Infineon-Technologies-IRF3710STRLPBF

PD – 94201B  

IRF3710S  

IRF3710L  

HEXFET

®

Power MOSFET  

l

Advanced Process Technology  

l

Ultra Low On-Resistance  

l

Dynamic dv/dt Rating  

D

V

DSS

= 100V  

l

175°C Operating Temperature  

l

Fast Switching  

l

Fully Avalanche Rated  

R

DS(on)

= 23m

Ω  

G

I

D

= 57A  

S

Description  

Advanced HEXFET

®

Power MOSFETs from International Rectifier utilize  

advanced processing techniques to achieve extremely low on-resistance per  

silicon area.

 

This benefit, combined with the fast switching speed and  

ruggedized device design that HEXFET power MOSFETs are well known for,  

provides the designer with an extremely efficient and reliable device for use in  

a wide variety of applications.  

The D

2

Pak is a surface mount power package capable of accommodating die  

sizes up to HEX-4. It provides the highest power capability and the lowest  

possible on-resistance in any existing surface mount package. The D

2

Pak is  

suitable for high current applications because of its low internal connection  

resistance and can dissipate up to 2.0W in a typical surface mount application.  

The through-hole version (IRF3710L) is available for low-profile applications.  

D

2

Pak  

IRF3710S  

TO-262  

IRF3710L  

Absolute Maximum Ratings  

Parameter  

Max.  

57  

40  

Units  

I

D

@ T

C

= 25°C  

I

D

@ T

C

= 100°C  

I

DM  

Continuous Drain Current, V

GS

@ 10V

‡

 

Continuous Drain Current, V

GS

@ 10V

‡  

Pulsed Drain Current

‡  

A

180  

200  

1.3  

± 20  

28  

P

D

@T

C

= 25°C  

Power Dissipation  

W

W/°C  

V

Linear Derating Factor  

V

GS  

I

AR  

Gate-to-Source Voltage  

Avalanche Current

  

A

E

AR  

dv/dt  

T

J  

Repetitive Avalanche Energy

  

Peak Diode Recovery dv/dt

ƒ‡  

Operating Junction and  

20  

mJ  

V/ns  

5.8  

-55 to

 

+ 175  

T

STG  

Storage Temperature Range  

Soldering Temperature, for 10 seconds  

°C  

300 (1.6mm from case )  

Thermal Resistance  

Parameter  

Junction-to-Case  

Typ.  

–––  

Max.  

0.75  

Units  

°C/W  

R

θ

JC  

R

θ

JA  

Junction-to-Ambient

(PCB Mounted,steady-state)**  

–––  

40  

1

3/24/05  

IRF3710S/IRF3710L  

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)  

Parameter  

Drain-to-Source Breakdown Voltage  

Min. Typ. Max. Units  

100 –––

 

–––  

Conditions  

V

GS

= 0V, I

D

= 250µA  

V

(BR)DSS  

V

∆

V

(BR)DSS

/

∆

T

J

Breakdown Voltage Temp. Coefficient

 

––– 0.13

 

––– V/°C

 

Reference to 25°C, I

D

= 1mA

‡  

R

DS(on)  

V

GS(th)  

g

fs  

Static Drain-to-Source On-Resistance  

Gate Threshold Voltage  

––– ––– 23  

m

Ω

V

GS

= 10V, I

D

=28A

„  

2.0  

32  

––– 4.0  

––– –––  

V

S

V

DS

= V

GS

, I

D

= 250µA  

V

DS

= 25V, I

D

= 28A

„‡  

V

DS

= 100V, V

GS

= 0V  

V

DS

= 80V, V

GS

= 0V, T

J

= 150°C  

V

GS

= 20V  

Forward Transconductance  

––– ––– 25  

––– –––

 

250  

––– –––

 

100  

––– –––

 

-100  

––– –––

 

130  

––– ––– 26  

––– ––– 43  

I

DSS  

Drain-to-Source Leakage Current  

µA  

nA  

Gate-to-Source Forward Leakage  

Gate-to-Source Reverse Leakage  

Total Gate Charge  

I

GSS  

V

GS

= -20V  

Q

g  

I

D

= 28A  

Q

gs  

Q

gd  

t

d(on)  

t

r  

Gate-to-Source Charge  

Gate-to-Drain (“Miller”) Charge  

Turn-On Delay Time  

Rise Time  

nC V

DS

= 80V  

V

GS

= 10V, See Fig. 6 and 13

‡  

–––  

–––  

–––  

–––  

12 –––  

58 –––  

45 –––  

47 –––  

V

DD

= 50V  

I

D

= 28A  

ns  

t

d(off)  

t

f  

Turn-Off Delay Time  

Fall Time  

R

G

= 2.5

Ω  

V

GS

= 10V, See Fig. 10

„‡  

Between lead,  

6mm (0.25in.)  

D

S

4.5  

L

D  

L

S  

Internal Drain Inductance  

Internal Source Inductance  

–––  

–––  

–––  

–––  

nH  

G

from package  

7.5  

and center of die contact  

V

GS

= 0V  

C

iss  

C

oss  

C

rss  

E

AS  

Input Capacitance  

––– 3130

 

–––  

––– 410

 

–––  

Output Capacitance  

V

DS

= 25V  

Reverse Transfer Capacitance  

Single Pulse Avalanche Energy

‚‡  

–––  

72 –––  

pF  

ƒ = 1.0MHz, See Fig. 5

‡  

––– 1060

ꢀ

280

†

mJ I

AS

= 28A, L = 0.70mH  

Source-Drain Ratings and Characteristics  

Parameter  

Continuous Source Current  

(Body Diode)  

Min. Typ. Max. Units  

Conditions  

MOSFET symbol  

D

S

I

S  

57  

––– –––  

––– –––  

showing the  

A

G

I

SM  

Pulsed Source Current  

(Body Diode)

  

integral reverse  

p-n junction diode.  

230  

V

SD  

t

rr  

Diode Forward Voltage  

Reverse Recovery Time  

Reverse Recovery Charge  

Forward Turn-On Time  

––– ––– 1.2  

––– 140 220  

V

T

J

= 25°C, I

S

= 28A, V

GS

= 0V

„  

T

J

= 25°C, I

F

= 28A  

ns  

Q

rr  

t

on  

––– 670

 

1010 nC di/dt

 

= 100A/µs

„  

Intrinsic turn-on time is negligible (turn-on is dominated by L

S

+L

D

)  

Notes:  

ꢀ

This is a typical value at device destruction and represents  

operation outside rated limits.  

†

This is a calculated value limited to T

J

= 175°C .  

‡

Uses IRF3710 data and test conditions.  



Repetitive rating;

 

pulse width limited by  

max. junction temperature. (See fig. 11).  

‚

Starting T

J

= 25°C, L = 0.70mH, R

G

= 25

Ω

,  

I

AS

= 28A, V

GS

=10V. (See Figure 12).  

ƒ

I

SD

≤

28A

,

di/d

t

≤

380A/µs, V

DD

≤

V

(BR)DSS  

T

J

≤

175°C.  

,

**When mounted on 1″ square PCB (FR-4 or G-10 Material). For  

recommended footprint and soldering techniques refer to application  

note #AN-994.  

„

Pulse width

≤

400µs; duty cycle

≤

2%.  

2

IRF3710S/IRF3710L  

1000  

100  

10  

1000  

VGS  

16V  

VGS  

16V  

TOP  

TOP  

10V  

10V  

7.0V  

6.0V  

5.0V  

4.5V  

4.0V  

7.0V  

6.0V  

5.0V  

4.5V  

4.0V  

100  

10  

1

BOTTOM 3.5V  

BOTTOM 3.5V  

3.5V  

3.5V  

1

20µs PULSE WIDTH  

Tj = 25°C  

20µs PULSE WIDTH  

Tj = 175°C  

0.1  

0.1  

0.1  

1

10  

100  

0.1  

1

10  

100  

V

, Drain-to-Source Voltage (V)  

V

, Drain-to-Source Voltage (V)  

DS  

DS  

Fig 1.

 

Typical Output Characteristics  

Fig 2.

 

Typical Output Characteristics  

3.0  

1000.00  

57A  

=

I

D

2.5  

2.0  

1.5  

1.0  

0.5  

0.0  

100.00  

10.00  

1.00  

T

= 175°C  

J

T

J

= 25°C  

V

= 15V  

DS  

20µs PULSE WIDTH  

V

= 10V  

GS  

0.10  

-60 -40 -20  

0

20 40 60 80

 

100 120 140 160 180  

°

3.0  

4.0  

5.0  

6.0  

7.0  

8.0  

9.0  

T ,

 

Junction Temperature  

( C)  

J

V

, Gate-to-Source Voltage (V)  

GS  

Fig 3.

 

Typical Transfer Characteristics  

Fig 4.

 

Normalized On-Resistance  

Vs. Temperature  

3

IRF3710S/IRF3710L  

12.0  

10.0  

8.0  

100000  

V

C

= 0V,  

f = 1 MHZ  

GS  

I

= 28A  

D

= C

 

+ C  

,

C

ds  

SHORTED  

iss  

gs  

gd  

C

= C  

V

V

V

= 80V  

= 50V  

= 20V  

rss  

gd  

DS  

DS  

DS  

C

= C

 

+ C  

10000  

1000  

100  

oss  

ds gd  

Ciss  

6.0  

Coss  

4.0  

Crss  

2.0  

0.0  

10  

0

20  

40  

60  

80  

100  

1

10  

100  

Q

Total Gate Charge (nC)  

V

, Drain-to-Source Voltage (V)  

G

DS  

Fig 6.

 

Typical Gate Charge Vs.  

Fig 5.

 

Typical Capacitance Vs.  

Gate-to-Source Voltage  

Drain-to-Source Voltage  

1000.00  

100.00  

10.00  

1.00  

1000  

100  

10  

OPERATION IN THIS AREA  

LIMITED BY R  

(on)  

DS  

T =

 

175°C  

J

100µsec  

1msec  

T

= 25°C  

J

10msec  

1

Tc = 25°C  

Tj = 175°C  

Single Pulse  

V

= 0V  

GS  

0.10  

0.1  

0.0  

0.5  

1.0  

1.5  

2.0  

1

10  

100  

1000  

V

, Source-toDrain Voltage (V)  

V

, Drain-toSource Voltage (V)  

SD  

DS  

Fig 8.

 

Maximum Safe Operating Area  

Fig 7.

 

Typical Source-Drain Diode  

Forward Voltage  

4

IRF3710S/IRF3710L  

60  

50  

40  

30  

20  

10  

0

R

D  

V

DS  

V

GS  

D.U.T.  

R

G  

–

V

GS  

Pulse Width

≤ 1

µs  

Duty Factor

≤ 0.1 %  

Fig 10a.

 

Switching Time Test Circuit  

V

DS  

90%  

25  

50  

75  

100  

125  

150  

175  

°

( C)  

T

, Case Temperature  

C

10%  

V

GS  

Fig 9.

 

Maximum Drain Current Vs.  

t

t

r

t

t

f

d(on)  

d(off)  

Case Temperature  

Fig 10b.

 

Switching Time Waveforms  

1

D = 0.50  

0.20  

0.10  

0.1  

P

DM  

0.05  

SINGLE PULSE  

(THERMAL RESPONSE)  

t

1

0.02  

0.01  

t

2

Notes:  

1. Duty factor D =  

t /

 

t  

1

2

2. Peak T  

= P  

x Z  

+ T  

J

DM  

thJC  

C

0.01  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

t ,

 

Rectangular Pulse Duration (sec)  

1

Fig 11.

 

Maximum Effective Transient Thermal Impedance, Junction-to-Case  

5

IRF3710S/IRF3710L  

550  

440  

330  

220  

110  

0

I

15V  

D

TOP  

11A  

20A  

28A  

BOTTOM  

DRIVER  

+

L

V

DS  

D.U.T  

AS  

R

G

V

DD  

–

I

A

2

V

0

G

V

S  

Ω

0.01  

t

p

Fig 12a.

 

Unclamped Inductive Test Circuit  

V

(BR)DSS  

t

p

25  

50  

75  

100  

125  

150  

175  

°

( C)  

Starting T

 

, Junction Temperature  

J

Fig 12c.

 

Maximum Avalanche Energy  

Vs. Drain Current  

I

AS  

Fig 12b.

 

Unclamped Inductive Waveforms  

Current Regulator  

Same Type as D.U.

T

.  

50K

Ω  

.2

µ

F  

12V  

.3

µ

F  

Q

G

+

V

GS  

V

DS  

D.U.

T

.  

–

Q

Q

GD  

GS  

V

GS  

V

G

3mA  

I

I

D

G

Current Sampling Resistors  

Charge  

Fig 13b.

 

Gate Charge Test Circuit  

Fig 13a.

 

Basic Gate Charge Waveform  

6

IRF3710S/IRF3710L  

Peak Diode Recovery dv/dt Test Circuit  

+

ƒ

–

Circuit Layout Considerations  

•

Low Stray Inductance  

•

Ground Plane  

•

Low Leakage Inductance  

Current Transformer  

D.U.T

*  

+

‚

–

„

–

+



R

G  

•

dv/dt controlled by R

G  

•

I

SD

controlled by Duty Factor “D”  

•

D.U.T. – Device Under Test  

+

–

V

DD  

V

GS  

*

Reverse Polarity of D.U.T for P-Channel  

Driver Gate Drive  

P

.

W.  

Period  

Period  

D =  

P.W.  

V

[

=10V  

] ***  

GS  

D.U.

T

. I

 

W

aveform  

SD  

Reverse  

Recovery  

Current  

Body Diode Forward  

Current  

di/dt  

D.U.

T

. V

 

W

aveform  

DS  

Diode Recovery  

dv/dt  

V

DD  

]

[

Re-Applied  

Voltage  

Body Diode  

Forward Drop  

Inductor Curent  

I

[

]

SD  

Ripple

≤

5%  

***

V

GS

= 5.0V for Logic Level and 3V Drive Devices  

Fig 14.

For N-channel

HEXFET

®

power MOSFETs  

7

IRF3710S/IRF3710L  

D

2

Pak Package Outline  

Dimensions are shown in millimeters (inches)  

D

2

Pak Part Marking Information  

8

IRF3710S/IRF3710L  

TO-262 Package Outline  

Dimensions are shown in millimeters (inches)  

TO-262 Part Marking Information  

OR  

9

IRF3710S/IRF3710L  

D

2

Pak

T

a

pe & Reel Information  

Dimensions are shown in millimeters (inches)  

TRR  

1.60 (.063)  

1.50 (.059)  

1.60 (.063)  

1.50 (.059)  

4.10 (.161)  

3.90 (.153)  

0.368 (.0145)  

0.342 (.0135)  

11.60 (.457)  

11.40 (.449)  

FEED DIRECTION  

TRL  

1.85 (.073)  

1.65 (.065)  

24.30 (.957)  

23.90 (.941)  

15.42 (.609)  

15.22 (.601)  

1.75 (.069)  

1.25 (.049)  

10.90 (.429)  

10.70 (.421)  

4.72 (.136)  

4.52 (.178)  

16.10 (.634)  

15.90 (.626)  

FEED DIRECTION  

13.50 (.532)  

12.80 (.504)  

27.40 (1.079)  

23.90 (.941)  

4

330.00  

(14.173)  

MAX.  

60.00 (2.362)  

MIN.  

30.40 (1.197)  

MAX.  

NOTES :  

1. COMFORMS

 

TO EIA-418.  

2. CONTROLLING

 

DIMENSION: MILLIMETER.  

3. DIMENSION

 

MEASURED @ HUB.  

4. INCLUDES

 

FLANGE DISTORTION @ OUTER EDGE.  

26.40 (1.039)  

24.40 (.961)  

4

3

Data and specifications subject to change without notice.  

This product has been designed and qualified for the Industrial market.  

Qualification Standards can be found on IR’s Web site.  

IR WORLD HEADQUARTERS:

233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  

TAC Fax: (310) 252-7903  

.

03/05  

10