Infineon-Technologies-IPW65R080CFDA
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MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CFDA Automotive
650V CoolMOS™ CFDA Power Transistor
IPW65R080CFDA
Data Sheet
Rev. 2.1
Final
Automotive
650V CoolMOS™ CFDA Power Transistor
IPW65R080CFDA
TO-247
1
Description
CoolMOS™ is a revolutionary technology for high voltage power
MOSFETs, designed according to the superjunction (SJ) principle and
pioneered by Infineon Technologies. 650V CoolMOS™ CFDA series
combines the experience of the leading SJ MOSFET supplier with high
class innovation. The resulting devices provide all benefits of a fast
switching SJ MOSFET while offering an extremely fast and robust body
diode. This combination of extremely low switching, commutation and
conduction losses together with highest robustness make especially
resonant switching applications more reliable, more efficient, lighter, and
cooler.
drain
pin 2
Features
• Ultra-fast body diode
• Very high commutation ruggedness
• Extremely low losses due to very low FOM Rdson*Qg and Eoss
• Easy to use/drive
gate
pin 1
• Qualified according to AEC Q101
• Green package (RoHS compliant), Pb-free plating, halogen free for mold
compound
source
pin 3
Applications
650V CoolMOS™ CFDA is designed for switching applications.
Table 1
Key Performance Parameters
Parameter
Value
650
0.08
161
137
12.5
900
1.2
Unit
V‡»
V
RDS(on),max
Qg,typ
Â
nC
A
ID,pulse
Eoss @ 400V
Body diode di/dt
Qrr
µJ
A/µs
µC
ns
A
trr
180
10
Irrm
Type / Ordering Code
IPW65R080CFDA
Package
Marking
Related Links
–
PG-TO 247
65F6080A
Final Data Sheet
Rev. 2.1,
2012-04-02
2
650V CoolMOS™ CFDA Power Transistor
IPW65R080CFDA
Table of Contents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2
Table of Contents
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Final Data Sheet
Rev. 2.1,
2012-04-02
3
650V CoolMOS™ CFDA Power Transistor
IPW65R080CFDA
2
Maximum ratings
at
T
Î = 25°C, unless otherwise specified
Table 2
Maximum ratings
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Continuous drain current
1)
I
‡
43.3
27.4
137
A
T
† = 25°C
T
† = 100°C
T
† = 25°C
Pulsed drain current
2)
I
‡‚ÔÛÐÙþ
E
ƒ»
A
I
‡ = 8.7A,
V
‡‡ = 50V
(see table 18)
Avalanche energy, single pulse
1160 mJ
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage
E
ƒ¸
I
ƒ¸
dv/dt
V
•»
1.76 mJ
I
‡ = 8.7A,
V
‡‡ = 50V
8.7
50
20
30
A
V/ns
V
‡» = 0 … 400V
-20
-30
V
static
AC (f > 1 Hz)
Power dissipation (non FullPAK)
TO-247
P
ÚÓÚ
391
150
60
W
T
† = 25°C
Operating and storage temperature
T
΂
T
ÙÚÃ
-40
°C
Mounting torque (non FullPAK)
TO-247
Ncm M3
and M3.5 screws
Continuous diode forward current
Diode pulse current
I
»
43.3
140
A
A
T
† = 25°C
T
† = 25°C
I
»‚ÔÛÐÙþ
V
‡» = 0 … 400V,
I
»‡ ù
I
‡,
T
Î = 25°C
(see table 16)
Reverse diode dv/dt
3)
dv/dt
diË/dt
50
V/ns
A/µs
Maximum diode commutation speed
900
1)
Limited by TÎ ÑÈà.
2)
Pulse width tÔ limited by TÎ ÑÈà
3)
Identical low side and high side switch with identical R•
Final Data Sheet
Rev. 2.1,
2012-04-02
4
650V CoolMOS™ CFDA Power Transistor
IPW65R080CFDA
3
Thermal characteristics
Table 3
Thermal characteristics TO-247
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Thermal resistance, junction – case
Thermal resistance, junction – ambient
R
ÚÌœ†
R
ÚÌœƒ
0.32 K/W
62
K/W leaded
Soldering temperature, wavesoldering only
allowed at leads
1.6 mm (0.063 in.) from case for
10s
T
ÙÓÐÁ
260
°C
Final Data Sheet
Rev. 2.1,
2012-04-02
5
650V CoolMOS™ CFDA Power Transistor
IPW65R080CFDA
4
Electrical characteristics
at
T
Î = 25°C, unless otherwise specified
Table 4
Static characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Drain-source breakdown voltage
1)
Gate threshold voltage
V
ñ…¸ò‡»» 650
V
V
•» = 0V,
I
‡ = 1mA
V
•»ñÚÌò
I
‡»»
3.5
4
4.5
2
V
V
‡» =
V
•»,
I
‡ = 1.76mA
V
‡» = 650V,
V
•» = 0V,
T
Î = 25°C
Zero gate voltage drain current
µA
V
‡» = 650V,
V
•» = 0V,
T
Î = 150°C
500
Gate-source leakage current
I
•»»
100
nA
Â
V
•» = 20V,
V
‡» = 0V
Drain-source on-state resistance
R
‡»ñÓÒò
0.072 0.08
0.19
V
•» = 10V,
I
‡ = 17.6A,
T
Î = 25°C
V
•» = 10V,
I
‡ = 17.6A,
T
Î = 150°C
Gate resistance
R
•
0.75
Â
f
= 1MHz, open drain
Table 5
Dynamic characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Input capacitance
C
ÍÙÙ
4440
210
pF
pF
V
•» = 0V,
V
‡» = 100V,
f
= 1MHz
Output capacitance
C
ÓÙÙ
Effective output capacitance, energy
related
2)
C
ÓñþØò
160
754
pF
pF
V
•» = 0V,
V
‡» = 0 … 400V
I
‡ = constant,
V
•» = 0V,
V
‡» = 0 … 400V
Effective output capacitance, time related
3)
C
ÓñÚØò
Turn-on delay time
Rise time
t
ÁñÓÒò
t
Ø
20
18
85
6
ns
ns
ns
ns
V
‡‡ = 400V,
V
•» = 13V,
I
‡ = 26.3A,
R
• = 1.8Â
(see table 17)
Turn-off delay time
Fall time
t
ÁñÓËËò
t
Ë
Table 6
Gate charge characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
ÃÙ
28
nC
nC
nC
V
V
‡‡ = 480V,
I
‡ = 26.3A,
V
•» = 0 to 10V
Q
ÃÁ
87
Q
Ã
161
6.4
Gate plateau voltage
V
ÔÐÈÚþÈÛ
1)
For applications with applied blocking voltage > 65% of the specified blocking voltage, we recommend to
evaluate the impact of the cosmic radiation effect in early design phase. For assessment please contact local
Infineon sales office.
2)
CÓñþØò is a fixed capacitance that gives the same stored energy as CÓÙÙ while V‡» is rising from 0 to 400V
3)
CÓñÚØò is a fixed capacitance that gives the same charging time as CÓÙÙ while V‡» is rising from 0 to 400V
Final Data Sheet
Rev. 2.1,
2012-04-02
6
650V CoolMOS™ CFDA Power Transistor
IPW65R080CFDA
Table 7
Reverse diode characteristics
Values
Parameter
Symbol
Unit Note
/ Test Condition
Min. Typ. Max.
Diode forward voltage
V
»‡
t
ØØ
0.9
180
1.2
10
V
V
•» = 0V,
I
Π= 26.3A,
T
Î = 25°C
Reverse recovery time
ns
µC
A
V
¸ = 400V,
I
Π= 26.3A,
d
i
Œ/d
t
= 100A/µs
(see table 16)
Reverse recovery charge
Peak reverse recovery current
Q
ØØ
I
ØØÑ
Final Data Sheet
Rev. 2.1,
2012-04-02
7
650V CoolMOS™ CFDA Power Transistor
IPW65R080CFDA
5
Electrical characteristics diagrams
Table 8
Power dissipation
Max. transient thermal impedance
450
10
0
400
350
300
250
200
0.5
10
-1
0.2
P
P
P
P
0.1
Z
Z
Z
Z
0.05
150
100
50
0.02
0.01
single pulse
0
10
-2
0
50
100
150
10
-5
10
-4
10
-3
t
p
[s]
10
-2
10
-1
T
C
[°C]
P
tot
=f(
T
C
)
Z
thJC
=f(
t
P
); parameter:
D=t
p
/
T
Table 9
Typ. output characteristics
Typ. output characteristics
150
90
20 V
20 V
80
70
60
50
40
30
20
10
0
10 V
10 V
8 V
125
8 V
7 V
7 V
100
75
50
25
0
6 V
5.5 V
5 V
6 V
5.5 V
5 V
I
I
I
I
II
II
4.5 V
4.5 V
0
5
10
V
DS
[V]
15
20
0
5
10
V
DS
[V]
15
20
I
D
=f(
V
DS
);
T
j
=25 °C; parameter:
V
GS
Final Data Sheet
I
D
=f(
V
DS
);
T
j
=125 °C; parameter:
V
GS
Rev. 2.1,
2012-04-02
8
650V CoolMOS™ CFDA Power Transistor
IPW65R080CFDA
Table 10
Typ. drain-source on-state resistance
Typ. drain-source on-state resistance
0.3
0.25
0.20
0.15
5 V
0.2
5.5 V
6 V
R
R
R
R
RR
RR
0.10
0.05
0.00
6.5 V
7 V
10 V
0.1
1
11
21
I
D
[A]
31
41
-40
0
40
80
120
160
T
j
[°C]
R
DS(on)
=f(
I
D
);
T
j
=125 °C; parameter:
V
GS
R
DS(on)
=f(
T
j
);
I
D
=18.1 A;
V
GS
=10 V
Table 11
Typ. transfer characteristics
Safe operating area
140
10
3
150 °C
1 µs
25 °C
10 µs
120
100 µs
10
2
1 ms
100
80
10 ms
DC
10
1
I
I
I
I
II
II
60
40
20
0
10
0
10
-1
0
2
4
6
8
10
10
0
10
1
10
2
10
3
V
GS
[V]
V
DS
[V]
I
D
=f(
V
GS
); |
V
DS
|>2|
I
D
|
R
DS(on)max
; parameter:
T
j
I
D
=f(
V
DS
);
T
C
=25 °C;
D
=0; parameter:
t
p
Final Data Sheet
Rev. 2.1,
2012-04-02
9
650V CoolMOS™ CFDA Power Transistor
IPW65R080CFDA
Table 12
Safe operating area
Typ. gate charge
10
3
10
1 µs
9
10 µs
100 µs
8
120 V
10
2
1 ms
7
480 V
10 ms
DC
6
5
10
1
I
I
I
I
V
V
V
V
4
3
2
1
0
10
0
10
-1
10
0
10
1
10
2
10
3
0
20
40
60
80 100
120 140 160 180
Q
gate
[nC]
V
DS
[V]
I
D
=f(
V
DS
);
T
C
=80 °C;
D
=0; parameter:
t
p
V
GS
=f(
Q
gate
);
I
D
=6.5 A pulsed; parameter:
V
DD
Table 13
Typ. forward characteristics of reverse diode
Avalanche energy
10
2
1200
125 °C
1100
1000
900
25 °C
10
1
800
700
600
I
I
I
I
E
E
E
E
500
400
300
200
100
0
10
0
10
-1
0.0
0.5
1.0
1.5
25
50
75
100
125
150
V
SD
[V]
T
j
[°C]
I
F
=f(
V
SD
); parameter:
T
j
E
AS
=f(
T
j
);
I
D
=6.6 A;
V
DD
=50 V
Final Data Sheet
Rev. 2.1,
2012-04-02
10
650V CoolMOS™ CFDA Power Transistor
IPW65R080CFDA
Table 14
Drain-source breakdown voltage
Typ. capacitances
760
10
5
Ciss
740
720
700
680
660
640
Coss
Crss
10
4
10
3
C
C
C
C
10
2
10
1
10
0
V
V
V
V
620
600
580
560
540
-40
0
40
80
T
j
[°C]
120
160
0
100
200
300
V
DS
[V]
400
500
600
V
BR(DSS)
=f(
T
j
);
I
D
=0.25 mA
C
=f(
V
DS
);
V
GS
=0 V;
f
=1 MHz
Table 15
Typ. Coss stored energy
22
20
18
16
14
12
10
E
E
E
E
8
6
4
2
0
0
100
200
300
V
DS
[V]
400
500
600
E
oss
=
f
(V
DS
)
Final Data Sheet
Rev. 2.1,
2012-04-02
11
650V CoolMOS™ CFDA Power Transistor
IPW65R080CFDA
6
Test Circuits
Table 16
Diode characteristics
Test circuit for diode characteristics
Diode recovery waveform
I
D
R
G1
V
DS
R
G2
R
G1
=
R
G2
Table 17
Switching times
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
V
DS
V
GS
10%
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Table 18
Unclamped inductive
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
V
D
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
Rev. 2.1,
2012-04-02
12
650V CoolMOS™ CFDA Power Transistor
IPW65R080CFDA
7
Package Outlines
Figure 1
Outline PG-TO 247, dimensions in mm/inches
Final Data Sheet
Rev. 2.1,
2012-04-02
13
650V CoolMOS™ CFDA Power Transistor
IPW65R080CFDA
Revision History
IPW65R080CFDA
Revision: 2012-04-02, Rev. 2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
2.0
2.1
Final datasheet
–
2012-03-28
2012-04-02
Disclaimer ATV
We Listen to Your Comments
Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to
continuously improve the quality of this document. Please send your proposal (including a reference to this document) to:
Edition 2011-09-30
Published by
Infineon Technologies AG
81726 München, Germany
© 2011 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and
liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third
party.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (
).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life.
If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
Rev. 2.1,
2012-04-02
14
