Infineon-Technologies-IPP052N06L3-G
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IPB049N06L3 G
IPP052N06L3 G
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3 Power-Transistor
Product Summary
Features
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Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
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Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
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IPB049N06L3 G
IPP052N06L3 G
1 Power dissipation
2 Drain current
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60
40
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40
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50
100
150
200
0
50
100
150
200
T
C
[°C]
T
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[°C]
3 Safe operating area
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IPB049N06L3 G
IPP052N06L3 G
5 Typ. output characteristics
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280
240
200
160
120
80
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1
2
3
4
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80
160
240
320
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7 Typ. transfer characteristics
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180
160
140
120
100
80
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120
100
80
60
60
40
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100
150
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IPB049N06L3 G
IPP052N06L3 G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
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20
60
T
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[°C]
100
140
180
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20
60
100
140
180
T
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[°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
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13 Avalanche characteristics
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4
2
0
0
1
20
40
60
80
100
0.1
1
10
t
AV
[µs]
100
1000
Q
gate
[nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
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Published by
Infineon Technologies AG
81726 Munich, Germany
© 2009 Infineon Technologies AG
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