Infineon-Technologies-IPP65R150CFD
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MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ CFD2 650V
650V CoolMOS™ CFD2 Power Transistor
IPx65R150CFD
Data Sheet
Rev. 2.0
Final
Industrial & Multimarket
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
TO-247
D²PAK
TO-220
1
Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series
combines the experience of the leading SJ MOSFET supplier with high
class innovation. The resulting devices provide all benefits of a fast
switching SJ MOSFET while offering an extremely fast and robust body
diode. This combination of extremely low switching, commutation and
conduction losses together with highest robustness make especially
resonant switching applications more reliable, more efficient, lighter and
cooler.
TO-220 FP
I²PAK
drain
pin 2
Features
• Ultra-fast body diode
gate
pin 1
• Very high commutation ruggedness
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Easy to use/drive
• Qualified for industrial grade applications according to JEDEC
(J-STD20 and JESD22)
source
pin 3
• Pb-free plating, Halogen free for mold compound
Applications
650V CoolMOS™ CFD2 is especially suitable for resonant switching PWM
stages for e.g. PC Silverbox, LCD TV, Lighting, Server,Telecom and Solar.
Table 1
Key Performance Parameters
Parameter
V‡» @ TÎ ÑÈà
RDS(on),max
Qg,typ
Value
700
0.15
86
Unit
V
Â
nC
A
ID,pulse
72
Eoss @ 400V
Body diode di/dt
Qrr
6.8
µJ
A/µs
µC
ns
A
900
0.7
trr
140
8.8
Irrm
Type / Ordering Code
IPW65R150CFD
IPB65R150CFD
IPP65R150CFD
IPA65R150CFD
IPI65R150CFD
Package
Marking
65F6150
Related Links
PG-TO 247
PG-TO 263
PG-TO 220
see Appendix A
PG-TO 220 FullPAK
PG-TO 262
Final Data Sheet
Rev. 2.0,
2011-11-16
2
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
Table of Contents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
19
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20
Final Data Sheet
Rev. 2.0,
2011-11-16
3
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
2
Maximum ratings
at
T
Î = 25°C, unless otherwise specified
Table 2
Maximum ratings
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Continuous drain current
1)
I
‡
22.4
14.2
72
A
A
T
† = 25°C
T
† = 100°C
T
† = 25°C
Pulsed drain current
2)
I
‡‚ÔÛÐÙþ
E
ƒ»
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
614
mJ
I
‡ = 4.5A,
V
‡‡ = 50V
E
ƒ¸
0.93 mJ
I
‡ = 4.5A,
V
‡‡ = 50V
I
ƒ¸
dv/dt
V
•»
4.5
50
20
30
A
V/ns
V
‡» = 0 … 400V
-20
-30
V
static
AC (f > 1 Hz)
Power dissipation (non FullPAK)
TO-247, TO-220, I²PAK
P
ÚÓÚ
195.3 W
T
† = 25°C
T
† = 25°C
Power dissipation (FullPAK)
TO-220 FP
P
ÚÓÚ
34.7
150
60
W
Operating and storage temperature
T
΂
T
ÙÚÃ
-55
°C
Mounting torque (non FullPAK)
TO-247, TO-220, I²PAK
Ncm M3
and M3.5 screws
Ncm M2.5
screws
Mounting torque (FullPAK)
TO-220 FP
50
Continuous diode forward current
Diode pulse current
I
»
22.4
72
A
T
† = 25°C
T
† = 25°C
I
»‚ÔÛÐÙþ
dv/dt
diË/dt
A
Reverse diode dv/dt
3)
50
V/ns
A/µs
V
‡» = 0 … 400V,
I
»‡ ù
I
‡,
T
Î = 25°C
Maximum diode commutation speed
900
1)
Limited by TÎ ÑÈà. Maximum
2)
Pulse width tÔ limited by TÎ ÑÈà
3)
VÔþÈÏ<Vñ…¸ò‡»», TÎ<TÎ ÑÈà, identical low side and high side switch with same Rg
Final Data Sheet
Rev. 2.0,
2011-11-16
4
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
3
Thermal characteristics
Table 3
Thermal characteristics TO-247, TO-220, I²PAK
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Thermal resistance, junction – case
Thermal resistance, junction – ambient
R
ÚÌœ†
R
ÚÌœƒ
0.64 °C/W
62
°C/W leaded
Soldering temperature, wavesoldering only
allowed at leads
1.6 mm (0.063 in.) from case for
10s
T
ÙÓÐÁ
260
°C
Table 4
Thermal characteristics TO-220 FP
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Thermal resistance, junction – case
Thermal resistance, junction – ambient
R
ÚÌœ†
R
ÚÌœƒ
3.6
80
°C/W
°C/W leaded
Soldering temperature, wavesoldering only
allowed at leads
1.6 mm (0.063 in.) from case for
10s
T
ÙÓÐÁ
260
°C
Table 5
Thermal characteristics D²PAK
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Thermal resistance, junction – case
R
ÚÌœ†
R
ÚÌœƒ
0.64 °C/W
SMD version, device on PCB,
minimal footprint
Thermal resistance, junction – ambient
1)
62
°C/W
°C
SMD version, device on PCB,
6cm² cooling area
35
Soldering temperature, wave- &
reflowsoldering allowed
T
ÙÓÐÁ
260
reflow MSL
1)
Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm² copper area (thickness 70µm) for drain connection.
PCB is vertical without air stream cooling.
Final Data Sheet
Rev. 2.0,
2011-11-16
5
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
4
Electrical characteristics
at
T
Î = 25°C, unless otherwise specified
Table 6
Static characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Drain-source breakdown voltage
Gate threshold voltage
V
ñ…¸ò‡»» 650
V
V
•» = 0V,
I
‡ = 1mA
V
•»ñÚÌò
I
‡»»
3.5
4
4.5
1
V
V
‡» =
V
•»,
I
‡ = 0.9mA
V
‡» = 650V,
V
•» = 0V,
T
Î = 25°C
Zero gate voltage drain current
µA
V
‡» = 650V,
V
•» = 0V,
T
Î = 150°C
300
Gate-source leakage current
I
•»»
100
nA
Â
V
•» = 20V,
V
‡» = 0V
Drain-source on-state resistance
R
‡»ñÓÒò
0.135 0.15
0.351
V
•» = 10V,
I
‡ = 9.3A,
T
Î = 25°C
V
•» = 10V,
I
‡ = 9.3A,
T
Î = 150°C
f
= 1MHz, open drain
Gate resistance
R
•
1.5
Â
Table 7
Dynamic characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Input capacitance
C
ÍÙÙ
2340
110
pF
pF
V
•» = 0V,
V
‡» = 100V,
f
= 1MHz
Output capacitance
C
ÓÙÙ
Effective output capacitance, energy
related
1)
C
ÓñþØò
90
pF
pF
V
•» = 0V,
V
‡» = 0 … 400V
I
‡ = constant,
V
•» = 0V,
V
‡» = 0 … 400V
Effective output capacitance, time related
2)
C
ÓñÚØò
420
Turn-on delay time
Rise time
t
ÁñÓÒò
t
Ø
12.4
7.6
ns
ns
ns
ns
V
‡‡ = 400V,
V
•» = 13V,
I
‡ = 14.0A,
R
• = 1.8Â
Turn-off delay time
Fall time
t
ÁñÓËËò
t
Ë
52.8
5.6
Table 8
Gate charge characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
ÃÙ
15
47
86
6.4
nC
nC
nC
V
V
‡‡ = 480V,
I
‡ = 14A,
V
•» = 0 to 10V
Q
ÃÁ
Q
Ã
Gate plateau voltage
V
ÔÐÈÚþÈÛ
1)
CÓñþØò is a fixed capacitance that gives the same stored energy as CÓÙÙ while V‡» is rising from 0 to 400V
2)
CÓñÚØò is a fixed capacitance that gives the same charging time as CÓÙÙ while V‡» is rising from 0 to 400V
Final Data Sheet
Rev. 2.0,
2011-11-16
6
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
Table 9
Reverse diode characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Diode forward voltage
V
»‡
t
ØØ
0.9
140
0.7
8.8
V
V
•» = 0V,
I
Π= 14.0A,
T
Î = 25°C
Reverse recovery time
ns
µC
A
V
¸ = 400V,
I
Π= 14.0A,
d
i
Œ/d
t
= 100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
ØØ
I
ØØÑ
Final Data Sheet
Rev. 2.0,
2011-11-16
7
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
5
Electrical characteristics diagrams
Table 10
Power dissipation
Power dissipation (FullPAK)
220
40
200
180
160
140
120
100
35
30
25
20
P
P
P
P
PP
PP
15
10
5
80
60
40
20
0
0
0
20
40
60
80
T
C
[°C]
100
120
140
160
0
20
40
60
80
T
C
[°C]
100
120
140
160
P
tot
=f(
T
C
)
P
tot
=f(
T
C
)
Table 11
Max. transient thermal impedance
Max. transient thermal impedance (FullPAK)
10
1
10
1
0.5
0.5
0.2
0.1
0.2
0.1
0.05
0.05
10
0
10
0
0.02
0.02
0.01
0.01
single pulse
single pulse
Z
Z
Z
Z
ZZ
ZZ
10
-1
10
-1
10
-2
10
-2
10
-5
10
-4
10
-3
t
p
[s]
10
-2
10
-1
10
-5
10
-4
10
-3
t
p
[s]
10
-2
10
-1
Z
thJC
=f(
t
P
); parameter:
D=t
p
/
T
Final Data Sheet
Z
thJC
=f(
t
P
); parameter:
D=t
p
/
T
Rev. 2.0,
2011-11-16
8
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
Table 12
Safe operating area
Safe operating area T†=25°C (FullPAK)
10
3
10
3
10
2
10
1
10
2
1 µs
1 µs
10 µs
10 µs
10
1
10
0
100 µs
1 ms
100 µs
1 ms
I
I
I
I
II
II
10
0
10
-1
10
-2
10 ms
DC
10 ms
DC
10
-1
10
-2
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
V
DS
[V]
V
DS
[V]
I
D
=f(
V
DS
);
T
C
=25 °C;
V
gs>7.5V;
D
=0; parameter:
t
p
I
D
=f(
V
DS
);
T
C
=25 °C;
V
gs>7.5V;
D
=0; parameter:
t
p
Table 13
Safe operating area
Safe operating area T†=80°C (FullPAK)
10
3
10
3
10
2
10
1
10
2
10
1
1 µs
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10 µs
100 µs
1 ms
I
I
I
I
II
II
10
0
10
-1
10
-2
10
0
10
-1
10
-2
10 ms
DC
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
V
DS
[V]
V
DS
[V]
I
D
=f(
V
DS
);
T
C
=80 °C;
V
gs>7.5V;
D
=0; parameter:
t
p
I
D
=f(
V
DS
);
T
C
=80 °C;
V
gs>7.5V;
D
=0; parameter:
t
p
Final Data Sheet
Rev. 2.0,
2011-11-16
9
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
Table 14
Typ. output characteristics
Typ. output characteristics
90
60
20 V
20 V
80
70
60
50
40
30
20
10
0
10 V
8 V
10 V
50
8 V
7 V
7 V
40
30
20
10
0
6 V
6 V
5.5 V
5 V
5.5 V
5 V
I
I
I
I
II
II
4.5 V
4.5 V
0
5
10
V
DS
[V]
15
20
0
5
10
V
DS
[V]
15
20
I
D
=f(
V
DS
);
T
j
=25 °C; parameter:
V
GS
I
D
=f(
V
DS
);
T
j
=125 °C; parameter:
V
GS
Table 15
Typ. drain-source on-state resistance
Drain-source on-state resistance
1.00
0.45
0.90
0.80
0.70
0.60
0.50
0.40
0.35
0.30
0.25
0.20
98%
typ
R
R
R
R
RR
RR
5 V
5.5 V
6 V
6.5 V
7 V
0.40
0.30
0.20
0.10
0.15
0.10
0.05
0.00
10 V
0
10
20
I
D
[A]
30
40
-60
-20
20
60
T
j
[°C]
100
140
180
R
DS(on)
=f(
I
D
);
T
j
=125 °C; parameter:
V
GS
R
DS(on)
=f(
T
j
);
I
D
=9.3 A;
V
GS
=10 V
Final Data Sheet
Rev. 2.0,
2011-11-16
10
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
Table 16
Typ. transfer characteristics
Typ. gate charge
80
10
25 °C
9
70
60
50
40
120 V
480 V
8
7
6
5
4
3
2
1
0
150 °C
I
I
I
I
V
V
V
V
30
20
10
0
0
2
4
6
8
10
0
25
50
Q
gate
[nC]
75
100
V
GS
[V]
I
D
=f(
V
GS
); |
V
DS
|=20V
V
GS
=f(
Q
gate
);
I
D
=14 A pulsed; parameter:
V
DD
Table 17
Avalanche energy
Drain-source breakdown voltage
700
760
740
720
700
680
660
640
600
500
400
E
E
E
E
300
200
100
0
V
V
V
V
620
600
580
560
540
0
50
100
T
j
[°C]
150
200
-60
-20
20
60
T
j
[°C]
100
140
180
E
AS
=f(
T
j
);
I
D
=4.5 A;
V
DD
=50 V
V
BR(DSS)
=f(
T
j
);
I
D
=10 mA
Final Data Sheet
Rev. 2.0,
2011-11-16
11
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
Table 18
Typ. capacitances
Typ. Coss stored energy
10
4
12
Ciss
10
8
10
3
10
2
6
Coss
Crss
C
C
C
C
E
E
E
E
4
2
0
10
1
10
0
0
100
200
300
V
DS
[V]
400
500
600
0
100
200
300
V
DS
[V]
400
500
600
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
E
oss
=
f
(V
DS
)
Table 19
Forward characteristics of reverse diode
10
3
10
2
10
1
I
I
I
I
125 °C
25 °C
10
0
10
-1
0
1
2
3
V
SD
[V]
I
F
=f(
V
SD
); parameter:
T
j
Final Data Sheet
Rev. 2.0,
2011-11-16
12
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
6
Test Circuits
Table 20
Diode characteristics
Test circuit for diode characteristics
Diode recovery waveform
I
D
R
G1
V
DS
R
G2
R
G1
=
R
G2
Table 21
Switching times
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Table 22
Unclamped inductive
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
V
D
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
Rev. 2.0,
2011-11-16
13
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
7
Package Outlines
Figure 1
Outline PG-TO 247, dimensions in mm/inches
Final Data Sheet
Rev. 2.0,
2011-11-16
14
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
Figure 2
Outline PG-TO 263, dimensions in mm/inches
Final Data Sheet
Rev. 2.0,
2011-11-16
15
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
Figure 3
Outline PG-TO 220, dimensions in mm/inches
Final Data Sheet
Rev. 2.0,
2011-11-16
16
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
Figure 4
Outline PG-TO 220 FullPAK, dimensions in mm/inches
Final Data Sheet
Rev. 2.0,
2011-11-16
17
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
Figure 5
Outline PG-TO 262, dimensions in mm/inches
Final Data Sheet
Rev. 2.0,
2011-11-16
18
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
8
Appendix A
Table 23
Related Links
IFX Design Tools:
•
IFX CoolMOS Webpage:
•
Final Data Sheet
Rev. 2.0,
2011-11-16
19
650V CoolMOS™ CFD2 Power Transistor
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD
IPA65R150CFD , IPI65R150CFD
Revision History
IPW65R150CFD , IPB65R150CFD , IPP65R150CFD , IPA65R150CFD , IPI65R150CFD
Revision: 2011-11-16, Rev. 2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final datasheet
2011-11-16
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Edition 2011-08-01
Published by
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© 2011 Infineon Technologies AG
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Final Data Sheet
Rev. 2.0,
2011-11-16
20
