Infineon-Technologies-IPP60R022S7
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IPP60R022S7
MOSFET
PG-TOꢀ220
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7ꢀenablesꢀtheꢀbestꢀpriceꢀperformanceꢀforꢀlowꢀfrequency
switchingꢀapplications.ꢀCoolMOS™ꢀS7ꢀboastsꢀtheꢀlowestꢀRdsonꢀvaluesꢀfor
aꢀHVꢀSJꢀMOSFET,ꢀwithꢀdistinctiveꢀincreaseꢀofꢀenergyꢀefficiency.
tab
CoolMOS™ꢀS7ꢀisꢀoptimizedꢀforꢀ“staticꢀswitching”ꢀandꢀhighꢀcurrent
applications.ꢀItꢀisꢀanꢀidealꢀfitꢀforꢀsolidꢀstateꢀrelayꢀandꢀcircuitꢀbreakerꢀdesigns
asꢀwellꢀasꢀforꢀlineꢀrectificationꢀinꢀSMPSꢀandꢀinverterꢀtopologies.
Features
•ꢀCoolMOS™ꢀS7ꢀtechnologyꢀenablesꢀ22m
Ω
ꢀR
DS(on)
ꢀinꢀtheꢀsmallestꢀfootprint
•ꢀOptimizedꢀpriceꢀperformanceꢀinꢀlowꢀfrequencyꢀswitchingꢀapplications
•ꢀHighꢀpulseꢀcurrentꢀcapability
Drain
•ꢀTO220ꢀpackageꢀwithꢀtotalꢀPb-freeꢀdieꢀattach
Pin 2, Tab
*1
Benefits
Gate
Pin 1
•ꢀMinimizedꢀconductionꢀlossesꢀ(eliminateꢀ/ꢀreduceꢀheatꢀsink)
•ꢀIncreasedꢀsystemꢀperformance
•ꢀMoreꢀcompactꢀandꢀeasierꢀdesign
Source
Pin 3
*1: Internal body diode
•ꢀLowerꢀBOMꢀor/andꢀTCOꢀoverꢀprolongedꢀlifeꢀtime
Comparedꢀtoꢀelectromechanicalꢀdevices:
•ꢀFasterꢀswitchingꢀtimes
•ꢀMoreꢀreliabilityꢀandꢀlongerꢀsystemꢀlifeꢀtime
•ꢀShockꢀ&ꢀVibrationꢀresistance
•ꢀNoꢀcontactꢀarcing,ꢀbouncingꢀorꢀdegradationꢀoverꢀlifeꢀtime
Potentialꢀapplications
•ꢀSolidꢀstateꢀrelaysꢀandꢀcircuitꢀbreakers
•ꢀLineꢀrectificationꢀinꢀhighꢀpower/performanceꢀapplicationsꢀe.g.ꢀComputing,
Telecom,ꢀUPSꢀandꢀSolar
Productꢀvalidation
FullyꢀqualifiedꢀaccordingꢀtoꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
R
DS(on),max
Q
g,typ
Value
Unit
m
Ω
nC
V
22
150
0.83
375
V
SD
Pulsed I
SD
, I
DS
A
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPP60R022S7
PG-TO 220-3
60R022S7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2019-05-07
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2019-05-07
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
T
C
=140°C
Current is limited by T
j max
= 150°C;
Lower case temp does increase
Drain current rating
I
D
–
–
23
A
current capability
Pulsed drain current
1)
I
D,pulse
E
AS
I
AS
–
–
–
–
–
–
–
–
–
–
–
375
289
3.8
20
A
T
C
=25°C
Avalanche energy, single pulse
Avalanche current, single pulse
MOSFET dv/dt ruggedness
2)
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
–
mJ
A
I
D
=3.8A; V
DD
=50V; see table 10
–
–
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
–
V/ns
V
DS
=ꢀ0Vꢀtoꢀ300V
-20
-30
–
20
V
static
30
V
AC (f>1 Hz)
390
150
150
60
W
°C
°C
T
C
=25°C
Storage temperature
-55
-55
–
–
–
Operating junction temperature
Mounting torque
–
Ncm M3
and M3.5 screws
T
C
=140°C
Current is limited by T
j max
= 150°C;
Lower case temp does increase
Diode forward current rating
I
S
–
–
23
A
current capability
Diode pulse current
1)
Reverse diode dv/dt
3)
I
S,pulse
–
–
–
–
375
5
A
T
C
=25°C
V
DS
=0ꢀtoꢀ300V,ꢀ
I
SD
<=23A,ꢀ
T
j
=25°Cꢀꢀꢀ
dv/dt
V/ns
see table 8
V
DS
=0ꢀtoꢀ300V,ꢀ
I
SD
<=23A,ꢀ
T
j
=25°Cꢀꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
di
f
/dt
–
–
–
–
820
n.a.
A/
µ
s
see table 8
V
ISO
V
V
rms
,ꢀ
T
C
=25°C,ꢀ
t
=1min
1)
Pulse width t
p
limited by T
j,max
2)
The dv/dt has to be limited by appropriate gate resistor
3)
Identical low side and high side switch
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2019-05-07
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.32
62
Thermal resistance, junction
– case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction
– ambient
R
thJA
°C/W leaded
Thermal resistance, junction
– ambient
for SMD version
R
thJA
–
–
–
–
–
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
T
sold
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2019-05-07
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3.5
Max.
–
Drain-source breakdown voltage
1)
Gate threshold voltage
V
(BR)DSS
V
(GS)th
V
V
V
GS
=0V,ꢀ
I
D
=1mA
4.0
4.5
V
DS
=
V
GS
,ꢀ
I
D
=1.44mA
–
–
–
50
5
–
V
DS
=600V,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=600V,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
nA
Ω
I
GSS
–
–
100
V
GS
=20V,ꢀ
V
DS
=0V
–
–
0.02
0.047
0.022
–
V
GS
=12V,ꢀ
I
D
=23A,ꢀ
T
j
=25°C
V
GS
=12V,ꢀ
I
D
=23A,ꢀ
T
j
=150°C
R
DS(on)
R
G
–
0.80
–
Ω
f
=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
5639
89
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=300V,ꢀ
f
=250kHz
V
GS
=0V,ꢀ
V
DS
=300V,ꢀ
f
=250kHz
C
oss
Effective output capacitance, energy
related
2)
C
o(er)
–
303
–
pF
V
GS
=0V,ꢀ
V
DS
=0ꢀtoꢀ300V
Effective output capacitance, time
related
3)
C
o(tr)
Q
oss
t
d(on)
–
–
–
2678
803
30
–
–
–
pF
nC
ns
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0ꢀtoꢀ300V
V
GS
=0V,ꢀ
V
DS
=0ꢀtoꢀ300V
Output charge
V
DD
=300V,ꢀ
V
GS
=13V,ꢀ
I
D
=23A,
R
G
=5.3
Ω
;ꢀseeꢀtableꢀ9
Turn-on delay time
V
DD
=300V,ꢀ
V
GS
=13V,ꢀ
I
D
=23A,
R
G
=5.3
Ω
;ꢀseeꢀtableꢀ9
Rise time
t
r
–
–
–
9
–
–
–
ns
ns
ns
V
DD
=300V,ꢀ
V
GS
=13V,ꢀ
I
D
=23A,
R
G
=5.3
Ω
;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
t
d(off)
t
f
150
9
V
DD
=300V,ꢀ
V
GS
=13V,ꢀ
I
D
=23A,
R
G
=5.3
Ω
;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
31
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=300V,ꢀ
I
D
=23A,ꢀ
V
GS
=0ꢀtoꢀ12V
V
DD
=300V,ꢀ
I
D
=23A,ꢀ
V
GS
=0ꢀtoꢀ12V
V
DD
=300V,ꢀ
I
D
=23A,ꢀ
V
GS
=0ꢀtoꢀ12V
V
DD
=300V,ꢀ
I
D
=23A,ꢀ
V
GS
=0ꢀtoꢀ12V
Q
gd
50
Q
g
150
5.4
Gate plateau voltage
V
plateau
1)
For applications with applied blocking voltage >70% of the specified blocking voltage, we recommend to use next
higher voltage class. For assessment please contact local Infineon sales office.
2)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ300V
3)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ300V
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2019-05-07
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
V
SD
t
rr
–
0.83
–
V
V
GS
=0V,ꢀ
I
F
=23A,ꢀ
T
j
=25°C
V
R
=300V,ꢀ
I
F
=23A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
–
–
–
460
9
–
–
–
ns
V
R
=300V,ꢀ
I
F
=23A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Reverse recovery charge
Q
rr
I
rrm
µC
A
V
R
=300V,ꢀ
I
F
=23A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Peak reverse recovery current
40
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2019-05-07
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
400
10
3
1 µs
10 µs
100 µs
350
300
250
200
150
100
50
1 ms
10
2
10 ms
DC
10
1
10
0
10
-1
10
-2
10
-3
0
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
0
1 µs
10 µs
100 µs
1 ms
10
2
10
1
10 ms
DC
0.5
10
0
10
-1
0.2
10
-1
10
-2
10
-3
0.1
0.05
0.01
0.02
single pulse
10
-2
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2019-05-07
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
600
350
8 V
300
250
10 V
500
10 V
12 V
20 V
12 V
400
8 V
20 V
200
300
200
100
0
150
100
50
0
0
4
8
12
16
20
0
4
8
12
16
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.060
2.3
2.0
1.7
1.4
1.1
0.8
0.5
0.055
20 V
0.050
12 V
8 V
10 V
0.045
0.040
0.035
0
50
100
150
200
250
300
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=23.0ꢀA;ꢀ
V
GS
=12ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2019-05-07
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
600
12
25 °C
500
400
300
200
100
0
10
8
300 V
120 V
6
150 °C
4
2
0
0
2
4
6
8
10
12
0
40
80
120
160
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=23.0ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
3
10
3
10
2
10
2
25 °C
125 °C
10
1
10
1
25 °C
125 °C
10
0
10
0
10
-1
10
-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V
SD
ꢀ[V]
V
SD
ꢀ[V]
I
F
=f(
V
SD
);ꢀ
V
GS
=0ꢀV;ꢀparameter:ꢀ
T
j
I
F
=f(
V
SD
);ꢀ
V
GS
=12ꢀV;ꢀparameter:ꢀ
T
j
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2019-05-07
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
Diagramꢀ13:ꢀAvalancheꢀenergy
Diagramꢀ14:ꢀDrain-sourceꢀbreakdownꢀvoltage
300
680
660
640
620
600
580
560
540
250
200
150
100
50
0
25
50
75
100
125
150
-50
-25
0
25
50
75
100
125
150
T
j
ꢀ[°C]
T
j
ꢀ[°C]
E
AS
=f(
T
j
);ꢀ
I
D
=3.8ꢀA;ꢀ
V
DD
=50ꢀV
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Diagramꢀ15:ꢀTyp.ꢀcapacitances
Diagramꢀ17:ꢀTyp.ꢀQossꢀoutputꢀcharge
10
5
900
800
700
600
500
400
300
200
100
0
10
4
Ciss
10
3
Coss
10
2
Crss
10
1
0
50
100
150
200
250
300
0
50
100
150
200
250
300
V
DS
ꢀ[V]
V
DS
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=250ꢀkHz
Q
oss
=
f
(V
DS
)
;ꢀ
V
GS
=0ꢀV
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2019-05-07
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
R
g
1
V
DS
R
g
2
I
F
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2019-05-07
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2019-05-07
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2019-05-07
600VꢀCoolMOSªꢀSJꢀS7ꢀPowerꢀDevice
IPP60R022S7
RevisionꢀHistory
IPP60R022S7
Revision:ꢀ2019-05-07,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2019-05-07
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Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2019-05-07
