Infineon-Technologies-IRF3709PBF
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PD – 95495
IRF3709PbF
IRF3709SPbF
IRF3709LPBF
SMPS MOSFET
Applications
HEXFET
®
Power MOSFET
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck
Converters for
Server Processor Power Synchronous FET
l
Optimized for Synchronous Buck
Converters Including Capacitive Induced
Turn-on Immunity
V
DSS
30V
R
DS(on)
max
I
D
90A
9.0m
Ω
l
Lead-Free
Benefits
l
Ultra-Low Gate Impedance
D
2
Pak
IRF3709S
TO-262
IRF3709L
TO-220AB
IRF3709
l
Very Low RDS(on) at 4.5V V
GS
l
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol
V
DS
Parameter
Drain-Source Voltage
Max.
30
Units
V
V
GS
Gate-to-Source Voltage
± 20
V
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
90
57
A
360
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
Maximum Power Dissipation
Maximum Power Dissipation
ꢀ
Linear Derating Factor
120
W
W
3.1
0.96
mW/°C
°C
T
J
, T
STG
Junction and Storage Temperature Range
-55 to
+ 150
Thermal Resistance
Parameter
Junction-to-Case
Typ.
Max.
1.04
–––
62
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
–––
0.50
–––
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB
mount)
ꢀ
°C/W
40
Notes
through
are on page 11
1
07/01/04
IRF3709/S/LPbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
30 –––
–––
––– 0.029 –––
V/°C Reference
to 25°C, I
D
= 1mA
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
V
GS
= 0V, I
D
= 250µA
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
–––
–––
1.0
6.4
9.0
V
GS
= 10V, I
D
= 15A
V
GS
= 4.5V, I
D
= 12A
V
DS
= V
GS
, I
D
= 250µA
m
Ω
V
R
DS(on)
V
GS(th)
I
DSS
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
7.4 10.5
––– 3.0
––– ––– 20
––– –––
100
––– –––
200
––– –––
-200
V
DS
= 24V, V
GS
= 0V
µA
Drain-to-Source Leakage Current
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= 16V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
I
GSS
nA
V
GS
= -16V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
Conditions
53
––– –––
27 41
S
V
DS
= 15V, I
D
= 30A
I
D
= 15A
Q
g
–––
–––
–––
–––
–––
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
6.7 –––
9.7 –––
22 –––
11 –––
nC V
DS
= 16V
V
GS
= 5.0V
V
GS
= 0V, V
DS
= 10V
V
DD
= 15V
––– 171
–––
I
D
= 30A
ns
pF
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
–––
–––
21 –––
9.2 –––
R
G
= 1.8
Ω
V
GS
= 4.5V
C
iss
C
oss
C
rss
Input Capacitance
––– 2672
–––
––– 1064
–––
––– 109
–––
V
GS
= 0V
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 16V
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
382
30
Units
mJ
I
AR
Avalanche Current
–––
A
Diode Characteristics
Symbol
I
S
Parameter
Min. Typ. Max. Units
Conditions
D
Continuous Source Current
(Body Diode)
MOSFET symbol
showing the
––– –––
––– –––
90
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
360
S
––– 0.88 1.3
––– 0.82 –––
V
T
J
= 25°C, I
S
= 30A, V
GS
= 0V
T
J
= 125°C, I
S
= 30A, V
GS
= 0V
T
J
= 25°C, I
F
= 30A, V
R
=15V
V
SD
Diode Forward Voltage
t
rr
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Time
Reverse Recovery Charge
––– 48
––– 46
––– 48
––– 52
72
69
72
78
ns
Q
rr
t
rr
nC di/dt
= 100A/µs
ns T
J
= 125°C, I
F
= 30A, V
R
=15V
nC di/dt
= 100A/µs
Q
rr
2
IRF3709/S/LPbF
1000
100
10
1000
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM2.7V
BOTTOM2.7V
2.7V
2.7V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T =
25 C
J
°
T =
150 C
J
1
0.1
1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
90A
=
I
D
°
T =
25 C
J
1.5
1.0
0.5
0.0
°
T =
150 C
J
100
V
= 15V
DS
20µs PULSE WIDTH
V
=
1
0V
GS
10
2.0
-60 -40 -20
0
20 40 60 80
100 120 140 160
°
3.0
4.0
5.0 6.0
7.0
T ,
Junction Temperature
( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRF3709/S/LPbF
6
5
4
3
2
1
0
4000
I =
30A
D
V
= 0V,
f = 1MHz
gd ,
ds
V
V
V
= 24V
= 15V
= 6V
GS
DS
DS
DS
C
= C
+ C
gs
C
SHORTED
iss
C
= C
gd
rss
C
= C
+ C
ds
oss
gd
3000
2000
1000
0
C
iss
C
oss
C
rss
1
10
100
0
5
10
15
20
25
30
V
, Drain-to-Source Voltage (V)
DS
Q ,
Total Gate Charge (nC)
G
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
10000
1000
100
10
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T =
150 C
J
10us
100us
°
T =
25 C
1ms
J
1
10ms
°
T =
25 C
C
°
T =
150 C
Single Pulse
J
V
= 0 V
GS
1
0.1
0.2
1
10
100
0.8
1.4
2.0
2.6
V
, Drain-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
DS
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRF3709/S/LPbF
R
D
100
80
60
40
20
0
V
DS
LIMITED BY PACKAGE
V
GS
D.U.T.
R
G
+
V
DD
–
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T ,
Case Temperature
( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9.
Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b.
Switching Time Waveforms
10
1
D = 0.50
0.20
P
2
DM
0.10
0.05
0.1
t
1
t
0.02
0.01
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D
=
t
/ t
1
2. Peak T
=
P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRF3709/S/LPbF
1200
1000
800
600
400
200
0
I
15V
D
TOP
13A
19A
BOTTOM 30A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
–
I
AS
20V
0.01
Ω
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
°
Starting T
, Junction Temperature(
C)
J
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b.
Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.
T
.
50K
Ω
.2
µ
F
12V
.3
µ
F
Q
G
+
V
GS
V
DS
D.U.
T
.
–
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
6
IRF3709/S/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current T
r
a
nsformer
D.U.T
–
+
–
–
+
R
G
•
dv/dt controlled by R
G
+
–
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
V
DD
Driver Gate Drive
P.W.
P
.
W.
Period
Period
D =
V
=10V
*
GS
D.U.
T
. I
W
aveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 14.
For N-Channel HEXFET
®
Power MOSFETs
7
IRF3709/S/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
10.29 (.405)
– B –
3.78 (.149)
3.54 (.139)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
1.32 (.052)
1.22 (.048)
– A –
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
2- DRAIN
3- SOURCE
1
2
3
1- GATE
1- GATE
2- COLLECTOR
3- EMITTER
4- COLLECTOR
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1 DIMENSIONING
& TOLERANCING PER ANSI Y14.5M, 1982.
2 CONTROLLING
DIMENSION : INCH
3 OUTLINE
CONFORMS TO JEDEC OUTLINE TO-220AB.
4 HEATSINK
& LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E XAMP LE :
TH IS
IS AN I
R
F1
0 1 0
LO T C O D E
1 7 8 9
P A
R
T
N U MBER
AS S EMB
L
E D
O N
W
W 1
9 ,
1 9 9 7
IN
T
H
E AS
S
E
MBLY
L
I
N
E
“
C ”
IN T
E
RN AT
I
O N AL
REC T
I
F
I
E
R
LO G O
Note:
“P” in assembly line
position indicates “Lead-Free”
D ATE
C O DE
Y
E
AR 7 =
1 9 9 7
W
E
E K
1 9
AS S E MBLY
LO T C O D E
LIN E
C
8
IRF3709/S/LPbF
D
2
Pak Package Outline
Dimensions are shown in millimeters (inches)
D
2
Pak Part Marking Information
THIS IS AN I
R
F530S W
I
TH
LOT CODE 8024
P
A
R
T NUMBER
I
N
T
E
RN
A
TI
O
N
A
L
RECT
I
F
I
E
R
L
O
GO
A
S
SEMB
L
E
D ON WW 02, 2000
IN THE A
S
SE
M
BLY LINE “L”
F530S
D
A
T E
C
ODE
Y
E
AR 0 =
2000
WE E K
0
2
Not
e
:
“
P
”
i
n
a
ssemb
l
y li
n
e
pos
i
ti
o
n
i
n
d
i
c
a
t
es
“
L
e
ad-Free”
A
S
SEMB
L
Y
L
O
T CODE
LINE L
OR
P
A
RT NUMBER
INTERNATI
O
N
A
L
REC
T
I
F
I
ER
L
O
GO
F530S
D
A
TE
C
ODE
P =
DE S I
G
N
AT E S
L E AD-F RE E
PRODUCT (OP
T
I
O
N
A
L)
Y
E
A
R 0 =
2
000
AS S E MB L Y
L
O
T CO
D
E
WEEK 02
A =
A
S S E MB L Y S IT E
C
O
DE
9
IRF3709/S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
E
X
AM
P
L
E: THIS
IS AN IRL31
0
3L
L
O
T CODE 1789
P
A
R
T NUMBER
INTERNATIONAL
RECT
I
F
I
E
R
LOGO
A
S
SE
M
BL
E
D ON
W
W
1
9, 1997
IN THE A
S
SE
M
BLY
LINE
“
C
”
DAT E
C
ODE
Y
E
A
R 7 =
1
997
WEEK 19
Not
e
:
“
P
”
i
n
a
ssemb
l
y line
pos
i
ti
o
n
i
n
d
i
c
ates
“
L
e
ad-Free”
A
S
SE
M
BLY
LOT CODE
LI
N
E C
OR
P
A
RT NUMBER
INT
E
RNATIONAL
RECT
I
F
I
E
R
L
O
GO
DATE
C
ODE
P =
DES
I
G
NATES LEAD-FREE
PRODUCT (OP
T
I
O
NAL)
Y
E
AR 7 =
1997
A
S
SE
M
BLY
L
O
T CODE
WEEK 19
A =
A
S
SE
M
BL
Y
S
I
TE
C
ODE
10
IRF3709/S/LPbF
D
2
Pak
T
a
pe & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
1.85 (.073)
11.60 (.457)
11.40 (.449)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
TRL
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
Repetitive rating;
pulse width limited by
Pulse width
≤
400µs; duty cycle
≤
2%.
max. junction temperature.
This is only applied to TO-220AB package
Starting T
J
= 25°C, L = 0.85mH
R
G
= 25
Ω
, I
AS
= 30A.
ꢀ
This is applied to D
2
Pak, when mounted on 1″ square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
11
Note: For
the most current drawings please refer to the IR website at:
