Infineon-Technologies-IPW65R041CFD
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MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS™ CFD2 650V
650V CoolMOS™ CFD2 Power Transistor
IPW65R041CFD
Data Sheet
Rev. 2.0
Final
Industrial & Multimarket
650V CoolMOS™ CFD2 Power Transistor
IPW65R041CFD
TO-247
1
Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. 650V CoolMOS™ CFD2 series
combines the experience of the leading SJ MOSFET supplier with high
class innovation. The resulting devices provide all benefits of a fast
switching SJ MOSFET while offering an extremely fast and robust body
diode. This combination of extremely low switching, commutation and
conduction losses together with highest robustness make especially
resonant switching applications more reliable, more efficient, lighter and
cooler.
drain
pin 2
Features
• Ultra-fast body diode
• Very high commutation ruggedness
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Easy to use/drive
gate
pin 1
• Pb-free plating, Halogen free mold compound
• Qualified for industrial grade applications according to JEDEC
(J-STD20 and JESD22)
source
pin 3
Applications
650V CoolMOS™ CFD2 is especially suitable for resonant switching PWM
stages for e.g. PC Silverbox, LCD TV, Lighting, Server,Telecom and Solar.
Please note: For MOSFET paralleling the use of ferrite beads on
the gate or separate totem poles is generally recommended.
Table 1
Key Performance Parameters
Parameter
V‡» @ TÎ ÑÈà
RDS(on),max
Qg,typ
Value
700
0.041
300
255
22.5
900
1.9
Unit
V
Â
nC
A
ID,pulse
Eoss @ 400V
Body diode di/dt
Qrr
µJ
A/µs
µC
ns
A
trr
250
15
Irrm
Type / Ordering Code
IPW65R041CFD
Package
Marking
65F6041
Related Links
PG-TO 247
see Appendix A
Final Data Sheet
Rev. 2.0,
2011-10-13
2
650V CoolMOS™ CFD2 Power Transistor
IPW65R041CFD
Table of Contents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Final Data Sheet
Rev. 2.0,
2011-10-13
3
650V CoolMOS™ CFD2 Power Transistor
IPW65R041CFD
2
Maximum ratings
at
T
Î = 25°C, unless otherwise specified
Table 2
Maximum ratings
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Continuous drain current
1)
I
‡
68.5
43.3
255
A
T
† = 25°C
T
† = 100°C
T
† = 25°C
Pulsed drain current
2)
I
‡‚ÔÛÐÙþ
E
ƒ»
A
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
2185 mJ
I
‡ = 13.7A,
V
‡‡ = 50V
3.31 mJ
I
‡ = 13.7A,
V
‡‡ = 50V
E
ƒ¸
I
ƒ¸
13.7
50
A
dv/dt
V
•»
V/ns
V
‡» = 0 … 400V
-20
-30
20
V
static
30
AC (f > 1 Hz)
Power dissipation (non FullPAK)
TO-247
P
ÚÓÚ
500.0 W
T
† = 25°C
Operating and storage temperature
T
΂
T
ÙÚÃ
-55
150
60
°C
Ncm M3
and M3.5 screws
Mounting torque (non FullPAK)
TO-247
Continuous diode forward current
Diode pulse current
I
»
68.5
255
50
A
T
† = 25°C
T
† = 25°C
I
»‚ÔÛÐÙþ
dv/dt
diË/dt
A
Reverse diode dv/dt
3)
V/ns
A/µs
V
‡» = 0 … 400V,
I
»‡ ù
I
‡,
T
Î = 25°C
Maximum diode commutation speed
900
1)
Limited by TÎ ÑÈà.
2)
Pulse width tÔ limited by TÎ ÑÈà
3)
VÔþÈÏ<Vñ…¸ò‡»», TÎ<TÎ ÑÈà, identical low and high side switch with same Rg
Final Data Sheet
Rev. 2.0,
2011-10-13
4
650V CoolMOS™ CFD2 Power Transistor
IPW65R041CFD
3
Thermal characteristics
Table 3
Thermal characteristics TO-247
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Thermal resistance, junction – case
Thermal resistance, junction – ambient
R
ÚÌœ†
R
ÚÌœƒ
0.25 °C/W
62
°C/W leaded
Soldering temperature, wavesoldering only
allowed at leads
1.6 mm (0.063 in.) from case for
10s
T
ÙÓÐÁ
260
°C
Final Data Sheet
Rev. 2.0,
2011-10-13
5
650V CoolMOS™ CFD2 Power Transistor
IPW65R041CFD
4
Electrical characteristics
at
T
Î = 25°C, unless otherwise specified
Table 4
Static characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Drain-source breakdown voltage
Gate threshold voltage
V
ñ…¸ò‡»» 650
V
V
•» = 0V,
I
‡ = 1mA
V
•»ñÚÌò
I
‡»»
3.5
4
4.5
3.5
V
V
‡» =
V
•»,
I
‡ = 3.3mA
Zero gate voltage drain current
µA
V
‡» = 650V,
V
•» = 0V,
T
Î = 25°C
V
‡» = 650V,
V
•» = 0V,
T
Î = 150°C
1000
Gate-source leakage current
I
•»»
100
nA
V
•» = 20V,
V
‡» = 0V
Drain-source on-state resistance
R
‡»ñÓÒò
0.037 0.041 Â
0.096
V
•» = 10V,
I
‡ = 33.1A,
T
Î = 25°C
V
•» = 10V,
I
‡ = 33.1A,
T
Î = 150°C
Gate resistance
R
•
0.7
Â
f
= 1MHz, open drain
Table 5
Dynamic characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Input capacitance
C
ÍÙÙ
8400
400
pF
pF
V
•» = 0V,
V
‡» = 100V,
f
= 1MHz
Output capacitance
C
ÓÙÙ
Effective output capacitance, energy
related
1)
C
ÓñþØò
288
pF
pF
V
•» = 0V,
V
‡» = 0 … 400V
I
‡ = constant,
V
•» = 0V,
V
‡» = 0 … 400V
Effective output capacitance, time related
2)
C
ÓñÚØò
1485
Turn-on delay time
Rise time
t
ÁñÓÒò
t
Ø
34
28
127
8
ns
ns
ns
ns
V
‡‡ = 400V,
V
•» = 13V,
I
‡ = 49.6A,
R
• = 1.8Â
Turn-off delay time
Fall time
t
ÁñÓËËò
t
Ë
Table 6
Gate charge characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
ÃÙ
54
nC
nC
nC
V
V
‡‡ = 480V,
I
‡ = 49.6A,
V
•» = 0 to 10V
Q
ÃÁ
165
300
6.5
Q
Ã
Gate plateau voltage
V
ÔÐÈÚþÈÛ
1)
CÓñþØò is a fixed capacitance that gives the same stored energy as CÓÙÙ while V‡» is rising from 0 to 400V
2)
CÓñÚØò is a fixed capacitance that gives the same charging time as CÓÙÙ while V‡» is rising from 0 to 400V
Final Data Sheet
Rev. 2.0,
2011-10-13
6
650V CoolMOS™ CFD2 Power Transistor
IPW65R041CFD
Table 7
Reverse diode characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Diode forward voltage
V
»‡
t
ØØ
1
V
V
•» = 0V,
I
Π= 49.6A,
T
Î = 25°C
Reverse recovery time
250
1.9
15
ns
µC
A
V
¸ = 400V,
I
Π= 49.6A,
d
i
Œ/d
t
= 100A/µs
Reverse recovery charge
Peak reverse recovery current
Q
ØØ
I
ØØÑ
Final Data Sheet
Rev. 2.0,
2011-10-13
7
650V CoolMOS™ CFD2 Power Transistor
IPW65R041CFD
5
Electrical characteristics diagrams
Table 8
Power dissipation (Non FullPAK)
Max. transient thermal impedance (Non FullPAK)
600
10
0
500
400
300
0.5
10
-1
0.2
0.1
0.05
P
P
P
P
Z
Z
Z
Z
0.02
200
100
0
10
-2
0.01
single pulse
10
-3
0
40
80
T
C
[°C]
120
160
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
t
p
[s]
P
tot
=f(
T
C
)
Z
thJC
=f(
t
P
); parameter:
D=t
p
/
T
Table 9
Safe operating area T†=25°C (Non FullPAK)
Safe operating area T†=80°C (Non FullPAK)
10
3
10
3
1 µs
1 µs
10 µs
10
2
10
1
10
2
10
1
10 µs
100 µs
1 ms
100 µs
1 ms
10 ms
DC
10 ms
DC
I
I
I
I
II
II
10
0
10
-1
10
-2
10
0
10
-1
10
-2
10
0
10
1
10
2
10
3
10
0
10
1
10
2
10
3
V
DS
[V]
V
DS
[V]
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0; parameter:
t
p
;Vgs>7.5V;
Final Data Sheet
I
D
=f(
V
DS
);
T
C
=80 °C;
D
=0; parameter:
t
p
; Vgs>7.5V;
Rev. 2.0,
2011-10-13
8
650V CoolMOS™ CFD2 Power Transistor
IPW65R041CFD
Table 10
Typ. output characteristics T†=25°C
Typ. output characteristics T†=125°C
300
200
20 V
20 V
180
10 V
10 V
250
8 V
8 V
160
7 V
7 V
140
6 V
200
150
100
50
6 V
5.5 V
5 V
120
5.5 V
5 V
100
I
I
I
I
II
II
4.5 V
4.5 V
80
60
40
20
0
0
0
5
10
V
DS
[V]
15
20
0
5
10
V
DS
[V]
15
20
I
D
=f(
V
DS
);
T
j
=25 °C; parameter:
V
GS
I
D
=f(
V
DS
);
T
j
=125 °C; parameter:
V
GS
Table 11
Typ. drain-source on-state resistance
Drain-source on-state resistance
1.00
0.12
0.90
0.80
0.70
0.60
0.50
0.10
0.08
0.06
98%
typ
R
R
R
R
RR
RR
0.40
0.30
0.20
0.10
0.00
0.04
0.02
0.00
5 V
5.5 V
6 V
6.5 V
7 V
10 V
0
10
20
30
40
50
60
70
-60 -40 -20
0
20 40 60 80
100 120 140 160 180
T
j
[°C]
I
D
[A]
R
DS(on)
=f(
I
D
);
T
j
=125 °C; parameter:
V
GS
R
DS(on)
=f(
T
j
);
I
D
=33.1 A;
V
GS
=10 V
Final Data Sheet
Rev. 2.0,
2011-10-13
9
650V CoolMOS™ CFD2 Power Transistor
IPW65R041CFD
Table 12
Typ. transfer characteristics
Typ. gate charge
300
10
9
25 °C
250
200
150
8
120 V
480 V
7
6
5
150 °C
I
I
I
I
V
V
V
V
4
3
2
1
0
100
50
0
0
2
4
6
8
10
0
100
200
Q
gate
[nC]
300
400
V
GS
[V]
I
D
=f(
V
GS
); |
V
DS
|=20V;
V
GS
=f(
Q
gate
);
I
D
=49.6 A pulsed; parameter:
V
DD
Table 13
Avalanche energy
Drain-source breakdown voltage
2500
760
740
720
700
680
660
640
2000
1500
E
E
E
E
1000
500
0
V
V
V
V
620
600
580
560
540
0
50
100
T
j
[°C]
150
200
-60
-20
20
60
T
j
[°C]
100
140
180
E
AS
=f(
T
j
);
I
D
=13.7A;
V
DD
=50 V
V
BR(DSS)
=f(
T
j
);
I
D
=10 mA
Final Data Sheet
Rev. 2.0,
2011-10-13
10
650V CoolMOS™ CFD2 Power Transistor
IPW65R041CFD
Table 14
Typ. capacitances
Typ. CÓÙÙ stored energy
10
5
45
40
35
30
25
20
Ciss
10
4
10
3
C
C
C
C
Coss
Crss
E
E
E
E
10
2
10
1
10
0
15
10
5
0
0
100
200
300
V
DS
[V]
400
500
600
0
100
200
300
V
DS
[V]
400
500
600
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
E
oss
=
f
(V
DS
)
Table 15
Forward characteristics of reverse diode
10
2
125 °C
25 °C
10
1
I
I
I
I
10
0
10
-1
0.0
0.5
1.0
1.5
2.0
2.5
V
SD
[V]
I
F
=f(
V
SD
); parameter:
T
j
Final Data Sheet
Rev. 2.0,
2011-10-13
11
650V CoolMOS™ CFD2 Power Transistor
IPW65R041CFD
6
Test Circuits
Table 16
Diode_characteristics
Test circuit for diode characteristics
Diode recovery waveform
I
D
R
G1
V
DS
R
G2
R
G1
=
R
G2
Table 17
Switching_times
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
V
DS
V
GS
10%
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Table 18
Unclamped_inductive
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
V
D
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
Rev. 2.0,
2011-10-13
12
650V CoolMOS™ CFD2 Power Transistor
IPW65R041CFD
7
Package Outlines
Figure 1
Outline PG-TO 247, dimensions in mm/inches
Final Data Sheet
Rev. 2.0,
2011-10-13
13
650V CoolMOS™ CFD2 Power Transistor
IPW65R041CFD
8
Appendix A
Table 19
Related Links
IFX Design Tools:
•
IFX CoolMOS Webpage:
•
Final Data Sheet
Rev. 2.0,
2011-10-13
14
650V CoolMOS™ CFD2 Power Transistor
IPW65R041CFD
Revision History
IPW65R041CFD
Revision: 2011-10-13, Rev. 2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
release of final datasheet
2011-10-13
We Listen to Your Comments
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continuously improve the quality of this document. Please send your proposal (including a reference to this document) to:
Edition 2011-08-01
Published by
Infineon Technologies AG
81726 München, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With
respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the
application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including
without limitation, warranties of non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (
).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in question,
please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or
automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies,
if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and
aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems
are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they
fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
Rev. 2.0,
2011-10-13
15
