Infineon-Technologies-IPP029N06NAKSA1
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MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
OptiMOS
TM
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPP029N06N
DataꢀSheet
Rev.ꢀ2.6
Final
PowerꢀManagementꢀ&ꢀMultimarket
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPP029N06N
TO-220-3
1ꢀꢀꢀꢀꢀDescription
tab
Features
•ꢀOptimizedꢀforꢀhighꢀperformanceꢀSMPS,ꢀe.g.ꢀsync.ꢀrec.
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC
1)
ꢀꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Drain
Pin 2, Tab
Parameter
Value
Unit
V
DS
60
V
Gate
Pin 1
R
DS(on),max
I
D
2.9
100
65
m
Ω
A
Source
Pin 3
Q
OSS
nC
nC
Q
G
(0V..10V)
56
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPP029N06N
PG-TO220-3
029N06N
–
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.ꢀ2.6,ꢀꢀ2015-02-10
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPP029N06N
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Final Data Sheet
3
Rev.ꢀ2.6,ꢀꢀ2015-02-10
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPP029N06N
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
–
–
–
–
–
–
100
100
24
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C
V
GS
=10ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C,ꢀ
R
thJA
ꢀ=50K/W
Continuous drain current
I
D
A
Pulsed drain current
1)
Avalanche energy, single pulse
2)
I
D,pulse
E
AS
–
–
–
–
400
110
20
A
T
C
=25ꢀ°C
–
mJ
V
I
D
=100ꢀA,ꢀ
R
GS
=25ꢀ
Ω
Gate source voltage
V
GS
-20
–
–
–
–
–
136
3.0
T
C
=25ꢀ°C
T
A
=25ꢀ°C,ꢀ
R
thJA
=50ꢀK/W
Power dissipation
P
tot
W
IEC climatic category;
DIN IEC 68-1: 55/175/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
175
°C
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Thermal resistance, junction – case,
bottom
R
thJC
R
thJA
R
thJA
T
sold
–
0.7
1.1
K/W
K/W
K/W
°C
–
Device on PCB,
minimal footprint
–
–
–
–
–
–
62
–
Device on PCB,
40
–
6 cm² cooling area
3)
Soldering temperature, wave and
reflow soldering are allowed
260
Reflow MSL1
1)
See figure 3 for more detailed information
2)
See figure 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
Final Data Sheet
4
Rev.ꢀ2.6,ꢀꢀ2015-02-10
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPP029N06N
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
60
Typ.
–
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
V
V
V
GS
=0ꢀV,ꢀ
I
D
=1ꢀmA
V
DS
=
V
GS
,ꢀ
I
D
=75ꢀµA
2.1
2.8
3.3
–
–
0.5
10
1
100
V
DS
=60ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=60ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
DSS
µA
nA
I
GSS
–
10
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
2.7
3.3
2.9
4.4
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA
V
GS
=6ꢀV,ꢀ
I
D
=25ꢀA
R
DS(on)
m
Ω
Gate resistance
1)
Transconductance
R
G
g
fs
0.65
80
1.3
1.95
–
Ω
–
160
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=100ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
1)
ꢀ
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
C
iss
C
oss
C
rss
–
–
–
4100 5125 pF
V
GS
=0ꢀV,ꢀ
V
DS
=30ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=30ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=30ꢀV,ꢀ
f
=1ꢀMHz
Output capacitance
980
39
1225 pF
Reverse transfer capacitance
78
–
pF
ns
V
DD
=30ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
,ext=3ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
17
15
30
8
V
DD
=30ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
,ext=3ꢀ
Ω
–
–
–
ns
ns
ns
V
DD
=30ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
,ext=3ꢀ
Ω
Turn-off delay time
Fall time
V
DD
=30ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
,ext=3ꢀ
Ω
1)
Defined by design. Not subject to production test
Final Data Sheet
5
Rev.ꢀ2.6,ꢀꢀ2015-02-10
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPP029N06N
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
1)
ꢀ
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
20
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
2)
Switching charge
Q
gs
–
–
–
–
–
–
–
–
–
nC
nC
nC
nC
nC
V
V
DD
=30ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=30ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=30ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=30ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=30ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=30ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DS
=0.1ꢀV,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
Q
g(th)
Q
gd
11
–
11
15
–
Q
sw
19
Gate charge total
2)
Q
g
56
66
–
Gate plateau voltage
Gate charge total, sync. FET
Output charge
2)
V
plateau
Q
g(sync)
Q
oss
4.8
49
–
nC
nC
65
82
V
DD
=30ꢀV,ꢀ
V
GS
=0ꢀV
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
–
Max.
120
480
1.2
86
Diode continuous forward current
Diode pulse current
I
S
–
–
–
–
–
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
t
rr
–
A
T
C
=25ꢀ°C
Diode forward voltage
Reverse recovery time
2)
1.0
54
77
V
V
GS
=0ꢀV,ꢀ
I
F
=100ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=30ꢀV,ꢀ
I
F
=100ꢀA,ꢀd
i
F
/d
t
=100ꢀA/µs
V
R
=30ꢀV,ꢀ
I
F
=100ꢀA,ꢀd
i
F
/d
t
=100ꢀA/µs
ns
nC
Reverse recovery charge
Q
rr
–
1)
See
″
Gate charge waveforms
″
for parameter definition
2)
Defined by design. Not subject to production test
Final Data Sheet
6
Rev.ꢀ2.6,ꢀꢀ2015-02-10
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPP029N06N
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
160
120
100
80
60
40
20
0
140
120
100
80
60
40
20
0
0
25
50
75
100
125
150
175
200
0
25
50
75
100
125
150
175
200
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
1
1 µs
10 µs
100 µs
10
2
10
0
0.5
1 ms
DC
10
1
0.2
0.1
10 ms
10
-1
0.05
0.02
0.01
10
0
single pulse
10
-1
10
-2
10
-1
10
0
10
1
10
2
10
-5
10
-4
10
-3
10
-2
10
-1
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
7
Rev.ꢀ2.6,ꢀꢀ2015-02-10
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPP029N06N
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
400
8
10 V
7 V
5 V
5.5 V
6 V
360
320
280
240
200
160
120
80
7
6
5
4
3
2
1
0
6 V
5.5 V
7 V
10 V
5 V
40
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
80
160
240
320
400
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
400
200
360
320
280
240
200
160
120
80
150
100
50
40
0
175 °C
25 °C
0
0
2
4
6
8
0
20
40
60
80
100
V
GS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
GS
);ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
g
fs
=f(
I
D
);ꢀ
T
j
=25ꢀ°C
Final Data Sheet
8
Rev.ꢀ2.6,ꢀꢀ2015-02-10
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPP029N06N
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
7.0
6.5
6.0
5.5
5.0
4.5
5
4
3
4.0
750 µA
max
3.5
75 µA
3.0
typ
2
2.5
2.0
1.5
1.0
0.5
0.0
1
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
);ꢀ
I
D
=100ꢀA;ꢀ
V
GS
=10ꢀV
V
GS(th)
=f(
T
j
);ꢀ
V
GS
=
V
DS
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
4
10
3
25 °C
175 °C
Ciss
10
3
10
2
10
1
10
2
10
1
10
0
Coss
Crss
0
20
40
60
0.0
0.5
1.0
1.5
2.0
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
9
Rev.ꢀ2.6,ꢀꢀ2015-02-10
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPP029N06N
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
3
12
10
8
30 V
48 V
12 V
10
2
100 °C
25 °C
6
125 °C
10
1
4
2
10
0
0
10
0
10
1
10
2
10
3
0
10
20
30
40
50
60
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j(start)
V
GS
=f(
Q
gate
);ꢀ
I
D
=100ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
70
66
62
58
54
50
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
10
Rev.ꢀ2.6,ꢀꢀ2015-02-10
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPP029N06N
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO220-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.6,ꢀꢀ2015-02-10
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPP029N06N
RevisionꢀHistory
IPP029N06N
Revision:ꢀ2015-02-10,ꢀRev.ꢀ2.6
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.5
2.6
Rev.2.5
2014-07-25
2015-02-10
Insert Rg min value = 0.65 Ohm
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LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
12
Rev.ꢀ2.6,ꢀꢀ2015-02-10
