Infineon-Technologies-IRF2907ZPBF
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PD – 95489D
IRF2907ZPbF
IRF2907ZSPbF
IRF2907ZLPbF
Features
HEXFET
®
Power MOSFET
l
l
l
l
l
l
Advanced Process Technology
Ultr
a
L
o
w
O
n-Resistance
175°
C
O
peratin
g
T
emperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free
D
V
DSS
= 75V
R
DS(on)
= 4.5m
Ω
G
∗
I
D
= 160A
S
Description
Thi
s
H
EXFET
®
Powe
r
M
OSFE
T
u
tilize
s
t
h
e
l
atest
processing techniques to achieve extremely low
on-resistanc
e
p
e
r
s
ilico
n
a
rea. Additiona
l
f
eatures
of this design
are a 175°C junction operating
temperature, fast switching speed and improved
repetitiv
e
a
valanch
e
r
ating
.
T
hes
e
f
eature
s
c
ombine
to make this design an extremely efficient and
reliable device for use in
a wide variety of
applications.
D
2
Pak
IRF2907ZSPbF IRF2907ZLPbF
TO-262
TO-220AB
IRF2907ZPbF
Absolute Maximum Ratings
Parameter
Max.
170
Units
A
I
I
I
I
@ T
C
= 25°C
@ T
C
= 100°C
@ T
C
= 25°C
Continuous Drain Current, V
GS
@ 10V (Silicon Limited)
D
D
D
120
Continuous Drain Current, V
GS
@ 10V (See Fig. 9)
160 *
680
(Wirebond Limited)
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
DM
P
@T
C
= 25°C
300
W
Maximum Power Dissipation
Linear Derating Factor
D
2.0
± 20
W/°C
V
V
GS
Gate-to-Source Voltage
E
AS
270
690
mJ
Single Pulse Avalanche Energy (Thermally Limited)
Single Pulse Avalanche Energy Tested Value
Avalanche Current
E
AS
(tested)
I
AR
See Fig.12a,12b,15,16
A
E
AR
mJ
Repetitive Avalanche Energy
Operating Junction and
T
J
-55 to
+ 175
T
STG
°C
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Typ.
–––
Max.
0.50
–––
62
Units
Parameter
R
θ
JC
Junction-to-Case
R
θ
CS
R
θ
JA
R
θ
JA
0.50
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
°C/W
–––
40
Junction-to-Ambient (PCB Mount, steady state)
HEXFET
®
is a registered trademark of International Rectifier.
1
07/22/10
IRF2907Z/S/LPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
Units
75 –––
–––
Conditions
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
∆Β
V
∆
V
DSS
/ T
J
Breakdown Voltage Temp. Coefficient
––– 0.069 –––
V/°C Reference
to 25°C, I
D
= 1mA
R
DS(on)
V
GS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
2.0
3.5
–––
–––
–––
–––
–––
4.5
4.0
–––
20
V
V
V
V
V
GS
= 10V, I
D
= 75A
m
Ω
V
DS
= V
GS
, I
D
= 250µA
DS
= 25V, I
D
= 75A
gfs
I
DSS
Forward Transconductance
180
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
S
Drain-to-Source Leakage Current
µA
DS
= 75V, V
GS
= 0V
250
200
DS
= 75V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA V
GS
= 20V
V
GS
= -20V
I
D
= 75A
––– -200
Q
g
Q
gs
Q
gd
t
d(on)
t
r
180
46
270
–––
–––
–––
–––
–––
–––
–––
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
nC
V
V
V
DS
= 60V
GS
= 10V
DD
= 38V
65
19
ns
Rise Time
140
97
I
D
= 75A
t
d(off)
t
f
Ω
G
= 2.5
Turn-Off Delay Time
R
Fall Time
100
5.0
V
GS
= 10V
L
D
D
S
Internal Drain Inductance
nH Between
lead,
6mm (0.25in.)
from package
G
L
S
Internal Source Inductance
–––
13
–––
and center of die contact
GS
= 0V
C
iss
Input Capacitance
––– 7500 –––
pF
V
C
oss
Output Capacitance
–––
–––
970
510
–––
–––
V
DS
= 25V
C
rss
Reverse Transfer Capacitance
Output Capacitance
ƒ = 1.0MHz, See Fig. 5
C
oss
––– 3640 –––
––– 650 –––
––– 1020 –––
V
V
GS
= 0V,
V
DS
= 1.0V,
ƒ = 1.0MHz
GS
= 0V,
V
DS
= 60V,
ƒ = 1.0MHz
C
oss
Output Capacitance
C
oss
eff.
Effective Output Capacitance
V
GS
= 0V, V
DS
= 0V to 60V
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
D
S
I
S
Continuous Source Current
MOSFET symbol
–––
––– 160*
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
I
SM
–––
–––
–––
–––
680
1.3
(Body Diode)
p-n junction diode.
V
SD
T =
25°C, I
= 75A, V
= 0V
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
V
J
S
GS
t
rr
Q
rr
T =
25°C, I
= 75A, V
DD
= 38V
–––
–––
41
59
61
89
ns
nC
J
F
di/dt = 100A/µs
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L=0.095mH,
R
G
= 25
Ω
, I
AS
= 75A, V
GS
=10V.
This value determined from sample failure population.
100% tested to this value in production.
This is applied to D
2
Pak, when mounted on 1″ square PCB
( FR-4 or G-10 Material ).
For recommended footprint and
soldering techniques refer to application note #AN-994.
Part not recommended for use above this value.
I
SD
≤
75A, di/dt
≤
340A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
175°C.
Pulse width
≤
1.0ms; duty cycle
≤
2%.
,
R
is measured at
T
J
of approximately 90°C.
TO-220 device will have an Rth of 0.45°C/W.
θ
∗
Calculated continuous current based on maximum
ꢀ
C
oss
eff. is a fixed capacitance that gives the same
allowable junction temperature. Bond wire current limit is
160A.Note that current limitations arising from heating of
the device leads may occur with some lead mounting
charging time as C
oss
while V
DS
is rising from
0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical
repetitive avalanche performance.
technical-info/appnotes/an-1140.pdf
)
2
IRF2907Z/S/LPbF
1000
100
10
10000
1000
100
10
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
4.5V
TOP
TOP
BOTTOM
BOTTOM
4.5V
4.5V
60µs PULSE WIDTH
Tj = 175°C
≤
60µs PULSE WIDTH
≤
Tj = 25°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
100
10
200
T
= 25°C
J
T
= 175°C
J
150
100
50
T
= 175°C
J
T
= 25°C
J
1
V
= 10V
DS
380µs PULSE WIDTH
V
= 25V
DS
≤
60µs PULSE WIDTH
0.1
0
2
4
6
8
10
0
25
50
75
100
125
150
I ,Drain-to-Source
Current (A)
D
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Typical Forward Transconductance
vs. Drain Current
3
IRF2907Z/S/LPbF
100000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I =
90A
D
C
C
C
+ C
, C
SHORTED
iss
gs
gd
ds
V
V
V
= 60V
= 38V
= 15V
= C
DS
DS
DS
rss
oss
gd
= C
+ C
ds
gd
10000
1000
100
C
iss
6.0
C
C
oss
rss
4.0
2.0
0.0
1
10
100
0
50
100
150
200
V
, Drain-to-Source Voltage (V)
Q
Total Gate Charge (nC)
DS
G
Fig 6.
Typical Gate Charge vs.
Fig 5.
Typical Capacitance vs.
Gate-to-Sourc
e
V
oltage
Drain-to-Sourc
e
V
oltage
10000
1000
100
10
1000
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
100
10
1
1msec
Limited by package
T =
25°C
J
10msec
DC
1
Tc = 25°C
Tj = 175°C
V
= 0V
GS
Single Pulse
0.1
1
10
100
0.0
0.5
1.0
1.5
2.0
2.5
V
, Drain-to-Source Voltage (V)
V
, Source-to-Drain Voltage (V)
DS
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRF2907Z/S/LPbF
2.5
2.0
1.5
1.0
0.5
180
160
140
120
100
80
I
= 90A
Limited By Package
D
V
= 10V
GS
60
40
20
0
-60 -40 -20
T
0
20 40 60 80
100 120 140 160 180
25
50
75
100
125
150
175
, Junction Temperature (°C)
T
, Case Temperature (°C)
J
C
Fig 10.
Normalized On-Resistance
Fig 9.
Maximum Drain Current vs.
vs
.
T
emperature
Cas
e
T
emperature
1
D = 0.50
0.1
0.20
0.10
0.05
R
1
R
1
R
2
R
2
Ri (°C/W)
τ
i (sec)
τ
J
τ
J
τ
0.279
0.000457
τ
0.02
0.01
C
τ
0.01
τ
1
τ
1
Ci=
τ
i
/
Ri
2
τ
2
0.221
0.003019
SINGLE PULSE
0.001
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRF2907Z/S/LPbF
1200
1000
800
600
400
200
0
15V
I
D
9.0A
13A
TOP
DRIVER
L
BOTTOM 75A
V
DS
D.U.T
AS
R
G
+
–
V
DD
I
A
V
20V
GS
Ω
0.01
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
Starting T
, Junction Temperature (°C)
J
I
AS
Fig 12c.
Maximum Avalanche Energy
Fig 12b.
Unclamped Inductive Waveforms
vs. Drain Current
Q
G
10 V
Q
Q
GD
GS
4.0
V
G
3.5
3.0
2.5
2.0
1.5
1.0
Charge
Fig 13a.
Basic Gate Charge Waveform
I
= 250µA
D
L
VCC
DUT
0
-75 -50 -25
0
25 50 75
100 125 150 175 200
1K
T ,
Temperature ( °C )
J
Fig 14.
Threshold Voltage vs. Temperature
Fig 13b.
Gate Charge Test Circuit
6
IRF2907Z/S/LPbF
100
10
1
Duty Cycle = Single Pulse
0.01
Allowed avalanche Current vs
avalanche pulsewidth, tav
0.05
0.10
∆
assuming
Tj = 25°C due to
avalanche losses
0.1
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 15.
Typical Avalanche Current Vs.Pulsewidth
300
250
200
150
100
50
Notes on Repetitive Avalanche Curves , Figures 15, 16:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a
temperature far in excess of T
jmax
. This is validated for
every part type.
2. Safe operation in Avalanche is allowed as long asT
jmax
is
not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
4. P
D (ave)
= Average power dissipation per single
avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. I
av
= Allowable avalanche current.
TOP
BOTTOM 1%
Duty Cycle
= 75A
Single Pulse
I
D
7.
∆
T
=
Allowable rise in junction temperature, not to exceed
T
jmax
(assumed as 25°C in Figure 15, 16).
t
av =
Average time in avalanche.
0
D = Duty cycle in avalanche =
t
av
·f
25
50
75
100
125
150
175
Z
thJC
(D, t
av
) = Transient thermal resistance, see figure 11)
Starting T
, Junction Temperature (°C)
J
P
D (ave)
= 1/2 ( 1.3·BV·I
av
) =
D
T/ Z
thJC
I
av
= 2
D
T/ [1.3·BV·Z
th
]
E
AS (AR)
= P
D (ave)
·t
av
Fig 16.
Maximum Avalanche Energy
vs
.
T
emperature
7
IRF2907Z/S/LPbF
Driver Gate Drive
P.W.
P
.
W.
Period
Period
D =
D.U.T
+
*
=10V
V
GS
Circui
t
L
ayou
t
C
onsiderations
•
Lo
w
S
tra
y
I
nductance
•
Ground Plane
•
Lo
w
L
eakag
e
I
nductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
–
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
Re-Applied
Voltage
•
dv/d
t
c
ontrolle
d
b
y
R
G
R
G
+
–
Body Diode
Forward Drop
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 17.
Peak Diode Recovery dv/dt Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
10V
Puls
e
W
idth
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 18a.
Switching Time Test Circuit
V
DS
90%
10%
V
GS
t
t
r
t
t
f
d(on)
d(off)
Fig 18b.
Switching Time Waveforms
8
IRF2907Z/S/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EX
A
M
P
LE: THIS
IS
A
N
I
RF1010
P
A
R
T NU
M
B
ER
L
O
T CODE 1789
IN
T
ERN
A
T
I
O
NAL
RE
C
T
I
FIER
L
O
GO
A
S
SE
M
B
LED
O
N W
W
1
9, 2000
IN
T
HE
A
S
SE
M
B
LY LINE “
C
”
DAT E
CODE
YE
A
R 0 =
2
000
W
E
EK 19
N
o
te: “
P
” in
a
s
s
e
mb
l
y lin
e
p
o
s
i
tion
indic
a
t
e
s
“
L
e
ad
– F
r
e
e”
A
S
SE
M
B
LY
L
O
T CODE
L
I
NE C
TO-220AB packages are not recommended for Surface Mount Application.
Notes:
9
IRF2907Z/S/LPbF
D
2
Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D
2
Pak (TO-263AB) Part Marking Information
THIS IS
A
N
I
RF530S
W
I
TH
P
A
R
T
N
UMBER
L
O
T CO
D
E 8024
IN
T
ER
N
A
T
I
O
N
A
L
RE
C
T
IFIER
L
O
GO
A
S
SE
M
B
LED
O
N WW 0
2
, 2000
IN
T
H
E
A
S
SE
M
B
LY LI
N
E “
L
”
F
5
30S
DAT E
CODE
Y
E
A
R 0 =
2
000
W
E
EK
0
2
AS S E MB L Y
L
O
T CODE
LINE L
OR
P
A
R
T NU
M
B
ER
IN
T
ERN
A
T
I
O
NAL
RE
C
T
I
FIER
L
O
GO
F
5
30S
D
A
T
E
C
ODE
P =
DE S I
G
N
A
T E S
L E AD – F R E E
PR
O
D
U
C
T (O
P
TI
O
N
A
L
)
Y
E
A
R 0 =
2
000
A
S
SE
M
B
LY
L
O
T CO
D
E
W
E
EK
0
2
A=
A
S
SE
M
B
LY
SITE
C
O
D
E
Notes:
10
IRF2907Z/S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EX
A
M
P
LE: THIS
IS
A
N
I
RL3103L
L
O
T CODE 1789
P
A
R
T NU
M
B
ER
INTER
N
A
T
I
O
NAL
RE
C
T
I
F
I
E
R
A
S
SE
M
B
LED
O
N WW
1
9, 1997
IN T HE
A
S S E M
B
L Y L INE
“
C
”
L
O
GO
DAT E
CODE
Y
E
A
R 7 =
1997
W
E
E K
19
AS S E MB
L
Y
L
O
T CO
D
E
LI
N
E C
OR
P
A
R
T NUMBER
IN
T
ER
N
A
T
I
O
NAL
RE
C
T
I
F
I
E
R
L
O
GO
D
A
T
E
C
O
D
E
P =
DES I
G
NAT E S
L
E
A
D-F R
E
E
PR
O
D
U
C
T (OP
T
I
O
NA
L
)
YE
A
R 7 =
1
997
AS S
E
M
B
LY
L
O
T CODE
WE
E
K
1
9
A =
A
S S E M
B
L Y S IT E
C
O
D
E
Notes:
11
IRF2907Z/S/LPbF
D
2
Pak
T
a
pe & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
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