Infineon-Technologies-IPN95R1K2P7

IPN95R1K2P7  

MOSFET  

PG-SOT223  

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice  

Theꢀlatestꢀ950VꢀCoolMOS™ꢀP7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀ950V  

superꢀjunctionꢀtechnologiesꢀandꢀcombinesꢀbest-in-classꢀperformanceꢀwith  

stateꢀofꢀtheꢀartꢀease-of-use,ꢀresultingꢀfromꢀInfineon’sꢀoverꢀ18ꢀyears  

pioneeringꢀsuperꢀjunctionꢀtechnologyꢀinnovation.  

Features  

•ꢀBest-in-classꢀFOMꢀR

DS(on)

ꢀ*ꢀE

oss

;ꢀreducedꢀQ

g

,ꢀC

iss

,ꢀandꢀC

oss  

•ꢀBest-in-classꢀSOT-223ꢀR

DS(on)  

•ꢀBest-in-classꢀV

(GS)th

ꢀofꢀ3VꢀandꢀsmallestꢀꢀV

(GS)th

ꢀvariationꢀofꢀ±0.5V  

•ꢀIntegratedꢀZenerꢀDiodeꢀESDꢀprotection  

•ꢀBest-in-classꢀCoolMOS™ꢀqualityꢀandꢀreliability  

•ꢀFullyꢀoptimizedꢀportfolio  

Drain  

Pin 2  

Benefits  

•ꢀBest-in-classꢀperformance  

*1  

Gate  

Pin 1  

*2  

•ꢀEnablingꢀhigherꢀpowerꢀdensityꢀdesigns,ꢀBOMꢀsavingsꢀandꢀlower  

assemblyꢀcosts  

•ꢀEasyꢀtoꢀdriveꢀandꢀtoꢀparallel  

Source  

Pin 3  

*1: Internal body diode  

*2: Integrated ESD diode  

•ꢀBetterꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures  

•ꢀLessꢀproductionꢀissuesꢀandꢀreducedꢀfieldꢀreturns  

•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀforꢀfineꢀtuningꢀofꢀdesigns  

Potentialꢀapplications  

RecommendedꢀforꢀflybackꢀtopologiesꢀforꢀLEDꢀLighting,ꢀlowꢀpower  

ChargersꢀandꢀAdapters,ꢀSmartꢀMeter,ꢀAUXꢀpowerꢀandꢀIndustrialꢀpower.  

AlsoꢀsuitableꢀforꢀPFCꢀstageꢀinꢀConsumerꢀandꢀSolarꢀapplications.  

ProductꢀValidation:

ꢀFullyꢀqualifiedꢀacc.ꢀJEDECꢀforꢀIndustrialꢀApplications  

Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate  

orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.  

Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters  

Parameter  

V

DS

@ T

j=25°C  

R

DS(on),max  

Q

g,typ  

Value  

950  

1.2  

15  

Unit  

V

Ω

nC  

A

I

D  

6

E

oss

@ 500V  

V

GS(th),typ  

1.3  

3

µJ  

V

ESD class (HBM)  

2

–

Typeꢀ/ꢀOrderingꢀCode  

Package  

Marking  

RelatedꢀLinks  

IPN95R1K2P7  

PG-SOT223  

95R1K2  

see Appendix A  

Final Data Sheet  

1

Rev.ꢀ2.0,ꢀꢀ2018-06-01  

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice  

IPN95R1K2P7  

TableꢀofꢀContents  

Description .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1  

Maximum ratings

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

3  

Thermal characteristics

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4  

Electrical characteristics

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

5  

Electrical characteristics diagrams

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

7  

Test Circuits

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

11  

Package Outlines

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

12  

Appendix A

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

13  

Revision History

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

14  

Trademarks .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

14  

Disclaimer .

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

14  

Final Data Sheet  

2

Rev.ꢀ2.0,ꢀꢀ2018-06-01  

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice  

IPN95R1K2P7  

1ꢀꢀꢀꢀꢀMaximumꢀratings  

atꢀ

T

j

ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified  

Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings  

Values  

Typ.  

Parameter  

Symbol  

Unit Noteꢀ/ꢀTestꢀCondition  

Min.  

Max.  

–

–

–

–

6

3.7  

T

C

=25°C  

A

Continuous drain current

1)  

I

D  

T

C

=100°C  

Pulsed drain current

2)  

I

D,pulse  

E

AS  

–

–

–

–

–

–

16  

A

T

C

=25°C  

Avalanche energy, single pulse  

Avalanche energy, repetitive  

11  

mJ  

mJ  

I

D

=0.7A; V

DD

=50V; see table 10  

I

D

=0.7A; V

DD

=50V; see table 10  

E

AR  

0.14  

Application (Flyback) relevant  

avalanche current, single pulse

3)  

measured with standard leakage  

inductance of transformer of 10µH  

I

AS  

–

3.0  

–

A

MOSFET dv/dt ruggedness  

Gate source voltage (static)  

Gate source voltage (dynamic)  

Power dissipation  

dv/dt  

V

GS  

V

GS  

P

tot  

T

stg  

T

j  

–

–

–

–

–

–

–

–

–

–

100  

20  

30  

7

V/ns

V

DS

=0…400V  

-20  

-30  

–

V

static;  

V

AC (f>1 Hz)  

W

°C  

°C  

T

C

=25°C  

Storage temperature  

-55  

-55  

–

150  

150  

–

–

–

Operating junction temperature  

Mounting torque  

–

Ncm –  

Continuous diode forward current  

Diode pulse current

2)  

I

S  

–

1.5  

16  

A

A

T

C

=25°C  

I

S,pulse  

–

T

C

=25°C  

V

DS

=0…400V,ꢀ

I

SD

<=1.4A,ꢀ

T

j

=25°Cꢀꢀꢀꢀ  

Reverse diode dv/dt

4)  

dv/dt  

–

–

1

V/ns  

see table 8  

V

DS

=0…400V,ꢀ

I

SD

<=1.4A,ꢀ

T

j

=25°Cꢀꢀꢀꢀ  

Maximum diode commutation speed  

Insulation withstand voltage  

di

F

/dt  

–

–

–

–

50  

A/

µ

s  

see table 8  

V

ISO  

n.a.  

V

V

rms

,ꢀ

T

C

=25°C,ꢀ

t

=1min  

Final Data Sheet  

3

Rev.ꢀ2.0,ꢀꢀ2018-06-01  

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice  

IPN95R1K2P7  

2ꢀꢀꢀꢀꢀThermalꢀcharacteristics  

Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics  

Values  

Parameter  

Symbol  

Unit Noteꢀ/ꢀTestꢀCondition  

Min.  

Typ.  

Max.  

Thermal resistance, junction

 

– case  

R

thJC  

–

–

–

–

17.41 °C/W

 

–  

Thermal resistance, junction

 

– ambient

 

R

thJA  

160  

75  

°C/W device

 

on PCB, minimal footprint  

Device on 40mm*40mm*1.5mm  

epoxy PCB FR4 with 6cm² (one  

layer, 70µm thickness) copper area  

for drain connection and cooling.  

PCB is vertical without air stream  

cooling.  

Thermal resistance, junction

 

– ambient  

for SMD version  

R

thJA  

–

–

35  

–

°C/W  

°C  

Soldering temperature, wave- & reflow  

soldering allowed  

T

sold  

260  

reflow MSL1  

Final Data Sheet  

4

Rev.ꢀ2.0,ꢀꢀ2018-06-01  

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice  

IPN95R1K2P7  

3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics  

atꢀ

T

j

=25°C,ꢀunlessꢀotherwiseꢀspecified  

Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics  

Values  

Parameter  

Symbol  

Unit Noteꢀ/ꢀTestꢀCondition  

Min.  

950  

2.5  

Typ.  

Max.  

–

Drain-source breakdown voltage  

Gate threshold voltage  

V

(BR)DSS  

V

(GS)th  

–

V

V

V

GS

=0V,ꢀ

I

D

=1mA  

3

3.5  

V

DS

=

V

GS

,ꢀ

I

D

=0.14mA  

–

–

–

10  

1

–

V

DS

=950V,ꢀ

V

GS

=0V,ꢀ

T

j

=25°C  

V

DS

=950V,ꢀ

V

GS

=0V,ꢀ

T

j

=150°C  

Zero gate voltage drain current  

Gate-source leakage current  

Drain-source on-state resistance  

Gate resistance  

I

DSS  

µ

A  

I

GSS  

–

–

1000 nA  

V

GS

=20V,ꢀ

V

DS

=0V  

–

–

1.03  

2.284  

1.2  

Ω

–

V

GS

=10V,ꢀ

I

D

=2.7A,ꢀ

T

j

=25°C  

V

GS

=10V,ꢀ

I

D

=2.7A,ꢀ

T

j

=150°C  

R

DS(on)  

R

G  

–

1

–

Ω

f

=250kHz,ꢀopenꢀdrain  

Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics  

Values  

Typ.  

478  

Parameter  

Symbol  

Unit Noteꢀ/ꢀTestꢀCondition  

Min.  

Max.  

Input capacitance  

Output capacitance  

C

iss  

–

–

–

–

pF  

pF  

V

GS

=0V,ꢀ

V

DS

=400V,ꢀ

f

=250kHz  

V

GS

=0V,ꢀ

V

DS

=400V,ꢀ

f

=250kHz  

C

oss  

7

Effective output capacitance, energy  

related

1)  

C

o(er)  

C

o(tr)  

t

d(on)  

t

r  

–

–

–

–

–

–

12  

120  

7

–

–

–

–

–

–

pF  

pF  

ns  

ns  

ns  

ns  

V

GS

=0V,ꢀ

V

DS

=0…400V  

Effective output capacitance, time  

related

2)  

I

D

=constant,ꢀ

V

GS

=0V,ꢀ

V

DS

=0…400V  

V

DD

=400V,ꢀ

V

GS

=13V,ꢀ

I

D

=2.7A,  

R

G

=10.2

Ω

;ꢀseeꢀtableꢀ9  

Turn-on delay time  

Rise time  

V

DD

=400V,ꢀ

V

GS

=13V,ꢀ

I

D

=2.7A,  

R

G

=10.2

Ω

;ꢀseeꢀtableꢀ9  

10  

36  

12  

V

DD

=400V,ꢀ

V

GS

=13V,ꢀ

I

D

=2.7A,  

R

G

=10.2

Ω

;ꢀseeꢀtableꢀ9  

Turn-off delay time  

Fall time  

t

d(off)  

t

f  

V

DD

=400V,ꢀ

V

GS

=13V,ꢀ

I

D

=2.7A,  

R

G

=10.2

Ω

;ꢀseeꢀtableꢀ9  

Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics  

Values  

Typ.  

2

Parameter  

Symbol  

Unit Noteꢀ/ꢀTestꢀCondition  

Min.  

Max.  

Gate to source charge  

Gate to drain charge  

Gate charge total  

Q

gs  

–

–

–

–

–

–

–

–

nC  

nC  

nC  

V

V

DD

=760V,ꢀ

I

D

=2.7A,ꢀ

V

GS

=0ꢀtoꢀ10V  

V

DD

=760V,ꢀ

I

D

=2.7A,ꢀ

V

GS

=0ꢀtoꢀ10V  

V

DD

=760V,ꢀ

I

D

=2.7A,ꢀ

V

GS

=0ꢀtoꢀ10V  

V

DD

=760V,ꢀ

I

D

=2.7A,ꢀ

V

GS

=0ꢀtoꢀ10V  

Q

gd  

5

Q

g  

15  

Gate plateau voltage  

V

plateau  

4.4  

Final Data Sheet  

5

Rev.ꢀ2.0,ꢀꢀ2018-06-01  

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice  

IPN95R1K2P7  

Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics  

Values  

Typ.  

0.9  

Parameter  

Symbol  

Unit Noteꢀ/ꢀTestꢀCondition  

Min.  

Max.  

Diode forward voltage  

Reverse recovery time  

V

SD  

t

rr  

–

–

V

V

GS

=0V,ꢀ

I

F

=2.7A,ꢀ

T

j

=25°C  

V

R

=400V,ꢀ

I

F

=1.4A,ꢀd

i

F

/d

t

=50A/µs;  

see table 8  

–

–

–

560  

3

–

–

–

ns  

V

R

=400V,ꢀ

I

F

=1.4A,ꢀd

i

F

/d

t

=50A/µs;  

see table 8  

Reverse recovery charge  

Q

rr  

I

rrm  

µC  

A

V

R

=400V,ꢀ

I

F

=1.4A,ꢀd

i

F

/d

t

=50A/µs;  

see table 8  

Peak reverse recovery current  

8

Final Data Sheet  

6

Rev.ꢀ2.0,ꢀꢀ2018-06-01  

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice  

IPN95R1K2P7  

4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams  

Diagramꢀ1:ꢀPowerꢀdissipation  

Diagramꢀ2:ꢀSafeꢀoperatingꢀarea  

8

10

2  

10

1  

10

0  

1 µs  

10 µs  

6

4

2

0

100 µs  

10

-1  

10

-2  

10

-3  

10

-4  

10

-5  

10

-6  

1 ms  

10 ms  

DC  

0

25  

50  

75  

100  

125  

150  

10

0  

10

1  

10

2  

10

3  

T

C

ꢀ[°C]  

V

DS

ꢀ[V]  

P

tot

=f(

T

C

)  

I

D

=f(

V

DS

);ꢀ

T

C

=25ꢀ°C;ꢀ

D

=0;ꢀparameter:ꢀ

t

p  

Diagramꢀ3:ꢀSafeꢀoperatingꢀarea  

Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance  

10

2  

10

2  

10

1  

10

0  

1 µs  

10 µs  

10

1  

100 µs  

0.5  

10

-1  

10

-2  

10

-3  

10

-4  

10

-5  

10

-6  

0.2  

0.1  

1 ms  

10 ms  

10

0  

0.05  

0.02  

0.01  

DC  

single pulse  

10

-1  

10

0  

10

1  

10

2  

10

3  

10

-5  

10

-4  

10

-3  

10

-2  

10

-1  

10

0  

10

1  

V

DS

ꢀ[V]  

t

p

ꢀ[s]  

I

D

=f(

V

DS

);ꢀ

T

C

=80ꢀ°C;ꢀ

D

=0;ꢀparameter:ꢀ

t

p  

Z

thJC

ꢀ=f(

t

P

);ꢀparameter:ꢀ

D=t

p

/

T  

Final Data Sheet  

7

Rev.ꢀ2.0,ꢀꢀ2018-06-01  

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice  

IPN95R1K2P7  

Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics  

Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics  

12  

8

20 V  

10 V  

8 V  

20 V  

9

6

7 V  

6 V  

10 V  

8 V  

7 V  

5.5 V  

6 V  

5.5 V  

6

4

2

0

5 V  

5 V  

4.5 V  

4.5 V  

3

0

0

5

10  

15  

20  

0

5

10  

15  

20  

V

DS

ꢀ[V]  

V

DS

ꢀ[V]  

I

D

=f(

V

DS

);ꢀ

T

j

=25ꢀ°C;ꢀparameter:ꢀ

V

GS  

I

D

=f(

V

DS

);ꢀ

T

j

=125ꢀ°C;ꢀparameter:ꢀ

V

GS  

Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance  

Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance  

3.400  

2.5  

20 V  

10 V  

2.900  

2.0  

1.5  

1.0  

0.5  

6 V  

5.5 V  

4.5 V  

4 V  

2.400  

1.900  

1.400  

0

3

6

-50  

-25  

0

25  

50  

75  

100  

125  

150  

I

D

ꢀ[A]  

T

j

ꢀ[°C]  

R

DS(on)

=f(

I

D

);ꢀ

T

j

=125ꢀ°C;ꢀparameter:ꢀ

V

GS  

R

DS(on)

=f(

T

j

);ꢀ

I

D

=2.7ꢀA;ꢀ

V

GS

=10ꢀV  

Final Data Sheet  

8

Rev.ꢀ2.0,ꢀꢀ2018-06-01  

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice  

IPN95R1K2P7  

Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics  

Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge  

12  

12  

10  

8

25 °C  

9

120 V  

760 V  

6

6

4

2

0

150 °C  

3

0

0

2

4

6

8

10  

12  

0

3

6

9

12  

15  

18  

V

GS

ꢀ[V]  

Q

gate

ꢀ[nC]  

I

D

=f(

V

GS

);ꢀ

V

DS

=20V;ꢀparameter:ꢀ

T

j  

V

GS

=f(

Q

gate

);ꢀ

I

D

=2.7ꢀAꢀpulsed;ꢀparameter:ꢀ

V

DD  

Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode  

Diagramꢀ12:ꢀAvalancheꢀenergy  

10

2  

12  

9

6

3

0

10

1  

25 °C  

125 °C  

10

0  

10

-1  

0.0  

0.2  

0.4  

0.6  

0.8  

1.0  

1.2  

1.4  

1.6  

1.8  

25  

50  

75  

100  

125  

150  

V

SD

ꢀ[V]  

T

j

ꢀ[°C]  

I

F

=f(

V

SD

);ꢀparameter:ꢀ

T

j  

E

AS

=f(

T

j

);ꢀ

I

D

=0.7ꢀA;ꢀ

V

DD

=50ꢀV  

Final Data Sheet  

9

Rev.ꢀ2.0,ꢀꢀ2018-06-01  

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice  

IPN95R1K2P7  

Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage  

Diagramꢀ14:ꢀTyp.ꢀcapacitances  

1100  

10

4  

1050  

1000  

950  

10

3  

Ciss  

10

2  

10

1  

Coss  

900  

10

0  

Crss  

850  

10

-1  

-50  

-25  

0

25  

50  

75  

100  

125  

150  

0

100  

200  

300  

400  

500  

T

j

ꢀ[°C]  

V

DS

ꢀ[V]  

V

BR(DSS)

=f(

T

j

);ꢀ

I

D

=1ꢀmA  

C

=f(

V

DS

);ꢀ

V

GS

=0ꢀV;ꢀ

f

=250ꢀkHz  

Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy  

5

4

3

2

1

0

0

200  

400  

600  

800  

1000  

V

DS

ꢀ[V]  

E

oss

=

f

(V

DS  

)

Final Data Sheet  

10  

Rev.ꢀ2.0,ꢀꢀ2018-06-01  

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice  

IPN95R1K2P7  

5ꢀꢀꢀꢀꢀTestꢀCircuits  

Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics  

Test circuit for diode characteristics  

Diode recovery waveform  

R

g

1  

V

DS  

R

g

2  

I

F  

R

g

1 = R

g

2  

Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes  

Switching times test circuit for inductive load  

Switching times waveform  

V

DS  

90%  

10%  

V

DS  

V

GS  

V

GS  

t

d(off)  

t

f  

t

d(on)  

t

on  

t

r  

t

off  

Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload  

Unclamped inductive load test circuit  

Unclamped inductive waveform  

V

(BR)DS  

I

D  

V

DS  

V

DS  

V

DS  

I

D  

Final Data Sheet  

11  

Rev.ꢀ2.0,ꢀꢀ2018-06-01  

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice  

IPN95R1K2P7  

6ꢀꢀꢀꢀꢀPackageꢀOutlines  

DOCUMENT NO.  

Z8B00180553  

0

SCALE  

MILLIMETERS  

DIM  

INCHES  

MIN  

1.52  

–

MAX  

1.80  

0.10  

1.70  

0.80  

3.10  

0.32  

6.70  

7.30  

3.70  

MIN  

0.060  

–

MAX  

2.5  

A

A1  

A2  

b

0.071  

0.004  

0.067  

0.031  

0.122  

0.013  

0.264  

0.287  

0.146  

0

2.5  

1,50  

0.059  

0.024  

0.116  

0.009  

0.248  

0.264  

0.130  

5mm  

0.60  

2.95  

0.24  

6.30  

6.70  

3.30  

b2  

c

EUROPEAN PROJECTION  

D

E

E1  

e

2.3 BASIC  

4.6 BASIC  

0.091 BASIC  

0.181 BASIC  

e1  

L

ISSUE DATE  

24-02-2016  

0.75  

1.10  

0.030  

0.043  

N

3

3

REVISION  

O

ꢀƒ  

ꢁꢀƒ  

ꢀƒ  

ꢁꢀƒ  

01  

Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-SOT223,ꢀdimensionsꢀinꢀmm/inches  

Final Data Sheet  

12  

Rev.ꢀ2.0,ꢀꢀ2018-06-01  

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice  

IPN95R1K2P7  

7ꢀꢀꢀꢀꢀAppendixꢀA  

Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks  

•

IFXꢀCoolMOSꢀP7ꢀWebpage:

•

IFXꢀCoolMOSꢀP7ꢀapplicationꢀnote:

•

IFXꢀCoolMOSꢀP7ꢀsimulationꢀmodel:

•

IFXꢀDesignꢀtools:

Final Data Sheet  

13  

Rev.ꢀ2.0,ꢀꢀ2018-06-01  

950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice  

IPN95R1K2P7  

RevisionꢀHistory  

IPN95R1K2P7  

Revision:ꢀ2018-06-01,ꢀRev.ꢀ2.0  

Previous Revision  

Revision Date  

Subjects (major changes since last revision)  

Release of final version  

2.0  

2018-06-01  

Trademarks  

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81726ꢀMünchen,ꢀGermany  

©ꢀ2018ꢀInfineonꢀTechnologiesꢀAG  

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pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  

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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  

failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  

aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  

intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  

reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  

Final Data Sheet  

14  

Rev.ꢀ2.0,ꢀꢀ2018-06-01