Infineon-Technologies-IPU95R1K2P7
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IPU95R1K2P7
MOSFET
IPAK
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
Theꢀlatestꢀ950VꢀCoolMOS™ꢀP7ꢀseriesꢀsetsꢀaꢀnewꢀbenchmarkꢀinꢀ950V
superꢀjunctionꢀtechnologiesꢀandꢀcombinesꢀbest-in-classꢀperformanceꢀwith
stateꢀofꢀtheꢀartꢀease-of-use,ꢀresultingꢀfromꢀInfineon’sꢀoverꢀ18ꢀyears
pioneeringꢀsuperꢀjunctionꢀtechnologyꢀinnovation.
tab
Features
•ꢀBest-in-classꢀFOMꢀR
DS(on)
ꢀ*ꢀE
oss
;ꢀreducedꢀQ
g
,ꢀC
iss
,ꢀandꢀC
oss
•ꢀBest-in-classꢀIPAKꢀR
DS(on)
1
2
3
•ꢀBest-in-classꢀV
(GS)th
ꢀofꢀ3VꢀandꢀsmallestꢀꢀV
(GS)th
ꢀvariationꢀofꢀ±0.5V
•ꢀIntegratedꢀZenerꢀDiodeꢀESDꢀprotection
•ꢀBest-in-classꢀCoolMOS™ꢀqualityꢀandꢀreliability
•ꢀFullyꢀoptimizedꢀportfolio
Drain
Pin 2
Benefits
•ꢀBest-in-classꢀperformance
*1
Gate
Pin 1
*2
•ꢀEnablingꢀhigherꢀpowerꢀdensityꢀdesigns,ꢀBOMꢀsavingsꢀandꢀlower
assemblyꢀcosts
•ꢀEasyꢀtoꢀdriveꢀandꢀtoꢀparallel
Source
Pin 3
*1: Internal body diode
*2: Integrated ESD diode
•ꢀBetterꢀproductionꢀyieldꢀbyꢀreducingꢀESDꢀrelatedꢀfailures
•ꢀLessꢀproductionꢀissuesꢀandꢀreducedꢀfieldꢀreturns
•ꢀEasyꢀtoꢀselectꢀrightꢀpartsꢀforꢀfineꢀtuningꢀofꢀdesigns
Potentialꢀapplications
RecommendedꢀforꢀflybackꢀtopologiesꢀforꢀLEDꢀLighting,ꢀlowꢀpower
ChargersꢀandꢀAdapters,ꢀSmartꢀMeter,ꢀAUXꢀpowerꢀandꢀIndustrialꢀpower.
AlsoꢀsuitableꢀforꢀPFCꢀstageꢀinꢀConsumerꢀandꢀSolarꢀapplications.
ProductꢀValidation:
ꢀFullyꢀqualifiedꢀacc.ꢀJEDECꢀforꢀIndustrialꢀApplications
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseperateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j=25°C
R
DS(on),max
Q
g,typ
Value
950
1.2
15
Unit
V
Ω
nC
A
I
D
6
E
oss
@ 500V
V
GS(th),typ
1.3
3
µJ
V
ESD class (HBM)
2
–
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPU95R1K2P7
PG-TO 251-3
95R1K2P7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.0,ꢀꢀ2018-06-01
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R1K2P7
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2018-06-01
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R1K2P7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
6
3.7
T
C
=25°C
A
Continuous drain current
1)
I
D
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
E
AS
–
–
–
–
–
–
16
A
T
C
=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
11
mJ
mJ
I
D
=0.7A; V
DD
=50V; see table 10
I
D
=0.7A; V
DD
=50V; see table 10
E
AR
0.14
Application (Flyback) relevant
avalanche current, single pulse
3)
measured with standard leakage
inductance of transformer of 10µH
I
AS
–
3.0
–
A
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
–
–
–
–
–
–
–
–
–
–
100
20
V/ns
V
DS
=0…400V
-20
-30
–
V
static;
30
V
AC (f>1 Hz)
52
W
°C
°C
T
C
=25°C
Storage temperature
-55
-55
–
150
150
–
–
–
Operating junction temperature
Mounting torque
–
Ncm –
Continuous diode forward current
Diode pulse current
2)
I
S
–
4.1
16
A
A
T
C
=25°C
I
S,pulse
–
T
C
=25°C
V
DS
=0…400V,ꢀ
I
SD
<=1.4A,ꢀ
T
j
=25°Cꢀꢀꢀꢀ
Reverse diode dv/dt
4)
dv/dt
–
–
1
V/ns
see table 8
V
DS
=0…400V,ꢀ
I
SD
<=1.4A,ꢀ
T
j
=25°Cꢀꢀꢀꢀ
Maximum diode commutation speed
Insulation withstand voltage
di
F
/dt
–
–
–
–
50
A/
µ
s
see table 8
V
ISO
n.a.
V
V
rms
,ꢀ
T
C
=25°C,ꢀ
t
=1min
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.5
2)
Pulse width t
p
limited by T
j,max
3)
For further explanation please read AN – CoolMOS
TM
700V P7 & 950V P7
4)
Identical low side and high side switch with identical R
G
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2018-06-01
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R1K2P7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
2.4
Thermal resistance, junction
– case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction
– ambient
R
thJA
62
°C/W leaded
Thermal resistance, junction
– ambient
for SMD version
R
thJA
–
–
–
–
–
°C/W n.a.
Soldering temperature, wavesoldering
only allowed at leads
T
sold
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2018-06-01
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R1K2P7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
950
2.5
Typ.
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
–
V
V
V
GS
=0V,ꢀ
I
D
=1mA
3
3.5
V
DS
=
V
GS
,ꢀ
I
D
=0.14mA
–
–
–
10
1
–
V
DS
=950V,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=950V,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
I
GSS
–
–
1000 nA
V
GS
=20V,ꢀ
V
DS
=0V
–
–
1.03
2.29
1.2
Ω
–
V
GS
=10V,ꢀ
I
D
=2.7A,ꢀ
T
j
=25°C
V
GS
=10V,ꢀ
I
D
=2.7A,ꢀ
T
j
=150°C
R
DS(on)
R
G
–
1
–
Ω
f
=250kHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
478
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
C
oss
7
Effective output capacitance, energy
related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
12
120
7
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…400V
Effective output capacitance, time
related
2)
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…400V
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=2.7A,
R
G
=10.2
Ω
;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=2.7A,
R
G
=10.2
Ω
;ꢀseeꢀtableꢀ9
10
36
12
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=2.7A,
R
G
=10.2
Ω
;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
t
d(off)
t
f
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=2.7A,
R
G
=10.2
Ω
;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
2
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=760V,ꢀ
I
D
=2.7A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=760V,ꢀ
I
D
=2.7A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=760V,ꢀ
I
D
=2.7A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=760V,ꢀ
I
D
=2.7A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
5
Q
g
15
Gate plateau voltage
V
plateau
4.4
1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2018-06-01
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R1K2P7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
V
SD
t
rr
–
–
V
V
GS
=0V,ꢀ
I
F
=2.7A,ꢀ
T
j
=25°C
V
R
=400V,ꢀ
I
F
=1.4A,ꢀd
i
F
/d
t
=50A/µs;
see table 8
–
–
–
560
3
–
–
–
ns
V
R
=400V,ꢀ
I
F
=1.4A,ꢀd
i
F
/d
t
=50A/µs;
see table 8
Reverse recovery charge
Q
rr
I
rrm
µC
A
V
R
=400V,ꢀ
I
F
=1.4A,ꢀd
i
F
/d
t
=50A/µs;
see table 8
Peak reverse recovery current
8
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2018-06-01
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R1K2P7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
60
10
2
1 µs
50
40
30
20
10
0
10
1
10
0
10 µs
100 µs
10
-1
10
-2
10
-3
10
-4
1 ms
10 ms
DC
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
2
10
1
10
1
10
0
1 µs
0.5
10
0
10 µs
0.2
0.1
100 µs
10
-1
10
-2
10
-3
10
-4
0.05
0.02
0.01
1 ms
10
-1
single pulse
10 ms
DC
10
-2
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2018-06-01
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R1K2P7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
12
8
20 V
10 V
8 V
20 V
9
6
7 V
6 V
10 V
8 V
7 V
5.5 V
6 V
5.5 V
6
4
2
0
5 V
5 V
4.5 V
4.5 V
3
0
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
3.400
2.5
20 V
10 V
2.900
2.0
1.5
1.0
0.5
6 V
5.5 V
4.5 V
4 V
2.400
1.900
1.400
0
3
6
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=2.7ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2018-06-01
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R1K2P7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
12
12
10
8
25 °C
9
760 V
120 V
6
6
150 °C
4
2
0
3
0
0
2
4
6
8
10
12
0
5
10
15
20
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=2.7ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
10
2
12
9
6
3
0
10
1
25 °C
125 °C
10
0
10
-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
E
AS
=f(
T
j
);ꢀ
I
D
=0.7ꢀA;ꢀ
V
DD
=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2018-06-01
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R1K2P7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
1100
10
4
1050
1000
950
10
3
Ciss
10
2
10
1
Coss
900
10
0
Crss
850
10
-1
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
T
j
ꢀ[°C]
V
DS
ꢀ[V]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
5
4
3
2
1
0
0
200
400
600
800
1000
V
DS
ꢀ[V]
E
oss
=
f
(V
DS
)
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2018-06-01
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R1K2P7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
R
g
1
V
DS
R
g
2
I
F
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2018-06-01
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R1K2P7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
c
j
m
m
DOCUMENT NO.
Z8B0003330
MILLIMETERS
DIM
INCHES
0
MIN
2.16
0.90
0.64
0.65
4.95
0.46
0.46
5.97
5.04
6.35
4.70
MAX
2.41
1.14
0.89
1.15
5.50
0.60
0.89
6.22
5.77
6.73
5.21
MIN
MAX
SCALE
A
A1
b
0.085
0.035
0.025
0.026
0.195
0.018
0.018
0.235
0.198
0.250
0.185
0.095
0.045
0.035
0.045
0.217
0.024
0.035
0.245
0.227
0.265
0.205
2.0
0
2.0
b2
b4
c
4mm
c2
D
EUROPEAN PROJECTION
D1
E
E1
e
2.29
4.57
3
0.090
0.180
3
e1
N
ISSUE DATE
01-04-2016
L
8.89
1.90
0.89
9.65
2.29
1.37
0.350
0.075
0.035
0.380
0.090
0.054
REVISION
L1
L2
04
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ251-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2018-06-01
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R1K2P7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2018-06-01
950VꢀCoolMOSªꢀP7ꢀSJꢀPowerꢀDevice
IPU95R1K2P7
RevisionꢀHistory
IPU95R1K2P7
Revision:ꢀ2018-06-01,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
Subjects (major changes since last revision)
Release of final version
2.0
2018-06-01
Trademarks
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automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2018-06-01
