Infineon-Technologies-IPP055N03L-G
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IPP055N03L G
IPB055N03L G
Opti
MOS
™
3 Power-Transistor
Product Summary
Features
V
DS
30
5.5
50
V
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
1)
for target applications
R
DS(on),max
I
D
m
Ω
A
• N-channel, logic level
• Excellent gate charge x
R
DS(on)
product (FOM)
• Very low on-resistance
R
DS(on)
• Avalanche rated
• Pb-free plating; RoHS compliant
• Halogen-free according to IEC61249-2-21
Type
IPP055N03L G
IPB055N03L G
Package
Marking
PG-TO220-3-1
055N03L
PG-TO263-3
055N03L
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I
D
V
GS
=10 V,
T
C
=25 °C
Continuous drain current
50
50
A
V
GS
=10 V,
T
C
=100 °C
V
V
GS
=4.5 V,
T
C
=25 °C
50
50
GS
=4.5 V,
T
C
=100 °C
Pulsed drain current
2)
I
D,pulse
I
AS
T
C
=25 °C
350
50
Avalanche current, single pulse
3)
Avalanche energy, single pulse
T
C
=25 °C
E
AS
I
D
=35 A,
R
GS
=25
Ω
60
mJ
I
D
=50 A,
V
DS
=24 V,
d
i
/d
t
=200 A/µs,
Reverse diode d
v
/d
t
d
v
/d
t
6
kV/µs
V
T
j,max
=175 °C
V
GS
Gate source voltage
1)
J-STD20 and JESD22
±20
Rev. 1.04
page 1
2010-01-18
IPP055N03L G
IPB055N03L G
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
P
tot
T
C
=25 °C
Power dissipation
68
W
T
j
,
T
stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 … 175
55/175/56
°C
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R
thJC
Thermal resistance, junction – case
SMD version, device on PCB
–
–
–
–
–
–
2.2
62
40
K/W
R
thJA
minimal footprint
6 cm² cooling area
4)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=0 V,
I
D
=1 mA
Drain-source breakdown voltage
Gate threshold voltage
30
1
–
–
–
V
V
GS(th)
V
DS
=
V
GS
,
I
D
=250 µA
2.2
V
DS
=30 V,
V
GS
=0 V,
T
j
=25 °C
I
DSS
Zero gate voltage drain current
–
–
0.1
10
1
µA
V
DS
=30 V,
V
GS
=0 V,
100
T
j
=125 °C
I
GSS
V
GS
=20 V,
V
DS
=0 V
Gate-source leakage current
–
–
–
–
10
6.2
4.6
1.5
100 nA
Drain-source on-state resistance
5)
R
DS(on)
V
GS
=4.5 V,
I
D
=30 A
V
GS
=10 V,
I
D
=30 A
R
G
7.8
5.5
–
m
Ω
Gate resistance
Ω
|
V
DS
|>2|
I
D
|
R
DS(on)max
,
g
fs
Transconductance
38
75
–
S
I
D
=30 A
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
5)
Measured from drain tab to source pin
Rev. 1.04
page 2
2010-01-18
IPP055N03L G
IPB055N03L G
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C
iss
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
–
–
–
–
–
–
–
2400
920
49
3200 pF
V
GS
=0 V,
V
DS
=15 V,
C
oss
C
rss
t
d(on)
t
r
1200
–
f
=1 MHz
6.7
5.2
25
–
–
–
–
ns
V
DD
=15 V,
V
GS
=10 V,
I
D
=30 A,
R
G
=1.6
Ω
t
d(off)
t
f
Turn-off delay time
Fall time
4.0
Gate Charge Characteristics
5)
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q
gs
–
–
–
–
–
–
7.5
3.8
3.5
7.1
15
–
–
–
–
–
–
nC
Q
g(th)
Q
gd
V
DD
=15 V,
I
D
=30 A,
V
GS
=0 to 4.5 V
Q
sw
Q
g
Gate charge total
V
plateau
Gate plateau voltage
3.1
V
V
DD
=15 V,
I
D
=30 A,
GS
=0 to 10 V
Q
g
Gate charge total
–
31
–
V
V
DS
=0.1 V,
GS
=0 to 4.5 V
Q
g(sync)
Gate charge total, sync. FET
Output charge
–
–
13
24
–
–
nC
V
Q
oss
V
DD
=15 V,
V
GS
=0 V
Reverse Diode
I
S
Diode continuous forward current
Diode pulse current
–
–
–
–
50
A
T
C
=25 °C
I
S,pulse
350
V
GS
=0 V,
I
F
=30 A,
T
j
=25 °C
V
SD
Diode forward voltage
–
–
0.88
–
1.1
20
V
V
R
=15 V,
I
F
=
I
S
,
d
i
F
/d
t
=400 A/µs
Q
rr
Reverse recovery charge
nC
6)
See figure 16 for gate charge parameter definition
Rev. 1.04
page 3
2010-01-18
IPP055N03L G
IPB055N03L G
1 Power dissipation
2 Drain current
P
tot
=f(
T
C
)
I
D
=f(
T
C
);
V
GS
≥
10 V
80
60
50
40
30
20
10
0
60
40
20
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
4 Max. transient thermal impedance
Z
thJC
=f(
t
p
)
parameter:
D
=
t
p
/
T
10
3
10
limited by on-state
resistance
1 µs
10 µs
10
2
0.5
100 µs
1
DC
0.2
0.1
10
1
1 ms
0.05
10 ms
0.1
0.02
0.01
10
0
single pulse
10
-1
0
0
0
0
0
0
1
0.01
10
-1
10
0
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
[V]
t
p
[s]
Rev. 1.04
page 4
2010-01-18
IPP055N03L G
IPB055N03L G
5 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=25 °C
6 Typ. drain-source on resistance
R
DS(on)
=f(
I
D
);
T
j
=25 °C
parameter:
V
GS
parameter:
V
GS
160
20
5 V
10 V
3 V
3.2 V
4.5 V
16
3.5 V
120
4 V
12
8
4 V
80
40
0
3.5 V
3.2 V
4.5 V
5 V
10 V
11.5 V
4
3 V
2.8 V
0
0
1
2
3
0
20
40
60
80
100
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
parameter:
T
j
8 Typ. forward transconductance
g
fs
=f(
I
D
);
T
j
=25 °C
160
120
80
160
120
80
40
0
40
175 °C
25 °C
0
0
1
2
3
4
5
0
20
40
60
80
100
V
GS
[V]
I
D
[A]
Rev. 1.04
page 5
2010-01-18
IPP055N03L G
IPB055N03L G
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
R
DS(on)
=f(
T
j
);
I
D
=30 A;
V
GS
=10 V
V
GS(th)
=f(
T
j
);
V
GS
=
V
DS
;
I
D
=250 µA
10
2.5
2
8
98 %
6
1.5
1
typ
4
2
0
0.5
0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
[°C]
T
j
[°C]
11 Typ. capacitances
12 Forward characteristics of reverse diode
I
F
=f(
V
SD
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
)
parameter:
T
j
10
4
10000
1000
25 °C
Ciss
25 °C, 98%
Coss
10
3
1000
100
175 °C, 98%
175 °C
10
2
100
10
Crss
10
1
10
1
0
5
10
15
V
DS
[V]
20
25
30
0.0
0.5
1.0
1.5
2.0
V
SD
[V]
Rev. 1.04
page 6
2010-01-18
IPP055N03L G
IPB055N03L G
13 Avalanche characteristics
AS
=f(
t
AV
);
R
GS
=25
Ω
14 Typ. gate charge
GS
=f(
Q
gate
);
I
D
=30 A pulsed
V
I
parameter:
T
j(start)
parameter:
V
DD
100
12
15 V
6 V
10
8
24 V
25 °C
100 °C
150 °C
10
6
4
2
1
10
-1
0
0
10
0
10
1
t
AV
[µs]
10
2
10
3
10
20
30
40
Q
gate
[nC]
15 Drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)
=f(
T
j
);
I
D
=1 mA
34
32
30
28
26
24
22
20
V
GS
Q
g
V
g
s
(th)
Q
g
(
t
h)
Q
sw
Q
g
d
Q
g
ate
Q
g
s
-60
-20
20
60
100
140
180
T
j
[°C]
Rev. 1.04
page 7
2010-01-18
IPP055N03L G
IPB055N03L G
Package Outline
PG-TO220-3-1
Rev. 1.04
page 8
2010-01-18
IPP055N03L G
IPB055N03L G
Package Outline
PG-TO263-3
Rev. 1.04
page 9
2010-01-18
IPP055N03L G
IPB055N03L G
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2006.
All Rights Reserved.
Attention please!
The information given in this data sheet shall in no event be regarded as a guarantee of conditions or
characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device, Infineon Technologies
hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types
in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or
system. Life support devices or systems are intended to be implanted in the human body, or to support and/or
maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the
user or other persons may be endangered.
Rev. 1.04
page 10
2010-01-18
