Infineon-Technologies-IRF150P220
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IRF150P220
MOSFET
PG-TOꢀ247-3
StrongIRFETª
Features
•ꢀVeryꢀlowꢀR
DS(on)
•ꢀExcellentꢀgateꢀchargeꢀxꢀR
DS(on)
ꢀ(FOM)
•ꢀOptimizedꢀQ
rr
•ꢀ175°Cꢀoperatingꢀtemperature
•ꢀProductꢀvalidationꢀaccordingꢀtoꢀJEDECꢀstandard
•ꢀOptimizedꢀforꢀbroadestꢀavailabilityꢀfromꢀdistributionꢀpartners
1
2
3
Benefits
•ꢀReducedꢀconductionꢀlosses
•ꢀIdealꢀforꢀhighꢀswitchingꢀfrequency
•ꢀLowerꢀovershootꢀvoltage
Drain
Pin 2
•ꢀIncreasedꢀreliabilityꢀversusꢀ150°Cꢀratedꢀparts
•ꢀHalogen-freeꢀaccordingꢀtoꢀIEC61249-2-21
Gate
Pin 1
Source
Pin 3
Tableꢀ1ꢀꢀꢀꢀꢀKeyꢀPerformanceꢀParameters
Parameter
Value
150
2.3
Unit
V
DS
V
R
DS(on),typ
m
Ω
m
Ω
A
R
DS(on),max
I
D(SiliconꢀLimited)
I
D(PackageꢀLimited)
Q
G
(0V..10V)
2.7
316
203
160
A
nC
Typeꢀ/ꢀOrderingꢀCode
Package
Marking
RelatedꢀLinks
IRF150P220
PG-TO247-3
IRF150P220
–
Final Data Sheet
1
Rev.ꢀ2.1,ꢀꢀ2020-02-03
StrongIRFETª
IRF150P220
TableꢀofꢀContents
Description .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3
Thermal characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
4
Electrical characteristics diagrams
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Package Outlines
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10
Revision History
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Trademarks .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Disclaimer .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
11
Final Data Sheet
2
Rev.ꢀ2.1,ꢀꢀ2020-02-03
StrongIRFETª
IRF150P220
1ꢀꢀꢀꢀꢀMaximumꢀratings
atꢀ
T
A
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ2ꢀꢀꢀꢀꢀMaximumꢀratings
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°C
V
GS
=10ꢀV,ꢀ
T
C
=25ꢀ°Cꢀ(siliconꢀlimited)
–
–
–
–
–
–
203
316
224
Continuous drain current
I
D
A
V
GS
=10ꢀV,ꢀ
T
C
=100ꢀ°Cꢀ(silicon
limited)
1)
Pulsed drain current
1)
Avalanche energy, single pulse
2)
I
D,pulse
E
AS
–
–
–
–
812
834
20
A
T
C
=25ꢀ°C
–
mJ
V
I
D
=100ꢀA,ꢀ
R
GS
=50ꢀ
Ω
Gate source voltage
V
GS
-20
–
–
–
–
–
556
3.8
T
C
=25ꢀ°C
Power dissipation
P
tot
W
T
A
=25ꢀ°C,ꢀ
R
THJA
=40ꢀ°C/W
3)
IEC climatic category; DIN IEC 68-1:
55/175/56
Operating and storage temperature
T
j
,ꢀ
T
stg
-55
–
175
°C
2ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Tableꢀ3ꢀꢀꢀꢀꢀThermalꢀcharacteristics
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
0.27
40
Thermal resistance, junction – case
4)
R
thJC
–
–
–
–
°C/W –
°C/W –
°C/W –
Thermal resistance, junction -Ambient
R
thJA
Case-to-Sink, Flat Greased Surface
R
thCS
–
0.24
–
1)
See Diagram 3 for more detailed information
2)
See Diagram 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
4)
R
thJC
is measured at T
J
approximately 90°C.
Final Data Sheet
3
Rev.ꢀ2.1,ꢀꢀ2020-02-03
StrongIRFETª
IRF150P220
3ꢀꢀꢀꢀꢀElectricalꢀcharacteristics
atꢀ
T
j
=25ꢀ°C,ꢀunlessꢀotherwiseꢀspecified
Tableꢀ4ꢀꢀꢀꢀꢀStaticꢀcharacteristics
Values
Typ.
–
Parameter
Symbol
V
(BR)DSS
Unit Noteꢀ/ꢀTestꢀCondition
V
GS
=0ꢀV,ꢀ
I
D
=1ꢀmA
mV/°
C
I
D
=2ꢀmA,ꢀreferencedꢀtoꢀ25ꢀ°C
Min.
Max.
Drain-source breakdown voltage
150
–
V
Breakdown voltage temperature
coefficient
d
V
(BR)DSSꢀ
/d
T
j
–
V
GS(th)
I
DSS
50
–
–
Gate threshold voltage
3
4.6
V
V
DS
=
V
GS
,ꢀ
I
D
=265ꢀµA
–
–
–
–
1
100
V
DS
=120ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=25ꢀ°C
V
DS
=120ꢀV,ꢀ
V
GS
=0ꢀV,ꢀ
T
j
=125ꢀ°C
Zero gate voltage drain current
µA
nA
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
1)
I
GSS
R
DS(on)
R
G
–
–
–
–
–
100
V
GS
=20ꢀV,ꢀ
V
DS
=0ꢀV
2.3
0.5
200
2.7
m
Ω
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA
–
–
Ω
–
Transconductance
g
fs
S
|
V
DS
|
≥
2|
I
D
|
R
DS(on)max
,ꢀ
I
D
=100ꢀA
Tableꢀ5ꢀꢀꢀꢀꢀDynamicꢀcharacteristics
Values
Typ.
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Input capacitance
1)
Output capacitance
1)
Reverse transfer capacitance
1)
C
iss
C
oss
C
rss
–
–
–
12000 –
pF
pF
pF
V
GS
=0ꢀV,ꢀ
V
DS
=75ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=75ꢀV,ꢀ
f
=1ꢀMHz
V
GS
=0ꢀV,ꢀ
V
DS
=75ꢀV,ꢀ
f
=1ꢀMHz
3000
65
–
–
V
DD
=75ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
=2.7ꢀ
Ω
Turn-on delay time
Rise time
t
d(on)
t
r
t
d(off)
t
f
–
–
–
–
33
–
–
–
–
ns
ns
ns
ns
V
DD
=75ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
=2.7ꢀ
Ω
100
50
V
DD
=75ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
=2.7ꢀ
Ω
Turn-off delay time
Fall time
V
DD
=75ꢀV,ꢀ
V
GS
=10ꢀV,ꢀ
I
D
=100ꢀA,
R
G,ext
=2.7ꢀ
Ω
85
Tableꢀ6ꢀꢀꢀꢀꢀGateꢀchargeꢀcharacteristics
2)
ꢀ
Values
Typ.
65
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Max.
Gate to source charge
Gate charge at threshold
Gate to drain charge
1)
Switching charge
Q
gs
–
–
–
–
–
–
–
–
–
nC
nC
nC
nC
nC
V
V
DD
=75ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=75ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=75ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=75ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=75ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DD
=75ꢀV,ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
V
DS
=0.1ꢀV,ꢀ
V
GS
=0ꢀtoꢀ10ꢀV
Q
g(th)
Q
gd
46
–
32
–
Q
sw
51
–
Gate charge total
1)
Q
g
160
5.4
200
Gate plateau voltage
Gate charge total, sync. FET
Output charge
2)
V
plateau
Q
g(sync)
Q
oss
–
–
–
128
451
nC
nC
V
DD
=75ꢀV,ꢀ
V
GS
=0ꢀV
1)
Defined by design. Not subject to production test.
2)
See
″
Gate charge waveforms
″
for parameter definition
Final Data Sheet
4
Rev.ꢀ2.1,ꢀꢀ2020-02-03
StrongIRFETª
IRF150P220
Tableꢀ7ꢀꢀꢀꢀꢀReverseꢀdiode
Values
Parameter
Symbol
Unit Noteꢀ/ꢀTestꢀCondition
Min.
Typ.
Max.
203
812
1.1
–
Diode continuous forward current
Diode pulse current
I
S
–
–
–
–
–
–
A
T
C
=25ꢀ°C
I
S,pulse
V
SD
t
rr
–
A
T
C
=25ꢀ°C
Diode forward voltage
–
V
V
GS
=0ꢀV,ꢀ
I
F
=100ꢀA,ꢀ
T
j
=25ꢀ°C
V
R
=128ꢀV,ꢀ
I
F
=100ꢀA,ꢀd
i
F
/d
t
=100ꢀA/µs
V
R
=128ꢀV,ꢀ
I
F
=100ꢀA,ꢀd
i
F
/d
t
=100ꢀA/µs
Reverse recovery time
1)
Reverse recovery charge
1)
110
250
ns
nC
Q
rr
–
1)
Defined by design. Not subject to production test.
Final Data Sheet
5
Rev.ꢀ2.1,ꢀꢀ2020-02-03
StrongIRFETª
IRF150P220
4ꢀꢀꢀꢀꢀElectricalꢀcharacteristicsꢀdiagrams
Diagramꢀ1:ꢀPowerꢀdissipation
Diagramꢀ2:ꢀDrainꢀcurrent
600
400
package limit
silicon limit
350
500
400
300
200
100
0
300
250
200
150
100
50
0
0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
T
C
ꢀ[°C]
T
C
ꢀ[°C]
P
tot
=f(
T
C
)
I
D
=f(
T
C
);ꢀ
V
GS
≥
10ꢀV
Diagramꢀ3:ꢀSafeꢀoperatingꢀarea
Diagramꢀ4:ꢀMax.ꢀtransientꢀthermalꢀimpedance
10
3
10
1
10 µs
single pulse
0.01
100 µs
0.02
0.05
0.1
0.2
0.5
10
0
10
2
10
1
1 ms
10 ms
DC
10
-1
10
-2
10
-3
10
-4
10
-5
10
0
10
-1
10
-2
10
-1
10
0
10
1
10
2
10
3
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
V
DS
ꢀ[V]
t
p
ꢀ[s]
I
D
=f(
V
DS
);ꢀ
T
C
=25ꢀ°C;ꢀ
D
=0;ꢀparameter:ꢀ
t
p
Z
thJC
=f(
t
p
);ꢀparameter:ꢀ
D
=
t
p
/
T
Final Data Sheet
6
Rev.ꢀ2.1,ꢀꢀ2020-02-03
StrongIRFETª
IRF150P220
Diagramꢀ5:ꢀTyp.ꢀoutputꢀcharacteristics
Diagramꢀ6:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
850
7
5 V
5.5 V
6 V
7 V
765
6
8 V
10 V
680
7 V
12 V
5
595
6 V
510
425
340
255
170
85
4
3
2
1
0
8 V
10 V
12 V
0
0
1
2
3
4
5
0
75 150
225 300 375 450 525 600 675 750 825
V
DS
ꢀ[V]
I
D
ꢀ[A]
I
D
=f(
V
DS
),ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
R
DS(on)
=f(
I
D
),ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
GS
Diagramꢀ7:ꢀTyp.ꢀtransferꢀcharacteristics
Diagramꢀ8:ꢀTyp.ꢀdrain-sourceꢀonꢀresistance
850
10
765
680
595
510
425
340
255
170
8
6
125 °C
4
2
0
25 °C
85
0
175 °C
25 °C
0
2
4
6
8
10
2
4
6
8
10
12
14
16
18
20
V
GS
ꢀ[V]
V
GS
ꢀ[V]
I
D
=f(
V
GS
),ꢀ|
V
DS
|>2|
I
D
|
R
DS(on)max
;ꢀparameter:ꢀ
T
j
R
DS(on)
=f(
V
GS
),ꢀ
I
D
=100ꢀA;ꢀparameter:ꢀ
T
j
Final Data Sheet
7
Rev.ꢀ2.1,ꢀꢀ2020-02-03
StrongIRFETª
IRF150P220
Diagramꢀ9:ꢀNormalizedꢀdrain-sourceꢀonꢀresistance
Diagramꢀ10:ꢀTyp.ꢀgateꢀthresholdꢀvoltage
2.4
5
2.0
1.6
1.2
0.8
0.4
4
3
2
1
0
2650 µA
265 µA
-75
-25
25
75
125
175
-75
-25
25
75
125
175
T
j
ꢀ[°C]
T
j
ꢀ[°C]
R
DS(on)
=f(
T
j
),ꢀ
I
D
=100ꢀA,ꢀ
V
GS
=10ꢀV
V
GS(th
=f(
T
j
),ꢀ
V
GS
=
V
DS
;ꢀparameter:ꢀ
I
D
Diagramꢀ11:ꢀTyp.ꢀcapacitances
Diagramꢀ12:ꢀForwardꢀcharacteristicsꢀofꢀreverseꢀdiode
10
5
10
3
25 °C
175 °C
Ciss
10
4
10
3
10
2
10
1
10
2
10
1
10
0
Coss
Crss
0
25
50
75
100
125
150
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
V
DS
ꢀ[V]
V
SD
ꢀ[V]
C
=f(
V
DS
);ꢀ
V
GS
=0ꢀV;ꢀ
f
=1ꢀMHz
I
F
=f(
V
SD
);ꢀparameter:ꢀ
T
j
Final Data Sheet
8
Rev.ꢀ2.1,ꢀꢀ2020-02-03
StrongIRFETª
IRF150P220
Diagramꢀ13:ꢀAvalancheꢀcharacteristics
Diagramꢀ14:ꢀTyp.ꢀgateꢀcharge
10
3
14
30 V
75 V
120 V
12
10
2
10
1
10
0
10
-1
10
8
25 °C
100 °C
6
150 °C
4
2
0
10
-1
10
0
10
1
10
2
10
3
0
50
100
150
200
t
AV
ꢀ[µs]
Q
gate
ꢀ[nC]
I
AS
=f(
t
AV
);ꢀ
R
GS
=25ꢀ
Ω
;ꢀparameter:ꢀ
T
j,start
V
GS
=f(
Q
gate
),ꢀ
I
D
=100ꢀAꢀpulsed,ꢀ
T
j
=25ꢀ°C;ꢀparameter:ꢀ
V
DD
Diagramꢀ15:ꢀDrain-sourceꢀbreakdownꢀvoltage
Diagram Gate charge waveforms
173
171
169
167
165
163
161
159
157
155
-75
-25
25
75
125
175
T
j
ꢀ[°C]
V
BR(DSS)
=f(
T
j
);ꢀ
I
D
=1ꢀmA
Final Data Sheet
9
Rev.ꢀ2.1,ꢀꢀ2020-02-03
StrongIRFETª
IRF150P220
5ꢀꢀꢀꢀꢀPackageꢀOutlines
Figureꢀ1ꢀꢀꢀꢀꢀOutlineꢀPG-TO247-3,ꢀdimensionsꢀinꢀmm/inches
Final Data Sheet
10
Rev.ꢀ2.1,ꢀꢀ2020-02-03
StrongIRFETª
IRF150P220
RevisionꢀHistory
IRF150P220
Revision:ꢀ2020-02-03,ꢀRev.ꢀ2.1
Previous Revision
Revision Date
Subjects (major changes since last revision)
1.0
2.0
2.1
Release of preliminary version
2018-09-21
2018-09-21
2020-02-03
Release of final version
Update from IR MOSFT/StrongIRFET
TM
to StrongIRFET
TM
Trademarks
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Theꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀshallꢀinꢀnoꢀeventꢀbeꢀregardedꢀasꢀaꢀguaranteeꢀofꢀconditionsꢀorꢀcharacteristicsꢀ
(“Beschaffenheitsgarantie”)ꢀ.
Withꢀrespectꢀtoꢀanyꢀexamples,ꢀhintsꢀorꢀanyꢀtypicalꢀvaluesꢀstatedꢀhereinꢀand/orꢀanyꢀinformationꢀregardingꢀtheꢀapplicationꢀofꢀthe
product,ꢀInfineonꢀTechnologiesꢀherebyꢀdisclaimsꢀanyꢀandꢀallꢀwarrantiesꢀandꢀliabilitiesꢀofꢀanyꢀkind,ꢀincludingꢀwithoutꢀlimitation
warrantiesꢀofꢀnon-infringementꢀofꢀintellectualꢀpropertyꢀrightsꢀofꢀanyꢀthirdꢀparty.
Inꢀaddition,ꢀanyꢀinformationꢀgivenꢀinꢀthisꢀdocumentꢀisꢀsubjectꢀtoꢀcustomer’sꢀcomplianceꢀwithꢀitsꢀobligationsꢀstatedꢀinꢀthis
documentꢀandꢀanyꢀapplicableꢀlegalꢀrequirements,ꢀnormsꢀandꢀstandardsꢀconcerningꢀcustomer’sꢀproductsꢀandꢀanyꢀuseꢀofꢀthe
productꢀofꢀInfineonꢀTechnologiesꢀinꢀcustomer’sꢀapplications.
Theꢀdataꢀcontainedꢀinꢀthisꢀdocumentꢀisꢀexclusivelyꢀintendedꢀforꢀtechnicallyꢀtrainedꢀstaff.ꢀItꢀisꢀtheꢀresponsibilityꢀofꢀcustomer’s
technicalꢀdepartmentsꢀtoꢀevaluateꢀtheꢀsuitabilityꢀofꢀtheꢀproductꢀforꢀtheꢀintendedꢀapplicationꢀandꢀtheꢀcompletenessꢀofꢀtheꢀproduct
informationꢀgivenꢀinꢀthisꢀdocumentꢀwithꢀrespectꢀtoꢀsuchꢀapplication.
Information
Forꢀfurtherꢀinformationꢀonꢀtechnology,ꢀdeliveryꢀtermsꢀandꢀconditionsꢀandꢀpricesꢀpleaseꢀcontactꢀyourꢀnearestꢀInfineon
TechnologiesꢀOfficeꢀ(www.infineon.com).
Warnings
Dueꢀtoꢀtechnicalꢀrequirements,ꢀcomponentsꢀmayꢀcontainꢀdangerousꢀsubstances.ꢀForꢀinformationꢀonꢀtheꢀtypesꢀinꢀquestion,
pleaseꢀcontactꢀtheꢀnearestꢀInfineonꢀTechnologiesꢀOffice.
TheꢀInfineonꢀTechnologiesꢀcomponentꢀdescribedꢀinꢀthisꢀDataꢀSheetꢀmayꢀbeꢀusedꢀinꢀlife-supportꢀdevicesꢀorꢀsystemsꢀand/or
automotive,ꢀaviationꢀandꢀaerospaceꢀapplicationsꢀorꢀsystemsꢀonlyꢀwithꢀtheꢀexpressꢀwrittenꢀapprovalꢀofꢀInfineonꢀTechnologies,ꢀifꢀa
failureꢀofꢀsuchꢀcomponentsꢀcanꢀreasonablyꢀbeꢀexpectedꢀtoꢀcauseꢀtheꢀfailureꢀofꢀthatꢀlife-support,ꢀautomotive,ꢀaviationꢀand
aerospaceꢀdeviceꢀorꢀsystemꢀorꢀtoꢀaffectꢀtheꢀsafetyꢀorꢀeffectivenessꢀofꢀthatꢀdeviceꢀorꢀsystem.ꢀLifeꢀsupportꢀdevicesꢀorꢀsystemsꢀare
intendedꢀtoꢀbeꢀimplantedꢀinꢀtheꢀhumanꢀbodyꢀorꢀtoꢀsupportꢀand/orꢀmaintainꢀandꢀsustainꢀand/orꢀprotectꢀhumanꢀlife.ꢀIfꢀtheyꢀfail,ꢀitꢀis
reasonableꢀtoꢀassumeꢀthatꢀtheꢀhealthꢀofꢀtheꢀuserꢀorꢀotherꢀpersonsꢀmayꢀbeꢀendangered.
Final Data Sheet
11
Rev.ꢀ2.1,ꢀꢀ2020-02-03
