Infineon-Technologies-IRF5210LPBF
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PD – 97049B
IRF5210SPbF
IRF5210LPbF
HEXFET
®
Power MOSFET
l
Advanced Process Technology
l
Ultr
a
L
o
w
O
n-Resistance
l
150°
C
O
peratin
g
T
emperature
l
Fast Switching
l
Repetitive Avalanche Allowed up to Tjmax
l
Some Parameters are Different from
IRF5210S/L
D
V
DSS
= -100V
R
DS(on)
= 60m
Ω
G
I
D
= -38A
S
l
P-Channel
l
Lead-Free
D
D
Description
Features of this design
are a 150°C junction
operating temperature, fast switching speed and
improve
d
r
epetitiv
e
a
valanch
e
r
atin
g
.
T
hes
e
f
ea-
tures combine to make this design an extremely
efficient and reliable device for use in
a wide
variety of other applications.
S
S
D
D
G
G
D
2
Pak
TO-262
IRF5210LPbF
IRF5210SPbF
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Parameter
Max.
-38
Units
A
I
I
I
@ T
C
= 25°C
@ T
C
= 100°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, VGS @ -10V
Pulsed Drain Current
D
D
-24
-140
3.1
DM
P
P
@T
A
= 25°C
@T
C
= 25°C
Maximum Power Dissipation
W
D
D
Maximum Power Dissipation
170
Linear Derating Factor
Gate-to-Source Voltage
1.3
± 20
W/°C
V
V
GS
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
120
-23
17
mJ
A
Repetitive Avalanche Energy
E
AR
mJ
Peak Diode Recovery dv/dt
Operating Junction and
dv/dt
T
J
-7.4
V/ns
°C
-55 to
+ 150
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
300 (1.6mm from case )
Thermal Resistance
Parameter
Typ.
–––
Max.
0.75
40
Units
°C/W
R
θ
JC
R
θ
JA
Junction-to-Case
–––
Junction-to-Ambient (PCB Mount, steady state)
1
08/04/09
IRF5210S/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
Units
-100 –––
–––
Conditions
V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
∆Β
V
DSS
/
∆
T
J
R
DS(on)
V
Breakdown Voltage Temp. Coefficient
––– -0.11 ––– V/°C
Reference to 25°C, I
D
= -1mA
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
-2.0
9.5
–––
–––
–––
–––
–––
–––
–––
150
22
60
-4.0
–––
-50
V
GS
= 10V, I
D
= -38A
V
DS
= V
GS
, I
D
= -250µA
DS
= -50V, I
D
= -23A
µA V
DS
= -100V, V
GS
= 0V
DS
= -80V, V
GS
= 0V, T
J
= 125°C
nA V
GS
= 20V
GS
= -20V
Ω
V
m
V
GS(th)
gfs
I
DSS
Forward Transconductance
S
V
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-250
100
-100
230
33
V
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
Q
g
Q
gs
Q
gd
t
d(on)
t
r
nC I
D
= -23A
V
DS
= -80V
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
81
120
–––
–––
–––
–––
–––
V
GS
= -10V
DD
= -50V
14
ns
V
Rise Time
63
I
D
= -23A
t
d(off)
t
f
Ω
Turn-Off Delay Time
72
R
G
= 2.4
Fall Time
55
V
GS
= -10V
L
D
Internal Drain Inductance
4.5
nH Between
lead,
6mm (0.25in.)
from package
L
S
Internal Source Inductance
–––
7.5
–––
and center of die contact
pF V
GS
= 0V
DS
= -25V
C
iss
C
oss
C
rss
Input Capacitance
––– 2780 –––
Output Capacitance
–––
–––
800
430
–––
–––
V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
MOSFET symbol
I
S
Continuous Source Current
–––
–––
-38
(Body Diode)
Pulsed Source Current
A
V
showing the
integral reverse
I
SM
–––
–––
-140
(Body Diode)
Diode Forward Voltage
p-n junction diode.
V
SD
T =
25°C, I
= -23A, V
= 0V
–––
–––
–––
170
-1.6
260
J
S
GS
t
rr
Q
rr
T =
25°C, I
= -23A, V
DD
= -25V
J F
di/dt = -100A/µs
Reverse Recovery Time
Reverse Recovery Charge
ns
nC
––– 1180
1770
t
on
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Forward Turn-On Time
Notes:
Pulse width
≤
300µs; duty cycle
≤
2%.
Repetitive rating;
pulse width limited by
max. junction temperature. ( See fig. 11)
Starting T
J
= 25°C, L = 0.46mH
R
G
= 25
Ω
, I
AS
= -23A. (See Figure 12)
I
SD
≤
-23A, di/dt
≤
-650A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
150°C.
ꢀ
When mounted on 1″ square PCB (FR-4or G-10
Material). For
recommended footprint and soldering
techniques refer to application note #AN-994.
,
2
IRF5210S/LPbF
1000
100
10
1000
100
10
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
TOP
TOP
BOTTOM
-4.5V
BOTTOM
-4.5V
-4.5V
1
1
60µs PULSE WIDTH
Tj = 25°C
60µs PULSE WIDTH
Tj = 150°C
≤
≤
0.1
0.1
0.1
1
10
100
0.1
1
10
100
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
100
10
2.0
I
= -38A
D
V
= -10V
GS
T
= 25°C
T
J
1.5
1.0
0.5
= 150°C
J
1
V
= -50V
DS
≤
60µs PULSE WIDTH
0.1
2
4
6
8
10
12
14
-60 -40 -20
0 20
40 60 80
100120140160180
, Junction Temperature (°C)
T
J
-V ,
Gate-to-Source Voltage (V)
GS
Fig 4.
Normalized On-Resistance
Fig 3.
Typical Transfer Characteristics
vs
.
T
emperature
3
IRF5210S/LPbF
100000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I =
-23A
D
C
C
C
+ C
, C
SHORTED
ds
iss
gs
gd
V
V
V
= -80V
= -50V
= -20V
= C
DS
DS
DS
rss
oss
gd
= C
+ C
ds
gd
10000
1000
100
C
C
6.0
iss
oss
4.0
C
rss
2.0
0.0
1
10
-V ,
Drain-to-Source Voltage (V)
100
0
25
Q
50
75
100
125
150
, Total
Gate Charge (nC)
DS
G
Fig 5.
Typical Capacitance vs.
Fig 6.
Typical Gate Charge vs.
Drain-to-Sourc
e
V
oltage
Gate-to-Sourc
e
V
oltage
1000
100
10
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 150°C
J
T
= 25°C
J
100µsec
1
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
V
= 0V
GS
0.1
1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
1
10
100
1000
-V ,
Source-to-Drain Voltage (V)
SD
-V ,
Drain-to-Source Voltage (V)
DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
4
IRF5210S/LPbF
R
D
V
DS
40
35
30
25
20
15
10
5
V
GS
D.U.T.
R
G
–
+
V
DD
-10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
t
t
r
t
t
f
d(on)
d(off)
V
GS
10%
0
25
50
T
75
100
125
150
, Case Temperature (°C)
C
90%
V
DS
Fig 10b.
Switching Time Waveforms
Fig 9.
Maximum Drain Current vs.
Cas
e
T
emperature
1
D = 0.50
0.20
0.10
0.1
0.01
R
1
R
1
R
2
R
2
R
3
R
3
τι
(sec)
Ri (°C/W)
τ
J
τ
J
τ
τ
0.05
C
τ
0.128309 0.000069
0.377663 0.001772
0.244513 0.010024
τ
1
τ
1
τ
2
τ
2
3
τ
3
0.02
0.01
Ci=
τ
i
/
Ri
Ci=
τ
i
/
Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRF5210S/LPbF
L
V
DS
500
450
400
350
300
250
200
150
100
50
I
D.U.T
AS
R
D
G
V
DD
A
TOP
-8.7A
-14A
BOTTOM -23A
I
DRIVER
-20V
0.01
Ω
t
p
15V
Fig 12a.
Unclamped Inductive Test Circuit
I
AS
0
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
J
Fig 13.
Maximum Avalanche Energy
vs
.
D
rai
n
C
urrent
t
p
V
(BR)DSS
Fig 12b.
Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.
T
.
50K
Ω
Q
G
.2
µ
F
12V
.3
µ
F
-10V
–
V
+
DS
Q
Q
GD
D.U.
T
.
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 14b.
Gate Charge Test Circuit
Fig 14a.
Basic Gate Charge Waveform
6
IRF5210S/LPbF
Peak Diode Recovery dv/dt Test Circuit
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.T
*
+
–
+
–
+
–
+
–
R
G
•
dv/dt controlled by R
G
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
V
DD
V
GS
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive
P
.
W.
Period
Period
D =
P.W.
[
] ***
=10V
V
GS
D.U.
T
. I
W
aveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
[
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple
≤
5%
[
]
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
Fi
g
1
5.
Fo
r
P
-Channe
l
H
EXFETS
7
IRF5210S/LPbF
D
2
Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D
2
Pak (TO-263AB) Part Marking Information
8
IRF5210S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
9
IRF5210S/LPbF
D
2
Pak (TO-263AB)
T
a
pe & Reel Information
Dimensions are shown in millimeters (inches)
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1.85 (.073)
1.65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
10
