Infineon-Technologies-IPP60R199CPXKSA1
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IPP60R199CP
CoolMOS
®
Power Transistor
Features
Product Summary
V
DS
@ T
j,max
R
DS(on),max
650
0.199
3
2
V
• Lowest figure-of-merit R
ON
xQ
g
• Ultra low gate charge
Ω
Q
g,typ
nC
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
1)
for target applications
PG-TO220
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching topologies, for Server and Telecom
Type
Package
Ordering Code
Marking
IPP60R199CP
PG-TO220
SP000084278
6R199P
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I
D
T
C
=25 °C
T
C
=100 °C
T
C
=25 °C
16
10
Continuous drain current
A
Pulsed drain current
2)
51
I
D,pulse
E
AS
I
D
=6.6 A,
V
DD
=50 V
I
D
=6.6 A,
V
DD
=50 V
Avalanche energy, single pulse
436
mJ
A
2),3)
2),3)
E
AR
I
AR
0.66
6.6
Avalanche energy, repetitive
t
AR
Avalanche current, repetitive
t
AR
V
DS
=0…480 V
50
±20
MOSFET d
v
/d
t
ruggedness
d
v
/d
t
V/ns
V
V
GS
Gate source voltage
static
±30
AC (
f
>1 Hz)
T
C
=25 °C
P
tot
139
Power dissipation
W
T
j
,
T
stg
-55 … 150
60
Operating and storage temperature
Mounting torque
°C
M3 and M3.5 screws
page 1
Ncm
Rev. 2.
3
20
11
-1
2
-2
0
IPP60R199CP
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
9.9
Parameter
Symbol Conditions
Unit
I
S
Continuous diode forward current
Diode pulse current
2)
Reverse diode d
v
/d
t
4)
A
T
C
=25 °C
I
S,pulse
51
d
v
/d
t
15
V/ns
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R
thJC
Thermal resistance, junction – case
–
–
–
–
0.9
62
K/W
Thermal resistance, junction –
ambient
R
thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
1.6 mm (0.063 in.)
from case for 10 s
T
sold
–
–
260 °C
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS(th)
V
V
GS
=0 V,
I
D
=250 µA
DS
=
V
GS
,
I
D
=
0.66
mA
Drain-source breakdown voltage
Gate threshold voltage
600
2.5
–
–
V
3
3.5
V
DS
=600 V,
V
GS
=0 V,
I
DSS
Zero gate voltage drain current
–
–
–
1
–
µA
T
j
=25 °C
V
DS
=600 V,
V
GS
=0 V,
10
T
j
=150 °C
I
GSS
V
V
GS
=20 V,
V
DS
=0 V
GS
=10 V,
I
D
=9.9 A,
Gate-source leakage current
–
–
–
100 nA
R
DS(on)
Drain-source on-state resistance
0.18
0.199
Ω
T
j
=25 °C
V
GS
=10 V,
I
D
=9.9 A,
–
–
0.49
2
–
T
j
=150 °C
R
G
Gate resistance
f
=1 MHz, open drain
–
Ω
Rev. 2.
3
page 2
20
11
-1
2
-2
0
IPP60R199CP
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Dynamic characteristics
C
iss
Input capacitance
Output capacitance
–
–
1520
72
–
–
pF
ns
V
GS
=0 V,
V
DS
=100 V,
f
=1 MHz
C
oss
Effective output capacitance, energy
related
5)
C
o(er)
–
–
69
–
–
V
GS
=0 V,
V
DS
=0 V
to 480 V
Effective output capacitance, time
related
6)
C
o(tr)
180
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
10
5
–
–
–
–
V
V
DD
=400 V,
GS
=10 V,
I
D
=9.9 A,
Turn-off delay time
Fall time
50
5
R
G
=3.3
Ω
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
8
–
–
nC
Q
gd
11
32
5.0
V
V
DD
=400 V,
I
D
=9.9 A,
GS
=0 to 10 V
Q
g
43
–
V
plateau
Gate plateau voltage
V
V
Reverse Diode
V
GS
=0 V,
I
F
=9.9 A,
V
SD
Diode forward voltage
–
0.9
1.2
T
j
=25 °C
t
rr
Reverse recovery time
–
–
–
340
5.5
33
–
–
–
ns
µC
A
V
R
=400 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/µs
Q
rr
I
rrm
Reverse recovery charge
Peak reverse recovery current
1)
J-STD20 and JESD22
2)
Pulse width
t
p
limited by
T
j,max
3)
Repetitive avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f.
4)
I
SD
<=I
D
, di/dt<=200A/µs, V
DClink
=400V, V
peak
<V
(BR)DSS
, T
j
<T
jmax
, identical low side and high side switch.
5)
C
o(er)
is a fixed capacitance that gives the same stored energy a
s
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
6)
C
o(tr)
is a fixed capacitance that gives the same charging time a
s
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
Rev. 2.
3
page 3
20
11
-1
2
-2
0
IPP60R199CP
1 Power dissipation
2 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
P
tot
=f(
T
C
)
10
2
150
limited by on-state
resistance
1 µs
10 µs
100 µs
10
1
100
50
1 ms
DC
10 ms
10
0
10
-1
0
0
10
0
10
1
10
2
10
3
40
80
120
160
T
C
[°C]
V
DS
[V]
3 Max. transient thermal impedance
thJC
=f(
t
P
)
4 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=25 °C
Z
parameter:
D=t
p
/
T
parameter:
V
GS
10
0
75
60
45
30
15
0
0.5
20 V
8 V
10 V
0.2
0.1
7 V
10
-1
0.05
6 V
0.02
5.5 V
0.01
single pulse
5 V
4.5 V
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0
5
10
15
20
t
p
[s]
V
DS
[V]
Rev. 2.
3
page 4
20
11
-1
2
-2
0
IPP60R199CP
5 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=150 °C
parameter:
V
GS
6 Typ. drain-source on-state resistance
DS(on)
=f(
I
D
);
T
j
=150 °C
R
parameter:
V
GS
35
30
25
20
15
10
5
1.2
6.5 V
6 V
20 V
10 V
5.5 V
5 V
1
0.8
0.6
0.4
0.2
7 V
6 V
8 V
10 V
5.5 V
7 V
5 V
4.5 V
0
0
0
0
5
10
15
20
10
20
30
40
I
D
[A]
V
DS
[V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
parameter:
T
j
R
DS(on)
=f(
T
j
);
I
D
=9.9 A;
V
GS
=10 V
0.6
0.5
0.4
80
60
40
20
0
C °25
0.3
98 %
C °150
typ
0.2
0.1
0
-60
-20
20
60
100
140
180
0
2
4
6
8
10
T
j
[°C]
V
GS
[V]
Rev. 2.
3
page 5
20
11
-1
2
-2
0
IPP60R199CP
9 Typ. gate charge
GS
=f(
Q
gate
);
I
D
=9.9 A pulsed
10 Forward characteristics of reverse diode
I
F
=f(
V
SD
V
)
parameter:
V
DD
parameter:
T
j
10
2
10
9
8
7
6
5
4
3
2
1
25 °C, 98%
120 V
150 °C, 98%
25 °C
10
1
400 V
150 °C
10
0
10
-1
0
0
0
0.5
1
1.5
2
10
20
gate
[nC]
30
40
Q
V
SD
[V]
11 Avalanche energy
12 Drain-source breakdown voltage
E
AS
=f(
T
j
);
I
D
=6.6 A;
V
DD
=50 V
V
BR(DSS)
=f(
T
j
);
I
D
=0.25 mA
500
700
400
300
200
100
0
660
620
580
540
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
[°C]
T
j
[°C]
Rev. 2.
3
page 6
20
11
-1
2
-2
0
IPP60R199CP
13 Typ. capacitances
14 Typ. Coss stored energy
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
E
oss
=
f
(V
DS
)
10
5
10
4
12
Ciss
8
4
10
3
10
2
Coss
10
1
Crss
10
0
0
0
0
100
200
300
DS
[V]
400
500
100
200
300
400
500
600
V
DS
[V]
V
Rev. 2.
3
page 7
20
11
-1
2
-2
0
IPP60R199CP
Definition of diode switching characteristics
Rev. 2.
3
page 8
20
11
-1
2
-2
0
IPP60R199CP
PG-TO220-3-1/TO220-3-21: Outlines
Rev. 2.
3
page 9
20
11
-1
2
-2
0
IPP60R199CP
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Rev. 2.
3
page 10
20
11
-1
2
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0
