avalanche current, repetitive
3)
MOSFET dv/dt ruggedness
290
0.44
4.4
50
mJ
mJ
A
I
D
=4.4 A; V
DD
= 50 V
E
AR
I
D
=4.4 A; V
DD
= 50 V
–
I
AR
dv/dt
V/ns
V
DS
ꢀ=0…480ꢀV
-20
-30
–
–
20
30
static;
V
Gate source voltage
V
GS
AC (f>1 Hz)
Power dissipation
P
tot
T
j
–
–
–
–
–
–
96
W
°C
°C
A
T
C
=25ꢀ°C
Operating Temperature
Storage Temperature
Continuous diode forward current
Diode pulse current
2)
-40
-40
–
150
125
11.1
34
–
T
stg
I
S
–
T
C
=25ꢀ°C
T
C
= 25°C
I
S,pulse
–
A
V
DS
ꢀ=0…400ꢀV,ꢀ
I
SD
<=ꢀ
I
D
,ꢀ
T
j
=25ꢀ°C
see table 8
Reverse diode dv/dt
4)
dv/dt
di
F
/dt
–
–
–
–
15
V/ns
V
DS
ꢀ=0…400ꢀV,ꢀ
I
SD
<=ꢀ
I
D
,ꢀ
T
j
=25ꢀ°C
see table 8
Maximum diode commutation speed
200
A/
µ
s
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
R
thJC
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction
– case
–
1.3
°C/W –
SMD version, device on PCB, 6cm²
cooling area
Thermal resistance, junction
– ambient
5
)
R
thJA
–
–
–
–
45
°C/W
Soldering temperature, wavesoldering
T
sold
260
°C
reflow MSL2a
only allowed at leads
1)
Limited by T
j max
. Maximum duty cycle
2)
Pulse width t
p
limited by T
j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as P
AV
=E
AR
*f; Pulse width t
p
limited by T
j,max
4)
ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀ
R
G
5)
Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70?m) for drain connection. PCB
is vertical without air stream cooling.
Final Data Sheet
3
Rev.ꢀ2.2,ꢀꢀ2017-09-06
600VꢀCoolMOSªꢀCPꢀPowerꢀTransistor
IPL60R299CP
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
2.5
Typ.
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
–
V
V
V
GS
=0ꢀV,ꢀ
I
D
=0.25ꢀmA
V
DS
=
V
GS
,ꢀ
I
D
=0.44ꢀmA
3
3.5
–
–
–
10
1
–
V
DS
=600ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=600ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=150ꢀ°C
Zero gate voltage drain current
Gate-source leakage curent
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
nA
Ω
I
GSS
–
–
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
0.27
0.70
0.299
–
V
GS
=10ꢀV,ꢀ
I
D
=6.6A,ꢀ
T
j
=25ꢀ°C
V
GS
=10ꢀV,ꢀ
I
D
=6.6ꢀA,ꢀ
T
j
=150ꢀ°C
R
DS(on)
R
G
–
1.9
–
Ω
f
=1ꢀMHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
1100
60
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0ꢀV,ꢀ
V
DS
=100ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=100ꢀV,ꢀ
f
=1ꢀMHz
C
oss
Effective output capacitance, energy
related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
46
120
10
5
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0ꢀV,ꢀ
V
DS
=0…480V
Effective output capacitance, time
related
2)
I
D
=constant,ꢀ
V
GS
=0ꢀV,ꢀ
V
DS
=0…480V
V
DD
=400ꢀV,ꢀ
V
GS
=13ꢀV,ꢀ
I
D
=6.6ꢀA,
R
G
=4.3
Ω
;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
V
DD
=400ꢀV,ꢀ
V
GS
=13ꢀV,ꢀ
I
D
=6.6ꢀA,
R
G
=4.3
Ω
;ꢀseeꢀtableꢀ9
V
DD
=400ꢀV,ꢀ
V
GS
=13ꢀV,ꢀ
I
D
=6.6ꢀA,
R
G
=4.3
Ω
;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
t
d(off)
t
f
40
5
V
DD
=400ꢀV,ꢀ
V
GS
=13ꢀV,ꢀ
I
D
=6.6ꢀA,
R
G
=4.3
Ω
;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
5
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=480ꢀV,ꢀ
I
D
=6.6ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=480ꢀV,ꢀ
I
D
=6.6ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=480ꢀV,ꢀ
I
D
=6.6ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=480ꢀV,ꢀ
I
D
=6.6ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
Q
gd
8
Q
g
22
Gate plateau voltage
V
plateau
5.0
1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ80%ꢀV
(BR)DSS
2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ80%ꢀV
(BR)DSS
Final Data Sheet
4
Rev.ꢀ2.2,ꢀꢀ2017-09-06
600VꢀCoolMOSªꢀCPꢀPowerꢀTransistor
IPL60R299CP
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
V
SD
t
rr
–
–
V
V
GS
=0ꢀV,ꢀ
I
F
=6.6ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=400ꢀV,ꢀ
I
F
=6.6ꢀd
i
F
/d
t
=100ꢀA/µs
see table 8
–
–
–
300
3.9
26
–
–
–
ns
V
R
=400ꢀV,ꢀ
I
F
=6.6ꢀd
i
F
/d
t
=100ꢀA/µs
see table 8
Reverse recovery charge
Q
rr
I
rrm
µC
A
V
R
=400ꢀV,ꢀ
I
F
=6.6ꢀd
i
F
/d
t
=100ꢀA/µs
see table 8
Peak reverse recovery current
Final Data Sheet
5
Rev.ꢀ2.2,ꢀꢀ2017-09-06
600VꢀCoolMOSªꢀCPꢀPowerꢀTransistor
IPL60R299CP
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
120
10
2
1 µs
100
80
60
40
20
0
10 µs
100 µs
10
1
1 ms
10
0
10 ms
DC
10
-1
10
-2
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
2
10
1
1 µs
10 µs
10
1
10
0
100 µs
0.5
1 ms
10 ms
DC
0.2
0.1
10
0
10
-1
0.05
0.02
0.01
10
-1
single pulse
10
-2
10
-2
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.2,ꢀꢀ2017-09-06
600VꢀCoolMOSªꢀCPꢀPowerꢀTransistor
IPL60R299CP
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
50
25
20 V
10 V
45
20 V
8 V
40
20
15
10
5
10 V
7 V
8 V
35
6 V
7 V
30
5.5 V
25
6 V
20
15
10
5
5 V
5.5 V
4.5 V
5 V
4.5 V
0
0
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.80
5 V
5.5 V
6 V
6.5 V
7 V
1.90
1.70
1.50
1.30
1.10
0.90
0.70
0.50
0.70
0.60
98%
0.50
typ
0.40
0.30
0.20
0.10
10 V
0
5
10
15
20
25
30
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=6.6ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
7
Rev.ꢀ2.2,ꢀꢀ2017-09-06
600VꢀCoolMOSªꢀCPꢀPowerꢀTransistor
IPL60R299CP
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
50
10
45
9
8
7
6
5
4
3
2
1
0
25 °C
40
35
30
25
120 V
480 V
20
150 °C
15
10
5
0
0
2
4
6
8
10
0
5
10
15
20
25
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=6.6ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
10
2
300
250
200
150
100
50
10
1
125 °C
25 °C
10
0
10
-1
0
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
150
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
E
AS
=f(
T
j
);ꢀ
I
D
=4.4ꢀA;ꢀ
V
DD
=50ꢀV
Final Data Sheet
8
Rev.ꢀ2.2,ꢀꢀ2017-09-06
600VꢀCoolMOSªꢀCPꢀPowerꢀTransistor
IPL60R299CP
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
680
10
5
660
640
620
600
580
560
540
10
4
Ciss
10
3
10
2
Coss
10
1
Crss
10
0
10
-1
-60
-20
20
60
100
140
180
0
100
200
300
400
500
600
T
j
ꢀ[°C]
V
DS
ꢀ[V]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=0.25ꢀmA
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
8
7
6
5
4
3
2
1
0
0
100
200
300
400
500
600
V
DS
ꢀ[V]
E
oss
=
f
(V
DS
)
Final Data Sheet
9
Rev.ꢀ2.2,ꢀꢀ2017-09-06
600VꢀCoolMOSªꢀCPꢀPowerꢀTransistor
IPL60R299CP
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
R
g
1
V
DS
R
g
2
I
F
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀswitchingꢀtimesꢀ(ss)
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
10
Rev.ꢀ2.2,ꢀꢀ2017-09-06
600VꢀCoolMOSªꢀCPꢀPowerꢀTransistor
IPL60R299CP
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-VSON-4,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.2,ꢀꢀ2017-09-06
600VꢀCoolMOSªꢀCPꢀPowerꢀTransistor
IPL60R299CP
RevisionꢀHistory
IPL60R299CP
Revision:ꢀ2017-09-06,ꢀRev.ꢀ2.2
Previous Revision
Revision Date
2.2
Subjects (major changes since last revision)
Updated MSL; style updated
2017-09-06
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
13
Rev.ꢀ2.2,ꢀꢀ2017-09-06
