Infineon-Technologies-IRF3415PBF
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PD – 94963
IRF3415PbF
HEXFET
®
Power MOSFET
l
Advanced Process Technology
l
Dynamic dv/dt Rating
D
l
175°C Operating Temperature
l
Fast Switching
V
DSS
= 150V
l
Fully Avalanche Rated
l
Lead-Free
R
DS(on)
= 0ꢀ042
Ω
G
Description
I
D
= 43A
S
Fift
h
G
eneratio
n
H
EXFET
s
f
ro
m
I
nternationa
l
R
ectifier
utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area#
This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications#
The TO-220 package is universally preferred for all
commercial-industria
l
a
pplication
s
a
t
p
owe
r
d
issipation
levels to approximately 50 watts#
The low thermal
resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the
industry#
TO-220AB
Absolute Maximum Ratings
Parameter
Maxꢀ
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
43
30
150
A
P
D
@T
C
= 25°C
Power Dissipation
200
W
W/°C
V
Linear Derating Factor
1%3
V
GS
E
AS
I
AR
Gate-to-Source Voltage
± 20
590
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
22
E
AR
dv/dt
T
J
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
20
mJ
V/ns
5%0
-55 to
+ 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1%6mm from case )
10 lbfin (1%1Nm)
Thermal Resistance
Parameter
Junction-to-Case
Typꢀ
Maxꢀ
Units
R
θ
JC
R
θ
CS
R
θ
JA
0%75
62
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
0%50
°C/W
1/30/04
IRF3415PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Minꢀ Typꢀ Maxꢀ Units
150
Conditions
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp% Coefficient
0%17
V/°C
Reference to 25°C, I
D
= 1mA
R
DS(on)
V
GS(th)
g
fs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
0%042
Ω
V
S
V
GS
= 10V, I
D
= 22A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 50V, I
D
= 22A
V
DS
= 150V, V
GS
= 0V
V
DS
= 120V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
2%0
19
4%0
Forward Transconductance
25
250
100
-100
200
17
98
I
DSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
I
GSS
V
GS
= -20V
Q
g
I
D
= 22A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
nC V
DS
= 120V
V
GS
= 10V, See Fig% 6 and 13
12
55
71
69
V
DD
= 75V
I
D
= 22A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 2%5
Ω
R
D
= 3%3
Ω,
See Fig% 10
Between lead,
6mm (0%25in%)
from package
and center of die contact
V
GS
= 0V
D
S
4%5
L
D
L
S
Internal Drain Inductance
Internal Source Inductance
nH
pF
G
7%5
C
iss
C
oss
C
rss
Input Capacitance
2400
640
340
Output Capacitance
V
DS
= 25V
Reverse Transfer Capacitance
= 1%0MHz, See Fig% 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Minꢀ Typꢀ Maxꢀ Units
Conditions
MOSFET symbol
showing the
D
I
S
43
A
G
I
S
M
Pulsed Source Current
(Body Diode)
integral reverse
150
S
p-n junction diode%
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
1%3
260 390
2%2 3%3
V
T
J
= 25°C, I
S
= 22A, V
GS
= 0V
ns
T
J
= 25°C, I
F
= 22A
Q
rr
µC di/dt
= 100A/µs
Notes:
Repetitive rating;
pulse width limited by
I
SD
≤
22A, di/dt
≤
820A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
175°C
,
max% junction temperature% ( See fig% 11 )
V
DD
= 25V, starting T
J
= 25°C, L = 2%4mH
R
G
= 25
Ω
, I
AS
= 22A% (See Figure 12)
Pulse width
≤
300µs; duty cycle
≤
2ꢀ%
IRF3415PbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
8.0V
7.0V
6.0V
5.5V
5ꢀ0V
.
5ꢀ0V
BOTTO
M
4
.5V
BOTTOM 4.5V
4.5V
4.5V
10
20us PULSE WIDTH
20us PULSE WIDTH
T =
25
o
C
J
T =
17
5
o
C
J
1
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1ꢀ
Typical Output Characteristics
Fig 2ꢀ
Typical Output Characteristics
1000
3.0
37A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
°
T =
25 C
J
100
°
T =
175 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
= 10V
GS
10
-60 -40 -20
0
20 40 60 80
100 120 140 160 180
o
4
5
6
7
8
9
10
T ,
Junction Temperature (
C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3ꢀ
Typical Transfer Characteristics
Fig 4ꢀ
Normalized On-Resistance
Vsꢀ Temperature
IRF3415PbF
6000
20
16
12
8
V
= 0V,
f = 1MHz
gd ,
ds
I
D
= 22A
GS
C
= C
+ C
C
SHORTED
V
V
V
= 120V
= 75V
= 30V
iss
gs
DS
DS
DS
C
= C
gd
rss
5000
4000
3000
2000
1000
0
C
= C
+ C
ds
oss
gd
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
40
80
120 160
200
V
, Drain-to-Source Voltage (V)
Q ,
Total Gate Charge (nC)
DS
G
Fig 6ꢀ
Typical Gate Charge Vsꢀ
Fig 5ꢀ
Typical Capacitance Vsꢀ
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
10
1
100
10
1
10us
T =
17
5
o
C
J
100us
T =
2
5
o
C
J
1ms
T =
25
o
C
C
10ms
T =
175
o
C
J
V
= 0 V
Single Pulse
GS
0.1
0.2
1
10
100
1000
0.6
1.0
1.4
1.8
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8ꢀ
Maximum Safe Operating Area
Fig 7ꢀ
Typical Source-Drain Diode
Forward Voltage
IRF3415PbF
R
D
50
40
30
20
10
0
V
DS
V
GS
10V
D%U%T%
R
G
+
V
DD
–
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10aꢀ
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
, Case Temperature
( C)
T
C
10%
V
GS
t
t
r
t
t
f
Fig 9ꢀ
Maximum Drain Current Vsꢀ
d(on)
d(off)
Case Temperature
Fig 10bꢀ
Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.10
0.05
P
2
DM
t
1
0.02
0.01
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
=
P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t ,
Rectangular Pulse Duration (sec)
1
Fig 11ꢀ
Maximum Effective Transient Thermal Impedance, Junction-to-Case
IRF3415PbF
1400
1200
1000
800
600
400
200
0
I
D
TOP
9.0A
16A
15V
BOTTOM 22A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
0.01
Ω
t
p
Fig 12aꢀ
Unclamped Inductive Test Circuit
25
50
75
100
125
150
175
Starting T
, Junction Temperature (
o
C)
V
(BR)DSS
J
t
p
Fig 12cꢀ
Maximum Avalanche Energy
Vsꢀ Drain Current
I
AS
Current Regulator
Same Type as D.U.
T
.
Fig 12bꢀ
Unclamped Inductive Waveforms
50K
Ω
.2
µ
F
12V
Q
G
.3
µ
F
+
10 V
V
DS
D.U.
T
.
–
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13bꢀ
Gate Charge Test Circuit
Fig 13aꢀ
Basic Gate Charge Waveform
IRF3415PbF
Peak Diode Recovery dv/dt Test Circuit
+
–
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
DꢀUꢀT
+
–
–
+
R
G
•
dv/dt controlled by R
G
+
–
•
Driver same type as D%U%T%
•
I
SD
controlled by Duty Factor “D”
•
D%U%T% – Device Under Test
V
DD
Driver Gate Drive
P.W.
P
.
W.
Period
Period
D =
V
=10V
*
GS
D.U.
T
. I
W
aveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 14ꢀ
For N-Channel HEXFETS
IRF3415PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
3.78 (.149)
– B –
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
– A –
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAM
P
LE:
T HIS
IS
A
N I
R
F1010
L
O
T CODE 1789
P
A
R
T NU
M
B
ER
AS S
E
M
B
LED
O
N WW 19, 1997
IN T
H
E
A
S
S
E
M
B
LY L
I
NE
“C”
INT
E
R
N
AT IONAL
RE
C
T
I
FIER
L
O
GO
Note:
“P” in assembly line
position indicates “Lead-Free”
D
A
T E
CO
D
E
Y
E
A
R 7 =
1
997
W
E
EK
1
9
AS S
E
M
BLY
L
O
T CODE
L
I
NE C
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Note: For
the most current drawings please refer to the IR website at:
