Infineon-Technologies-IPP80N06S2-07
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IPB80N06S2-07
IPP80N06S2-07, IPI80N06S2-07
Opti
MOS
®
Power-Transistor
Product Summary
V
DS
Features
55
6.3
80
V
• N-channel – Enhancement mode
R
DS(on),max
(SMD version)
m
Ω
A
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
•
Green package (lead free)
• Ultra low Rds(on)
I
D
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
• 100% Avalanche tested
Type
Package
Ordering Code
Marking
IPB80N06S2-07
IPP80N06S2-07
IPI80N06S2-07
PG-TO263-3-2
PG-TO220-3-1
PG-TO262-3-1
SP0002-18818
SP0002-18810
SP0002-18817
2N0607
2N0607
2N0607
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol
Conditions
Unit
Continuous drain current
1)
I
D
T
C
=25 °C,
V
GS
=10 V
T
C
=100 °C,
80
80
A
V
GS
=10 V
2)
Pulsed drain current
2)
Avalanche energy, single pulse
2)
Gate source voltage
4)
I
D,pulse
E
AS
T
C
=25 °C
I
D
= 80 A
320
530
mJ
V
V
GS
±20
P
tot
T
C
=25 °C
Power dissipation
250
W
°C
T
j
,
T
stg
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
-55 … +175
55/175/56
Rev. 1.0
page 1
2006-03-13
IPB80N06S2-07
IPP80N06S2-07, IPI80N06S2-07
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Thermal characteristics
2)
R
thJC
R
thJA
R
thJA
Thermal resistance, junction – case
–
–
–
–
0.6
62
K/W
Thermal resistance, junction –
ambient, leaded
SMD version, device on PCB
minimal footprint
–
–
–
–
62
40
6 cm
2
cooling area
5)
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS(th)
V
V
GS
=0 V,
I
D
= 1 mA
Drain-source breakdown voltage
Gate threshold voltage
55
–
–
V
DS
=
V
GS
,
I
D
=180 µA
2.1
3.0
4.0
V
DS
=55 V,
V
GS
=0 V,
I
DSS
Zero gate voltage drain current
–
–
0.01
1
1
µA
T
j
=25 °C
V
DS
=55 V,
V
GS
=0 V,
100
T
j
=125 °C
2)
I
GSS
V
V
GS
=20 V,
V
DS
=0 V
GS
=10 V,
I
D
=68 A,
Gate-source leakage current
–
–
1
100 nA
R
DS(on)
Drain-source on-state resistance
5.6
6.6
m
Ω
V
GS
=10 V,
I
D
=68 A,
–
5.3
6.3
SMD version
Rev. 1.0
page 2
2006-03-13
IPB80N06S2-07
IPP80N06S2-07, IPI80N06S2-07
Values
typ.
Parameter
Symbol
Conditions
Unit
min.
max.
Dynamic characteristics
2)
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C
iss
C
oss
C
rss
t
d(on)
t
r
–
–
–
–
–
–
–
3400
880
215
16
–
–
–
–
–
–
–
pF
ns
V
GS
=0 V,
V
DS
=25 V,
f
=1 MHz
37
V
DD
=30 V,
V
GS
=10 V,
I
D
=80 A,
R
G
=3.3
Ω
t
d(off)
t
f
Turn-off delay time
Fall time
61
36
Gate Charge Characteristics
2)
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
18
35
86
4.9
24
53
110
–
nC
Q
gd
V
V
DD
=44 V,
I
D
=80 A,
GS
=0 to 10 V
Q
g
V
plateau
Gate plateau voltage
V
A
Reverse Diode
Diode continous forward current
2)
Diode pulse current
2)
I
S
–
–
–
–
80
T
C
=25 °C
I
S,pulse
320
V
GS
=0 V,
I
F
=80 A,
V
SD
Diode forward voltage
Reverse recovery time
2)
Reverse recovery charge
2)
–
–
–
0.9
55
96
1.3
70
V
T
j
=25 °C
V
R
=30 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/µs
t
rr
ns
Q
rr
120 nC
1)
Current is limited by bondwire; with an
R
thJC
= 0.6 K/W the chip is able to carry 135 A at 25°C. For detailed
2)
Defined by design. Not subject to production test.
3)
See diagram 13.
4)
Qualified at -20V and +20V.
5)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
Rev. 1.0
page 3
2006-03-13
IPB80N06S2-07
IPP80N06S2-07, IPI80N06S2-07
1 Power dissipation
2 Drain current
P
tot
= f(
T
C
);
V
GS
≥
6 V
I
D
= f(
T
C
);
V
GS
≥
10 V
300
250
200
150
100
50
100
80
60
40
20
0
0
0
50
100
150
200
0
50
100
150
200
T
C
[°C]
T
C
[°C]
3 Safe operating area
4 Max. transient thermal impedance
thJC
= f(
t
p
)
I
D
= f(
V
DS
);
T
C
= 25 °C;
D
= 0
parameter:
t
p
Z
parameter:
D
=
t
p
/
T
10
0
1000
100
10
0.5
1 µs
10 µs
100 µs
10
-1
0.1
1 ms
0.05
0.01
10
-2
single pulse
10
-3
1
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0.1
1
10
100
t
p
[s]
V
DS
[V]
Rev. 1.0
page 4
2006-03-13
IPB80N06S2-07
IPP80N06S2-07, IPI80N06S2-07
5 Typ. output characteristics
I
D
= f(
V
DS
);
T
j
= 25 °C
parameter:
V
GS
6 Typ. drain-source on-state resistance
DS(on)
= (
I
D
);
T
j
= 25 °C
R
parameter:
V
GS
300
14
10 V
7 V
5 V
5.5 V
12
10
8
250
200
150
100
50
6 V
6 V
8 V
6
10 V
5.5 V
4
5 V
2
4.5 V
0
0
0
2
4
6
8
10
0
20
40
60
80
100
120
I
D
[A]
V
DS
[V]
7 Typ. transfer characteristics
I
D
= f(
V
GS
);
V
DS
= 6V
parameter:
T
j
8 Typ. Forward transconductance
g
fs
= f(
I
D
);
T
j
= 25°C
parameter:
g
fs
200
180
160
140
120
100
80
200
175
150
125
100
75
60
50
175 °C
40
20
0
25
25 °C
-55 °C
0
2
3
4
5
6
0
50
100
150
200
I
D
[A]
V
GS
[V]
Rev. 1.0
page 5
2006-03-13
IPB80N06S2-07
IPP80N06S2-07, IPI80N06S2-07
9 Typ. Drain-source on-state resistance
DS(ON)
= f(
T
j
)
10 Typ. gate threshold voltage
GS(th)
= f(
T
j
);
V
GS
=
V
DS
R
V
parameter:
I
D
= 80 A; V
GS
= 10 V
parameter:
I
D
12
4
3.5
3
10
8
900 µA
180 µA
2.5
2
6
4
1.5
2
1
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
[°C]
T
j
[°C]
11 Typ. capacitances
12 Typical forward diode characteristicis
C
= f(
V
DS
);
V
GS
= 0 V;
f
= 1 MHz
IF = f(V
SD
)
parameter:
T
j
10
4
10
3
Ciss
10
2
Coss
10
3
25 °C
175 °C
10
1
Crss
10
2
10
0
0
5
10
15
20
25
30
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
DS
[V]
V
SD
[V]
Rev. 1.0
page 6
2006-03-13
IPB80N06S2-07
IPP80N06S2-07, IPI80N06S2-07
13 Typical avalanche energy
AS
= f(
T
j
)
14 Typ. gate charge
GS
= f(
Q
gate
);
I
D
= 80 A pulsed
E
V
parameter:
I
D
900
12
10
8
50 A
800
44 V
11 V
700
60 A
600
80 A
500
6
400
300
200
100
4
2
0
0
0
50
100
150
200
0
20
40
60
80
100
T
j
[°C]
Q
gate
[nC]
15 Typ. drain-source breakdown voltage
16 Gate charge waveforms
V
BR(DSS)
= f(
T
j
);
I
D
= 1 mA
66
64
62
60
58
56
54
52
50
48
46
V
GS
Q
g
Q
gate
Q
gd
Q
gs
-60
-20
20
60
100
140
180
T
j
[°C]
Rev. 1.0
page 7
2006-03-13
IPB80N06S2-07
IPP80N06S2-07, IPI80N06S2-07
Published by
Infineon Technologies AG
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 2004
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
a guarantee of characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies Office (www.infineon.com)
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies Office.
Infineon Technologies’ components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.0
page 8
2006-03-13
