Infineon-Technologies-IPW60R045CPA
| Part # | Infineon-Technologies-IPW60R045CPA |
Download  | Infineon-Technologies-IPW60R045CPA |
IPW60R045CPA
CoolMOS
®
Power Transistor
Product Summary
V
DS
600
V
R
DS(on),max
Q
g,typ
0.045
Ω
150 nC
Features
• Worldwide best
R
ds,on
in TO247
• Ultra low gate charge
PG-TO247-3
• Extreme dv/dt rated
• High peak current capability
• Automotive AEC Q101 qualified
• Green package (RoHS compliant)
CoolMOS CPA is specially designed for:
• DC/DC converters for Automotive Applications
Type
Package
Marking
IPW60R045CPA
PG-TO247-3
6R045A
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
60
Parameter
Symbol Conditions
Unit
I
D
T
C
=25 °C
T
C
=100 °C
T
C
=25 °C
Continuous drain current
A
38
Pulsed drain current
1)
230
I
D,pulse
E
AS
E
AR
I
AR
I
D
=11 A,
V
DD
=50 V
I
D
=11 A,
V
DD
=50 V
Avalanche energy, single pulse
1950
3
mJ
1),2)
1),2)
Avalanche energy, repetitive
t
AR
11
A
Avalanche current, repetitive
t
AR
MOSFET d
v
/d
t
ruggedness
Gate source voltage
V
DS
=0…480 V
static
50
d
v
/d
t
V
GS
P
tot
V/ns
V
±20
T
C
=25 °C
431
Power dissipation
W
T
j
-40 … 150
-40 … 150
60
Operating temperature
Storage temperature
Mounting torque
°C
T
stg
M3 and M3.5 screws
page 1
Ncm
Rev. 2.0
2010-02-15
IPW60R045CPA
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I
S
44
230
15
Continuous diode forward current
Diode pulse current
1)
Reverse diode d
v
/d
t
3)
A
T
C
=25 °C
I
S,pulse
d
v
/d
t
V/ns
Values
typ.
Parameter
Symbol Conditions
Unit
min.
max.
Thermal characteristics
R
thJC
Thermal resistance, junction – case
–
–
–
–
0.29 K/W
62
Thermal resistance, junction –
ambient
R
thJA
leaded
Soldering temperature,
wavesoldering only allowed at leads
1.6 mm (0.063 in.)
from case for 10 s
T
sold
–
–
260 °C
Electrical characteristics,
at
T
j
=25 °C, unless otherwise specified
Static characteristics
V
(BR)DSS
V
GS
=0 V,
I
D
=250 µA
V
GS(th)
V
DS
=
V
GS
,
I
D
=3 mA
Drain-source breakdown voltage
Gate threshold voltage
600
2.5
–
–
V
3
3.5
V
DS
=600 V,
V
GS
=0 V,
T
j
=25 °C
I
DSS
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
–
–
–
–
–
10
µA
I
GSS
V
GS
=20 V,
V
DS
=0 V
100 nA
V
GS
=10 V,
I
D
=44 A,
T
j
=25 °C
R
DS(on)
0.04
0.045
Ω
Ω
V
GS
=10 V,
I
D
=44 A,
–
–
0.11
1.3
–
–
T
j
=150 °C
R
G
Gate resistance
f
=1 MHz, open drain
Rev. 2.0
page 2
2010-02-15
IPW60R045CPA
Values
Parameter
Symbol Conditions
Unit
min.
typ.
max.
Dynamic characteristics
C
iss
Input capacitance
Output capacitance
–
–
6800
320
–
–
pF
V
GS
=0 V,
V
DS
=100 V,
f
=1 MHz
C
oss
Effective output capacitance, energy
related
4)
C
o(er)
–
–
310
820
–
–
V
GS
=0 V,
V
DS
=0 V
to 480 V
Effective output capacitance, time
related
5)
C
o(tr)
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
–
–
–
–
30
20
–
–
–
–
ns
V
V
DD
=400 V,
GS
=10 V,
I
D
=44 A,
Turn-off delay time
Fall time
100
10
R
G
=3.3
Ω
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
gs
–
–
–
–
34
51
–
nC
Q
gd
–
190
–
V
DD
=400 V,
I
D
=44 A,
V
GS
=0 to 10 V
Q
g
150
5.0
V
plateau
V
V
Reverse Diode
V
GS
=0 V,
I
F
=44 A,
T
j
=25 °C
V
SD
Diode forward voltage
–
0.9
1.2
t
rr
Reverse recovery time
–
–
–
600
17
–
–
–
ns
µC
A
V
R
=400 V,
I
F
=
I
S
,
d
i
F
/d
t
=100 A/µs
Q
rr
I
rrm
Reverse recovery charge
Peak reverse recovery current
60
1)
Pulse width
t
p
limited by
T
j,max
2)
Repetitive avalanche causes additional power losses that can be calculated as
P
AV
=
E
AR
*
f.
3
)
I
SD
≤
I
D
, d
i
/d
t
≤
100A/µs,
V
DClink
= 400V,
V
peak
<
V
(BR)DSS
,
T
j
<
T
jmax
, identical low side and high side switch
4)
5)
C
C
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
o(er)
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS.
Rev. 2.0
page 3
2010-02-15
IPW60R045CPA
1 Power dissipation
2 Safe operating area
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0
parameter:
t
p
P
tot
=f(
T
C
)
10
3
500
400
300
200
100
0
limited by on-state
resistance
1
0
µs
10
2
10
1
10
0
100 µs
1 ms
DC
10 ms
10
0
10
1
10
2
10
3
0
40
80
120
160
V
DS
[V]
T
C
[°C]
3 Max. transient thermal impedance
Z
(thJC)
=f(t
p
)
4 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=25 °C
parameter:
D=t
p
/
T
parameter:
V
GS
10
0
250
200
150
100
50
10 V
8 V
20 V
7 V
0.5
10
-1
0.2
0.1
6 V
0.05
0.02
10
-2
5.5 V
0.01
single pulse
5 V
4.5 V
10
-3
0
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
0
5
10
V
DS
[V]
15
20
t
p
[s]
Rev. 2.0
page 4
2010-02-15
IPW60R045CPA
5 Typ. output characteristics
I
D
=f(
V
DS
);
T
j
=150 °C
parameter:
V
GS
6 Typ. drain-source on-state resistance
R
DS(on)
=f(
I
D
);
T
j
=150 °C
parameter:
V
GS
140
120
100
80
0.16
0.12
0.08
0.04
0
8 V
7 V
5.5 V
5 V
10 V
6 V
6.5 V
6 V
20 V
7 V
5.5 V
20 V
60
5 V
40
4.5 V
20
0
0
5
10
V
DS
[V]
15
20
0
20
40
60
80
100
I
D
[A]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
parameter:
T
j
R
DS(on)
=f(
T
j
);
I
D
=44 A;
V
GS
=10 V
0.12
0.1
320
280
240
200
160
120
80
25 °C
0.08
0.06
98 %
150 °C
typ
0.04
0.02
0
40
0
-60
-20
20
60
100
140
180
0
2
4
6
8
10
T
j
[°C]
V
GS
[V]
Rev. 2.0
page 5
2010-02-15
IPW60R045CPA
9 Typ. gate charge
V
GS
=f(
Q
gate
);
I
D
=44 A pulsed
parameter:
V
DD
10 Forward characteristics of reverse diode
I
F
=f(
V
SD
)
parameter:
T
j
10
3
10
120 V
400 V
8
10
2
150 °C, 98%
25 °C
150 °C
6
4
25 °C, 98%
10
1
2
10
0
0
0
0.5
1
1.5
2
0
50
100
150
Q
gate
[nC]
V
SD
[V]
11 Avalanche energy
12 Drain-source breakdown voltage
E
AS
=f(
T
j
);
I
D
=11 A;
V
DD
=50 V
V
BR(DSS)
=f(
T
j
);
I
D
=0.25 mA
2000
700
660
620
580
540
1500
1000
500
0
25
75
125
175
-60
-20
20
60
100
140
180
T
j
[°C]
T
j
[°C]
Rev. 2.0
page 6
2010-02-15
IPW60R045CPA
13 Typ. capacitances
14 Typ. Coss stored energy
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
E
oss
=
f
(V
DS
)
10
5
50
10
4
Ciss
40
30
20
10
10
3
Coss
10
2
10
1
Crss
10
0
0
0
0
100
200
300
400
500
100
200
300
400
500
600
V
DS
[V]
V
DS
[V]
Rev. 2.0
page 7
2010-02-15
IPW60R045CPA
Definition of diode switching characteristics
Rev. 2.0
page 8
2010-02-15
IPW60R045CPA
PG-TO-247-3: Outlines
Rev. 2.0
page 9
2010-02-15
IPW60R045CPA
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions
or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein,
any typical values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation warranties of no
n
‑
infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please
contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances. For information
on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the
express written approval of Infineon Technologies, if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be
implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be
endangered.
Rev. 2.0
page 10
2010-02-15
NOTIFICATION
N° 040/10
Information on N-Channel MOSFET products designed for automotive
applications
SalesName
Package
Products affected:
IPB60R099CPA
IPB60R199CPA
IPB60R299CPA
IPC60R075CPA
IPI60R099CPA
IPP60R099CPA
IPW60R045CPA
IPW60R075CPA
IPW60R099CPA
PG-TO263-3-2
PG-TO263-3-2
PG-TO263-3-2
Bare Die
PG-TO262-3-1
PG-TO220-3-1
PG-TO247-3-41
PG-TO247-3-41
PG-TO247-3-41
Dear Customer,
The devices listed for this notification are sensitive to hard commutation of the conducting body diode. This
operating condition can occur in half-bridge configurations used in ZVS phase shift and resonant switching PWM
converters. Using the device under such conditions may result in violation of the datasheet specification limits and
may lead to permanent damage of the device.
Please take care that in the context of the application described above the datasheet limits are not exceeded.
Best Regards
Michael Paulu
If you have any questions, please do not hesitate to contact your local Sales office.
2010-05-12
Page 1 of 1
