Infineon-Technologies-IRF1010ZPBF
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PD – 95361A
IRF1010ZPbF
IRF1010ZSPbF
IRF1010ZLPbF
Features
l
l
l
l
l
l
Advanced Process Technology
HEXFET
®
Power MOSFET
Ultr
a
L
o
w
O
n-Resistance
175°
C
O
peratin
g
T
emperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
D
V
DSS
= 55V
R
DS(on)
= 7.5m
Ω
G
Description
I
D
= 75A
Thi
s
H
EXFET
®
Powe
r
M
OSFE
T
u
tilize
s
t
h
e
l
atest
processing techniques to achieve extremely low
on-resistanc
e
p
e
r
s
ilico
n
a
rea
.
A
dditiona
l
f
eatures
of this design
are a 175°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating . These features
combin
e
t
o
m
ak
e
t
hi
s
d
esig
n
a
n
e
xtremel
y
e
fficient
and reliable device for use in a wide variety of
applications.
S
D
2
Pak
IRF1010ZSPbF IRF1010ZLPbF
TO-262
TO-220AB
IRF1010ZPbF
Absolute Maximum Ratings
Parameter
Max.
94
Units
(Silicon Limited)
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
I
I
I
@ T
= 25°C
C
D
D
D
@ T
= 100°C
C
66
A
(Package Limited)
@ T
= 25°C
C
75
360
140
DM
P
@T =
25°C
Power Dissipation
C
W
D
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
0.90
± 20
W/°C
V
V
GS
E
AS (Thermally limited)
130
180
mJ
Single Pulse Avalanche Energy Tested Value
Avalanche Current
E
AS
(Tested )
I
AR
See Fig.12a, 12b, 15, 16
A
Repetitive Avalanche Energy
E
AR
mJ
T
J
Operating Junction and
-55 to
+ 175
T
Storage Temperature Range
°C
STG
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf
in (1.1N m)
Thermal Resistance
Parameter
Typ.
–––
Max.
1.11
–––
62
Units
°C/W
R
θ
JC
Junction-to-Case
R
θ
R
θ
R
θ
0.50
–––
CS
JA
JA
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
–––
40
Junction-to-Ambient (PCB Mount)
1
07/06/10
IRF1010Z/S/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
Units
55 –––
–––
Conditions
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
V
∆
∆
V
(BR)DSS
/ T
J
Breakdown Voltage Temp. Coefficient
––– 0.049 –––
V/°C Reference
to 25°C, I
D
= 1mA
Ω
m
R
DS(on)
V
GS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
5.8
–––
–––
–––
–––
–––
–––
63
7.5
4.0
V
GS
= 10V, I
D
= 75A
V
V
DS
= V
GS
, I
D
= 250µA
gfs
Forward Transconductance
33
–––
20
S
V
DS
= 25V, I
D
= 75A
I
DSS
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
µA V
DS
= 55V, V
GS
= 0V
250
200
-200
95
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA V
GS
= 20V
V
GS
= -20V
I
D
= 75A
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
19
–––
–––
–––
–––
–––
–––
–––
nC V
DS
= 44V
V
GS
= 10V
V
DD
= 28V
I
D
= 75A
24
18
Rise Time
150
36
t
d(off)
t
f
Ω
ns R
G
= 6.8
Turn-Off Delay Time
Fall Time
92
V
GS
= 10V
L
D
Internal Drain Inductance
4.5
Between lead,
nH 6mm
(0.25in.)
from package
L
S
Internal Source Inductance
–––
7.5
–––
and center of die contact
C
iss
Input Capacitance
––– 2840 –––
V
GS
= 0V
C
oss
C
rss
C
oss
C
oss
Output Capacitance
–––
–––
420
250
–––
–––
V
DS
= 25V
Reverse Transfer Capacitance
Output Capacitance
pF ƒ
= 1.0MHz
––– 1630 –––
V
GS
= 0V,
V
DS
= 1.0V,
ƒ = 1.0MHz
Output Capacitance
–––
–––
360
560
–––
–––
V
GS
= 0V,
V
DS
= 44V,
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 44V
C
oss
eff.
Effective Output Capacitance
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
I
Continuous Source Current
–––
–––
75
MOSFET symbol
S
(Body Diode)
A
showing the
I
Pulsed Source Current
–––
–––
360
integral reverse
SM
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
22
1.3
33
23
V
T =
25°C, I
= 75A, V
= 0V
SD
J
S
GS
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
ns T
= 25°C, I
= 75A, V
DD
= 25V
J F
rr
di/dt = 100A/µs
Q
t
15
nC
rr
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
on
2
IRF1010Z/S/LPbF
1000
100
10
1000
100
10
V
GS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
V
GS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
TOP
TOP
BOTTOM 4.5V
BOTTOM 4.5V
4.5V
4.5V
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
1000
T
= 25°C
T =
175°C
J
J
80
60
40
20
0
T
= 175°C
J
100
10
1
T
= 25°C
J
V
= 10V
DS
20µs PULSE WIDTH
V
= 25V
20µs PULSE WIDTH
DS
4.0
5.0
6.0
7.0
8.0
9.0
10.0
11.0
0
20
40
60
80
V
, Gate-to-Source Voltage (V)
I
Drain-to-Source Current (A)
GS
D,
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
Vs. Drain Current
3
IRF1010Z/S/LPbF
20
16
12
8
5000
V
= 0V,
= C
f = 1 MHZ
I =
75A
GS
D
C
C
C
+ C
, C
SHORTED
ds
iss
gs
gd
V
= 44V
DS
VDS= 28V
= C
rss
oss
gd
4000
3000
2000
1000
0
= C
+ C
ds
gd
Ciss
4
Coss
Crss
0
0
20
40
60
80
100
1
10
, Drain-to-Source Voltage (V)
100
Q
Total Gate Charge (nC)
G
V
DS
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.0
10000
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100.0
10.0
1.0
T
= 175°C
J
100µsec
T
= 25°C
J
1msec
1
Tc = 25°C
Tj = 175°C
10msec
V
= 0V
1.8
Single Pulse
GS
0.1
0.1
1
10
100
1000
0.2
0.6
1.0
1.4
V
, Drain-toSource Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRF1010Z/S/LPbF
100
80
60
40
20
0
2.5
2.0
1.5
1.0
0.5
I
= 75A
LIMITED BY PACKAGE
D
V
= 10V
GS
25
50
75
100
125
150
175
-60 -40 -20
T
0
20 40 60 80
100 120 140 160 180
T
, Case Temperature (°C)
C
, Junction Temperature (°C)
J
Fig 10.
Normalized On-Resistance
Fig 9.
Maximum Drain Current Vs.
Vs. Temperature
Case Temperature
10
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
0.02
0.01
Notes:
SINGLE PULSE
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
( THERMAL RESPONSE )
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRF1010Z/S/LPbF
250
200
150
100
50
15V
I
D
31A
53A
TOP
BOTTOM 75A
DRIVER
L
V
DS
D.U.T
AS
R
+
–
G
V
DD
I
A
2
V
0
G
V
S
Ω
0.01
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
0
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
I
AS
Fig 12c.
Maximum Avalanche Energy
Fig 12b.
Unclamped Inductive Waveforms
Vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
3.0
2.0
1.0
V
G
I
= 250µA
D
Charge
Fig 13a.
Basic Gate Charge Waveform
L
VCC
DUT
0
1K
-75 -50 -25
0
25 50 75
100 125 150 175
T ,
Temperature ( °C )
J
Fig 14.
Threshold Voltage Vs. Temperature
Fig 13b.
Gate Charge Test Circuit
6
IRF1010Z/S/LPbF
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
∆
Tj = 25°C due to
avalanche losses. Note: In no
case should Tj be allowed to
exceed Tjmax
0.01
0.05
0.10
1
0.1
1.0E-08
1.0E-07
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Typical Avalanche Current Vs.Pulsewidth
140
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
TOP
BOTTOM 10%
Duty Cycle
= 75A
Single Pulse
120
100
80
60
40
20
0
I
D
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
∆
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
25
50
75
100
125
150
175
D = Duty cycle in avalanche =
t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
Starting T
, Junction Temperature (°C)
J
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
D
T/ Z
thJC
Fig 16.
Maximum Avalanche Energy
I
av
= 2
D
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Vs. Temperature
7
IRF1010Z/S/LPbF
Driver Gate Drive
P.W.
P
.
W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
–
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/dt controlled by R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 17.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 18a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b.
Switching Time Waveforms
8
IRF1010Z/S/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
E
X
A
M
P
LE: THIS
IS
A
N
I
RF1010
P
A
R
T NU
M
B
ER
L
O
T CODE
1
789
A
S
SE
M
B
LED
O
N W
W
1
9, 2000
IN
T
HE
A
S
SE
M
B
LY LINE “
C
”
IN
T
ER
N
A
T
I
ON
A
L
RE
C
T
IFIER
L
O
GO
D
A
T E
CODE
Y
E
A
R 0 =
2000
W
E
E K
1
9
Note: “
P
” in
a
s
s
e
mbly
l
in
e
p
o
s
i
t
ion
i
n
dicates “
L
e
ad
–
F
r
e
e”
AS S E M
B
L Y
L
O
T CODE
LINE C
Notes:
1. Fo
r
a
n
A
utomotiv
e
Q
ualifie
d
v
ersio
n
o
f
t
hi
s
p
ar
t
p
leas
e
s
e
e
h
ttp://www.irf.com/product-info/datasheets/data/auirf1010z.pdf
9
IRF1010Z/S/LPbF
D
2
Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D
2
Pak (TO-263AB) Part Marking Information
T
H
IS IS
A
N
I
RF
5
30S WI
T
H
P
A
R
T NUMBER
L
O
T CODE 8024
IN
T
ER
N
A
T
I
O
NAL
RE
C
T
I
F
I
E
R
L
O
GO
AS S E MB L E D ON WW 0
2
, 2000
IN
T
H
E
A
S
SE
M
B
LY LINE “L”
F
5
30S
D
A
T E
CODE
Y
E
A
R 0 =
2000
W
E
EK 02
AS S E MB L Y
L
O
T CODE
LINE L
OR
P
A
R
T NU
M
B
ER
INTERN
A
T
I
ON
A
L
RE
C
T
IF
I
ER
L
O
GO
F
5
30S
DAT E
CODE
P =
D
E
SI
G
NA
T
ES LE
A
D –
F
REE
PR
O
D
U
C
T
(
O
P
T
I
ON
A
L
)
YE
A
R 0 =
2
0
00
A
S
SE
M
B
LY
L
O
T CODE
W
E
EK 02
A =
A
S S
E
M
B
LY S IT E
C
O
DE
Notes:
1. Fo
r
a
n
A
utomotiv
e
Q
ualifie
d
v
ersio
n
o
f
t
hi
s
p
ar
t
p
leas
e
s
e
e
h
ttp://www.irf.com/product-info/datasheets/data/auirf1010z.pdf
10
IRF1010Z/S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
E
X
AM
P
LE: T
HIS IS
A
N
I
RL3103L
L
O
T CODE 1789
PART NU
M
B
ER
IN
T
ER
N
A
T
I
O
NAL
A
S
SE
M
B
LED
O
N WW 1
9
, 1997
RE
C
T
I
FIER
IN THE
A
S
SE
M
B
LY LINE “
C
”
L
O
GO
DA
T
E
C
ODE
Y
E
A
R 7 =
1
997
W
E
EK
1
9
A
S
SE
M
B
LY
L
O
T CODE
LINE C
OR
P
A
R
T NU
M
B
ER
IN
T
E
RN
A
T
I
O
NAL
RE
C
T
IFIER
L
O
GO
DA
T
E
C
ODE
P =
DE S
I
G
NAT E S
L E AD
–
F R E E
PR
O
D
U
C
T (O
P
TI
O
NA
L
)
Y
E
A
R 7 =
1
997
AS S E M
B
L Y
L
O
T CODE
W
E
EK
1
9
A=
A
S
SE
M
B
LY
SITE
C
ODE
Notes:
1. Fo
r
a
n
A
utomotiv
e
Q
ualifie
d
v
ersio
n
o
f
t
hi
s
p
ar
t
p
leas
e
s
e
e
h
ttp://www.irf.com/product-info/datasheets/data/auirf1010z.pdf
11
IRF1010Z/S/LPbF
D
2
Pak
T
a
pe & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4
.
7
2 (.136)
4
.
5
2 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
TO-220AB package
is not recommended for Surface Mount Application.
Notes:
ꢀ
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
Repetitive rating;
pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L = 0.05mH
This value determined from sample failure population. 100%
tested to this value in production.
R
G
= 25
Ω
, I
AS
= 75A, V
GS
=10V. Part not
recommended for use above this value.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
C
oss
eff. is a fixed capacitance that gives the
same charging time as C
oss
while V
DS
is rising
This is only applied to TO-220AB pakcage.
This is applied to D
2
Pak, when mounted on 1″ square PCB (FR-
4 or G-10 Material).
For recommended footprint and soldering
techniques refer to application note #AN-994.
from 0 to 80% V
DSS
.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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