Infineon-Technologies-IPP60R099P6
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MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
CoolMOS™ꢀP6
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPx60R099P6
DataꢀSheet
Rev.ꢀ2.1
Final
PowerꢀManagementꢀ&ꢀMultimarket
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6
TO-247
TO-220
TO-220ꢀFP
1ꢀꢀꢀꢀꢀDescription
tab
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀP6ꢀseriesꢀcombinesꢀthe
experienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.
TheꢀofferedꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFET
whileꢀnotꢀsacrificingꢀeaseꢀofꢀuse.ꢀExtremelyꢀlowꢀswitchingꢀandꢀconduction
lossesꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmoreꢀcompact,
lighterꢀandꢀcooler.
Drain
Pin 2, Tab
Features
Gate
Pin 1
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggedness
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss
•ꢀVeryꢀhighꢀcommutationꢀruggedness
Source
Pin 3
•ꢀEasyꢀtoꢀuse/drive
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20
andꢀJESD22)
Applications
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTV,ꢀLighting,ꢀServer,ꢀTelecom
andꢀUPS.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g.typ
Value
650
99
Unit
V
m
Ω
nC
A
70
I
D,pulse
109
8.8
E
oss
@400V
Body diode di/dt
µJ
300
A/µs
Typeꢀ/ꢀOrderingꢀCode
IPW60R099P6
Package
Marking
RelatedꢀLinks
PG-TO 247
PG-TO 220
IPP60R099P6
6R099P6
see Appendix A
IPA60R099P6
PG-TO 220 FullPAK
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2015-05-18
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2015-05-18
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
–
–
–
–
37.9
24.0
T
C
=25°C
T
C
=100°C
Continuous drain current
1)
I
D
A
Pulsed drain current
2)
I
D,pulse
E
AS
–
–
–
–
–
–
–
–
109
796
1.21
6.6
100
20
A
T
C
=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
–
mJ
mJ
A
I
D
=6.6A; V
DD
=50V; see table 10
E
AR
–
I
D
=6.6A; V
DD
=50V; see table 10
–
I
AR
–
dv/dt
V
GS
V
GS
–
V/ns
V
DS
=0…400V
-20
-30
V
V
static;
30
AC (f>1 Hz)
Power dissipation (Non FullPAK)
TO-220, TO-247
P
tot
P
tot
–
–
–
–
278
34
W
W
T
C
=25°C
T
C
=25°C
Power dissipation (FullPAK)
TO-220FP
Storage temperature
T
stg
T
j
-55
-55
–
–
150
150
°C
°C
–
–
Operating junction temperature
Mounting torque (Non FullPAK)
TO-220, TO-247
–
–
–
–
–
–
60
50
Ncm M3
and M3.5 screws
Ncm M2.5
screws
Mounting torque (FullPAK)
TO-220FP
Continuous diode forward current
Diode pulse current
2)
I
S
–
–
–
–
32.9
109
A
A
T
C
=25°C
I
S,pulse
T
C
=25°C
V
DS
=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 8
Reverse diode dv/dt
3)
dv/dt
di
f
/dt
V
ISO
–
–
–
–
–
–
15
V/ns
A/
µ
s
V
V
DS
=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 8
Maximum diode commutation speed
300
2500
Insulation withstand voltage for
TO-220FP
V
rms
,ꢀ
T
C
=25°C,ꢀ
t
=1min
1)
Limited by T
j max
. Maximum duty cycle D=0.75
2)
Pulse width t
p
limited by T
j,max
3)
ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀ
R
G
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2015-05-18
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀ(NonꢀFullPAK)ꢀTO-220,ꢀTO-247
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.45
62
Thermal resistance, junction – case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction – ambient
R
thJA
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
T
sold
–
–
260
°C
1.6mm (0.063 in.) from case for 10s
Tableꢀ4ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀ(FullPAK)ꢀTO-220FP
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
3.65
80
Thermal resistance, junction – case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction – ambient
R
thJA
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
T
sold
–
–
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2015-05-18
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ5ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3.5
Typ.
–
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
V
V
V
GS
=0V,ꢀ
I
D
=1mA
4.0
4.5
V
DS
=
V
GS
,ꢀ
I
D
=1.21mA
–
–
–
10
5
–
V
DS
=600,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=600,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
nA
Ω
I
GSS
–
–
100
V
GS
=20V,ꢀ
V
DS
=0V
–
–
0.089 0.099
0.232
V
GS
=10V,ꢀ
I
D
=14.5A,ꢀ
T
j
=25°C
V
GS
=10V,ꢀ
I
D
=14.5A,ꢀ
T
j
=150°C
R
DS(on)
R
G
–
–
1
–
Ω
f
=1MHz,ꢀopenꢀdrain
Tableꢀ6ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
3330
140
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=100V,ꢀ
f
=1MHz
V
GS
=0V,ꢀ
V
DS
=100V,ꢀ
f
=1MHz
C
oss
Effective output capacitance, energy
related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
110
495
20
10
50
5
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…400V
Effective output capacitance, time
related
2)
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…400V
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=18.1A,
R
G
=1.7
Ω
;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=18.1A,
R
G
=1.7
Ω
;ꢀseeꢀtableꢀ9
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=18.1A,
R
G
=1.7
Ω
;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
t
d(off)
t
f
V
DD
=400V,ꢀ
V
GS
=13ꢀV,ꢀ
I
D
=18.1A,
R
G
=1.7
Ω
;ꢀseeꢀtableꢀ9
Tableꢀ7ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
20
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=400V,ꢀ
I
D
=18.1A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=18.1A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=18.1A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=18.1A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
24
Q
g
70
Gate plateau voltage
V
plateau
6.1
1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2015-05-18
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6
Tableꢀ8ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
Diode forward voltage
Reverse recovery time
V
SD
t
rr
–
0.9
–
V
V
GS
=0V,ꢀ
I
F
=18.1A,ꢀ
T
j
=25°C
V
R
=400V,ꢀ
I
F
=18.1A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
–
–
–
470
9
–
–
–
ns
V
R
=400V,ꢀ
I
F
=18.1A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Reverse recovery charge
Q
rr
I
rrm
µC
A
V
R
=400V,ꢀ
I
F
=18.1A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Peak reverse recovery current
37
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2015-05-18
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipationꢀ(NonꢀFullPAK)
Diagramꢀ2:ꢀPowerꢀdissipationꢀ(FullPAK)
300
40
35
30
25
20
15
10
5
250
200
150
100
50
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
P
tot
=f(
T
C
)
Diagramꢀ3:ꢀMax.ꢀtransientꢀthermalꢀimpedanceꢀ(NonꢀFullPAK) Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedanceꢀ(FullPAK)
10
1
10
1
0.5
10
0
10
0
0.2
0.1
0.5
0.05
0.2
0.1
0.02
0.01
10
-1
10
-1
0.05
0.02
0.01
single pulse
10
-4
10
-2
single pulse
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
-5
10
-3
10
-2
10
-1
10
0
10
1
t
p
ꢀ[s]
t
p
ꢀ[s]
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2015-05-18
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6
Diagramꢀ5:ꢀSafeꢀoperatingꢀareaꢀ(NonꢀFullPAK)
Diagramꢀ6:ꢀSafeꢀoperatingꢀareaꢀ(FullPAK)
10
3
10
3
1 µs
10
2
1 µs
10 µs
100 µs
10
2
10
1
10 µs
100 µs
10
1
1 ms
1 ms
10
0
10 ms
10 ms
10
0
10
-1
10
-2
10
-3
DC
10
-1
10
-2
DC
10
-3
10
-4
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ7:ꢀSafeꢀoperatingꢀareaꢀ(NonꢀFullPAK)
Diagramꢀ8:ꢀSafeꢀoperatingꢀareaꢀ(FullPAK)
10
2
10
2
1 µs
1 µs
10 µs
10 µs
100 µs
100 µs
10
1
10
1
10
0
1 ms
10 ms
1 ms
10 ms
10
0
10
-1
10
-2
10
-3
10
-4
DC
10
-1
10
-2
10
-3
DC
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2015-05-18
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6
Diagramꢀ9:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀoutputꢀcharacteristics
120
70
20 V
65
110
100
90
80
70
60
50
40
30
20
10
20 V
10 V
10 V
8 V
60
8 V
55
50
7 V
45
40
35
30
25
20
15
10
5
7 V
6 V
5.5 V
6 V
5 V
5.5 V
5 V
4.5 V
4.5 V
0
0
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ11:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ12:ꢀDrain-sourceꢀon-stateꢀresistance
0.55
0.30
0.50
0.45
0.40
0.25
0.20
5.5 V
6.5 V
7 V
6 V
0.35
0.30
0.25
0.20
0.15
10 V
0.15
20 V
typ
98%
0.10
0.05
0
5
10 15 20 25 30 35 40 45 50 55 60 65 70 75 80
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=14.5ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2015-05-18
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6
Diagramꢀ13:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
120
10
9
8
25 °C
100
80
60
40
20
0
120 V
480 V
7
6
5
4
3
2
1
0
150 °C
0
2
4
6
8
10
12
14
0
10
20
30
40
50
60
70
80
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=18.1ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ16:ꢀAvalancheꢀenergy
10
2
800
700
600
500
400
300
200
100
0
10
1
125 °C
25 °C
10
0
10
-1
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
150
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
E
AS
=f(
T
j
);ꢀ
I
D
=6.6ꢀA;ꢀ
V
DD
=50ꢀV
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2015-05-18
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6
Diagramꢀ17:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ18:ꢀTyp.ꢀcapacitances
700
10
4
Ciss
680
660
640
620
600
580
560
540
520
10
3
Coss
10
2
10
1
Crss
10
0
-75 -50 -25
0
25
50
75 100
125 150 175
0
100
200
300
400
500
T
j
ꢀ[°C]
V
DS
ꢀ[V]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
Diagramꢀ19:ꢀTyp.ꢀCossꢀstoredꢀenergy
10
9
8
7
6
5
4
3
2
1
0
0
100
200
300
400
500
V
DS
ꢀ[V]
E
oss
=
f
(V
DS
)
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2015-05-18
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6
6ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ9ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
R
g
1
V
D
S
(
p
ea
k
)
V
DS
V
DS
t
rr
V
DS
I
F
t
F
t
S
d
I
F
/ dt
R
g
2
I
F
t
1
0
%
I
rrm
Q
F
Q
S
I
F
dI /
dt
rr
t
rr
=
t
F
+t
S
rr
I
rrm
Q
=
Q
F
+
Q
S
R
g
1 = R
g
2
Tableꢀ10ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ11ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2015-05-18
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6
7ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
14
Rev.ꢀ2.1,ꢀꢀ2015-05-18
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
15
Rev.ꢀ2.1,ꢀꢀ2015-05-18
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6
MILLIMETERS
INCHES
DIM
MIN
4.50
2.34
2.42
0.65
0.95
0.95
0.65
0.65
0.40
MAX
4.90
2.85
2.86
0.90
1.38
1.51
1.38
1.51
0.63
16.15
9.83
10.65
MIN
MAX
0.193
0.112
0.113
0.035
0.054
0.059
0.054
0.059
0.025
0.636
0.387
0.419
DOCUMENT NO.
Z8B00003319
A
A1
A2
b
0.177
0.092
0.095
0.026
0.037
0.037
0.026
0.026
0.016
0.617
0.353
0.394
0
SCALE
b1
b2
b3
b4
c
2.5
0
2.5
5mm
D
15.67
8.97
EUROPEAN PROJECTION
D1
E
10.00
2.54 (BSC)
0.100 (BSC)
e
e1
N
5.08
3
0.200
3
H
28.70
12.78
2.83
29.75
13.75
3.45
1.130
0.503
0.111
0.116
0.124
1.171
0.541
0.136
0.133
0.138
ISSUE DATE
05-05-2014
L
L1
¡3
Q
REVISION
2.95
3.38
04
3.15
3.50
Figureꢀ3ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220ꢀFullPAK,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
16
Rev.ꢀ2.1,ꢀꢀ2015-05-18
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6
8ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ12ꢀꢀꢀꢀꢀRelatedꢀLinks
Final Data Sheet
17
Rev.ꢀ2.1,ꢀꢀ2015-05-18
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R099P6,ꢀIPP60R099P6,ꢀIPA60R099P6
RevisionꢀHistory
IPW60R099P6, IPP60R099P6, IPA60R099P6
Revision:ꢀ2015-05-18,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
Rdson max change from 105 to 99mOhm
2.0
2.1
2014-03-07
2015-05-18
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
18
Rev.ꢀ2.1,ꢀꢀ2015-05-18
