Infineon-Technologies-IPS70R600P7S
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IPS70R600P7S
MOSFET
IPAKꢀSL
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
tab
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.
TheꢀlatestꢀCoolMOS™ꢀP7ꢀisꢀanꢀoptimizedꢀplatformꢀtailoredꢀtoꢀtargetꢀcost
sensitiveꢀapplicationsꢀinꢀconsumerꢀmarketsꢀsuchꢀasꢀcharger,ꢀadapter,
lighting,ꢀTV,ꢀetc.
TheꢀnewꢀseriesꢀprovidesꢀallꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSuperjunction
MOSFET,ꢀcombinedꢀwithꢀanꢀexcellentꢀprice/performanceꢀratioꢀandꢀstateꢀof
theꢀartꢀease-of-useꢀlevel.ꢀTheꢀtechnologyꢀmeetsꢀhighestꢀefficiency
standardsꢀandꢀsupportsꢀhighꢀpowerꢀdensity,ꢀenablingꢀcustomersꢀgoing
towardsꢀveryꢀslimꢀdesigns.
Drain
Pin 2, Tab
Features
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀR
DS(on)
*Q
g
ꢀandꢀR
DS(on)
*E
oss
•ꢀExcellentꢀthermalꢀbehavior
•ꢀIntegratedꢀESDꢀprotectionꢀdiode
Gate
Pin 1
•ꢀLowꢀswitchingꢀlossesꢀ(E
oss
•ꢀProductꢀvalidationꢀacc.ꢀJEDECꢀStandard
)
Source
Pin 3
Benefits
•ꢀCostꢀcompetitiveꢀtechnology
•ꢀLowerꢀtemperature
•ꢀHighꢀESDꢀruggedness
•ꢀEnablesꢀefficiencyꢀgainsꢀatꢀhigherꢀswitchingꢀfrequencies
•ꢀEnablesꢀhighꢀpowerꢀdensityꢀdesignsꢀandꢀsmallꢀformꢀfactors
Potentialꢀapplications
RecommendedꢀforꢀFlybackꢀtopologiesꢀforꢀexampleꢀusedꢀinꢀChargers,
Adapters,ꢀLightingꢀApplications,ꢀetc.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j=25°C
R
DS(on),max
Value
700
0.6
10.5
20.5
1.2
3
Unit
V
Ω
Q
g,typ
nC
A
I
D,pulse
E
oss
@ 400V
V
(GS)th,typ
µJ
V
ESD class (HBM)
2
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPS70R600P7S
PG-TO 251-3
70S600P7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R600P7S
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R600P7S
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
8.5
5.0
T
C
= 20°C
A
Continuous drain current
1)
Pulsed drain current
2)
I
D
T
C
= 100°C
I
D,pulse
I
AS
–
–
–
–
–
–
20.5
3.2
A
A
T
C
=25°C
Application (Flyback) relevant
avalanche current, single pulse
3)
measured with standard leakage
inductance of transformer of 7
µ
H
MOSFET dv/dt ruggedness
Gate source voltage
dv/dt
V
GS
100
V/ns
V
DS
ꢀ=0…400V
-16
-30
–
–
16
30
static;
V
AC (f>1 Hz)
Power dissipation
P
tot
–
–
–
–
–
–
–
–
43.1
150
5.9
20.5
1
W
°C
A
T
C
=25°C
–
Operating and storage temperature
Continuous diode forward current
Diode pulse current
2)
Reverse diode dv/dt
4)
Maximum diode commutation speed
4)
di
f
/dt
T
j
,ꢀ
T
stg
I
S
-40
–
–
–
–
–
T
C
=25°C
T
C
= 25°C
I
S,pulse
A
dv/dt
V/ns
V
DS
ꢀ=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°C
A/
µ
s
V
DS
ꢀ=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°C
50
Insulation withstand voltage
V
ISO
n.a.
V
V
rms
, T
C
=25°C, t=1min
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
2.9
Thermal resistance, junction
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction
– ambient
R
thJA
62
°C/W leaded
Thermal resistance, junction
– ambient
for SMD version
R
thJA
–
–
–
–
–
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
T
sold
260
°C
1.6 mm (0.063 in.) from case for 10s
1)
Limited by T
j max
. T
j
= 20°C. Maximum duty cycle D=0.5
2)
Pulse width t
p
limited by T
j,max
3)
Proven during verification test.
For explanation please read AN – CoolMOS
TM
700V P7.
4)
ꢀ
V
DClink
=400V;ꢀ
V
DS,peak
<
V
(BR)DSS
;ꢀidenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀ
R
G
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R600P7S
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
700
Typ.
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
–
V
V
V
GS
=0V,ꢀ
I
D
=1mA
2.50
3
3.50
V
DS
=
V
GS
,ꢀ
I
D
=0.09mA
–
–
–
10
1
–
V
DS
=700V,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=700V,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
I
DSS
µ
A
µ
A
Gate-source leakage current incl. Zener
diode
I
GSS
R
DS(on)
R
G
–
–
1
V
GS
=20V,ꢀ
V
DS
=0V
–
–
0.49
1.03
0.60
–
V
GS
=10V,ꢀ
I
D
=1.8A,ꢀ
T
j
=25°C
V
GS
=10V,ꢀ
I
D
=1.8A,ꢀ
T
j
=150°C
Drain-source on-state resistance
Gate resistance
Ω
Ω
–
10
–
f
=1ꢀMHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
364
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
C
oss
7
Effective output capacitance, energy
related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
17
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…400V
Effective output capacitance, time
related
2)
200
14
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…400V
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=1.4A,
R
G
=5.3
Ω
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=1.4A,
R
G
=5.3
Ω
5.5
63
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=1.4A,
R
G
=5.3
Ω
Turn-off delay time
Fall time
t
d(off)
t
f
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=1.4A,
R
G
=5.3
Ω
23
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
1.6
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=400V,ꢀ
I
D
=1.4A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=1.4A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=1.4A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=1.4A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
3.7
Q
g
10.5
4.4
Gate plateau voltage
V
plateau
1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R600P7S
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
V
SD
t
rr
–
–
–
–
–
–
–
–
V
V
GS
=0V,ꢀ
I
F
=2.5A,ꢀ
T
j
=25°C
Reverse recovery time
190
0.8
ns
µC
A
V
R
=400V,ꢀ
I
F
=1.4A,ꢀd
i
F
/d
t
=50A/µs
V
R
=400V,ꢀ
I
F
=1.4A,ꢀd
i
F
/d
t
=50A/µs
V
R
=400V,ꢀ
I
F
=1.4A,ꢀd
i
F
/d
t
=50A/µs
Reverse recovery charge
Peak reverse recovery current
Q
rr
I
rrm
9
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R600P7S
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
50
10
2
45
40
35
30
25
20
15
10
5
1 µs
10 µs
10
1
10
0
100 µs
1 ms
10 ms
10
-1
10
-2
10
-3
DC
0
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
2
10
1
1 µs
10
1
10
0
10 µs
100 µs
0.5
1 ms
10
0
0.2
10 ms
10
-1
10
-2
10
-3
0.1
0.05
0.02
DC
0.01
single pulse
10
-1
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R600P7S
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
25
18
20 V
10 V
8 V
20 V
10 V
8 V
16
14
12
10
8
7 V
20
7 V
6 V
6 V
15
10
5
5.5 V
5.5 V
5 V
6
5 V
4
4.5 V
4.5 V
2
0
0
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
3.0
2.00
6.5 V
7 V
1.80
1.60
1.40
1.20
2.5
6 V
2.0
5.5 V
5 V
10 V
1.5
1.0
0.5
0.0
1.00
98%
0.80
0.60
0.40
0.20
0.00
typ
0
5
10
15
20
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=1.8ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R600P7S
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
25
10
9
8
20
15
10
5
25 °C
120 V
7
400 V
6
5
4
3
2
1
0
150 °C
0
0
2
4
6
8
10
12
0
5
10
15
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=1.4ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
10
2
840
25 °C
125 °C
820
800
780
760
740
720
700
680
660
640
620
600
10
1
10
0
10
-1
0
1
2
3
-75 -50 -25
0
25
50
75 100
125 150 175
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R600P7S
Diagramꢀ14:ꢀTyp.ꢀcapacitances
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
10
4
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
3
Ciss
10
2
10
1
Coss
Crss
10
0
10
-1
0
100
200
300
400
500
0
100
200
300
400
500
600
700
V
DS
ꢀ[V]
V
DS
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=250ꢀkHz
E
oss
=
f
(V
DS
)
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R600P7S
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
R
g
1
V
DS
R
g
2
I
F
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R600P7S
6ꢀꢀꢀꢀꢀPackageꢀOutlines
DOCUMENT NO.
Z8B00181052
MILLIMETERS
DIM
INCHES
0
MIN
2.20
0.90
0.64
0.65
5.20
0.46
0.46
5.98
5.00
6.35
4.63
MAX
2.40
1.14
0.89
1.15
5.50
0.60
0.60
6.22
5.60
6.73
5.21
MIN
MAX
0.094
0.045
0.035
0.045
0.217
0.024
0.024
0.245
0.220
0.265
0.205
SCALE
A
A1
b
0.087
0.035
0.025
0.026
0.205
0.018
0.018
0.235
0.197
0.250
0.182
2.0
0
2.0
b2
b4
c
4mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29
4.57
3
0.090
0.180
3
e1
N
ISSUE DATE
06-04-2016
L
3.30
0.85
0.88
3.60
1.25
1.28
0.130
0.033
0.035
0.142
0.049
0.050
REVISION
L1
L2
01
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ251-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2018-02-13
700VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPS70R600P7S
RevisionꢀHistory
IPS70R600P7S
Revision:ꢀ2018-02-13,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
Corrected front page text
2016-10-11
2018-02-13
TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG
AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,
EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,
ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,
PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,
SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.
TrademarksꢀupdatedꢀAugustꢀ2015
OtherꢀTrademarks
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2018-02-13
