Infineon-Technologies-IPW60R160C6

MOSFET  

MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor  

CoolMOS™ꢀC6ꢀ600V  

600VꢀCoolMOS™ꢀC6ꢀPowerꢀTransistor  

IPx60R160C6  

DataꢀSheet  

Rev.ꢀ2.

3

 

Final  

PowerꢀManagementꢀ&ꢀMultimarket  

600V CoolMOS

”

C6 Power Transistor  

IPA60R160C6, IPB60R160C6  

IPP60R160C6 IPW60R160C6  

1

Description  

CoolMOS

”

is a revolutionary technology for high voltage power  

MOSFE

T

s

, designed according to the superjunction (SJ) principle  

and pioneered by Infineon

T

e

chnologies. CoolMOS

”

C6 series  

combines the experience of the leading SJ MOSFET supplier with  

high class innovation. The offered devices provide all benefits of a  

fast switching SJ MOSFET while not sacrificing ease of use.  

Extremely low switching and conduction losses make switching  

applications even more efficient, more compact, lighter, and cooler.  

Features  

•

•

•

•

Extremely low losses due to very low FOM R

dson

*Q

g

and E

oss  

Very high commutation ruggedness  

drain  

pin 2  

Easy to use/drive  

JEDEC

1)

qualified, Pb-free plating, Halogen free  

gate  

pin 1  

Applications  

source  

pin 3  

PFC stages, hard switching PWM stages and resonant switching  

PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,  

Lighting, Server, Telecom and UPS.  

Please note: For MOSFET paralleling the use of ferrite beads on  

the gate or separate totem poles is generally recommended.  

Table 1  

Key Performance Parameters  

Parameter  

V

DS

@

T

j,max  

R

DS(on),max  

Q

g,typ  

Value  

650  

0.16  

75  

Unit  

V

!

nC  

A

I

D,pulse  

70  

E

oss

@ 400V  

Body diode d

i

/d

t  

6

µJ  

A/µs  

500  

Type / Ordering Code  

IPW60R160C6  

IPB60R160C6  

Package  

Marking  

Related Links  

PG-TO247  

PG-TO263  

PG-TO220  

IFX C6 Product Brief  

IFX C6 Portfolio  

6R160C6  

IPP60R160C6  

IFX CoolMOS Webpage  

IFX Design tools  

IPA60R160C6  

PG-TO220 FullPAK  

1) J-STD20

 

and JESD22  

Rev. 2.3  

Page 2  

2018-02-26  

600V CoolMOS

”

C6 Power Transistor  

IPx60R160C6  

Table of Contents  

Table of Contents  

1

Description

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

2  

Table of Contents

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

3  

Maximum ratings

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

4  

Thermal characteristics

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

5  

Electrical characteristics

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

6  

Electrical characteristics diagrams

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

8  

Test circuits

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

13  

Package outlines

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

14  

Revision History

 

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

 

18  

2

3

4

5

6

7

8

Rev. 2.3  

Page 3  

2018-02-26  

600V CoolMOS

”

C6 Power Transistor  

IPx60R160C6  

Maximum ratings  

2

Maximum ratings  

at

T

j

= 25 °C, unless otherwise specified.  

Table 2  

Maximum ratings  

Parameter  

Symbol  

Values  

Min. Typ.

 

Max.  

Unit Note

 

/ Test Condition  

Continuous drain current

1)  

I

D  

–

–

23.8  

15  

A

T

C

= 25 °C  

T

C

= 100°C  

T

C

=25 °C  

Pulsed drain current

2)  

I

D,pulse  

E

AS  

–

–

–

–

70  

A

Avalanche energy, single pulse  

497  

mJ  

I

D

=4.1 A,

V

DD

=50 V  

(see table 21)  

Avalanche energy, repetitive  

Avalanche current, repetitive  

MOSFET dv/dt ruggedness  

Gate source voltage  

E

AR  

I

AR  

–

–

–

–

–

0.75  

4.1  

50  

I

D

=4.1 A,

V

DD

=50 V  

–

A

dv/dt  

V

GS  

–

V/ns

V

DS

=0…480 V  

-20  

-30  

–

20  

V

static  

30  

AC (f>1 Hz)  

T

C

=25 °C  

Power dissipation for  

P

tot  

P

tot  

–

–

176  

W

TO-220, TO-247, TO-263  

Power dissipation for  

TO-220 FullPAK  

–

34  

Operating and storage temperature

 

T

j

,

T

stg  

-55  

–

–

–

150  

60  

°C  

Mounting torque  

TO-220, TO-247  

Ncm M3

 

and M3.5 screws  

Mounting torque  

TO-220 FullPAK  

50  

M2.5 screws  

Continuous diode forward current  

Diode pulse current

2)  

Reverse diode dv/dt

3)  

I

S  

–

–

–

–

–

–

20.6  

70  

A

A

T

C

=25 °C  

T

C

=25 °C  

I

S,pulse  

dv/dt  

15  

V/ns

V

DS

=0…400 V,

I

SD

”

I

D

,  

T

j

=25 °C  

Maximum diode commutation  

speed

3)  

di

f

/dt  

500  

A/µs  

1) Limited

 

by

T

j,max.

Maximum duty cycle D=0.75  

2) Pulse

 

width

t

p

limited by

T

j,max  

3) Identical

 

low side and high side switch with identical

R

G  

Final Data Sheet  

4

Rev. 2.1, 2010-02-09  

Rev. 2.3  

Page 4  

2018-02-26  

600V CoolMOS

”

C6 Power Transistor  

IPx60R160C6  

Thermal characteristics  

3

Thermal characteristics  

Table 3  

Thermal characteristics TO-220 (IPP60R160C6),TO-247 (IPW60R160C6)  

Parameter  

Symbol  

Values  

Typ.  

Unit  

Note /  

Test Condition  

Min.  

Max.  

0.71  

62  

Thermal resistance, junction – case

 

R

thJC  

–

–

–

–

°C/W  

Thermal resistance, junction –  

ambient  

R

thJA  

leaded  

Soldering temperature,  

wavesoldering only allowed at  

leads  

T

sold  

–

–

260  

°C  

1.6 mm (0.063 in.)  

from case for 10 s  

Table 4  

Thermal characteristics TO-220FullPAK (IPA60R160C6)  

Symbol Values  

Typ.  

Parameter  

Unit  

Note /  

Test Condition  

Min.  

Max.  

3.67  

80  

Thermal resistance, junction – case

 

R

thJC  

–

–

–

–

°C/W  

Thermal resistance, junction –  

ambient  

R

thJA  

leaded  

Soldering temperature,  

wavesoldering only allowed at  

leads  

T

sold  

–

–

260  

°C  

1.6 mm (0.063 in.)  

from case for 10 s  

Table 5  

Thermal characteristics TO-263 (IPB60R160C6)  

Symbol Values  

Parameter  

Unit  

Note /  

Test Condition  

Min.  

Typ.  

Max.  

0.71  

62  

Thermal resistance, junction – case

 

R

thJC  

–

–

–

–

°C/W  

Thermal resistance, junction –  

ambient  

R

thJA  

SMD version, device  

on PCB, minimal  

footprint  

–

35  

–

SMD version, device  

on PCB, 6cm

2

cooling  

area

1)  

Soldering temperature,  

T

sold  

–

–

260  

°C  

reflow MSL1  

wave- & reflow soldering allowed  

1) Device

 

on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6c

m

2

copper area (thickness 70µm) for drain connection.  

PCB is vertical without air stream cooling.  

Final Data Sheet  

5

Rev. 2.1, 2010-02-09  

Rev. 2.3  

Page 5  

2018-02-26  

600V CoolMOS

”

C6 Power Transistor  

IPx60R160C6  

Electrical characteristics  

4

Electrical characteristics  

Electrical characteristics, at

T

j=25 °C, unless otherwise specified.  

Table 6  

Static characteristics  

Symbol  

Parameter  

Values  

Unit  

V

Note / Test Condition  

Min.  

600  

2.5  

–

Typ.  

Max.  

Drain-source breakdown voltage

 

V

(BR)DSS  

–

–

V

GS

=0 V,

I

D

=0.25 mA  

V

DS

=

V

GS

,

I

D

=0.75 mA  

Gate threshold voltage  

V

GS(th)  

I

DSS  

3

–

3.5  

1

Zero gate voltage drain current  

µA  

V

DS

=600 V,

V

GS

=0 V,  

T

j

=25 °C  

–

10  

–

V

DS

=600 V,

V

GS

=0 V,  

T

j

=150 °C  

Gate-source leakage current  

I

GSS  

–

–

–

100  

nA  

V

GS

=20 V,

V

DS

=0 V  

Drain-source on-state resistance

 

R

DS(on)  

0.14  

0.16  

!

V

GS

=10 V,

I

D

=11.3 A,  

T

j

=25 °C  

–

–

0.37  

6.4  

–

–

V

GS

=10 V,

I

D

=11.3 A,  

T

j

=150 °C  

Gate resistance  

R

G  

!

f

=1 MHz, open drain  

Table 7  

Dynamic characteristics  

Parameter  

Symbol  

Values  

Unit  

Note /  

Test Condition  

Min.  

Typ.  

1660  

100  

66  

Max.  

Input capacitance  

Output capacitance  

C

iss  

–

–

–

–

–

–

pF  

V

GS

=0 V,

V

DS

=100 V,  

f

=1 MHz  

C

oss  

C

o(er)  

Effective output capacitance,  

energy related

1)  

V

GS

=0 V,  

V

DS

=0…480 V  

Effective output capacitance, time

 

C

o(tr)  

related

2)  

–

314  

–

I

D

=constant,

V

GS

=0 V  

V

DS

=0…480V  

Turn-on delay time  

Rise time  

t

d(on)  

t

r  

t

d(off)  

t

f  

–

–

–

–

13  

13  

96  

8

–

–

–

–

ns  

V

DD

=400 V,  

V

GS

=13 V,

I

D

=11.3 A,  

R

G

= 1.7

!

 

Turn-off delay time  

Fall time  

(see table 20)  

1)

C

o(er)

is a fixed capacitance that gives the same stored energy as

C

oss

while V

DS

is rising from 0 to 80% V

(BR)DSS  

2)

C

o(tr)

is a fixed capacitance that gives the same charging time as

C

oss

while V

DS

is rising from 0 to 80% V

(BR)DSS  

Final Data Sheet  

6

Rev. 2.1, 2010-02-09  

Rev. 2.2, 2014-12-02  

Rev. 2.3  

Page 6  

2018-02-26  

600V CoolMOS

”

C6 Power Transistor  

IPx60R160C6  

Electrical characteristics  

Table 8  

Gate charge characteristics  

Symbol  

Parameter  

Values  

Typ.  

Unit  

Note /  

Test Condition  

Min.  

Max.  

Gate to source charge  

Gate to drain charge  

Gate charge total  

Q

gs  

–

–

–

–

9

–

–

–

–

nC  

V

DD

=480 V,  

I

D

=11.3 A,  

Q

gd  

38  

75  

5.4  

V

GS

=0 to 10 V  

Q

g  

Gate plateau voltage  

V

plateau  

V

Table 9  

Reverse diode characteristics  

Symbol  

Parameter  

Values  

Unit  

Note /  

Test Condition  

Min.  

Typ.  

Max.  

Diode forward voltage  

V

SD  

–

0.9  

–

V

V

GS

=0 V,

I

F

=11.3 A,  

T

j

=25 °C  

Reverse recovery time  

t

rr  

–

–

–

460  

8.2  

35  

–

–

–

ns  

µC  

A

V

R

=400 V,

I

F

=11.3 A,  

d

i

F

/d

t

=100 A/µs  

(see table 22)  

Reverse recovery charge  

Peak reverse recovery current  

Q

rr  

I

rrm  

Final Data Sheet  

7

Rev. 2.1, 2010-02-09  

Rev. 2.2, 2014-12-02  

Rev. 2.3  

Page 7  

2018-02-26  

600V CoolMOS

”

C6 Power Transistor  

IPx60R160C6  

Electrical characteristics diagrams  

5

Electrical characteristics diagrams  

Table 10  

Power dissipation  

Power dissipation  

TO-220, TO-247, TO-263  

TO-220 FullPAK  

P

tot

= f(

T

C

)  

P

tot

= f(

T

C

)  

Table 11  

Max. transient thermal impedance  

TO-220, TO-247, TO-263  

Max. transient thermal impedance  

TO-220 FullPAK  

Z

(thJC)

=f(tp); parameter: D=t

p

/T  

Z

(thJC)

=f(tp); parameter: D=t

p

/T  

Final Data Sheet  

8

R

R

e

e

v

v

.

.

2

2

.

.

1

2

,

,

2

2

0

0

1

1

0

4

–

–

0

1

2

2

–

–

0

0

9

2  

Rev. 2.3  

Page 8  

2018-02-26  

600V CoolMOS

”

C6 Power Transistor  

IPx60R160C6  

Electrical characteristics diagrams  

Table 12  

Safe operating area

T

C

=25 °C  

Safe operating area

T

C

=25 °C  

TO-220, TO-247, TO-263  

TO-220 FullPAK  

I

D

=f(V

DS

);

T

C

=25 °C; D=0; parameter

t

p  

I

D

=f(V

DS

);

T

C

=25 °C; D=0; parameter

t

p  

Table 13  

Safe operating area

T

C

=80 °C  

Safe operating area

T

C

=80 °C  

TO-220, TO-247, TO-263  

TO-220 FullPAK  

I

D

=f(V

DS

);

T

C

=80 °C; D=0; parameter

t

p  

I

D

=f(V

DS

);

T

C

=80 °C; D=0; parameter

t

p  

Final Data Sheet  

9

Rev. 2.1, 2010-02-09  

Rev. 2.2, 2014-12-02  

Rev. 2.3  

Page 9  

2018-02-26  

600V CoolMOS

”

C6 Power Transistor  

IPx60R160C6  

Electrical characteristics diagrams  

Table 14  

Typ. output characteristics

T

C

=25 °C  

Typ. output characteristics

T

j

=125 °C  

I

D

=f(

V

DS

);

T

j

=25 °C; parameter:

V

GS  

I

D

=f(

V

DS

);

T

j

=125 °C; parameter:

V

GS  

Table 15  

Typ. drain-source on-state resistance  

Drain-source on-state resistance  

R

DS(on)

=f(

I

D

);

T

j

=125 °C; parameter:

V

GS  

R

DS(on)

=f(

T

j

);

I

D

=11.3 A;

V

GS

=10 V  

Final Data Sheet  

10  

Rev. 2.1, 2010-02-09  

Rev. 2.2, 2014-12-02  

Rev. 2.3  

Page 10  

2018-02-26  

600V CoolMOS

”

C6 Power Transistor  

IPx60R160C6  

Electrical characteristics diagrams  

Table 16  

Typ. transfer characteristics  

Typ. gate charge  

I

D

=f(

V

GS

);

V

DS

=20V  

V

GS

=f(

Q

gate

),

I

D

=11.3 A pulsed  

Table 17  

Avalanche energy  

Drain-source breakdown voltage  

E

AS

=f(

T

j

);

I

D

=4.1 A;

V

DD

=50 V  

V

BR(DSS)

=f(

T

j

);

I

D

=0.25 mA  

Final Data Sheet  

11  

Page 11  

Rev. 2.1, 2010-02-09  

Rev. 2.2, 2014-12-02  

Rev. 2.3  

2018-02-26  

600V CoolMOS

”

C6 Power Transistor  

IPx60R160C6  

Electrical characteristics diagrams  

Table 18  

Typ. capacitances  

Typ.

C

oss

stored energy  

C=f(

V

DS

);

V

GS

=0 V;

f

=1 MHz  

E

OSS

=f(

V

DS

)  

Table 19  

Forward characteristics of reverse diode  

I

F

=f(

V

SD

); parameter:

T

j  

Final Data Sheet  

12  

Page 12  

Rev. 2.1, 2010-02-09  

Rev. 2.2, 2014-12-02  

Rev. 2.3  

2018-02-26  

600V CoolMOS

”

C6 Power Transistor  

IPx60R160C6  

Test circuits  

6

Test circuits  

Table 20  

Switching times test circuit and waveform for inductive load  

Switching times test circuit for inductive load  

Switching time waveform  

V

DS  

90%  

V

DS  

V

GS  

10%  

V

GS  

t

d

(

of

f

)  

t

d(o

n

)  

t

on  

t

f  

t

r  

t

off  

Table 21  

Unclamped inductive load test circuit and waveform  

Unclamped inductive load test circuit  

Unclamped inductive waveform  

V

(BR)DS  

V

D  

I

D  

V

DS  

V

DS  

V

DS  

I

D  

Table 22  

Test circuit and waveform for diode recovery times  

Test circuit for diode recovery times  

Diode recovery waveform  

I

D  

#

/

#

$

!

(

$

”

$  

. )  

00  

R

G1  

(

!

“

!

00  

.

)

$

00  

)

$

$

.

)

V

DS  

%$!  

$

–,  

!

!

R

G2  

.

)

–,  

/

#

00

#/

$  

“

–,  

‘$!  

–,  

R

G1

=

R

G2  

.*+$$$&&  

Final Data Sheet  

13  

Rev. 2.1, 2010-02-09  

Rev. 2.2, 2014-12-0

2  

Rev. 2.3  

Page 13  

2018-02-26  

600V CoolMOS

”

C6 Power Transistor  

IPx60R160C6  

Package outlines  

7

Package outlines  

Figure 1  

Outlines TO-247, dimensions in mm/inches  

Final Data Sheet  

14  

Rev. 2.1, 2010-02-09  

Rev. 2.2, 2014-12-02  

Rev. 2.3  

Page 14  

2018-02-26  

600V CoolMOS

”

C6 Power Transistor  

IPx60R160C6  

Package outlines  

Figure 2  

Outlines TO-220, dimensions in mm/inches  

Final Data Sheet  

15  

Rev. 2.1, 2010-02-09  

Rev. 2.2, 2014-12-02  

Rev. 2.3  

Page 15  

2018-02-26  

6

**M =^^[FGKm =

6

H^fTa LaP]bXbc^a  

CH

x6

*J

160

=

6  

/45<487 @DC=;?7B  

1

2

3

MILLIMETERS  

DIMENSIONS  

MIN.  

4.50  

2.34  

2.42  

0.65  

0.95  

0.95  

0.65  

0.65  

0.40  

15.67  

8.97  

10.00  

MAX.  

4.90  

2.85  

2.86  

0.90  

1.38  

1.51  

1.38  

1.51  

0.63  

16.15  

9.83  

10.65  

DOCUMENT NO.  

A

A1  

A2  

b

Z8B00003319  

REVISION  

07  

b1  

b2  

b3  

b4  

c

SCALE 5:1  

0

1

2

3

4

5mm  

D

EUROPEAN PROJECTION  

D1  

E

e

2.54  

H

28.70  

12.78  

2.83  

29.75  

13.75  

3.45  

L

L1  

øP  

Q

ISSUE DATE  

3.00  

3.30  

27.01.2017  

3.15  

3.50  

Figure

3  

Outline

PG­TO­220 FullPAK

dimensions in mm  

>X]P[ <PcP KWTTc  

+

6  

Page 16  

JTe( ,(,&

 

,*+.’

12

‘

02  

2018-02-26  

Rev. 2.3  

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Rev. 2.3  

Page 17  

2018-02-26  

600VꢀCoolMOSªꢀC6ꢀPowerꢀTransistor  

IPx60R160C6  

RevisionꢀHistory  

IPx60R160C6  

Revision:ꢀ2018-03-04,ꢀRev.ꢀ2.3  

Previous Revision  

Revision Date  

Subjects (major changes since last revision)  

2.0  

2.1  

2.2  

2.3  

Release of final data sheet  

2011-06-08  

2011-09-14  

2015-02-03  

2018-03-04  

–

PG-TO220 FullPAK package outline update (creation:2014-12-02)  

Outline PG-TO220 FullPAK update  

TrademarksꢀofꢀInfineonꢀTechnologiesꢀAG  

AURIX™,ꢀC166™,ꢀCanPAK™,ꢀCIPOS™,ꢀCoolGaN™,ꢀCoolMOS™,ꢀCoolSET™,ꢀCoolSiC™,ꢀCORECONTROL™,ꢀCROSSAVE™,ꢀDAVE™,ꢀDI-POL™,ꢀDrBlade™,  

EasyPIM™,ꢀEconoBRIDGE™,ꢀEconoDUAL™,ꢀEconoPACK™,ꢀEconoPIM™,ꢀEiceDRIVER™,ꢀeupec™,ꢀFCOS™,ꢀHITFET™,ꢀHybridPACK™,ꢀInfineon™,  

ISOFACE™,ꢀIsoPACK™,ꢀi-Wafer™,ꢀMIPAQ™,ꢀModSTACK™,ꢀmy-d™,ꢀNovalithIC™,ꢀOmniTune™,ꢀOPTIGA™,ꢀOptiMOS™,ꢀORIGA™,ꢀPOWERCODE™,  

PRIMARION™,ꢀPrimePACK™,ꢀPrimeSTACK™,ꢀPROFET™,ꢀPRO-SIL™,ꢀRASIC™,ꢀREAL3™,ꢀReverSave™,ꢀSatRIC™,ꢀSIEGET™,ꢀSIPMOS™,ꢀSmartLEWIS™,  

SOLIDꢀFLASH™,ꢀSPOC™,ꢀTEMPFET™,ꢀthinQꢁ™,ꢀTRENCHSTOP™,ꢀTriCore™.  

TrademarksꢀupdatedꢀAugustꢀ2015  

OtherꢀTrademarks  

Allꢀreferencedꢀproductꢀorꢀserviceꢀnamesꢀandꢀtrademarksꢀareꢀtheꢀpropertyꢀofꢀtheirꢀrespectiveꢀowners.  

WeꢀListenꢀtoꢀYourꢀComments  

Anyꢀinformationꢀwithinꢀthisꢀdocumentꢀthatꢀyouꢀfeelꢀisꢀwrong,ꢀunclearꢀorꢀmissingꢀatꢀall?ꢀYourꢀfeedbackꢀwillꢀhelpꢀusꢀtoꢀcontinuously  

improveꢀtheꢀqualityꢀofꢀthisꢀdocument.ꢀPleaseꢀsendꢀyourꢀproposalꢀ(includingꢀaꢀreferenceꢀtoꢀthisꢀdocument)ꢀto:  

Publishedꢀby  

InfineonꢀTechnologiesꢀAG  

81726ꢀMünchen,ꢀGermany  

©ꢀ2018ꢀInfineonꢀTechnologiesꢀAG  

AllꢀRightsꢀReserved.  

LegalꢀDisclaimer  

Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ  

(“Beschaffenheitsgarantie”)ꢀ.  

Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe  

product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation  

warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.  

Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis  

documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe  

productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.  

Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s  

technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct  

informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.  

Information  

Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon  

TechnologiesꢀOfficeꢀ(

).  

Warnings  

Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,  

pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.  

TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or  

automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa  

failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand  

aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare  

intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis  

reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.  

18  

Rev.ꢀ2.3,ꢀꢀ2018-03-04