Infineon-Technologies-IPT007N06N
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MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
OptiMOS
TM
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPT007N06N
DataꢀSheet
Rev.ꢀ2.1
Final
PowerꢀManagementꢀ&ꢀMultimarket
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPT007N06N
HSOF
1ꢀꢀꢀꢀꢀDescription
Features
T
a
b
•ꢀ100%ꢀavalancheꢀtested
•ꢀSuperiorꢀthermalꢀresistance
•ꢀN-channel
•ꢀQualifiedꢀaccordingꢀtoꢀJEDEC
ꢀ1)
ꢀꢀforꢀtargetꢀapplications
•ꢀPb-freeꢀleadꢀꢀplating;ꢀRoHSꢀcompliant
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
1
2
3
4
5
6
7
8
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
Unit
Drain
Tab
V
DS
60
V
R
DS(on),max
I
D
0.75
300
227
216
m
Ω
A
Gate
Pin 1
Source
Pin 2-8
Q
oss
nC
nC
Q
G
(0V..10V)
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPT007N06N
PG-HSOF-8-1
007N06N
–
1)
J-STD20 and JESD22
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2014-02-20
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPT007N06N
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2014-02-20
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPT007N06N
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C
V
GS
=10ꢀV,ꢀ
T
C
=100ꢀ°C
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C,ꢀ
R
thJA
ꢀ=40ꢀK/W
1)
–
–
–
–
–
–
300
300
52
Continuous drain current
I
D
A
Pulsed drain current
2)
Avalanche energy, single pulse
3)
Gate source voltage
I
D,pulse
E
AS
–
–
–
–
–
1200
A
T
C
=25ꢀ°C
–
1100 mJ
I
D
=150ꢀA,ꢀ
R
GS
=25ꢀ
Ω
V
GS
P
tot
-20
–
20
V
–
Power dissipation
375
W
T
C
=25ꢀ°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
175
°C
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.4
62
Thermal resistance, junction – case
Device on PCB, minimal footprint
Device on PCB, 6 cm² cooling area
1)
R
thJC
R
thJA
R
thJA
–
–
–
0.2
K/W
K/W
K/W
–
–
–
–
–
40
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
2)
See figure 3 for more detailed information
3)
See figure 13 for more detailed information
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2014-02-20
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPT007N06N
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
60
Typ.
–
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
GS(th)
V
V
V
GS
=0ꢀV,ꢀ
I
D
=1ꢀmA
2.1
2.8
3.3
V
DS
=
V
GS
,ꢀ
I
D
=280ꢀµA
–
–
0.5
10
1
100
V
DS
=60ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=60ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
I
DSS
µA
nA
I
GSS
–
10
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
–
–
0.66
0.85
0.75
1
V
GS
=10ꢀV,ꢀ
I
D
=150ꢀA
V
GS
=6ꢀV,ꢀ
I
D
=75ꢀA
R
DS(on)
m
Ω
Gate resistance
R
G
g
fs
–
1.8
2.7
–
Ω
–
Transconductance
160
320
S
|
V
DS
|>2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=100ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
C
iss
C
oss
C
rss
–
–
–
16000 21280 pF
3400 4522 pF
V
GS
=0ꢀV,ꢀ
V
DS
=30ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=30ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=30ꢀV,ꢀ
f
=1ꢀMHz
Output capacitance
Reverse transfer capacitance
229
38
458
–
pF
ns
V
DD
=30ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
=1.8ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
V
DD
=30ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
=1.8ꢀ
Ω
18
76
22
–
–
–
ns
ns
ns
V
DD
=30ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
=1.8ꢀ
Ω
Turn-off delay time
Fall time
V
DD
=30ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
=1.8ꢀ
Ω
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
ꢀ1)
ꢀ
Values
Typ.
67
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
Switching charge
Q
gs
–
–
–
–
–
–
–
–
–
nC
nC
nC
nC
nC
V
V
DD
=30ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=30ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=30ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=30ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=30ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=30ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DS
=0.1ꢀV,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
Q
g(th)
Q
gd
47
–
39
–
Q
sw
58
–
Gate charge total
Q
g
216
4.2
287
Gate plateau voltage
Gate charge total, sync. FET
Output charge
V
plateau
Q
g(sync)
Q
oss
–
192
227
255
–
nC
–
V
DD
=30ꢀV,ꢀ
V
GS
=0ꢀV
1)
See
″
Gate charge waveforms
″
for parameter definition
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2014-02-20
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPT007N06N
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
–
Max.
300
1200
1
Diode continuous forward current
Diode pulse current
I
S
–
–
–
–
–
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
t
rr
–
A
T
C
=25ꢀ°C
Diode forward voltage
0.87
87
V
V
GS
=0ꢀV,ꢀ
I
F
=150ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=30ꢀV,ꢀ
I
F
=100A,ꢀd
i
F
/d
t
=100ꢀA/µs
V
R
=30ꢀV,ꢀ
I
F
=100A,ꢀd
i
F
/d
t
=100ꢀA/µs
Reverse recovery time
Reverse recovery charge
174
–
ns
nC
Q
rr
144
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2014-02-20
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPT007N06N
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
400
350
300
250
200
150
100
50
350
300
250
200
150
100
50
0
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
200
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
4
10
0
1 µs
10
3
10
2
10
1
10
0
10
-1
10 µs
0.5
10
-1
0.2
100 µs
0.1
0.05
0.02
1 ms
10 ms
DC
10
-2
0.01
single pulse
10
-3
10
-1
10
0
10
1
10
2
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2014-02-20
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPT007N06N
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
1200
3.0
6 V
10 V
7 V
1000
800
600
400
200
0
2.5
5 V
2.0
1.5
1.0
0.5
0.0
5.5 V
5.5 V
6 V
5 V
7 V
10 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
0
200
400
600
800
1000
1200
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀforwardꢀtransconductance
1200
450
400
350
300
250
200
150
100
50
1000
800
600
400
200
175 °C
25 °C
0
0
0
2
4
6
8
0
50
100
150
200
V
GS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
GS
);ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
g
fs
=f(
I
D
);ꢀ
T
j
=25ꢀ°C
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2014-02-20
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPT007N06N
Diagramꢀ9:ꢀDrain-sourceꢀon-stateꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
1.6
4
1.2
3
2
1
0
2800 µA
280 µA
max
0.8
typ
0.4
0.0
-60
-20
20
60
100
140
180
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
);ꢀ
I
D
=150ꢀA;ꢀ
V
GS
=10ꢀV
V
GS(th)
=f(
T
j
);ꢀ
V
GS
=
V
DS
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
5
10
4
25 °C
175 °C
25 °C, 98%
175 °C, 98%
Ciss
10
4
10
3
10
2
10
1
10
3
10
2
10
1
10
0
Coss
Crss
0
20
40
60
0.0
0.5
1.0
1.5
2.0
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2014-02-20
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPT007N06N
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
3
12
10
8
30 V
12 V
48 V
10
2
125 °C
25 °C
100 °C
6
10
1
4
2
10
0
0
10
0
10
1
10
2
10
3
0
50
100
150
200
250
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j(start)
V
GS
=f(
Q
gate
);ꢀ
I
D
=100ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Gate charge waveforms
68
66
64
62
60
58
56
54
52
-60
-20
20
60
100
140
180
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2014-02-20
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPT007N06N
6ꢀꢀꢀꢀꢀPackageꢀOutlines
1) partially covered with Mold Flash
MILLIMETERS
INCHES
DIM
MIN
2.20
0.70
9.70
0.42
0.40
MAX
2.40
0.90
9.90
0.50
0.60
10.58
MIN
MAX
0.094
0.035
0.390
0.020
0.024
0.416
DOCUMENT NO.
Z8B00169619
A
b
0.087
0.028
0.382
0.017
0.016
0.405
b1
b2
c
0
SCALE
D
10.28
2
D2
E
3.30
0.130
9.70
10.10
0.382
0.398
0
2
E1
E4
E5
e
7.50
8.50
0.295
0.335
4mm
9.46
1.20 (BSC)
0.372
0.047 (BSC)
EUROPEAN PROJECTION
H
11.48
6.55
11.88
6.75
0.452
0.258
0.468
0.266
H1
H2
H3
H4
N
7.15
3.59
3.26
8
0.281
0.141
0.128
8
ISSUE DATE
20-02-2014
K1
L
4.18
0.165
1.60
1.00
2.10
1.30
0.063
0.039
0.083
0.051
L1
L2
L4
0.70
0.60
0.028
0.024
REVISION
02
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-HSOF-8-1,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2014-02-20
OptiMOS
TM
ꢀPower-Transistor,ꢀ60ꢀV
IPT007N06N
RevisionꢀHistory
IPT007N06N
Revision:ꢀ2014-02-20,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
Update Diagram 12
2014-02-06
2014-02-20
WeꢀListenꢀtoꢀYourꢀComments
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Publishedꢀby
InfineonꢀTechnologiesꢀAG
81726ꢀMünchen,ꢀGermany
©ꢀ2014ꢀInfineonꢀTechnologiesꢀAG
AllꢀRightsꢀReserved.
LegalꢀDisclaimer
Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristics.ꢀWith
respectꢀtoꢀanyꢀexamplesꢀorꢀhintsꢀgivenꢀherein,ꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplication
ofꢀtheꢀdevice,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithout
limitation,ꢀwarrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2014-02-20
