Infineon-Technologies-IRF6218PBF
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P
D
–
95441
SMPS MOSFET
IRF6218PbF
HEXFET
®
Power MOSFET
Applications
V
DSS
R
DS(on)
max
I
D
l
Reset Switch for Active Clamp
Reset DC-DC converters
l
Lead-Free
150m @V
GS
= -10V
-150V
-27A
D
Benefits
l
Low Gate to Drain Charge to Reduce
Switching Losses
l
Fully Characterized Capacitance Including
Effective C
OSS
to Simplify Design (See
App. Note AN1001)
G
TO-220AB
S
l
Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Parameter
Max.
-150
± 20
-27
Units
V
DS
V
GS
Drain-to-Source Voltage
V
Gate-to-Source Voltage
I
I
I
@ T
= 25°C
A
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
D
D
C
@ T
= 100°C
C
-19
-110
250
DM
P
@T =
25°C
C
W
Maximum Power Dissipation
D
Linear Derating Factor
1.6
W/°C
dv/dt
T
J
Peak Diode Recovery dv/dt
Operating Junction and
8.2
V/ns
°C
-55 to
+ 175
T
Storage Temperature Range
STG
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 screw
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
Typ.
–––
Max.
0.61
–––
62
Units
R
θ
°C/W
JC
CS
JA
Junction-to-Case
R
θ
R
θ
0.50
–––
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Notes
through
are on page 7
1
06/28/04
IRF6218PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
Units
-150 ––– –––
Conditions
V
GS
= 0V, I
D
= -250µA
V
(BR)DSS
∆
V
(BR)DSS
/
∆
T
J
R
DS(on)
V
Breakdown Voltage Temp. Coefficient
––– -0.17 ––– V/°C
Reference to 25°C, I
D
= -1mA
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
-3.0
–––
–––
–––
–––
120
–––
–––
150
-5.0
-25
V
GS
= -10V, I
D
= -16A
V
DS
= V
GS
, I
D
= -250µA
DS
= -120V, V
GS
= 0V
V
DS
= -120V, V
GS
= 0V, T
J
= 150°C
GS
= -20V
V
GS
= 20V
m
Ω
V
V
GS(th)
I
DSS
Drain-to-Source Leakage Current
µA
V
––– -250
––– -100
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
nA
V
–––
100
Dynamic @ T
J
= 25°C (unless otherwise specified)
Parameter
Forward Transconductance
Total Gate Charge
Min. Typ. Max.
Units
Conditions
V
DS
= -50V, I
D
= -16A
D
= -16A
gfs
11
–––
71
21
32
21
70
35
30
–––
110
–––
–––
–––
–––
–––
–––
S
Q
g
–––
–––
–––
–––
–––
–––
–––
I
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
nC V
DS
= -120V
V
GS
= -10V
V
DD
= -75V
ns
I
D
= -16A
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 3.9
Ω
V
GS
= -10V
V
GS
= 0V
C
iss
C
oss
C
rss
C
oss
C
oss
C
oss
eff.
Input Capacitance
––– 2210 –––
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
–––
–––
370
89
–––
–––
V
DS
= -25V
pF ƒ
= 1.0MHz
V
GS
= 0V,
V
DS
= -1.0V,
ƒ = 1.0MHz
––– 2220 –––
–––
–––
170
340
–––
–––
V
GS
= 0V,
V
DS
= -120V,
ƒ = 1.0MHz
V
GS
= 0V, V
DS
= 0V to -120V
Avalanche Characteristics
Parameter
Single Pulse Avalanche Energy
Typ.
–––
–––
Max.
210
-16
Units
mJ
E
AS
I
AR
Avalanche Current
A
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
I
I
D
Continuous Source Current
–––
–––
-27
MOSFET symbol
S
(Body Diode)
Pulsed Source Current
A
showing the
integral reverse
G
–––
––– -110
SM
S
(Body Diode)
p-n junction diode.
V
t
Diode Forward Voltage
–––
–––
–––
–––
150
860
-1.6
–––
–––
V
T =
25°C, I
= -16A, V
= 0V
J S
GS
SD
Reverse Recovery Time
Reverse Recovery Charge
ns T
= 25°C, I
= -16A, V
DD
= -25V
J F
rr
di/dt = -100A/µs
Q
nC
rr
2
IRF6218PbF
1000
100
10
1000
100
10
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
VGS
-15V
-10V
-8.0V
-7.0V
-6.0V
-5.5V
-5.0V
-4.5V
TOP
TOP
BOTTOM
BOTTOM
1
-4.5V
-4.5V
1
0.1
0.01
60µs PULSE WIDTH
Tj = 175°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
0.1
0.1
1
10
100
0.1
1
10
100
-V ,
Drain-to-Source Voltage (V)
-V ,
Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.5
I
= -27A
D
V
= -10V
GS
T
= 25°C
J
2.0
1.5
1.0
0.5
T
= 175°C
J
10
V
= 50V
DS
≤
60µs PULSE WIDTH
1.0
2
4
6
8
10 12
-60 -40 -20
T
0
20 40 60 80
100 120 140 160 180
, Junction Temperature (°C)
J
-V ,
Gate-to-Source Voltage (V)
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
vs. Temperature
3
IRF6218PbF
100000
12.0
10.0
8.0
V
= 0V,
= C
f = 1 MHZ
GS
I =
-16A
D
C
C
C
+ C
, C
SHORTED
iss
gs
gd
ds
V
V
V
= 120V
= 75V
= 30V
DS
DS
DS
= C
rss
oss
gd
= C
+ C
ds
gd
10000
1000
100
C
C
iss
6.0
oss
4.0
C
rss
2.0
10
0.0
1
10
100
0
10 20 30 40 50 60 70 80
Total Gate Charge (nC)
-V ,
Drain-to-Source Voltage (V)
DS
Q
G
Fig 6.
Typical Gate Charge vs.
Fig 5.
Typical Capacitance vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
100
10
1000.00
100.00
10.00
1.00
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
= 175°C
J
100µsec
T
= 25°C
J
Tc = 25°C
Tj = 175°C
Single Pulse
1msec
V
= 0V
10msec
GS
1
0.10
1
10
100
1000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
-V ,
Drain-to-Source Voltage (V)
-V ,
Source-to-Drain Voltage (V)
SD
DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
4
IRF6218PbF
30
25
20
15
10
5
R
D
V
DS
V
GS
D.U.T.
R
G
–
+
V
DD
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
175
T
, Case Temperature (°C)
C
10%
Fig 9.
Maximum Drain Current vs.
V
GS
Ambient Temperature
t
t
r
t
t
f
d(on)
d(off)
Fig 10b.
Switching Time Waveforms
1
D = 0.50
0.20
0.10
0.05
0.1
0.01
R
1
R
1
R
2
R
2
R
3
R
3
Ri (°C/W)
τ
i (sec)
τ
J
τ
J
τ
τ
C
τ
0.264
0.206
0.140
0.000285
0.001867
0.013518
τ
1
τ
1
τ
0.02
0.01
2
τ
2
3
τ
3
Ci=
τ
i
/
Ri
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRF6218PbF
400
350
1000
900
800
700
600
500
400
300
200
100
0
300
V
GS
= -10V
I
= -27A
D
250
200
150
100
4
5
6
7
8
9
10
11
12
0
20
40
60
80
-I ,
Drain Current (A)
-V
Gate -to -Source Voltage
(V)
D
GS,
Fig 12.
On-Resistance vs. Drain Current
Fig 13.
On-Resistance vs. Gate Voltage
Current Regulator
Same Type as D.U.
T
.
Q
G
-V
GS
50K
Ω
.3
µ
F
.2
µ
F
12V
Q
Q
GD
GS
900
–
V
+
DS
V
D.U.
T
.
G
I
D
800
V
GS
TOP
-4.6A
-6.3A
Charge
-3mA
700
600
500
400
300
200
100
0
I
I
BOTTOM -16A
G
D
Current Sampling Resistors
Fig 14a&b.
Basic Gate Charge Test Circuit
and Waveform
L
V
DS
I
AS
D.U.T
R
G
V
DD
A
I
AS
DRIVER
-20V
0.01
t
Ω
p
25
50
75
100
125
150
175
t
p
15V
V
(BR)DSS
Starting T
, Junction Temperature (°C)
J
Fig 15c.
Maximum Avalanche Energy
Fig 15a&b.
Unclamped Inductive Test circuit
vs. Drain Current
and Waveforms
6
IRF6218PbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
10.54 (.415)
– B –
3.78 (.149)
10.29 (.405)
2.87 (.113)
2.62 (.103)
4.69 (.185)
4.20 (.165)
3.54 (.139)
1.32 (.052)
1.22 (.048)
– A –
6.47 (.255)
6.10 (.240)
4
15.24 (.600)
14.84 (.584)
LEAD ASSIGNMENTS
1.15 (.045)
MIN
HEXFET
IGBTs, CoPACK
1
2
3
1- GATE
1- GATE
2- DRAIN
2- COLLECTOR
3- EMITTER
4- COLLECTOR
3- SOURCE
4- DRAIN
14.09 (.555)
13.47 (.530)
4.06 (.160)
3.55 (.140)
0.93 (.037)
0.69 (.027)
0.55 (.022)
0.46 (.018)
3X
3X
1.40 (.055)
3X
1.15 (.045)
0.36 (.014)
M
B A M
2.92 (.115)
2.64 (.104)
2.54 (.100)
2X
NOTES:
1
2
DIMENSIONING & TOLERANCING PER ANSI Y14.5M, 1982.
CONTROLLING DIMENSION : INCH
3
4
OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB.
HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS.
TO-220AB Part Marking Information
E
X
AM
P
L
E
: T
H
I
S IS AN IRF1010
L
O
T CODE 1789
P
A
RT NUMBER
A
S
SEMBLED
O
N
W
W 19, 1997
IN THE A
S
SE
M
BLY
LINE
“
C
”
I
N
TERN
A
TI
O
N
A
L
REC
T
IFIER
L
O
GO
Note:
“P” in assembly line
position indicates “Lead-Free”
D
A
T E
C
ODE
Y
E
AR 7 =
1997
WEEK 19
A
S
SE
M
BLY
L
O
T CODE
LI
N
E C
Notes:
I
SD
≤
-17A, di/dt
≤
-520A/µs, V
DD
≤
V
(BR)DSS
, T
J
≤
175°C.
Pulse width
≤
300µs; duty cycle
≤
2%.
Repetitive rating;
pulse width limited by max. junction
temperature.
Starting T
J
= 25°C, L = 1.6mH, R
G
= 25
Ω
, I
AS
= -17A.
ꢀ
R is
measured at T
J
of approximately 90°C.
q
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
7
Note: For
the most current drawings please refer to the IR website at:
