Infineon-Technologies-IRF3710LPBF
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IRF3710SPbF
IRF3710LPbF
HEXFET
®
Power MOSFET
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
D
V
DSS
= 100V
R
DS(on)
= 23m
Ω
G
l
Fully Avalanche Rated
l
Lead-Free
I
D
= 57A
S
Description
Advanced HEXFET
®
Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance per
silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known for,
provides the designer with an extremely efficient and reliable device for use in
a wide variety of applications.
The D
2
Pak is a surface mount power package capable of accommodating die
sizes up to HEX-4. It provides the highest power capability and the lowest
possible on-resistance in any existing surface mount package. The D
2
Pak is
suitable for high current applications because of its low internal connection
resistance and can dissipate up to 2.0W in a typical surface mount application.
The through-hole version (IRF3710L) is available for low-profile applications.
D
2
Pak
IRF3710SPbF
TO-262
IRF3710LPbF
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
57
40
A
180
P
D
@T
C
= 25°C
Power Dissipation
200
W
W/°C
V
Linear Derating Factor
1.3
V
GS
I
AR
Gate-to-Source Voltage
± 20
Avalanche Current
28
20
A
E
AR
dv/dt
T
J
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
5.8
-55 to
+ 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
0.75
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Ambient
(PCB Mounted,steady-state)**
–––
40
1
IRF3710S/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
100 –––
–––
Conditions
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
––– 0.13
––– V/°C
Reference to 25°C, I
D
= 1mA
R
DS(on)
V
GS(th)
g
fs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 23
m
Ω
V
GS
= 10V, I
D
=28A
2.0
32
––– 4.0
––– –––
V
S
V
DS
= V
GS
, I
D
= 250µA
Forward Transconductance
V
DS
= 25V, I
D
= 28A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
––– ––– 25
––– –––
250
––– –––
100
––– –––
-100
––– –––
130
––– ––– 26
––– ––– 43
I
DSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
I
GSS
V
GS
= -20V
Q
g
I
D
= 28A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
nC V
DS
= 80V
V
GS
= 10V, See Fig. 6 and 13
–––
–––
–––
–––
12 –––
58 –––
45 –––
47 –––
V
DD
= 50V
I
D
= 28A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 2.5
Ω
V
GS
= 10V, See Fig. 10
Between lead,
6mm (0.25in.)
D
S
4.5
L
D
L
S
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
G
from package
7.5
and center of die contact
V
GS
= 0V
C
iss
C
oss
C
rss
E
AS
Input Capacitance
––– 3130
–––
––– 410
–––
Output Capacitance
V
DS
= 25V
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
72 –––
pF
ƒ = 1.0MHz, See Fig. 5
––– 1060
ꢀ
280
mJ I
AS
= 28A, L = 0.70mH
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
I
S
57
––– –––
––– –––
showing the
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
230
S
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.2
––– 140 220
V
T
J
= 25°C, I
S
= 28A, V
GS
= 0V
T
J
= 25°C, I
F
= 28A
ns
Q
rr
t
on
––– 670
1010 nC di/dt
= 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
ꢀ
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to T
J
= 175°C .
Uses IRF3710 data and test conditions.
Repetitive rating;
pulse width limited by
max. junction temperature. (See fig. 11).
Starting T
J
= 25°C, L = 0.70mH, R
G
= 25
Ω
,
I
AS
= 28A, V
GS
=10V. (See Figure 12).
≤
28A
,
di/d
t
≤
380A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
175°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
,
**When mounted on 1″ square PCB (FR-4 or G-10 Material). For
recommended footprint and soldering techniques refer to application
note #AN-994.
2
IRF3710S/LPbF
1000
100
10
1000
100
10
VGS
16V
VGS
16V
TOP
TOP
10V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
7.0V
6.0V
5.0V
4.5V
4.0V
BOTTOM 3.5V
BOTTOM 3.5V
3.5V
3.5V
1
1
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
3.0
1000.00
57A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
100.00
10.00
1.00
T
= 175°C
J
T
J
= 25°C
V
=
50V
DS
20µs PULSE WIDTH
V
= 10V
GS
0.10
-60 -40 -20
0
20 40 60 80
100 120 140 160 180
°
3.0
4.0
5.0
6.0
7.0
8.0
9.0
T ,
Junction Temperature
( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRF3710S/LPbF
12
10
7
100000
10000
1000
100
D
I
=
28A
V
C
= 0V,
f = 1 MHZ
GS
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
= C
+ C
,
C
ds
SHORTED
iss
gs
gd
C
= C
rss
gd
C
= C
+ C
oss
ds gd
Ciss
Coss
5
Crss
2
10
0
0
20
Q
40
60
80
100
1
10
100
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.00
100.00
10.00
1.00
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
T =
175°C
J
1msec
1
T
= 25°C
J
0.1
0.01
10msec
DC
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.10
0.01
0.1
1
10
100
1000
0.0
0.5
1.0
1.5
2.0
V
, Drain-to-Source Voltage (V)
V
, Source-toDrain Voltage (V)
DS
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRF3710S/LPbF
60
50
40
30
20
10
0
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
( C)
T
, Case Temperature
C
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b.
Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1
P
DM
0.05
SINGLE PULSE
(THERMAL RESPONSE)
t
1
0.02
0.01
t
2
Notes:
1. Duty factor D =
t /
t
1
2
2. Peak T
= P
x Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRF3710S/LPbF
550
440
330
220
110
0
I
15V
D
TOP
11A
20A
28A
BOTTOM
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
V
G
S
Ω
0.01
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
( C)
Starting T
, Junction Temperature
J
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b.
Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.
T
.
50K
Ω
.2
µ
F
12V
.3
µ
F
Q
G
+
V
GS
V
DS
D.U.
T
.
–
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
6
IRF3710S/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
–
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current T
r
a
nsformer
D.U.T
*
+
–
–
+
R
G
•
dv/dt controlled by R
G
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
+
–
V
DD
V
GS
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P
.
W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.
T
. I
W
aveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple
≤
5%
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
Fig 14.
For N-channel
HEXFET
®
power MOSFETs
7
IRF3710S/LPbF
D
2
Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D
2
Pak (TO-263AB) Part Marking Information
8
IRF3710S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
9
IRF3710S/LPbF
D
2
Pak
T
a
pe & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
26.40 (1.039)
24.40 (.961)
4
3
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
10
