Infineon-Technologies-IPW60R125P6
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MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
CoolMOS™ꢀP6
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPx60R125P6
DataꢀSheet
Rev.ꢀ2.0
Final
PowerꢀManagementꢀ&ꢀMultimarket
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6
TO-247
TO-220
TO-220ꢀFP
1ꢀꢀꢀꢀꢀDescription
tab
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀP6ꢀseriesꢀcombinesꢀthe
experienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.
TheꢀofferedꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFET
whileꢀnotꢀsacrificingꢀeaseꢀofꢀuse.ꢀExtremelyꢀlowꢀswitchingꢀandꢀconduction
lossesꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmoreꢀcompact,
lighterꢀandꢀcooler.
Drain
Pin 2, Tab
Features
Gate
Pin 1
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggedness
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss
•ꢀVeryꢀhighꢀcommutationꢀruggedness
Source
Pin 3
•ꢀEasyꢀtoꢀuse/drive
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20
andꢀJESD22)
Applications
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages
forꢀe.g.ꢀPCꢀSilverbox,ꢀAdapter,ꢀLCDꢀ&ꢀPDPꢀTV,ꢀLighting,ꢀServer,ꢀTelecom
andꢀUPS.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g.typ
Value
650
125
56
Unit
V
m
Ω
nC
A
I
D,pulse
87
E
oss
@400V
Body diode di/dt
7.2
µJ
300
A/µs
Typeꢀ/ꢀOrderingꢀCode
IPW60R125P6
Package
Marking
RelatedꢀLinks
PG-TO 247
PG-TO 220
IPP60R125P6
6R125P6
see Appendix A
IPA60R125P6
PG-TO 220 FullPAK
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
17
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
18
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
–
–
–
–
30.0
19.0
T
C
=25°C
T
C
=100°C
Continuous drain current
1)
I
D
A
Pulsed drain current
2)
I
D,pulse
E
AS
–
–
–
–
–
–
–
–
87
A
T
C
=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
–
636
0.96
5.2
100
20
mJ
mJ
A
I
D
=5.2A; V
DD
=50V; see table 10
E
AR
–
I
D
=5.2A; V
DD
=50V; see table 10
–
I
AR
–
dv/dt
V
GS
V
GS
–
V/ns
V
DS
=0…400V
-20
-30
V
V
static;
30
AC (f>1 Hz)
Power dissipation (Non FullPAK)
TO-220, TO-247
P
tot
P
tot
–
–
–
–
219
34
W
W
T
C
=25°C
T
C
=25°C
Power dissipation (FullPAK)
TO-220FP
Storage temperature
T
stg
T
j
-55
-55
–
–
150
150
°C
°C
–
–
Operating junction temperature
Mounting torque (Non FullPAK)
TO-220, TO-247
–
–
–
–
–
–
60
50
Ncm M3
and M3.5 screws
Ncm M2.5
screws
Mounting torque (FullPAK)
TO-220FP
Continuous diode forward current
Diode pulse current
2)
I
S
–
–
–
–
26.0
87
A
A
T
C
=25°C
I
S,pulse
T
C
=25°C
V
DS
=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 8
Reverse diode dv/dt
3)
dv/dt
di
f
/dt
V
ISO
–
–
–
–
–
–
15
V/ns
A/
µ
s
V
V
DS
=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 8
Maximum diode commutation speed
300
2500
Insulation withstand voltage for
TO-220FP
V
rms
,ꢀ
T
C
=25°C,ꢀ
t
=1min
1)
Limited by T
j max
. Maximum duty cycle D=0.75
2)
Pulse width t
p
limited by T
j,max
ꢀ3)
ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀ
R
G
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀ(NonꢀFullPAK)ꢀTO-220,ꢀTO-247
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.57
62
Thermal resistance, junction – case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction – ambient
R
thJA
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
T
sold
–
–
260
°C
1.6mm (0.063 in.) from case for 10s
Tableꢀ4ꢀꢀꢀꢀꢀThermalꢀcharacteristicsꢀ(FullPAK)ꢀTO-220FP
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
3.65
80
Thermal resistance, junction – case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction – ambient
R
thJA
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
T
sold
–
–
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ5ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3.5
Typ.
–
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
V
V
V
GS
=0V,ꢀ
I
D
=1mA
4.0
4.5
V
DS
=
V
GS
,ꢀ
I
D
=0.96mA
–
–
–
10
2
–
V
DS
=600,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=600,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
nA
Ω
I
GSS
–
–
100
V
GS
=20V,ꢀ
V
DS
=0V
–
–
0.113 0.125
0.293
V
GS
=10V,ꢀ
I
D
=11.6A,ꢀ
T
j
=25°C
V
GS
=10V,ꢀ
I
D
=11.6A,ꢀ
T
j
=150°C
R
DS(on)
R
G
–
–
1.7
–
Ω
f
=1MHz,ꢀopenꢀdrain
Tableꢀ6ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
2660
110
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=100V,ꢀ
f
=1MHz
V
GS
=0V,ꢀ
V
DS
=100V,ꢀ
f
=1MHz
C
oss
Effective output capacitance,
energy related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
90
398
14
9
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…400V
Effective output capacitance,
time related
2)
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…400V
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=14.5A,
R
G
=1.7
Ω
;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=14.5A,
R
G
=1.7
Ω
;ꢀseeꢀtableꢀ9
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=14.5A,
R
G
=1.7
Ω
;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
t
d(off)
t
f
44
5
V
DD
=400V,ꢀ
V
GS
=13ꢀV,ꢀ
I
D
=14.5A,
R
G
=1.7
Ω
;ꢀseeꢀtableꢀ9
Tableꢀ7ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
16
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=400V,ꢀ
I
D
=14.5A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=14.5A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=14.5A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=14.5A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
20
Q
g
56
Gate plateau voltage
V
plateau
6.1
ꢀ1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
ꢀ2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6
Tableꢀ8ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
Diode forward voltage
Reverse recovery time
V
SD
t
rr
–
0.9
–
V
V
GS
=0V,ꢀ
I
F
=14.5A,ꢀ
T
j
=25°C
V
R
=400V,ꢀ
I
F
=14.5A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
–
–
–
385
7
–
–
–
ns
V
R
=400V,ꢀ
I
F
=14.5A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Reverse recovery charge
Q
rr
I
rrm
µC
A
V
R
=400V,ꢀ
I
F
=14.5A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Peak reverse recovery current
32
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipationꢀ(NonꢀFullPAK)
Diagramꢀ2:ꢀPowerꢀdissipationꢀ(FullPAK)
250
40
35
30
25
20
15
10
5
200
150
100
50
0
0
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
P
tot
=f(
T
C
)
Diagramꢀ3:ꢀMax.ꢀtransientꢀthermalꢀimpedanceꢀ(NonꢀFullPAK) Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedanceꢀ(FullPAK)
10
1
10
1
0.5
10
0
10
0
0.2
0.1
0.5
0.05
0.2
0.1
0.02
0.01
10
-1
10
-1
0.05
0.02
0.01
single pulse
single pulse
10
-4
10
-2
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
-5
10
-3
10
-2
10
-1
10
0
10
1
t
p
ꢀ[s]
t
p
ꢀ[s]
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6
Diagramꢀ5:ꢀSafeꢀoperatingꢀareaꢀ(NonꢀFullPAK)
Diagramꢀ6:ꢀSafeꢀoperatingꢀareaꢀ(FullPAK)
10
3
10
3
1 µs
10
2
1 µs
10 µs
100 µs
10
2
10
1
10 µs
100 µs
10
1
1 ms
1 ms
10 ms
10
0
10
-1
10
-2
10
-3
10
-4
10 ms
10
0
10
-1
10
-2
10
-3
DC
DC
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ7:ꢀSafeꢀoperatingꢀareaꢀ(NonꢀFullPAK)
Diagramꢀ8:ꢀSafeꢀoperatingꢀareaꢀ(FullPAK)
10
2
10
2
1 µs
1 µs
10 µs
100 µs
10 µs
100 µs
10
1
10
1
10
0
1 ms
10 ms
1 ms
10 ms
10
0
10
-1
10
-2
10
-3
10
-4
DC
10
-1
10
-2
10
-3
DC
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6
Diagramꢀ9:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀoutputꢀcharacteristics
90
55
20 V
20 V
10 V
8 V
10 V
50
45
40
35
30
25
20
15
10
5
80
70
60
50
40
30
20
10
8 V
7 V
7 V
6 V
5.5 V
6 V
5 V
5.5 V
5 V
4.5 V
4.5 V
0
0
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ11:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ12:ꢀDrain-sourceꢀon-stateꢀresistance
0.55
0.30
0.50
0.45
0.25
0.20
5.5 V
6.5 V
0.40
0.35
0.30
0.25
0.20
6 V
7 V
10 V
20 V
98%
typ
0.15
0.10
0.05
0
5
10
15
20
25
30
35
40
45
50
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=11.6ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6
Diagramꢀ13:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
100
10
90
80
70
60
50
40
30
20
10
0
9
8
25 °C
120 V
480 V
7
6
5
4
3
2
1
0
150 °C
0
2
4
6
8
10
12
14
0
10
20
30
40
50
60
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=14.5ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ16:ꢀAvalancheꢀenergy
10
2
700
600
500
400
300
200
100
0
10
1
125 °C
25 °C
10
0
10
-1
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
150
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
E
AS
=f(
T
j
);ꢀ
I
D
=5.2ꢀA;ꢀ
V
DD
=50ꢀV
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6
Diagramꢀ17:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ18:ꢀTyp.ꢀcapacitances
700
10
4
Ciss
680
660
640
620
600
580
560
540
520
10
3
Coss
10
2
10
1
Crss
10
0
-75 -50 -25
0
25
50
75 100
125 150 175
0
100
200
300
400
500
T
j
ꢀ[°C]
V
DS
ꢀ[V]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
Diagramꢀ19:ꢀTyp.ꢀCossꢀstoredꢀenergy
10
9
8
7
6
5
4
3
2
1
0
0
100
200
300
400
500
V
DS
ꢀ[V]
E
oss
=
f
(V
DS
)
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6
6ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ9ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
R
g
1
V
D
S
(
p
ea
k
)
V
DS
V
DS
t
rr
V
DS
I
F
t
F
t
S
d
I
F
/ dt
R
g
2
I
F
t
1
0
%
I
rrm
Q
F
Q
S
I
F
dI /
dt
rr
t
rr
=
t
F
+t
S
rr
I
rrm
Q
=
Q
F
+
Q
S
R
g
1 = R
g
2
Tableꢀ10ꢀꢀꢀꢀꢀSwitchingꢀtimes
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ11ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀload
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6
7ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6
Figureꢀ2ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
15
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6
Figureꢀ3ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ220ꢀFullPAK,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
16
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6
8ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ12ꢀꢀꢀꢀꢀRelatedꢀLinks
Final Data Sheet
17
Rev.ꢀ2.0,ꢀꢀ2014-03-07
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPW60R125P6,ꢀIPP60R125P6,ꢀIPA60R125P6
RevisionꢀHistory
IPW60R125P6, IPP60R125P6, IPA60R125P6
Revision:ꢀ2014-03-07,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2014-03-07
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
18
Rev.ꢀ2.0,ꢀꢀ2014-03-07
