Infineon-Technologies-IPLU300N04S4R8XTMA1
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IPLU300N04S4-R8
OptiMOS
™
-T2 Power-Transistor
Product Summary
V
DS
R
DS(on)
I
D
40
V
0.77
300
m
W
A
Features
H-PSOF-8-1
Tab
• N-channel – Enhancement mode
• AEC qualified
8
1
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant); 100% lead free
• Ultra low Rds(on)
1
8
Tab
• 100% Avalanche tested
Type
Package
Marking
4N04R8
IPLU300N04S4-R8
H-PSOF-8-1
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
T
C
=25°C,
V
GS
=10V
1)
I
D
Continuous drain current
300
A
T
C
=100 °C,
V
GS
=10 V
2)
300
Pulsed drain current
2)
I
D,pulse
E
AS
T
C
=25 °C
1200
750
Avalanche energy, single pulse
2)
Avalanche current, single pulse
Gate source voltage
I
D
=150 A
mJ
A
I
AS
–
300
V
GS
–
±20
V
P
tot
T
C
=25 °C
Power dissipation
429
W
°C
T
j
,
T
stg
Operating and storage temperature
–
-55 … +175
Rev. 1.0
page 1
2014-08-12
IPLU300N04S4-R8
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Thermal characteristics
2)
R
thJC
R
thJA
Thermal resistance, junction – case
SMD version, device on PCB
–
–
–
–
–
–
–
0.35 K/W
minimal footprint
62
40
6 cm
2
cooling area
3)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
GS
=0 V,
I
D
=1 mA
V
(BR)DSS
Drain-source breakdown voltage
Gate threshold voltage
40
2.0
–
–
–
V
V
GS(th)
V
DS
=
V
GS
,
I
D
=230 µA
3.0
0.1
4.0
10
V
DS
=40 V,
V
GS
=0 V,
T
j
=25 °C
I
DSS
Zero gate voltage drain current
µA
V
DS
=18 V,
V
GS
=0 V,
T
j
=85 °C
2)
–
1
20
I
GSS
V
GS
=20 V,
V
DS
=0 V
Gate-source leakage current
–
–
100 nA
R
DS(on)
V
GS
=10 V,
I
D
=100 A
Drain-source on-state resistance
–
0.53
0.77 mΩ
Rev. 1.0
page 2
2014-08-12
IPLU300N04S4-R8
Values
Parameter
Symbol
Conditions
Unit
min.
typ.
max.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
–
–
–
17650
3790
130
50
22945 pF
4930
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
300
–
–
–
–
ns
22
V
DD
=20 V,
V
GS
=10 V,
I
D
=300 A,
R
G
=3.5
W
t
d(off)
t
f
Turn-off delay time
Fall time
68
61
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
77
27
100 nC
68
Q
gd
V
DD
=32 V,
I
D
=300 A,
V
GS
=0 to 10 V
Q
g
221
4.4
287
V
plateau
Gate plateau voltage
–
V
A
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
I
S
–
–
–
–
300
T
C
=25 °C
I
S,pulse
1200
V
GS
=0 V,
I
F
=100 A,
T
j
=25 °C
V
SD
Diode forward voltage
–
0.9
1.3
V
Reverse recovery time
2)
t
rr
–
–
85
–
–
ns
V
R
=20 V,
I
F
=50A,
d
i
F
/d
t
=100 A/µs
Reverse recovery charge
2)
Q
rr
132
nC
1)
Current is limited by bondwire; with an
R
thJC
= 0.35 K/W the chip is able to carry 697A at 25°C.
2)
Defined by design. Not subject to production test.
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2014-08-12
IPLU300N04S4-R8
1 Power dissipation
2 Drain current
P
tot
= f(
T
C
);
V
GS
= 10 V
I
D
= f(
T
C
);
V
GS
= 10 V
500
400
300
200
100
0
350
300
250
200
150
100
50
0
0
50
100
150
200
0
50
100
150
200
T
C
[
°
C]
T
C
[
°
C]
3 Safe operating area
4 Max. transient thermal impedance
Z
thJC
= f(
t
p
)
I
D
= f(
V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
parameter:
D
=
t
p
/
T
10
0
10000
1000
1 µs
0.5
10 µs
10
-1
100 µs
0.1
1 ms
100
10
1
0.05
10
-2
0.01
single pulse
10
-3
0.1
1
10
100
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.0
page 4
2014-08-12
IPLU300N04S4-R8
5 Typ. output characteristics
I
D
= f(
V
DS
);
T
j
= 25 °C
parameter:
V
GS
6 Typ. drain-source on-state resistance
R
DS(on)
= (
I
D
);
T
j
= 25 °C
parameter:
V
GS
12
1200
10 V
6 V
6.5 V
5.5 V
5 V
10
8
1000
800
600
400
200
0
6 V
6
5.5 V
4
5 V
2
6.5 V
10 V
0
0
300
600
I
D
[A]
900
1200
0
1
2
3
4
5
6
7
V
DS
[V]
7 Typ. transfer characteristics
I
D
= f(
V
GS
);
V
DS
= 6V
parameter:
T
j
8 Typ. drain-source on-state resistance
R
DS(on)
= f(
T
j
);
I
D
= 100 A;
V
GS
= 10 V
1200
1000
800
1
0.8
0.6
0.4
0.2
600
400
175 °C
200
25 °C
-55 °C
0
-60
-20
20
60
100
140
180
2
4
6
8
T
j
[
°
C]
V
GS
[V]
Rev. 1.0
page 5
2014-08-12
IPLU300N04S4-R8
9 Typ. gate threshold voltage
V
GS(th)
= f(
T
j
);
V
GS
=
V
DS
parameter:
I
D
10 Typ. capacitances
C
= f(
V
DS
);
V
GS
= 0 V;
f
= 1 MHz
10
5
10
4
10
3
10
2
4
3.5
3
Ciss
2300 µA
Coss
2.5
230 µA
2
1.5
1
Crss
0
5
10
15
20
25
30
-60
-20
20
60
100
140
180
T
j
[
°
C]
V
DS
[V]
11 Typical forward diode characteristics
12 Avalanche characteristics
I
AS
= f(
t
AV
IF = f(V
SD
)
)
parameter:
T
j
parameter: T
j(start)
10
4
10
3
10
2
1000
25 °C
100 °C
100
150 °C
25 °C
175 °C
10
10
1
10
0
1
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
10
100
1000
V
SD
[V]
t
AV
[µs]
Rev. 1.0
page 6
2014-08-12
IPLU300N04S4-R8
13 Avalanche energy
E
AS
= f(
T
j
)
14 Drain-source breakdown voltage
V
BR(DSS)
= f(
T
j
);
I
D
= 1 mA
parameter:
I
D
44
43
42
41
40
39
38
1600
75 A
1200
800
150 A
400
300 A
0
-60
-20
20
60
100
140
180
25
75
125
175
T
j
[
°
C]
T
j
[
°
C]
15 Typ. gate charge
16 Gate charge waveforms
V
GS
= f(
Q
gate
);
I
D
= 300 A pulsed
parameter:
V
DD
12
10
8
V
GS
Q
g
8 V
32 V
6
4
Q
gate
2
Q
gd
Q
gs
0
0
40
80
120
160
200
240
Q
gate
[nC]
Rev. 1.0
page 7
2014-08-12
IPLU300N04S4-R8
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2014
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics. With respect to any examples or hints given herein, any typical values stated
herein and/or any information regarding the application of the device, Infineon Technologies hereby
disclaims any and all warranties and liabilities of any kind, including without limitation, warranties
of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the
express written approval of Infineon Technologies, if a failure of such components can reasonably be
expected to cause the failure of that life-support device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2014-08-12
IPLU300N04S4-R8
Revision History
Version
Date
Changes
Final Data Sheet
Revision 1.0
12.08.2014
Rev. 1.0
page 9
2014-08-12
