Infineon-Technologies-IPP60R060C7
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MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
CoolMOS™ꢀC7
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPP60R060C7
DataꢀSheet
Rev.ꢀ2.0
Final
PowerꢀManagementꢀ&ꢀMultimarket
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPP60R060C7
TO-220
1ꢀꢀꢀꢀꢀDescription
CoolMOS™ꢀC7ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
tab
600VꢀCoolMOS™ꢀC7ꢀseriesꢀcombinesꢀtheꢀexperienceꢀofꢀtheꢀleadingꢀSJ
MOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.
Theꢀ600VꢀC7ꢀisꢀtheꢀfirstꢀtechnologyꢀeverꢀwithꢀR
DS(on)
*Aꢀbelowꢀ1Ohm*mm².
Features
•ꢀSuitableꢀforꢀhardꢀandꢀsoftꢀswitchingꢀ(PFCꢀandꢀhighꢀperformanceꢀLLC)
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggednessꢀtoꢀ120V/ns
•ꢀIncreasedꢀefficiencyꢀdueꢀtoꢀbestꢀinꢀclassꢀFOMꢀR
DS(on)
*E
oss
ꢀandꢀR
DS(on)
*Q
g
•ꢀBestꢀinꢀclassꢀR
DS(on)
ꢀ/package
Drain
Pin 2, Tab
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20
andꢀJESD22)
Gate
Pin 1
Source
Pin 3
Benefits
•ꢀIncreasedꢀeconomiesꢀofꢀscaleꢀbyꢀuseꢀinꢀPFCꢀandꢀPWMꢀtopologiesꢀinꢀthe
application
•ꢀHigherꢀdv/dtꢀlimitꢀenablesꢀfasterꢀswitchingꢀleadingꢀtoꢀhigherꢀefficiency
•ꢀEnablingꢀhigherꢀsystemꢀefficiencyꢀbyꢀlowerꢀswitchingꢀlosses
•ꢀIncreasedꢀpowerꢀdensityꢀsolutionsꢀdueꢀtoꢀsmallerꢀpackages
•ꢀSuitableꢀforꢀapplicationsꢀsuchꢀasꢀserver,ꢀtelecomꢀandꢀsolar
•ꢀHigherꢀswitchingꢀfrequenciesꢀpossibleꢀwithoutꢀlossꢀinꢀefficiencyꢀdueꢀto
lowꢀEossꢀandꢀQg
Applications
PFCꢀstagesꢀandꢀPWMꢀstagesꢀ(TTF,ꢀLLC)ꢀforꢀhighꢀpower/performance
SMPSꢀe.g.ꢀComputing,ꢀServer,ꢀTelecom,ꢀUPSꢀandꢀSolar.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g.typ
Value
650
60
Unit
V
m
Ω
nC
A
68
I
D,pulse
135
I
D,continuous
@ T
j
<150°C 54
A
E
oss
@400V
8.1
µJ
Body diode di/dt
420
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPP60R060C7
PG-TO 220
60C7060
see Appendix A
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2015-11-30
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPP60R060C7
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2015-11-30
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPP60R060C7
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
–
–
–
–
35
22
T
C
=25°C
A
Continuous drain current
1)
I
D
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
E
AS
E
AR
I
AS
–
–
–
–
–
–
–
–
–
–
–
–
–
–
135
159
0.80
6.4
120
20
A
T
C
=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
–
mJ
mJ
A
I
D
=6.4A; V
DD
=50V; see table 10
–
I
D
=6.4A; V
DD
=50V; see table 10
–
–
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
–
V/ns
V
DS
=0…400V
-20
-30
–
V
static;
30
V
AC (f>1 Hz)
162
150
150
60
W
°C
°C
T
C
=25°C
Storage temperature
-55
-55
–
–
–
Operating junction temperature
Mounting torque
–
Ncm M3
and M3.5 screws
Continuous diode forward current
Diode pulse current
2)
I
S
–
35
A
A
T
C
=25°C
T
C
=25°C
I
S,pulse
–
135
V
DS
=0…400V,ꢀ
I
SD
<=9.9A,ꢀ
T
j
=25°Cꢀꢀꢀꢀ
Reverse diode dv/dt
3)
dv/dt
–
–
20
V/ns
see table 8
V
DS
=0…400V,ꢀ
I
SD
<=9.9A,ꢀ
T
j
=25°Cꢀꢀꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
di
f
/dt
–
–
–
–
420
n.a.
A/
µ
s
see table 8
V
ISO
V
V
rms
,ꢀ
T
C
=25°C,ꢀ
t
=1min
1)
Limited by T
j max
.
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2015-11-30
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPP60R060C7
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
Thermal resistance, junction
– case
R
thJC
–
–
–
–
0.772 °C/W
–
Thermal resistance, junction
– ambient
R
thJA
62
–
°C/W leaded
°C/W n.a.
°C 1.6mm
(0.063 in.) from case for 10s
Thermal resistance, junction
– ambient
for SMD version
R
thJA
–
–
–
–
Soldering temperature, wavesoldering
only allowed at leads
T
sold
260
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2015-11-30
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPP60R060C7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3
Typ.
–
Max.
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
–
V
V
V
GS
=0V,ꢀ
I
D
=1mA
3.5
4
V
DS
=
V
GS
,ꢀ
I
D
=0.8mA
–
–
–
10
1
–
V
DS
=600,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=600,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
nA
Ω
I
GSS
–
–
100
V
GS
=20V,ꢀ
V
DS
=0V
–
–
0.052 0.060
0.115
V
GS
=10V,ꢀ
I
D
=15.9A,ꢀ
T
j
=25°C
V
GS
=10V,ꢀ
I
D
=15.9A,ꢀ
T
j
=150°C
R
DS(on)
R
G
–
–
0.8
–
Ω
f
=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
2850
54
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
C
oss
Effective output capacitance, energy
related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
101
1050
15.5
11
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…400V
Effective output capacitance, time
related
2)
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…400V
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=15.9A,
R
G
=3.3
Ω
;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=15.9A,
R
G
=3.3
Ω
;ꢀseeꢀtableꢀ9
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=15.9A,
R
G
=3.3
Ω
;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
t
d(off)
t
f
79
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=15.9A,
R
G
=3.3
Ω
;ꢀseeꢀtableꢀ9
4
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
14
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=400V,ꢀ
I
D
=15.9A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=15.9A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=15.9A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=15.9A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
23
Q
g
68
Gate plateau voltage
V
plateau
5.0
1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2015-11-30
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPP60R060C7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
Diode forward voltage
Reverse recovery time
V
SD
t
rr
–
0.9
–
V
V
GS
=0V,ꢀ
I
F
=15.9A,ꢀ
T
j
=25°C
V
R
=400V,ꢀ
I
F
=15.9A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
–
–
–
390
6
–
–
–
ns
V
R
=400V,ꢀ
I
F
=15.9A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Reverse recovery charge
Q
rr
I
rrm
µC
A
V
R
=400V,ꢀ
I
F
=15.9A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Peak reverse recovery current
32
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2015-11-30
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPP60R060C7
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
180
10
3
10 µs
160
140
120
100
80
100 µs
1 µs
10
2
10
1
1 ms
10 ms
DC
10
0
60
10
-1
10
-2
10
-3
40
20
0
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
0
10 µs
1 µs
100 µs
10
2
10
1
0.5
0.2
1 ms
10 ms
DC
0.1
10
0
10
-1
0.05
10
-1
10
-2
10
-3
0.02
0.01
single pulse
10
-2
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2015-11-30
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPP60R060C7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
200
120
20 V
20 V
10 V
8 V
10 V
8 V
180
160
140
120
100
80
100
80
60
40
20
0
7 V
7 V
6 V
5.5 V
6 V
60
5 V
5.5 V
40
4.5 V
5 V
20
4.5 V
0
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.25
0.14
5.5 V
6.5 V
6 V
0.24
0.23
0.22
0.21
0.20
0.19
0.18
0.17
0.16
0.15
0.14
0.13
0.12
0.11
0.10
7 V
0.13
0.12
0.11
0.10
10 V
20 V
0.09
98%
0.08
typ
0.07
0.06
0.05
0.04
0.03
0
20
40
60
80
100
120
140
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=15.9ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2015-11-30
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPP60R060C7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
200
12
120 V
25 °C
180
160
140
120
100
80
400 V
10
8
6
150 °C
4
60
40
2
20
0
0
0
2
4
6
8
10
12
0
10
20
30
40
50
60
70
80
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=15.9ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
10
2
160
140
120
100
80
125 °C
10
1
25 °C
60
10
0
40
20
10
-1
0
0.00 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 1.80
25
50
75
100
125
150
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
E
AS
=f(
T
j
);ꢀ
I
D
=6.4ꢀA;ꢀ
V
DD
=50ꢀV
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2015-11-30
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPP60R060C7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
700
10
5
680
660
640
620
600
580
560
540
520
10
4
Ciss
10
3
Coss
10
2
10
1
Crss
10
0
10
-1
-60
-30
0
30
60
90
120
150
0
100
200
300
400
T
j
ꢀ[°C]
V
DS
ꢀ[V]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
9
8
7
6
5
4
3
2
1
0
0
100
200
300
400
V
DS
ꢀ[V]
E
oss
=
f
(V
DS
)
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2015-11-30
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPP60R060C7
6ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
V
DS
R
g
1
V
D
S
(
p
ea
k
)
V
DS
t
rr
V
DS
I
F
t
F
t
S
d
I
F
/ dt
R
g
2
I
F
t
1
0
%
I
rrm
Q
F
Q
S
I
F
dI /
dt
rr
t
rr
=
t
F
+t
S
rr
I
rrm
Q
=
Q
F
+
Q
S
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2015-11-30
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPP60R060C7
7ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2015-11-30
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPP60R060C7
8ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2015-11-30
600VꢀCoolMOS™ꢀC7ꢀPowerꢀTransistor
IPP60R060C7
RevisionꢀHistory
IPP60R060C7
Revision:ꢀ2015-11-30,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2015-11-30
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
15
Rev.ꢀ2.0,ꢀꢀ2015-11-30
