Infineon-Technologies-IPW60R099P7
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IPW60R099P7
MOSFET
PG-TOꢀ247-3
600VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
TheꢀCoolMOS™ꢀ7thꢀgenerationꢀplatformꢀisꢀaꢀrevolutionaryꢀtechnologyꢀfor
highꢀvoltageꢀpowerꢀMOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunction
(SJ)ꢀprincipleꢀandꢀpioneeredꢀbyꢀInfineonꢀTechnologies.ꢀTheꢀ600V
CoolMOS™ꢀP7ꢀseriesꢀisꢀtheꢀsuccessorꢀtoꢀtheꢀCoolMOS™ꢀP6ꢀseries.ꢀIt
combinesꢀtheꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFETꢀwithꢀexcellentꢀease
ofꢀuse,ꢀe.g.ꢀveryꢀlowꢀringingꢀtendency,ꢀoutstandingꢀrobustnessꢀofꢀbody
diodeꢀagainstꢀhardꢀcommutationꢀandꢀexcellentꢀESDꢀcapability.
Furthermore,ꢀextremelyꢀlowꢀswitchingꢀandꢀconductionꢀlossesꢀmake
switchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmoreꢀcompactꢀandꢀmuch
cooler.
Features
Drain
Pin 2, Tab
•ꢀSuitableꢀforꢀhardꢀandꢀsoftꢀswitchingꢀ(PFCꢀandꢀLLC)ꢀdueꢀtoꢀanꢀoutstanding
ꢀꢁcommutationꢀruggedness
•ꢀSignificantꢀreductionꢀofꢀswitchingꢀandꢀconductionꢀlosses
•ꢀExcellentꢀESDꢀrobustnessꢀ>2kVꢀ(HBM)ꢀforꢀallꢀproducts
•ꢀBetterꢀR
DS(on)
/packageꢀproductsꢀcomparedꢀtoꢀcompetitionꢀenabledꢀbyꢀa
ꢀꢁlowꢀR
DS(on)
*Aꢀ(belowꢀ1Ohm*mm²)
Gate
Pin 1
Source
Pin 3
•ꢀFullyꢀqualifiedꢀacc.ꢀJEDECꢀforꢀIndustrialꢀApplications
Benefits
•ꢀEaseꢀofꢀuseꢀandꢀfastꢀdesign-inꢀthroughꢀlowꢀringingꢀtendencyꢀandꢀusage
ꢀꢁacrossꢀPFCꢀandꢀPWMꢀstages
•ꢀSimplifiedꢀthermalꢀmanagementꢀdueꢀtoꢀlowꢀswitchingꢀandꢀconduction
ꢀꢁlosses
•ꢀIncreasedꢀpowerꢀdensityꢀsolutionsꢀenabledꢀbyꢀusingꢀproductsꢀwith
ꢀꢁsmallerꢀfootprintꢀandꢀhigherꢀmanufacturingꢀqualityꢀdueꢀtoꢀ>2ꢀkVꢀESD
ꢀꢁprotection
•ꢀSuitableꢀforꢀaꢀwideꢀvarietyꢀofꢀapplicationsꢀandꢀpowerꢀranges
Potentialꢀapplications
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages
forꢀe.g.ꢀꢀꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTV,ꢀLighting,ꢀServer,ꢀTelecom
andꢀUPS.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Value
650
99
Unit
V
m
Ω
nC
A
Q
g,typ
45
I
D,pulse
100
5.0
E
oss
@ 400V
Body diode di
F
/dt
µJ
900
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPW60R099P7
PG-TO 247-3
60R099P7
see Appendix A
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2018-05-15
600VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW60R099P7
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
7
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2018-05-15
600VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW60R099P7
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
–
–
–
–
31
20
T
C
=25°C
A
Continuous drain current
1)
I
D
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
E
AS
E
AR
I
AS
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
105
0.53
5.1
80
A
T
C
=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, single pulse
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
–
mJ
mJ
A
I
D
=5.1A; V
DD
=50V; see table 10
–
I
D
=5.1A; V
DD
=50V; see table 10
–
–
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
–
V/ns
V
DS
=0…400V
-20
-30
–
20
V
static;
30
V
AC (f>1 Hz)
117
150
150
60
W
°C
°C
T
C
=25°C
Storage temperature
-55
-55
–
–
–
Operating junction temperature
Mounting torque
–
Ncm M3
and M3.5 screws
Continuous diode forward current
Diode pulse current
2)
I
S
–
31
A
A
T
C
=25°C
T
C
=25°C
I
S,pulse
–
100
V
DS
=0…400V,ꢀ
I
SD
<=31A,ꢀ
T
j
=25°Cꢀꢀꢀꢀꢀ
see table 8
Reverse diode dv/dt
3)
dv/dt
–
–
50
V/ns
V
DS
=0…400V,ꢀ
I
SD
<=31A,ꢀ
T
j
=25°Cꢀꢀꢀꢀꢀ
see table 8
Maximum diode commutation speed
Insulation withstand voltage
di
F
/dt
–
–
–
–
900
n.a.
A/
µ
s
V
ISO
V
V
rms
,ꢀ
T
C
=25°C,ꢀ
t
=1min
1)
Limited by T
j,max
. Maximum Duty Cycle D = 0.50
2)
Pulse width t
p
limited by T
j,max
3)
Identical low side and high side switch with identical R
G
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2018-05-15
600VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW60R099P7
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
1.07
62
Thermal resistance, junction
– case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction
– ambient
R
thJA
°C/W leaded
Thermal resistance, junction
– ambient
for SMD version
R
thJA
–
–
–
–
–
°C/W –
Soldering temperature, wavesoldering
only allowed at leads
T
sold
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2018-05-15
600VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW60R099P7
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3
Max.
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
–
V
V
V
GS
=0V,ꢀ
I
D
=1mA
3.5
4
V
DS
=
V
GS
,ꢀ
I
D
=0.53mA
–
–
–
10
1
–
V
DS
=600V,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=600V,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
nA
Ω
I
GSS
–
–
100
V
GS
=20V,ꢀ
V
DS
=0V
–
–
0.077 0.099
0.180
V
GS
=10V,ꢀ
I
D
=10.5A,ꢀ
T
j
=25°C
V
GS
=10V,ꢀ
I
D
=10.5A,ꢀ
T
j
=150°C
R
DS(on)
R
G
–
–
5.9
–
Ω
f
=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
1952
33
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
V
GS
=0V,ꢀ
V
DS
=400V,ꢀ
f
=250kHz
C
oss
Effective output capacitance, energy
related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
62
649
23
15
89
5
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…400V
Effective output capacitance, time
related
2)
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…400V
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=10.5A,
R
G
=5.3
Ω
;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=10.5A,
R
G
=5.3
Ω
;ꢀseeꢀtableꢀ9
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=10.5A,
R
G
=5.3
Ω
;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
t
d(off)
t
f
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=10.5A,
R
G
=5.3
Ω
;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
11
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=400V,ꢀ
I
D
=10.5A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=10.5A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=10.5A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=10.5A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
13
Q
g
45
Gate plateau voltage
V
plateau
5.2
1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2018-05-15
600VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW60R099P7
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Typ.
0.9
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Diode forward voltage
Reverse recovery time
V
SD
t
rr
–
–
V
V
GS
=0V,ꢀ
I
F
=10.5A,ꢀ
T
j
=25°C
V
R
=400V,ꢀ
I
F
=4A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
–
–
–
211
2.1
–
–
–
ns
V
R
=400V,ꢀ
I
F
=4A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Reverse recovery charge
Q
rr
I
rrm
µC
A
V
R
=400V,ꢀ
I
F
=4A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Peak reverse recovery current
20.1
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2018-05-15
600VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW60R099P7
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
120
10
3
10
2
10
1
10
0
10
-1
100
80
60
40
20
0
1 µs
10 µs
100 µs
1 ms
10 ms
DC
10
-2
10
-3
10
-4
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
1
10
2
10
1
1 µs
10 µs
100 µs
10
0
0.5
10
0
1 ms
10 ms
0.2
0.1
10
-1
10
-2
10
-3
10
-4
DC
10
-1
0.05
0.02
0.01
single pulse
10
-2
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2018-05-15
600VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW60R099P7
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
140
100
20 V
10 V
120
100
80
60
40
20
0
80
60
40
20
0
20 V
8 V
7 V
10 V
8 V
7 V
6 V
5.5 V
6 V
5 V
5.5 V
5 V
4.5 V
4.5 V
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.400
3.000
5.5 V
0.370
2.500
2.000
1.500
1.000
0.500
0.000
6 V
0.340
0.310
0.280
0.250
0.220
0.190
0.160
6.5 V
7 V
10 V
20 V
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=10.5ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2018-05-15
600VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW60R099P7
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
125
12
25 °C
10
100
8
6
4
2
0
120 V
400 V
75
150 °C
50
25
0
0
2
4
6
8
10
12
0
10
20
30
40
50
60
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=10.5ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
10
3
120
100
80
60
40
20
0
10
2
10
1
125 °C
25 °C
10
0
10
-1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
25
50
75
100
125
150
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
E
AS
=f(
T
j
);ꢀ
I
D
=5.1ꢀA;ꢀ
V
DD
=50ꢀV
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2018-05-15
600VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW60R099P7
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
690
680
670
660
650
640
630
620
610
600
590
580
570
560
550
540
10
5
10
4
Ciss
10
3
Coss
10
2
10
1
Crss
10
0
-50
-25
0
25
50
75
100
125
150
0
100
200
300
400
500
T
j
ꢀ[°C]
V
DS
ꢀ[V]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=250ꢀkHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
7
6
5
4
3
2
1
0
0
100
200
300
400
500
V
DS
ꢀ[V]
E
oss
=
f
(V
DS
)
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2018-05-15
600VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW60R099P7
5ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
R
g
1
V
DS
R
g
2
I
F
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2018-05-15
600VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW60R099P7
6ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
12
Rev.ꢀ2.1,ꢀꢀ2018-05-15
600VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW60R099P7
7ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
Final Data Sheet
13
Rev.ꢀ2.1,ꢀꢀ2018-05-15
600VꢀCoolMOSªꢀP7ꢀPowerꢀTransistor
IPW60R099P7
RevisionꢀHistory
IPW60R099P7
Revision:ꢀ2018-05-15,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Release of final version
2017-05-18
2018-05-15
Updated diagram scalings; Nomenclature of product qualification grade was changed
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intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
14
Rev.ꢀ2.1,ꢀꢀ2018-05-15
