Infineon-Technologies-IPP70N12S3-11
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IPB70N12S3-11
IPI70N12S3-11, IPP70N12S3-11
OptiMOS
®
-T Power-Transistor
Product Summary
V
DS
120
11.3
70
V
R
DS(on),max
(SMD version)
m
W
A
I
D
Features
• OptiMOS
TM
– power MOSFET for automotive applications
• N-channel – Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Type
Package
Marking
3N1211
3N1211
3N1211
IPB70N12S3-11
IPI70N12S3-11
IPP70N12S3-11
PG-TO263-3-2
PG-TO262-3-1
PG-TO220-3-1
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
I
D
T
C
=25 °C,
V
GS
=10 V
Continuous drain current
70
48
A
T
C
=100 °C,
V
GS
=10 V
2)
Pulsed drain current
1)
I
D,pulse
E
AS
T
C
=25 °C
280
410
70
Avalanche energy, single pulse
1)
Avalanche current, single pulse
Gate source voltage
I
D
=35A
mJ
A
I
AS
–
V
GS
–
±20
125
V
P
tot
T
C
=25 °C
Power dissipation
W
T
j
,
T
stg
Operating and storage temperature
–
-55 … +175
°C
Rev. 1.0
page 1
2016-06-20
IPB70N12S3-11
IPI70N12S3-11, IPP70N12S3-11
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics
1)
R
thJC
R
thJA
R
thJA
Thermal resistance, junction – case
–
–
–
–
–
–
1.2
62
K/W
Thermal resistance, junction –
ambient, leaded
SMD version, device on PCB
minimal footprint
–
–
–
–
62
40
6 cm
2
cooling area
2)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=0 V,
I
D
= 1 mA
V
GS(th)
V
DS
=
V
GS
,
I
D
=83µA
Drain-source breakdown voltage
Gate threshold voltage
120
2.0
–
–
V
3.0
4.0
V
DS
=120V,
V
GS
=0V,
T
j
=25°C
I
DSS
Zero gate voltage drain current
–
–
0.01
1
0.1
10
µA
V
DS
=120V,
V
GS
=0V,
T
j
=125°C
2)
I
GSS
V
GS
=20V,
V
DS
=0V
Gate-source leakage current
–
–
–
100 nA
R
DS(on)
V
GS
=10V,
I
D
=70A
Drain-source on-state resistance
9.7
11.6
11.3
m
W
V
GS
=10V,
I
D
=70A,
SMD version
–
9.4
Rev. 1.0
page 2
2016-06-20
IPB70N12S3-11
IPI70N12S3-11, IPP70N12S3-11
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics
1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
–
–
–
3350
940
105
17
4355 pF
1222
V
GS
=0V,
V
DS
=25V,
f
=1MHz
158
–
–
–
–
ns
8
V
DD
=20 V,
V
GS
=10 V,
I
D
=70 A,
R
G
=3.5
W
t
d(off)
t
f
Turn-off delay time
Fall time
25
8
Gate Charge Characteristics
1)
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
18
16
51
5.5
23
24
65
–
nC
Q
gd
V
DD
=96 V,
I
D
=70 A,
V
GS
=0 to 10 V
Q
g
V
plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current
1)
Diode pulse current
1)
I
S
–
–
–
–
70
T
C
=25°C
I
S,pulse
280
V
GS
=0 V,
I
F
=70 A,
T
j
=25 °C
V
SD
Diode forward voltage
0.6
1
1.2
V
V
R
=60V,
I
F
=50A,
d
i
F
/d
t
=100A/µs
Reverse recovery time
1)
Reverse recovery charge
1)
t
rr
–
–
100
265
–
–
ns
nC
Q
rr
1)
Defined by design. Not subject to production test.
2)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2016-06-20
IPB70N12S3-11
IPI70N12S3-11, IPP70N12S3-11
1 Power dissipation
2 Drain current
P
tot
= f(
T
C
);
V
GS
= 10 V
I
D
= f(
T
C
);
V
GS
= 10 V; SMD
150
125
100
75
80
60
40
20
0
50
25
0
0
50
100
150
200
0
50
100
150
200
T
C
[
°
C]
T
C
[
°
C]
3 Safe operating area
4 Max. transient thermal impedance
Z
thJC
= f(
t
p
)
I
D
= f(
V
DS
);
T
C
= 25 °C;
D
= 0; SMD
parameter:
t
p
parameter:
D
=
t
p
/
T
10
1
1000
1 µs
10
0
10 µs
0.5
100
100 µs
0.1
1 ms
10
-1
0.05
0.01
10
10
-2
single pulse
10
-3
1
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0.1
1
10
V
DS
[V]
100
1000
t
p
[s]
Rev. 1.0
page 4
2016-06-20
IPB70N12S3-11
IPI70N12S3-11, IPP70N12S3-11
5 Typ. output characteristics
I
D
= f(
V
DS
);
T
j
= 25 °C; SMD
parameter:
V
GS
6 Typ. drain-source on-state resistance
R
DS(on)
= f(
I
D
);
T
j
= 25 °C; SMD
parameter:
V
GS
400
360
320
280
240
200
160
120
80
20
10 V
18
5.5 V
6 V
16
7 V
14
12
10
8
6.5 V
6 V
6.5 V
7 V
5.5 V
5 V
10 V
40
0
0
1
2
3
4
5
0
20
40
60
80
100
120
V
DS
[V]
I
D
[A]
7 Typ. transfer characteristics
I
D
= f(
V
GS
);
V
DS
= 6V
parameter:
T
j
8 Typ. drain-source on-state resistance
R
DS(on)
= f(
T
j
);
I
D
= 70 A;
V
GS
= 10 V; SMD
250
200
150
100
50
21
19
17
15
13
11
9
-55 °C
25 °C
175 °C
7
0
5
3
4
5
6
7
-60
-20
20
60
100
140
180
V
GS
[V]
T
j
[
°
C]
Rev. 1.0
page 5
2016-06-20
IPB70N12S3-11
IPI70N12S3-11, IPP70N12S3-11
9 Typ. gate threshold voltage
V
GS(th)
= f(
T
j
);
V
GS
=
V
DS
parameter:
I
D
10 Typ. capacitances
C
= f(
V
DS
);
V
GS
= 0 V;
f
= 1 MHz
10
4
4
3.5
3
Ciss
Coss
10
3
10
2
10
1
400 µA
80 µA
2.5
Crss
2
1.5
1
0
5
10
15
20
25
30
-60
-20
20
60
100
140
180
V
DS
[V]
T
j
[
°
C]
11 Typical forward diode characteristics
12 Typ. avalanche characteristics
I
A S
= f(
t
AV
IF = f(V
SD
)
)
parameter:
T
j
parameter: T
j(start)
10
3
100
25 °C
10
2
100 °C
150 °C
10
175 °C
25 °C
10
1
10
0
1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0.1
1
10
t
AV
[µs]
100
1000
V
SD
[V]
Rev. 1.0
page 6
2016-06-20
IPB70N12S3-11
IPI70N12S3-11, IPP70N12S3-11
13 Typical avalanche energy
E
AS
= f(
T
j
)
14 Typ. drain-source breakdown voltage
V
BR(DSS)
= f(
T
j
);
I
D
= 1 mA
parameter:
I
D
135
1000
130
125
120
115
110
800
17.5 A
600
35 A
400
70 A
200
0
-55
-15
25
65
105
145
25
75
125
175
T
j
[
°
C]
T
j
[
°
C]
15 Typ. gate charge
16 Gate charge waveforms
V
GS
= f(
Q
gate
);
I
D
= 70 A pulsed
parameter:
V
DD
10
9
8
7
6
5
4
3
2
1
0
V
GS
24 V
Q
g
96 V
V
gs(th)
Q
g(th)
Q
sw
Q
gd
Q
gate
Q
gs
0
10
20
30
40
50
Q
gate
[nC]
Rev. 1.0
page 7
2016-06-20
IPB70N12S3-11
IPI70N12S3-11, IPP70N12S3-11
Published by
Infineon Technologies AG
81726 Munich, Germany
©
Infineon Technologies AG 2016
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of non
‑
infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 1.0
page 8
2016-06-20
IPB70N12S3-11
IPI70N12S3-11, IPP70N12S3-11
Revision History
Version
Date
Changes
Revision 1.0
20.06.2016 Final Data Sheet
Rev. 1.0
page 9
2016-06-20
