Infineon-Technologies-IRF3710PbF
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PD – 94954D
IRF3710PbF
HEXFET
®
Power MOSFET
l
Advanced Process Technology
l
Ultra Low On-Resistance
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
D
V
DSS
= 100V
R
DS(on)
= 23m
Ω
G
l
Fully Avalanche Rated
l
Lead-Free
I
D
= 57A
S
Description
Advanced HEXFET
®
Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance
per silicon area.
This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
The TO-220 package is universally preferred for all commercial-industrial
applications at power dissipation levels to approximately 50 watts.
The low
therma
l
r
esistanc
e
a
n
d
l
o
w
p
ackag
e
c
os
t
o
f
t
h
e
T
O-22
0
c
ontribut
e
t
o
i
t
s
w
ide
acceptance throughout the industry.
TO-220AB
Absolute Maximum Ratings
Parameter
Max.
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
57
40
A
180
P
D
@T
C
= 25°C
Power Dissipation
200
W
W/°C
V
Linear Derating Factor
1.3
V
GS
I
AR
Gate-to-Source Voltage
± 20
Avalanche Current
28
20
A
E
AR
dv/dt
T
J
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
mJ
V/ns
5.8
-55 to
+ 175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
Units
R
θ
JC
R
θ
CS
R
θ
JA
0.75
–––
62
°C/W
1
07/23/10
IRF3710PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
100 –––
–––
Conditions
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
––– 0.13
––– V/°C
Reference to 25°C, I
D
= 1mA
R
DS(on)
V
GS(th)
g
fs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 23
m
Ω
V
GS
= 10V, I
D
=28A
2.0
32
––– 4.0
––– –––
V
S
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 25V, I
D
= 28A
V
DS
= 100V, V
GS
= 0V
V
DS
= 80V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
Forward Transconductance
––– ––– 25
––– –––
250
––– –––
100
––– –––
-100
––– –––
130
––– ––– 26
––– ––– 43
I
DSS
Drain-to-Source Leakage Current
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
I
GSS
V
GS
= -20V
Q
g
I
D
= 28A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
nC V
DS
= 80V
V
GS
= 10V, See Fig. 6 and 13
–––
–––
–––
–––
12 –––
58 –––
45 –––
47 –––
V
DD
= 50V
I
D
= 28A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 2.5
Ω
V
GS
= 10V, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
V
GS
= 0V
D
S
4.5
L
D
L
S
Internal Drain Inductance
Internal Source Inductance
–––
–––
–––
–––
nH
G
7.5
C
iss
C
oss
C
rss
E
AS
Input Capacitance
––– 3130
–––
––– 410
–––
Output Capacitance
V
DS
= 25V
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
–––
72 –––
pF
ƒ = 1.0MHz, See Fig. 5
––– 1060
ꢀ
280
mJ I
AS
= 28A, L = 0.70mH
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
D
I
S
57
––– –––
––– –––
showing the
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
230
S
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.2
––– 140 220
V
T
J
= 25°C, I
S
= 28A, V
GS
= 0V
T
J
= 25°C, I
F
= 28A
ns
Q
rr
t
on
––– 670
1010 nC di/dt
= 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
I
SD
≤
28A
,
di/d
t
≤
380A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
175°C
,
Repetitive rating;
pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width
≤
400µs; duty cycle
≤
2%.
ꢀ
This is a typical value at device destruction and represents
operation outside rated limits.
Starting T
J
= 25°C, L = 0.70mH
R
G
= 25
Ω
, I
AS
= 28A, V
GS
=10V (See Figure 12)
This is a calculated value limited to T
J
= 175°C .
2
IRF3710PbF
1000
100
10
1000
100
10
VGS
16V
VGS
16V
TOP
TOP
10V
10V
7.0V
6.0V
5.0V
4.5V
4.0V
7.0V
6.0V
5.0V
4.5V
4.0V
BOTTOM 3.5V
BOTTOM 3.5V
3.5V
3.5V
1
1
20µs PULSE WIDTH
Tj = 25°C
20µs PULSE WIDTH
Tj = 175°C
0.1
0.1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
3.0
1000.00
57A
=
I
D
2.5
2.0
1.5
1.0
0.5
0.0
100.00
10.00
1.00
T
= 175°C
J
T
J
= 25°C
V
=
50V
DS
20µs PULSE WIDTH
V
= 10V
GS
0.10
-60 -40 -20
0
20 40 60 80
100 120 140 160 180
°
3.0
4.0
5.0
6.0
7.0
8.0
9.0
T ,
Junction Temperature
( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRF3710PbF
12
10
7
100000
D
I
=
28A
V
C
= 0V,
f = 1 MHZ
GS
V
V
V
= 80V
= 50V
= 20V
DS
DS
DS
= C
+ C
,
C
ds
SHORTED
iss
gs
gd
C
= C
rss
gd
C
= C
+ C
10000
1000
100
oss
ds gd
Ciss
Coss
5
Crss
2
10
0
0
20
Q
40
60
80
100
1
10
100
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000.00
100.00
10.00
1.00
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T =
175°C
J
100µsec
1msec
T
= 25°C
J
10msec
1
Tc = 25°C
Tj = 175°C
Single Pulse
V
= 0V
GS
0.10
0.1
0.0
0.5
1.0
1.5
2.0
1
10
100
1000
V
, Source-toDrain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRF3710PbF
60
50
40
30
20
10
0
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
175
°
( C)
T
, Case Temperature
C
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b.
Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.1
P
DM
0.05
SINGLE PULSE
(THERMAL RESPONSE)
t
1
0.02
0.01
t
2
Notes:
1. Duty factor D =
t /
t
1
2
2. Peak T
= P
x Z
+ T
J
DM
thJC
C
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRF3710PbF
550
440
330
220
110
0
I
15V
D
TOP
11A
20A
28A
BOTTOM
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
V
G
S
Ω
0.01
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
( C)
Starting T
, Junction Temperature
J
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b.
Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.
T
.
50K
Ω
.2
µ
F
12V
.3
µ
F
Q
G
+
V
GS
V
DS
D.U.
T
.
–
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
6
IRF3710PbF
Peak Diode Recovery dv/dt Test Circuit
+
–
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.T
*
+
–
–
+
R
G
•
dv/dt controlled by R
G
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
+
–
V
DD
V
GS
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P
.
W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.
T
. I
W
aveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
]
[
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple
≤
5%
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
Fig 14.
For N-channel
HEXFET
®
power MOSFETs
7
IRF3710PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220A
B
P
ar
t
M
arkin
g
I
nformation
E
X
AM
P
LE: THIS
IS
A
N
I
RF1010
L
O
T CODE 1
7
89
P
A
R
T NU
M
B
ER
IN
T
ER
N
A
T
I
O
NAL
RE
C
T
I
F
I
ER
L
O
GO
A
S
SE
M
B
LED
O
N WW 19, 2000
IN
T
HE
A
S
SE
M
B
LY LINE “
C
”
DA
T
E
C
ODE
YE
A
R 0 =
2
000
W
E
EK 19
Note: “P” in
a
s
s
e
mb
l
y lin
e
p
o
s
i
t
i
o
n
i
n
d
i
c
ates
“
L
e
ad
– F
r
e
e”
AS S E M
B
L Y
L
O
T CODE
LINE C
TO-220AB package is not recommended for Surface Mount Application
Notes:
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
8
IMPORTANT NOTICE
T
h
e information given in this document shall in no
For further information on the product, technology,
event be regarded as a guarantee of conditions or
delivery terms and conditions and prices please
characteristics (“
B
e
schaffenheitsgarantie”) .
contact your nearest
I
n
fineon
T
e
chnologies office
W
i
t
h respect to any e
x
a
mples, hints or any typical
v
a
lues stated herein and/or any information
regarding the application of the product,
I
n
fineon
T
e
chnologies hereby disclaims any and all
warranties and liabilities of any kind, including
without limitation warranties of non-infringement
of intellectual property rights of any third party.
WARNINGS
D
u
e to technical requirements products may
contain dangerous substances.
F
o
r information on
the types in question please contact your nearest
I
n
fineon
T
e
chnologies office.
In
a
ddition, any information given in this document
is subject to customer
’
s
c
ompliance with its
obligations stated in this document and any
applicable legal requirements, norms and
standards concerning customer
’
s
p
roducts and any
use of the product of
I
n
fineon
T
e
chnologies in
customer
’
s
a
pplications.
Exc
e
pt as otherwise explicitly approved by
I
n
fineon
T
e
chnologies in a written document signed by
authorized
representatives
of
I
n
fineon
T
e
chnologies,
I
n
fineon
T
e
chnologies’ products may
not be used in any applications where a failure of
the product or any consequences of the use thereof
can reasonably be e
x
p
ected to result in personal
injury.
T
h
e data contained in this document is exclusively
intended for technically trained staff.
I
t is
t
he
responsibility of customer
’
s
t
echnical departments
to evaluate the suitability of the product for the
intended application and the completeness of the
product information given in this document with
respect to such application.
