Infineon-Technologies-IPZ60R070P6
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MOSFET
MetalꢀOxideꢀSemiconductorꢀFieldꢀEffectꢀTransistor
CoolMOS™ꢀP6
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPZ60R070P6
DataꢀSheet
Rev.ꢀ2.0
Final
PowerꢀManagementꢀ&ꢀMultimarket
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPZ60R070P6
PG-TOꢀ247-4
1ꢀꢀꢀꢀꢀDescription
CoolMOS™ꢀisꢀaꢀrevolutionaryꢀtechnologyꢀforꢀhighꢀvoltageꢀpower
MOSFETs,ꢀdesignedꢀaccordingꢀtoꢀtheꢀsuperjunctionꢀ(SJ)ꢀprincipleꢀand
pioneeredꢀbyꢀInfineonꢀTechnologies.ꢀCoolMOS™ꢀP6ꢀseriesꢀcombinesꢀthe
experienceꢀofꢀtheꢀleadingꢀSJꢀMOSFETꢀsupplierꢀwithꢀhighꢀclassꢀinnovation.
TheꢀofferedꢀdevicesꢀprovideꢀallꢀbenefitsꢀofꢀaꢀfastꢀswitchingꢀSJꢀMOSFET
whileꢀnotꢀsacrificingꢀeaseꢀofꢀuse.ꢀExtremelyꢀlowꢀswitchingꢀandꢀconduction
lossesꢀmakeꢀswitchingꢀapplicationsꢀevenꢀmoreꢀefficient,ꢀmoreꢀcompact,
lighterꢀandꢀcooler.
Features
•ꢀIncreasedꢀMOSFETꢀdv/dtꢀruggedness
•ꢀExtremelyꢀlowꢀlossesꢀdueꢀtoꢀveryꢀlowꢀFOMꢀRdson*QgꢀandꢀEoss
•ꢀVeryꢀhighꢀcommutationꢀruggedness
Drain
Pin 1
•ꢀBestꢀinꢀclassꢀR
DS(on)
ꢀ/package
•ꢀꢀEasyꢀtoꢀuse/driveꢀdueꢀtoꢀdriverꢀsourceꢀpinꢀforꢀbetterꢀcontrolꢀofꢀtheꢀgate
•ꢀPb-freeꢀplating,ꢀHalogenꢀfreeꢀmoldꢀcompound
•ꢀQualifiedꢀforꢀindustrialꢀgradeꢀapplicationsꢀaccordingꢀtoꢀJEDECꢀ(J-STD20
andꢀJESD22)
Gate
Pin 4
Driver
Source
Pin 3
Power
Source
Pin 2
•ꢀ4-pinꢀkelvinꢀsourceꢀconcept
Applications
PFCꢀstages,ꢀhardꢀswitchingꢀPWMꢀstagesꢀandꢀresonantꢀswitchingꢀstages
forꢀe.g.ꢀComputing,ꢀServer,ꢀTelecomꢀandꢀUPS.
Pleaseꢀnote:ꢀForꢀMOSFETꢀparallelingꢀtheꢀuseꢀofꢀferriteꢀbeadsꢀonꢀtheꢀgate
orꢀseparateꢀtotemꢀpolesꢀisꢀgenerallyꢀrecommended.
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
V
DS
@ T
j,max
R
DS(on),max
Q
g.typ
Value
650
70
Unit
V
m
Ω
nC
A
100
156
12.3
250
I
D,pulse
E
oss
@400V
Body diode di/dt
µJ
A/µs
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IPZ60R070P6
PG-TO 247-4
6R070P6
see Appendix A
Final Data Sheet
2
Rev.ꢀ2.0,ꢀꢀ2015-07-13
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPZ60R070P6
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
8
Test Circuits
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
13
Appendix A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
14
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
15
Final Data Sheet
3
Rev.ꢀ2.0,ꢀꢀ2015-07-13
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPZ60R070P6
2ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
j
ꢀ=ꢀ25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
–
–
–
–
53.5
33.8
T
C
=25°C
A
Continuous drain current
1)
I
D
T
C
=100°C
Pulsed drain current
2)
I
D,pulse
E
AS
E
AR
I
AR
–
–
–
–
–
–
–
–
–
–
–
–
–
–
156
A
T
C
=25°C
Avalanche energy, single pulse
Avalanche energy, repetitive
Avalanche current, repetitive
MOSFET dv/dt ruggedness
Gate source voltage (static)
Gate source voltage (dynamic)
Power dissipation
–
1136 mJ
I
D
=9.3A; V
DD
=50V; see table 10
–
1.72
9.3
mJ
A
I
D
=9.3A; V
DD
=50V; see table 10
–
–
dv/dt
V
GS
V
GS
P
tot
T
stg
T
j
–
100
20
V/ns
V
DS
=0…400V
-20
-30
–
V
static;
30
V
AC (f>1 Hz)
391
150
150
60
W
°C
°C
T
C
=25°C
Storage temperature
-55
-55
–
–
–
Operating junction temperature
Mounting torque
–
Ncm M3
and M3.5 screws
Continuous diode forward current
Diode pulse current
2)
I
S
–
46.3
156
A
A
T
C
=25°C
I
S,pulse
–
T
C
=25°C
V
DS
=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 8
Reverse diode dv/dt
3)
dv/dt
di
f
/dt
–
–
–
–
15
V/ns
V
DS
=0…400V,ꢀ
I
SD
<=
I
S
,ꢀ
T
j
=25°Cꢀꢀꢀꢀꢀꢀꢀꢀ
see table 8
Maximum diode commutation speed
250
A/
µ
s
1)
Limited by T
j max
. Maximum duty cycle D=0.75
2)
Pulse width t
p
limited by T
j,max
3)
ꢀIdenticalꢀlowꢀsideꢀandꢀhighꢀsideꢀswitchꢀwithꢀidenticalꢀ
R
G
Final Data Sheet
4
Rev.ꢀ2.0,ꢀꢀ2015-07-13
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPZ60R070P6
3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.32
62
Thermal resistance, junction – case
R
thJC
–
–
–
–
°C/W –
Thermal resistance, junction – ambient
R
thJA
°C/W leaded
Soldering temperature, wavesoldering
only allowed at leads
T
sold
–
–
260
°C
1.6mm (0.063 in.) from case for 10s
Final Data Sheet
5
Rev.ꢀ2.0,ꢀꢀ2015-07-13
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPZ60R070P6
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
600
3.5
Typ.
–
Max.
–
Drain-source breakdown voltage
Gate threshold voltage
V
(BR)DSS
V
(GS)th
V
V
V
GS
=0V,ꢀ
I
D
=1mA
4.0
4.5
V
DS
=
V
GS
,ꢀ
I
D
=1.72mA
–
–
–
10
5
–
V
DS
=600,ꢀ
V
GS
=0V,ꢀ
T
j
=25°C
V
DS
=600,ꢀ
V
GS
=0V,ꢀ
T
j
=150°C
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
I
DSS
µ
A
nA
Ω
I
GSS
–
–
100
V
GS
=20V,ꢀ
V
DS
=0V
–
–
0.063 0.070
0.164
V
GS
=10V,ꢀ
I
D
=20.6A,ꢀ
T
j
=25°C
V
GS
=10V,ꢀ
I
D
=20.6A,ꢀ
T
j
=150°C
R
DS(on)
R
G
–
–
1
–
Ω
f
=1MHz,ꢀopenꢀdrain
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
Output capacitance
C
iss
–
–
4750
190
–
–
pF
pF
V
GS
=0V,ꢀ
V
DS
=100V,ꢀ
f
=1MHz
V
GS
=0V,ꢀ
V
DS
=100V,ꢀ
f
=1MHz
C
oss
Effective output capacitance,
energy related
1)
C
o(er)
C
o(tr)
t
d(on)
t
r
–
–
–
–
–
–
150
703
21
14
62
4
–
–
–
–
–
–
pF
pF
ns
ns
ns
ns
V
GS
=0V,ꢀ
V
DS
=0…400V
Effective output capacitance,
time related
2)
I
D
=constant,ꢀ
V
GS
=0V,ꢀ
V
DS
=0…400V
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=25.8A,
R
G
=1.7
Ω
;ꢀseeꢀtableꢀ9
Turn-on delay time
Rise time
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=25.8A,
R
G
=1.7
Ω
;ꢀseeꢀtableꢀ9
V
DD
=400V,ꢀ
V
GS
=13V,ꢀ
I
D
=25.8A,
R
G
=1.7
Ω
;ꢀseeꢀtableꢀ9
Turn-off delay time
Fall time
t
d(off)
t
f
V
DD
=400V,ꢀ
V
GS
=13ꢀV,ꢀ
I
D
=25.8A,
R
G
=1.7
Ω
;ꢀseeꢀtableꢀ9
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
Values
Typ.
30
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
–
–
–
–
–
–
–
–
nC
nC
nC
V
V
DD
=400V,ꢀ
I
D
=25.8A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=25.8A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=25.8A,ꢀ
V
GS
=0ꢀtoꢀ10V
V
DD
=400V,ꢀ
I
D
=25.8A,ꢀ
V
GS
=0ꢀtoꢀ10V
Q
gd
35
Q
g
100
6.1
Gate plateau voltage
V
plateau
1)
ꢀ
C
o(er)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀstoredꢀenergyꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
2)
ꢀ
C
o(tr)
ꢀisꢀaꢀfixedꢀcapacitanceꢀthatꢀgivesꢀtheꢀsameꢀchargingꢀtimeꢀasꢀ
C
oss
ꢀwhileꢀ
V
DS
ꢀisꢀrisingꢀfromꢀ0ꢀtoꢀ400V
Final Data Sheet
6
Rev.ꢀ2.0,ꢀꢀ2015-07-13
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPZ60R070P6
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiodeꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
Diode forward voltage
Reverse recovery time
V
SD
t
rr
–
0.9
–
V
V
GS
=0V,ꢀ
I
F
=25.8A,ꢀ
T
j
=25°C
V
R
=400V,ꢀ
I
F
=25.8A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
–
–
–
520
12
–
–
–
ns
V
R
=400V,ꢀ
I
F
=25.8A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Reverse recovery charge
Q
rr
I
rrm
µC
A
V
R
=400V,ꢀ
I
F
=25.8A,ꢀd
i
F
/d
t
=100A/µs;
see table 8
Peak reverse recovery current
44
Final Data Sheet
7
Rev.ꢀ2.0,ꢀꢀ2015-07-13
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPZ60R070P6
5ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀSafeꢀoperatingꢀarea
400
10
3
1 µs
350
300
250
200
150
100
50
10
2
10 µs
100 µs
10
1
1 ms
10 ms
10
0
DC
10
-1
10
-2
10
-3
0
0
25
50
75
100
125
150
10
0
10
1
10
2
10
3
T
C
ꢀ[°C]
V
DS
ꢀ[V]
P
tot
=f(
T
C
)
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
0
1 µs
10
2
10
1
10 µs
0.5
100 µs
10
-1
0.2
1 ms
0.1
10 ms
10
0
0.05
0.02
DC
10
-1
10
-2
10
-3
10
-2
0.01
single pulse
10
-3
10
0
10
1
10
2
10
3
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=80ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
ꢀ=f(
t
P
);ꢀparameter:ꢀ
D=t
p
/
T
Final Data Sheet
8
Rev.ꢀ2.0,ꢀꢀ2015-07-13
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPZ60R070P6
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀoutputꢀcharacteristics
160
150
140
130
120
110
100
90
100
20 V
20 V
95
90
85
80
75
70
65
60
55
50
45
40
35
30
25
20
15
10
5
10 V
8 V
10 V
8 V
7 V
80
7 V
70
6 V
60
50
40
5.5 V
30
6 V
20
5 V
5.5 V
5 V
10
4.5 V
4.5 V
0
0
0
5
10
15
20
0
5
10
15
20
V
DS
ꢀ[V]
V
DS
ꢀ[V]
I
D
=f(
V
DS
);ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
I
D
=f(
V
DS
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀdrain-sourceꢀon-stateꢀresistance
Diagramꢀ8:ꢀDrain-sourceꢀon-stateꢀresistance
0.50
0.20
0.45
0.40
0.35
0.15
7 V
5.5 V
0.30
0.25
0.20
0.15
0.10
0.10
6 V
6.5 V
typ
98%
10 V
20 V
0.05
0.00
0
10
20
30
40
50
60
70
80
-50
-25
0
25
50
75
100
125
150
I
D
ꢀ[A]
T
j
ꢀ[°C]
R
DS(on)
=f(
I
D
);ꢀ
T
j
=125ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
T
j
);ꢀ
I
D
=20.6ꢀA;ꢀ
V
GS
=10ꢀV
Final Data Sheet
9
Rev.ꢀ2.0,ꢀꢀ2015-07-13
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPZ60R070P6
Diagramꢀ9:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ10:ꢀTyp.ꢀgateꢀcharge
160
10
25 °C
9
8
140
120
100
80
120 V
480 V
7
6
5
4
3
2
1
0
150 °C
60
40
20
0
0
2
4
6
8
10
12
14
0
10 20 30 40 50 60 70 80 90
100 110
V
GS
ꢀ[V]
Q
gate
ꢀ[nC]
I
D
=f(
V
GS
);ꢀ
V
DS
=20V;ꢀparameter:ꢀ
T
j
V
GS
=f(
Q
gate
);ꢀ
I
D
=25.8ꢀAꢀpulsed;ꢀparameter:ꢀ
V
DD
Diagramꢀ11:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
Diagramꢀ12:ꢀAvalancheꢀenergy
10
2
1200
1100
1000
900
800
700
600
500
400
300
200
100
0
10
1
125 °C
25 °C
10
0
10
-1
0.0
0.5
1.0
1.5
2.0
25
50
75
100
125
150
V
SD
ꢀ[V]
T
j
ꢀ[°C]
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
E
AS
=f(
T
j
);ꢀ
I
D
=9.3ꢀA;ꢀ
V
DD
=50ꢀV
Final Data Sheet
10
Rev.ꢀ2.0,ꢀꢀ2015-07-13
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPZ60R070P6
Diagramꢀ13:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagramꢀ14:ꢀTyp.ꢀcapacitances
700
10
4
Ciss
680
660
640
620
600
580
560
540
520
10
3
Coss
10
2
10
1
Crss
10
0
-75 -50 -25
0
25
50
75 100
125 150 175
0
100
200
300
400
500
T
j
ꢀ[°C]
V
DS
ꢀ[V]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
Diagramꢀ15:ꢀTyp.ꢀCossꢀstoredꢀenergy
17
16
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
0
100
200
300
400
500
V
DS
ꢀ[V]
E
oss
=
f
(V
DS
)
Final Data Sheet
11
Rev.ꢀ2.0,ꢀꢀ2015-07-13
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPZ60R070P6
6ꢀꢀꢀꢀꢀTestꢀCircuits
Tableꢀ8ꢀꢀꢀꢀꢀDiodeꢀcharacteristics
Test circuit for diode characteristics
Diode recovery waveform
V,I
V
DS
R
g
1
V
D
S
(
p
ea
k
)
V
DS
t
rr
V
DS
I
F
t
F
t
S
d
I
F
/ dt
R
g
2
I
F
t
1
0
%
I
rrm
Q
F
Q
S
I
F
dI /
dt
rr
t
rr
=
t
F
+t
S
rr
I
rrm
Q
=
Q
F
+
Q
S
R
g
1 = R
g
2
Tableꢀ9ꢀꢀꢀꢀꢀswitchingꢀtimesꢀ(ss)
Switching times test circuit for inductive load
Switching times waveform
V
DS
90%
10%
V
DS
V
GS
V
GS
t
d(off)
t
f
t
d(on)
t
on
t
r
t
off
Tableꢀ10ꢀꢀꢀꢀꢀUnclampedꢀinductiveꢀloadꢀ(ss)
Unclamped inductive load test circuit
Unclamped inductive waveform
V
(BR)DS
I
D
V
DS
V
DS
V
DS
I
D
Final Data Sheet
12
Rev.ꢀ2.0,ꢀꢀ2015-07-13
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPZ60R070P6
7ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TOꢀ247-4
Final Data Sheet
13
Rev.ꢀ2.0,ꢀꢀ2015-07-13
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPZ60R070P6
8ꢀꢀꢀꢀꢀAppendixꢀA
Tableꢀ11ꢀꢀꢀꢀꢀRelatedꢀLinks
Final Data Sheet
14
Rev.ꢀ2.0,ꢀꢀ2015-07-13
600VꢀCoolMOS™ꢀP6ꢀPowerꢀTransistor
IPZ60R070P6
RevisionꢀHistory
IPZ60R070P6
Revision:ꢀ2015-07-13,ꢀRev.ꢀ2.0
Previous Revision
Revision Date
2.0
Subjects (major changes since last revision)
Release of final version
2015-07-13
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aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
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Final Data Sheet
15
Rev.ꢀ2.0,ꢀꢀ2015-07-13
