Infineon-Technologies-IPN80R900P7ATMA1
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IPN80R900P7
MOSFET
PG-SOT223
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
Theꢀlatestꢀ800VꢀCoolMOS™ꢀP7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀ800V
superꢀjunctionꢀtechnologiesꢀandꢀcombinesꢀbest-in-classꢀperformanceꢀwith
stateꢀofꢀtheꢀartꢀease-of-use,ꢀresultingꢀfromꢀInfineon’sꢀoverꢀ18ꢀyears
pioneeringꢀsuperꢀjunctionꢀtechnologyꢀinnovation.
Features
•ꢀBest-in-classꢀFOMꢀR
DS(on)
ꢀ*ꢀE
oss
;ꢀreducedꢀQ
g
,ꢀC
iss
,ꢀandꢀC
oss
•ꢀBest-in-classꢀDPAKꢀR
DS(on)
•ꢀBest-in-classꢀV
(GS)th
ꢀofꢀ3VꢀandꢀsmallestꢀꢀV
(GS)th
ꢀvariationꢀofꢀ±0.5V
•ꢀIntegratedꢀZenerꢀDiodeꢀESDꢀprotection
•ꢀFullyꢀqualifiedꢀacc.ꢀJEDECꢀforꢀIndustrialꢀApplications
•ꢀFullyꢀoptimizedꢀportfolio
Drain
Pin 2, Tab
Benefits
•ꢀBest-in-classꢀperformance
Gate
Pin 1
•ꢀEnablingꢀhigherꢀpowerꢀdensityꢀdesigns,ꢀBOMꢀsavingsꢀandꢀlower
assemblyꢀcosts
•ꢀEasyꢀtoꢀdriveꢀandꢀtoꢀparallel
Source
Pin 3
•ꢀBetterꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures
•ꢀLessꢀproductionꢀissuesꢀandꢀreducedꢀfieldꢀreturns
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀforꢀfineꢀtuningꢀofꢀdesigns
Potentialꢀapplications
RecommendedꢀforꢀhardꢀandꢀsoftꢀswitchingꢀflybackꢀtopologiesꢀforꢀLED
Lighting,ꢀlowꢀpowerꢀChargersꢀandꢀAdapters,ꢀAudio,ꢀAUXꢀpowerꢀand
Industrialꢀpower.ꢀAlsoꢀsuitableꢀforꢀPFCꢀstageꢀinꢀConsumerꢀapplications
andꢀSolar.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j=25°C
R
DS(on),max
Q
g,typ
Value
800
0.90
15
Unit
V
Ω
nC
A
I
D
6
E
oss
@ 500V
V
GS(th),typ
1.4
3
µJ
V
ESD class (HBM)
2
–
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPN80R900P7
PG-SOT223
80R900
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2018-02-09
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN80R900P7
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2018-02-09
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN80R900P7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
6
3.9
T
C
=25°C
A
Continuous drain current
1)
I
D
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
E
AS
–
–
–
–
–
–
–
–
–
–
14
A
T
C
=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
13
mJ
mJ
A
I
D
=0.9A; V
DD
=50V
I
D
=0.9A; V
DD
=50V
–
E
AR
0.11
0.9
100
I
AR
dv/dt
V/ns
V
DS
=0ꢀtoꢀ400V
-20
-30
–
–
20
30
static;
V
Gate source voltage
V
GS
AC (f>1 Hz)
Power dissipation
P
tot
–
–
–
–
–
–
–
7.0
150
1.7
14
1
W
°C
A
T
C
=25°C
–
Operating and storage temperature
Continuous diode forward current
Diode pulse current
2)
Reverse diode dv/dt
3)
Maximum diode commutation speed
3)
di
f
/dt
T
j
,ꢀ
T
stg
I
S
-55
–
–
–
–
T
C
=25°C
T
C
=25°C
I
S,pulse
A
dv/dt
V/ns
V
DS
=0ꢀtoꢀ400V,ꢀ
I
SD
<=1.1A,ꢀ
T
j
=25°C
A/
µ
s
V
DS
=0ꢀtoꢀ400V,ꢀ
I
SD
<=1.1A,ꢀ
T
j
=25°C
50
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
17.8
160
Thermal resistance, junction
– solder
point
R
thJS
–
–
–
–
°C/W –
Thermal resistance, junction
– ambient
R
thJA
°C/W Device
on PCB, minimal footprint
Device on 40mm*40mm*1.5mm
epoxy PCB FR4 with 6cm
2
(one
Thermal resistance, junction
– ambient
R
thJA
layer 70
µ
m thickness) copper area
for drain connection and cooling.
PCB is vertical without air stream
cooling.
–
–
–
–
75
°C/W
soldered on copper area
Soldering temperature, wave- & reflow
T
sold
260
°C
reflow MSL1
soldering allowed
1)
DPAK equivalent. Limited by T
j max
. Maximum duty cycle D=0.5
2)
Pulse width t
p
limited by T
j,max
3)
ꢀ
V
DClink
=400V;ꢀ
V
DS,peak
<
V
(BR)DSS
;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀ
R
G
;ꢀꢀ
t
cond
<2
µ
s
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2018-02-09
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN80R900P7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
800
2.5
Typ.
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
–
V
V
V
GS
=0V,ꢀ
I
D
=1mA
3
3.5
V
DS
=
V
GS
,ꢀ
I
D
=0.11mA
–
–
–
10
1
–
V
DS
=800V,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=800V,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
I
DSS
µ
A
Gate-source leakage curent incl. zener
diode
I
GSS
R
DS(on)
R
G
–
–
1
µA
V
GS
=20V,ꢀ
V
DS
=0V
–
–
0.77
1.99
0.90
–
V
GS
=10V,ꢀ
I
D
=2.2A,ꢀ
T
j
=25°C
V
GS
=10V,ꢀ
I
D
=2.2A,ꢀ
T
j
=150°C
Drain-source on-state resistance
Gate resistance
Ω
Ω
–
1.4
–
f
=250kHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
350
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=500V,ꢀ
f
=250kHz
V
GS
=0V,ꢀ
V
DS
=500V,ꢀ
f
=250kHz
C
oss
6
Effective output capacitance, energy
related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
11
135
12
8
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0ꢀtoꢀ500V
Effective output capacitance, time
related
2)
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0ꢀtoꢀ500V
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=2.2A,
R
G
=15
Ω
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=2.2A,
R
G
=15
Ω
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=2.2A,
R
G
=15
Ω
Turn-off delay time
Fall time
t
d(off)
t
f
40
20
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=2.2A,
R
G
=15
Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
2
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=640V,ꢀ
I
D
=2.2A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=640V,ꢀ
I
D
=2.2A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=640V,ꢀ
I
D
=2.2A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=640V,ꢀ
I
D
=2.2A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
6
Q
g
15
Gate plateau voltage
V
plateau
4.5
1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ500V
2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ500V
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2018-02-09
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN80R900P7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
V
SD
t
rr
–
–
–
–
–
–
–
–
V
V
GS
=0V,ꢀ
I
F
=2.2A,ꢀ
T
f
=25°C
Reverse recovery time
610
5
ns
µC
A
V
R
=400V,ꢀ
I
F
=1.1A,ꢀd
i
F
/d
t
=50A/µs
V
R
=400V,ꢀ
I
F
=1.1A,ꢀd
i
F
/d
t
=50A/µs
V
R
=400V,ꢀ
I
F
=1.1A,ꢀd
i
F
/d
t
=50A/µs
Reverse recovery charge
Peak reverse recovery current
Q
rr
I
rrm
11
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2018-02-09
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN80R900P7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
8
10
2
10 µs
100 µs
1 µs
10
1
10
0
1 ms
10 ms
DC
6
4
2
0
10
-1
10
-2
10
-3
10
-4
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
2
10
2
10 µs
1 µs
100 µs
10
1
1 ms
10 ms
0.5
10
0
10
1
DC
0.2
10
-1
10
-2
10
-3
10
-4
0.1
0.05
10
0
0.02
0.01
single pulse
10
-1
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2018-02-09
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN80R900P7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
18
12
20 V
10 V
20 V
10 V
8 V
16
14
12
10
8
7 V
10
8
8 V
7 V
6 V
6 V
5.5 V
5 V
6
5.5 V
6
4
5 V
4.5 V
4
2
4.5 V
2
0
0
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
4.5
2.4
6 V
5 V
5.5 V
2.2
2.0
1.8
1.6
1.4
6.5 V
4.0
3.5
3.0
2.5
2.0
1.5
1.0
7 V
10 V
1.2
98%
1.0
0.8
0.6
0.4
0.2
typ
0
5
10
15
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=2.2ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2018-02-09
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN80R900P7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
16
10
25 °C
9
8
7
14
12
10
640 V
120 V
6
5
4
3
2
1
0
8
150 °C
6
4
2
0
0
2
4
6
8
10
12
0
5
10
15
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=2.2ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
10
2
14
25 °C
125 °C
12
10
8
10
1
6
10
0
4
2
10
-1
0
0.0
0.5
1.0
1.5
2.0
2.5
25
50
75
100
125
150
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
E
AS
=f(
T
j
);ꢀ
I
D
=0.9ꢀA;ꢀ
V
DD
=50ꢀV
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2018-02-09
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN80R900P7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
950
10
4
900
850
800
750
700
10
3
Ciss
10
2
Coss
10
1
Crss
10
0
10
-1
-75 -50 -25
0
25
50
75 100
125 150 175
0
100
200
300
400
500
T
j
ꢀ[°C]
V
DS
ꢀ[V]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
100
200
300
400
500
600
700
800
V
DS
ꢀ[V]
E
oss
=
f
(V
DS
)
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2018-02-09
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN80R900P7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
R
g
1
V
DS
R
g
2
I
F
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2018-02-09
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN80R900P7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00180553
0
SCALE
MILLIMETERS
DIM
MIN
1.52
–
MAX
1.80
0.10
1.70
0.80
3.10
0.32
6.70
7.30
3.70
2.5
A
A1
A2
b
0
2.5
1,50
5mm
0.60
2.95
0.24
6.30
6.70
3.30
b2
c
EUROPEAN PROJECTION
D
E
E1
e
2.3 BASIC
4.6 BASIC
e1
L
ISSUE DATE
24-02-2016
0.75
1.10
N
3
REVISION
O
ꢀ
ꢁꢀ
01
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-SOT223,ꢀdimensionsꢀinꢀmmꢀ-ꢀIndustrialꢀGrade
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2018-02-09
800VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPN80R900P7
RevisionꢀHistory
IPN80R900P7
Revision:ꢀ2018-02-09,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
Corrected front page text
2017-06-23
2018-02-09
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.
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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2018-02-09
