Infineon-Technologies-IRF5801TRPBF
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PD-95474B
IRF5801PbF
SMPS MOSFET
HEXFET
®
Power MOSFET
Applications
l
High frequency DC-DC converters
V
DSS
200V
R
DS(on)
max
I
D
0.6A
2.2
W
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design, (See
App. Note AN1001)
l
Fully Characterized Avalanche Voltage
and Current
l
Lead-Free
TSOP-6
l
Halogen-Free
Absolute Maximum Ratings
Parameter
Max.
0.6
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
0.48
A
4.8
P
D
@T
A
= 25°C
Power Dissipation
2.0
W
W/°C
V
Linear Derating Factor
0.016
± 30
V
GS
dv/dt
T
J
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
9.6
V/ns
-55 to
+ 150
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
R
θ
JA
Parameter
Junction-to-Ambient
Typ.
–––
Max.
62.5
Units
°C/W
Notes
through
are on page 8
1
04/20/10
IRF5801PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max. Units
200 –––
–––
––– 0.26
––– V/°C Reference
to 25°C, I
D
= 1mA
Conditions
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– ––– 2.2
3.0 –––
5.5
Ω
V
V
GS
= 10V, I
D
= 0.36A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, V
GS
= 0V, T
J
= 150°C
V
GS
= 30V
––– ––– 25
––– –––
250
––– –––
100
––– –––
-100
I
DSS
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
I
GSS
V
GS
= -30V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max. Units
0.44 ––– –––
Conditions
V
DS
= 50V, I
D
= 0.36A
I
D
= 0.36A
g
fs
S
Q
g
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.9 –––
0.8 –––
2.2 –––
6.5 –––
8.0 –––
8.8 –––
19 –––
88 –––
18 –––
6.3 –––
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
nC V
DS
= 160V
V
GS
= 10V
V
DD
= 100V
I
D
= 0.36A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 53
Ω
V
GS
= 10V
V
GS
= 0V
C
iss
C
oss
C
rss
C
oss
C
oss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
V
DS
= 25V
pF
ƒ = 1.0MHz
––– 102
–––
V
GS
= 0V,
V
DS
= 1.0V,
ƒ = 1.0MHz
V
GS
= 0V,
V
DS
= 160V,
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to 160V
ꢀ
–––
–––
8.4 –––
26 –––
C
oss
eff.
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
Max.
9.9
Units
mJ
E
AS
I
AR
Avalanche Current
–––
0.6
A
Diode Characteristics
Parameter
Min. Typ. Max. Units
Conditions
D
S
I
S
Continuous Source Current
(Body Diode)
MOSFET symbol
1.8
––– –––
showing the
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
––– ––– 4.8
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.3
––– 45 –––
––– 54 –––
V
T
J
= 25°C, I
S
= 0.36A, V
GS
= 0V
ns
T
J
= 25°C, I
F
= 0.36A
Q
rr
nC di/dt
= 100A/µs
2
IRF5801PbF
10
10
VGS
15.0V
12.0V
10.0V
8.0V
VGS
15.0V
12.0V
10.0V
8.0V
TOP
TOP
7.5V
7.5V
7.0V
6.5V
7.0V
6.5V
1
1
BOTTOM 6.0V
BOTTOM 6.0V
6.0V
6.0V
0.1
0.01
0.1
0.01
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
10
3.0
0.6A
=
I
D
2.5
°
T =
150 C
J
2.0
1.5
1.0
0.5
0.0
1
°
T =
25 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
=
1
0V
GS
0.1
-60 -40 -20
0
20 40 60 80
100 120 140 160
°
6
7
8
9
10 11
12
T ,
Junction Temperature
( C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRF5801PbF
20
16
12
8
160
I =
D
0.36A
V
C
= 0V,
f = 1 MHZ
= C
+ C
, C
GS
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
SHORTED
iss
gs
gd ds
C
C
= C
rss
oss
gd
120
80
40
0
= C
+ C
ds gd
Ciss
Coss
Crss
4
0
1
10
100
1000
0
1
2
3
4
5
Q ,
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
10
100
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
1
10us
°
T =
150 C
J
1
100us
1ms
°
T =
25 C
J
0.1
0.01
10ms
°
T =
25 C
J
C
°
T =
150 C
Single Pulse
V
= 0 V
GS
0.9
0.1
1
10
100
1000
0.4
0.5
0.6
0.7
0.8
1.0
V
, Drain-to-Source Voltage (V)
DS
V
,Source-to-Drain Voltage (V)
SD
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
4
IRF5801PbF
R
D
0.6
0.5
0.4
0.3
0.2
0.1
0.0
V
DS
V
GS
10V
D.U.T.
R
G
+
V
DD
–
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T ,
Case Temperature (
C)
C
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b.
Switching Time Waveforms
100
D = 0.50
0.20
0.10
0.05
10
0.02
0.01
P
2
DM
1
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D
=
t
/ t
1
2. Peak T
=
P
J
x Z
+ T
thJC C
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRF5801PbF
2.500
2.250
2.000
1.750
1.500
12.000
10.000
8.000
6.000
4.000
2.000
0.000
VGS = 10V
I
= 0.6A
D
6.0 7.0 8.0 9.0
10.0 11.0 12.0 13.0 14.0 15.0
0
1
2
3
4
5
V
Gate -to -Source Voltage
(V)
GS,
I
, Drain Current ( A )
D
Fig 12.
On-Resistance Vs. Drain Current
Fig 13.
On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.
T
.
Q
G
50K
Ω
.3
µ
F
V
GS
.2
µ
F
12V
Q
Q
GD
GS
+
25
V
DS
I
D.U.
T
.
–
D
V
G
TOP
0.4A
0.7A
V
GS
3mA
Charge
20
15
10
5
BOTTOM 0.9A
I
I
D
G
Current Sampling Resistors
Fig 14a&b.
Basic Gate Charge Test Circuit
and Waveform
15V
V
(BR)DSS
DRIVER
L
t
p
V
DS
0
25
50
75
100
125
150
D.U.T
AS
R
G
+
–
V
DD
°
Starting T
, Junction Temperature
( C)
I
A
J
20V
Ω
0.01
t
p
I
AS
Fig 15c.
Maximum Avalanche Energy
Fig 15a&b.
Unclamped Inductive Test circuit
Vs. Drain Current
and Waveforms
6
IRF5801PbF
TSOP-6 Package Outline
TSOP-6 Part Marking Information
7
IRF5801PbF
TSOP-6
T
a
pe & Reel Information
Notes:
Repetitive rating;
pulse width limited by
When mounted on 1 inch square copper board, t < 10sec.
ꢀ
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
max. junction temperature.
Starting T
J
= 25°C, L = 27mH
R
G
= 25
Ω
, I
AS
= 0.36A.
.
I
SD
≤
0.36A, di/dt
≤
93A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
150°C.
Pulse width
≤
400µs; duty cycle
≤
2%.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
8
