Infineon-Technologies-IRF2804STRLPBF
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PD – 95332B
IRF2804PbF
IRF2804SPbF
IRF2804LPbF
Features
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Ultr
a
L
o
w
O
n-Resistance
175°
C
O
peratin
g
T
emperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
D
V
DSS
= 40V
R
DS(on)
= 2.0m
Ω
G
I
D
= 75A
S
Description
Thi
s
H
EXFET
®
Powe
r
M
OSFE
T
u
tilize
s
t
h
e
l
atest
processing techniques to achieve extremely low
on-resistanc
e
p
e
r
s
ilico
n
a
rea. Additiona
l
f
eatures
of this design are a 175°C junction operating
temperature, fast switching speed and improved
repetitiv
e
a
valanch
e
r
ating
.
T
hes
e
f
eature
s
c
ombine
to make this design an extremely efficient and
reliable device for use in a wide variety of other
applications.
D
2
Pak
IRF2804SPbF IRF2804LPbF
TO-262
TO-220AB
IRF2804PbF
Absolute Maximum Ratings
Parameter
Max.
270
190
75
Units
A
I
I
I
I
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
D
D
D
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
(Package Limited)
Continuous Drain Current, V
GS
@ 10V
1080
300
Pulsed Drain Current
DM
P
@T
C
= 25°C
Maximum Power Dissipation
W
D
Linear Derating Factor
Gate-to-Source Voltage
2.0
± 20
W/°C
V
V
GS
E
AS
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
540
1160
mJ
E
AS
(tested)
Avalanche Current
I
AR
E
AR
See Fig.12a,12b,15,16
A
Repetitive Avalanche Energy
mJ
°C
T
J
Operating Junction and
-55 to
+ 175
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.50
–––
62
Units
°C/W
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
0.50
–––
Junction-to-Ambient
–––
40
Junction-to-Ambient (PCB Mount, steady state)
HEXFET
®
is a registered trademark of International Rectifier.
1
05/12/10
IRF2804/S/LPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
Units
40 –––
–––
Conditions
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
V
∆Β
V
DSS
/
∆
T
J
R
DS(on)
SMD
Breakdown Voltage Temp. Coefficient
––– 0.031 –––
V/°C Reference
to 25°C, I
D
= 1mA
Static Drain-to-Source On-Resistance
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
–––
2.0
1.5
1.8
–––
–––
–––
–––
–––
–––
160
41
2.0
2.3
V
GS
= 10V, I
D
= 75A
V
GS
= 10V, I
D
= 75A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 10V, I
D
= 75A
Ω
m
R
DS(on)
TO-220
V
GS(th)
4.0
V
gfs
I
DSS
Forward Transconductance
130
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
20
S
Drain-to-Source Leakage Current
µA V
DS
= 40V, V
GS
= 0V
250
200
-200
240
62
V
DS
= 40V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA V
GS
= 20V
V
GS
= -20V
Q
g
Q
gs
Q
gd
t
d(on)
t
r
nC I
D
= 75A
V
DS
= 32V
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
66
99
V
GS
= 10V
DD
= 20V
13
–––
–––
–––
–––
–––
ns
V
Rise Time
120
130
130
4.5
I
D
= 75A
t
d(off)
t
f
Turn-Off Delay Time
R
G
= 2.5
Ω
V
GS
= 10V
Fall Time
L
D
D
S
Internal Drain Inductance
nH Between
lead,
6mm (0.25in.)
from package
G
L
S
Internal Source Inductance
–––
7.5
–––
and center of die contact
GS
= 0V
DS
= 25V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V,
V
DS
= 1.0V,
ƒ = 1.0MHz
GS
= 0V,
V
DS
= 32V,
ƒ = 1.0MHz
C
iss
Input Capacitance
––– 6450 –––
––– 1690 –––
pF
V
C
oss
Output Capacitance
V
C
rss
Reverse Transfer Capacitance
Output Capacitance
–––
840
–––
C
oss
––– 5350 –––
––– 1520 –––
––– 2210 –––
C
oss
Output Capacitance
V
C
oss
eff.
Effective Output Capacitance
V
GS
= 0V, V
DS
= 0V to 32V
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
MOSFET symbol
I
S
D
S
Continuous Source Current
–––
–––
270
(Body Diode)
Pulsed Source Current
A
V
showing the
integral reverse
I
SM
G
–––
––– 1080
(Body Diode)
Diode Forward Voltage
p-n junction diode.
V
SD
T =
25°C, I
= 75A, V
= 0V
–––
–––
1.3
J
S
GS
t
rr
Q
rr
T =
25°C, I
= 75A, V
DD
= 20V
J F
di/dt = 100A/µs
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
56
67
84
100
ns
nC
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Forward Turn-On Time
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C,
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
L=0.24mH, R
G
= 25
Ω
, I
AS
= 75A, V
GS
=10V.
This is applied to D
2
Pak, when mounted on 1″ square PCB
( FR-4 or G-10 Material ).
For recommended footprint and
soldering techniques refer to application note #AN-994.
Max R
DS(on)
for D
2
Pak and TO-262 (SMD) devices.
Part not recommended for use above this value.
I
SD
≤
75A, di/dt
≤
220A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
175°C.
,
Pulse width
≤
1.0ms; duty cycle
≤
2%.
ꢀ
C
oss
eff. is a fixed capacitance that gives the same
TO-220 device will have an Rth value of 0.45°C/W.
charging time as C
oss
while V
DS
is rising from 0 to 80%
V
DSS
.
2
IRF2804/S/LPbF
10000
1000
100
10
10000
1000
100
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
V
GS
TOP
TOP
15V
10V
8.0V
7.0V
6.0V
5.5V
BOTTOM 4.5V
5.0V
BOTTOM 4.5V
4.5V
20µs PULSE WIDTH
4.5V
20µs PULSE WIDTH
Tj = 175°C
Tj = 25°C
1
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
100
10
300
250
200
150
100
50
T
J
= 25°C
J
T
= 175°C
J
T
= 175°C
T
= 25°C
J
V
= 10V
V
= 10V
DS
20µs PULSE WIDTH
DS
20µs PULSE WIDTH
1
0
4.0
5.0
6.0
7.0
8.0
9.0
0
40
80
120
160
200
V
, Gate-to-Source Voltage (V)
I ,
Drain-to-Source Current (A)
GS
D
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
3
IRF2804/S/LPbF
20
16
12
8
12000
V
C
= 0V,
f = 1 MHZ
I =
75A
D
GS
= C
+ C
, C
SHORTED
i
s
s
gs
= C
gd
ds
V
= 32V
DS
C
10000
8000
6000
4000
2000
rss
gd
VDS= 20V
VDS= 8.0V
C
= C
+ C
oss
ds gd
Ciss
4
Coss
Crss
0
0
0
40
80
120
160
200
240
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6.
Typical Gate Charge vs.
Fig 5.
Typical Capacitance vs.
Gate-to-Sourc
e
V
oltage
Drain-to-Sourc
e
V
oltage
10000
1000.0
100.0
10.0
1.0
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
1000
100
10
100µsec
1msec
10msec
T
= 25°C
1.0
Tc = 25°C
Tj = 175°C
Single Pulse
J
V
= 0V
GS
0.1
1
0.2
0.6
SD
1.4
1.8
2.2
0
1
10
100
V
, Source-toDrain Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRF2804/S/LPbF
2.0
1.5
1.0
0.5
300
250
200
150
100
50
I
= 75A
= 10V
D
V
GS
Limited By Package
0
-60 -40 -20
T
0
20 40 60 80
100 120 140 160 180
25
50
75
100
125
150
175
, Junction Temperature (°C)
J
T
, Case Temperature (°C)
C
Fig 10.
Normalized On-Resistance
Fig 9.
Maximum Drain Current vs.
vs
.
T
emperature
Cas
e
T
emperature
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-008
1E-007
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRF2804/S/LPbF
15V
1200
1000
800
600
400
200
0
I
D
TOP
31A
53A
DRIVER
+
L
V
DS
BOTTOM 75A
D.U.T
AS
R
G
V
DD
–
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
I
AS
Fig 12c.
Maximum Avalanche Energy
Fig 12b.
Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
3.0
2.0
1.0
V
G
I
= 250µA
D
Charge
Fig 13a.
Basic Gate Charge Waveform
Current Regulator
Same Type as D.U.
T
.
50K
Ω
.2
µ
F
12V
.3
µ
F
+
V
DS
D.U.
T
.
–
-75 -50 -25
0
25 50 75
100 125 150 175
, Temperature ( °C )
V
GS
T
J
3mA
I
I
D
G
Current Sampling Resistors
Fig 14.
Threshold Voltage vs. Temperature
Fig 13b.
Gate Charge Test Circuit
6
IRF2804/S/LPbF
1000
100
10
Duty Cycle = Single Pulse
Allowed avalanche Current vs
avalanche pulsewidth, tav
assuming
∆
Tj = 25°C due to
avalanche losses
0.01
0.05
0.10
1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Typical Avalanche Current Vs.Pulsewidth
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
600
TOP
BOTTOM 10%
Duty Cycle
= 75A
Single Pulse
500
400
300
200
100
0
I
D
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
7.
∆
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
D = Duty cycle in avalanche =
t
av
·f
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
D
T/ Z
thJC
I
av
= 2
D
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 16.
Maximum Avalanche Energy
vs
.
T
emperature
7
IRF2804/S/LPbF
Driver Gate Drive
P.W.
P
.
W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circui
t
L
ayou
t
C
onsiderations
•
Lo
w
S
tra
y
I
nductance
•
Ground Plane
•
Lo
w
L
eakag
e
I
nductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/d
t
c
ontrolle
d
b
y
R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 17.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
10V
Puls
e
W
idth
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 18a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b.
Switching Time Waveforms
8
IRF2804/S/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
Notes:
1. Fo
r
a
n
A
utomotiv
e
Q
ualifie
d
v
ersio
n
o
f
t
hi
s
p
ar
t
p
leas
e
s
e
e
h
ttp://www.irf.com/product-info/datasheets/data/auirf2804.pdf
9
IRF2804/S/LPbF
D
2
Pak Package Outline
Dimensions are shown in millimeters (inches)
D
2
Pak Part Marking Information
Notes:
1. Fo
r
a
n
A
utomotiv
e
Q
ualifie
d
v
ersio
n
o
f
t
hi
s
p
ar
t
p
leas
e
s
e
e
h
ttp://www.irf.com/product-info/datasheets/data/auirf2804.pdf
10
IRF2804/S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
OR
Notes:
1. Fo
r
a
n
A
utomotiv
e
Q
ualifie
d
v
ersio
n
o
f
t
hi
s
p
ar
t
p
leas
e
s
e
e
h
ttp://www.irf.com/product-info/datasheets/data/auirf2804.pdf
11
IRF2804/S/LPbF
D
2
Pak
T
a
pe & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
TO-220AB package is not recommended for Surface Mount Application.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
12
