Infineon-Technologies-IPP023N04N-G
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IPP023N04N G
IPB023N04N G
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™
3 Power-Transistor
Product Summary
Features
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Maximum ratings,
2
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Value
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Parameter
Symbol Conditions
Unit
I
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IPP023N04N G
IPB023N04N G
Maximum ratings,
2
D
T
W
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=6CC
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Value
Parameter
Symbol Conditions
Unit
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Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R
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CA64:7:65
Static characteristics
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IPP023N04N G
IPB023N04N G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C
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IPP023N04N G
IPB023N04N G
1 Power dissipation
2 Drain current
P
“
4S”
T
8
#
I
9
4S”
T
8
ꢑꢈ
V
=H
“
ꢄ
ꢅ
/
200
100
80
60
40
20
0
150
100
50
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
9
4S”
V
9H
ꢑꢈ
T
8
ꢍ
ꢊ
ꢎ
Tꢂ
ꢈ
D
4(
A2
B2
>6D6Bꢘ
t
]
4 Max. transient thermal impedance
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t
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#
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A2
B2
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4
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10
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10
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ꢅ
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C
10
2
10
-1
(&)
98
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ꢄ
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10
1
10
-2
C:?
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AE=C6
10
0
10
-1
10
-3
10
-6
10
0
10
1
10
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
+
6Fꢔ
ꢄ
ꢔꢊ
A2
86
ꢋ
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ꢅ
ꢅ
ꢌ
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ꢄ
IPP023N04N G
IPB023N04N G
5 Typ. output characteristics
I
9
4S”
V
9H
ꢑꢈ
T
W
ꢍ
ꢊ
ꢎ
Tꢂ
6 Typ. drain-source on resistance
9H”[#
4S”
I
9
ꢑꢈ
T
W
ꢍ
ꢊ
ꢎ
Tꢂ
R
A2
B2
>6D6Bꢘ
V
=H
A2
B2
>6D6Bꢘ
V
=H
400
4
ꢄ
ꢅ
/
ꢕ
/
ꢎ
ꢔꢎ
/
ꢉ
ꢔꢎ
/
ꢉ
/
300
200
100
0
3
2
1
0
ꢉ
ꢔꢎ
/
ꢕ
/
ꢉ
/
ꢄ
ꢅ
/
ꢎ
ꢔꢎ
/
ꢎ
/
0
1
2
3
0
40
80
120
160
200
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
9
4S”
V
=H
ꢑꢈ
K
V
9H
g5*g
I
9
g
R
9H”[#ZNd
A2
B2
>6D6Bꢘ
T
W
8 Typ. forward transconductance
g
S_
4S”
I
9
ꢑꢈ
T
W
ꢍ
ꢊ
ꢎ
Tꢂ
400
300
200
100
0
250
200
150
100
50
ꢄ
ꢕ
ꢎ
Tꢂ
ꢊ
ꢎ
Tꢂ
0
0
1
2
3
4
5
6
7
0
40
80
120
160
200
V
GS
[V]
I
D
[A]
+
6Fꢔ
ꢄ
ꢔꢊ
A2
86
ꢎ
ꢊ
ꢅ
ꢅ
ꢌ
ꢃꢄ
ꢊ
ꢃꢄ
ꢄ
IPP023N04N G
IPB023N04N G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
9H”[#
4S”
T
W
ꢑꢈ
I
9
ꢍ
ꢌ
ꢅ
ꢇ
ꢈ
V
=H
ꢍ
ꢄ
ꢅ
/
V
=H”`U#
4S”
T
W
ꢑꢈ
V
=H
4
V
9H
ꢈ
I
9
ꢍ
ꢊ
ꢎ
ꢅ
#
6
5
4
4
3
2
1
0
3
ꢌ
ꢖ
ꢆ
2
1
0
`e]
-60
-20
20
60
T
j
[°C]
100
140
180
-60
-20
20
60
100
140
180
T
j
[°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I
<
4S”
V
H9
C
4S”
V
9H
ꢑꢈ
V
=H
ꢍ
ꢅ
/ꢈ
f
ꢍ
ꢄ
&
“
J
#
A2
B2
>6D6Bꢘ
T
W
10
4
10
3
8V__
8__
ꢄ
ꢕ
ꢎ
Tꢂ
ꢏ
ꢌ
ꢖ
ꢆ
10
3
10
2
10
1
10
2
ꢊ
ꢎ
Tꢂ
ꢄ
ꢕ
ꢎ
Tꢂ
ꢊ
ꢎ
Tꢂ
ꢏ
ꢌ
ꢖ
ꢆ
10
1
8^__
10
0
0
0
10
20
V
DS
[V]
30
40
0.5
1
1.5
2
V
SD
[V]
+
6Fꢔ
ꢄ
ꢔꢊ
A2
86
ꢉ
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ꢅ
ꢅ
ꢌ
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ꢊ
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IPP023N04N G
IPB023N04N G
13 Avalanche characteristics
6H
4S”
t
6K
ꢑꢈ
R
=H
ꢍ
ꢊ
ꢎ
”
14 Typ. gate charge
=H
4S”
Q
TN`R
ꢑꢈ
I
9
ꢍ
ꢓ
ꢅ
ꢇ
AE=C65
V
I
A2
B2
>6D6Bꢘ
T
W”_`N^`#
A2
B2
>6D6Bꢘ
V
99
100
12
ꢊ
ꢎ
Tꢂ
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ꢅ
ꢅ
Tꢂ
ꢊ
ꢅ
/
ꢄ
ꢎ
ꢅ
Tꢂ
10
8
ꢖ
/
ꢓ
ꢊ
/
10
6
4
2
1
10
-1
0
0
10
0
10
1
t
AV
[µs]
10
2
10
3
20
40
60
80
100
Q
gate
[nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
7G”9HH#
4S”
T
W
ꢑꢈ
I
9
ꢍ
ꢄ
>ꢇ
45
V
=H
Q
g
40
35
30
25
20
V
T _”`U#
Q
T
“
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U#
Q
_c
Q
T
Q
Q
g
ate
Q
T
_
-60
-20
20
60
100
140
180
T
j
[°C]
+
6Fꢔ
ꢄ
ꢔꢊ
A2
86
ꢕ
ꢊ
ꢅ
ꢅ
ꢌ
ꢃꢄ
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IPP023N04N G
IPB023N04N G
Package Outline
PG-TO263-3
+
6Fꢔ
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ꢔꢊ
A2
86
ꢖ
ꢊ
ꢅ
ꢅ
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IPP023N04N G
IPB023N04N G
Package Outline
PG-TO220-3
+
6Fꢔ
ꢄ
ꢔꢊ
A2
86
ꢌ
ꢊ
ꢅ
ꢅ
ꢌ
ꢃꢄ
ꢊ
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IPP023N04N G
IPB023N04N G
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
+
6Fꢔ
ꢄ
ꢔꢊ
A2
86
ꢄ
ꢅ
ꢊ
ꢅ
ꢅ
ꢌ
ꢃꢄ
ꢊ
ꢃꢄ
ꢄ
