Infineon-Technologies-IRF640NLPBF
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PD – 95046A
IRF640NPbF
IRF640NSPbF
l
Advanced Process Technology
l
Dynamic dv/dt Rating
l
175°C Operating Temperature
l
Fast Switching
l
Fully Avalanche Rated
l
Ease of Paralleling
IRF640NLPbF
HEXFET
®
Power MOSFET
D
V
DSS
= 200V
l
Simple Drive Requirements
R
DS(on)
= 0.15
Ω
G
l
Lead-Free
Description
I
D
= 18A
Fifth Generation HEXFET
®
Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low
on-resistance per
silicon area.
This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide
variety of applications.
S
The TO-220 package is universally preferred for all
commercial-industria
l
a
pplication
s
a
t
p
owe
r
d
issipatio
n
l
evels
to approximately 50 watts.
The low thermal resistance and
low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
The D
2
Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The
D
2
Pak is suitable for high current applications because of its
low internal connection resistance and can dissipate up to
2.0W in a typical surface mount application.
D
2
Pak
IRF640NSPbF
TO-262
IRF640NLPbF
TO-220AB
IRF640NPbF
The through-hole version (IRF640NL) is available for low-
profile application.
Absolute Maximum Ratings
Parameter
Max.
18
13
Units
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
A
72
P
D
@T
C
= 25°C
Power Dissipation
150
W
W/°C
V
Linear Derating Factor
1.0
V
GS
E
AS
I
AR
Gate-to-Source Voltage
± 20
247
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
18
E
AR
dv/dt
T
J
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
15
mJ
V/ns
8.1
-55 to +175
T
STG
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
1
07/23/10
IRF640N/S/LPbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
200 –––
–––
Conditions
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
––– 0.25
––– V/°C
Reference to 25°C, I
D
= 1mA
R
DS(on)
V
GS(th)
g
fs
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
––– –––
0.15
Ω
V
S
V
GS
= 10V, I
D
= 11A
2.0
6.8
––– 4.0
––– –––
V
DS
= V
GS
, I
D
= 250µA
Forward Transconductance
V
DS
= 50V, I
D
= 11A
V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, V
GS
= 0V, T
J
= 150°C
V
GS
= 20V
––– ––– 25
––– –––
250
––– –––
100
––– –––
-100
––– ––– 67
––– ––– 11
––– ––– 33
I
DSS
Drain-to-Source Leakage Current
µA
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
I
GSS
nA
V
GS
= -20V
Q
g
I
D
= 11A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
nC V
DS
= 160V
V
GS
= 10V, See Fig. 6 and 13
–––
–––
–––
–––
10 –––
19 –––
23 –––
5.5 –––
V
DD
= 100V
I
D
= 11A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 2.5
Ω
R
D
= 9.0
Ω
, See Fig. 10
Between lead,
6mm (0.25in.)
from package
D
S
L
D
L
S
Internal Drain Inductance
Internal Source Inductance
–––
–––
4.5
–––
nH
G
–––
7.5
and center of die contact
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
––– 1160
–––
––– 185
–––
Output Capacitance
V
DS
= 25V
Reverse Transfer Capacitance
–––
53 –––
pF
ƒ = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
I
S
18
––– –––
––– –––
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
72
S
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
––– ––– 1.3
––– 167 251
V
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
T
J
= 25°C, I
F
= 11A
ns
Q
rr
t
on
––– 929
1394 nC di/dt
= 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Parameter
Junction-to-Case
Typ.
–––
Max.
1.0
Units
R
θ
JC
R
θ
CS
R
θ
JA
R
θ
JA
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Junction-to-Ambient (PCB
mount)
ꢀ
0.50
–––
–––
62
°C/W
–––
40
2
IRF640N/S/LPbF
100
10
1
100
10
VGS
15V
VGS
15V
TOP
TOP
10V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
BOTTO
M
4
.5V
4.5V
1
4.5V
0.1
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T =
175 C
J
°
T =
25 C
J
0.1
0.1
0.01
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
100
18A
=
I
D
°
T =
175 C
J
10
1
°
T =
25 C
J
V
= 50V
DS
20µs PULSE WIDTH
V
=
1
0V
GS
0.1
4.0
-60 -40 -20
0
20 40 60 80
100 120 140 160 180
°
5.0
6.0
7.0
8.0 9.0
10.0
T ,
Junction Temperature (
C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 4.
Normalized On-Resistance
Fig 3.
Typical Transfer Characteristics
Vs. Temperature
3
IRF640N/S/LPbF
2500
20
16
12
8
V
C
= 0V,
f = 1 MHZ
I =
D
11A
GS
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
= C
+ C
, C
SHORTED
iss
gs gd
ds
C
= C
gd
rss
2000
1500
1000
500
0
C
= C
+ C
oss
ds gd
Ciss
Coss
Crss
4
0
0
20
40
60
80
1
10
100
1000
Q ,
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
1000
100
10
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
°
T =
175 C
J
10us
100us
°
T =
25 C
J
1ms
10ms
1
°
T =
25 C
J
C
°
T =
175 C
Single Pulse
V
= 0 V
GS
1.4
0.1
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.6
0.1
1
10
100
1000
V
,Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 7.
Typical Source-Drain Diode
Fig 8.
Maximum Safe Operating Area
Forward Voltage
4
IRF640N/S/LPbF
R
D
V
DS
20
16
12
8
V
GS
10V
D.U.T.
R
G
+
–
V
DD
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
4
90%
0
25
50
75
100
125
150
175
°
10%
V
GS
T ,
Case Temperatur
e
(
C
)
C
t
t
r
t
t
f
d(on)
d(off)
Fig 9.
Maximum Drain Current Vs.
Fig 10b.
Switching Time Waveforms
Case Temperature
10
1
D = 0.50
0.20
0.10
P
2
DM
0.1
t
0.05
1
t
0.02
2
SINGLE PULSE
(THERMAL RESPONSE)
0.01
Notes:
1. Duty factor D = t
/ t
1
2. Peak T
=
P
x Z
+ T
C
J
DM
thJC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
5
IRF640N/S/LPbF
600
500
400
300
200
100
0
I
D
15V
TOP
4.4A
7.6A
BOTTOM 11A
DRIVER
+
L
V
DS
D.U.T
R
G
V
DD
–
I
A
AS
20V
Ω
0.01
t
p
Fig 12a.
Unclamped Inductive Test Circuit
V
(BR)DSS
t
p
25
50
75
100
125
150
175
°
Starting T
, Junction Temperature (
C)
J
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
I
AS
Fig 12b.
Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.
T
.
50K
Ω
.2
µ
F
12V
.3
µ
F
Q
G
+
10 V
V
DS
D.U.
T
.
–
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
6
IRF640N/S/LPbF
Peak Diode Recovery dv/dt Test Circuit
+
–
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.T
+
–
–
+
R
G
•
dv/dt controlled by R
G
+
–
•
Driver same type as D.U.T.
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
V
DD
Driver Gate Drive
P.W.
P
.
W.
Period
Period
D =
V
=10V
*
GS
D.U.
T
. I
W
aveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 14.
For N-Channel HEXFET
®
Power MOSFETs
7
IRF640N/S/LPbF
TO-220AB Package Outline
Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
EX
A
M
P
LE: THIS
IS
A
N
I
RF1010
P
A
R
T NU
M
B
ER
L
O
T CO
D
E 1789
A
S
SE
M
B
LED
O
N WW 19, 2000
IN THE
A
S
SE
M
B
LY LI
N
E “C”
IN
T
ER
N
A
T
I
O
N
A
L
RE
C
T
IFIER
L
O
GO
DAT E
CODE
Y
E
A
R 0 =
2
000
W
E
EK
1
9
Note: “P” in
a
s
s
e
mb
l
y lin
e
p
o
s
i
t
ion
indic
a
tes “L
ead – F
r
e
e”
A
S
SE
M
B
LY
L
O
T CO
D
E
LINE C
TO-220AB package is not recommended for Surface Mount Application
Notes:
8
IRF640N/S/LPbF
D
2
Pak (TO-263AB) Package Outline
Dimensions are shown in millimeters (inches)
D
2
Pak (TO-263AB) Part Marking Information
T
H
IS IS
A
N
I
RF530S
W
I
TH
P
A
R
T NUMBER
L
O
T CODE 8024
IN
T
ER
N
A
T
I
O
NAL
RE
C
T
IF
I
ER
LO
G
O
A
S
SE
M
B
LED
O
N WW
0
2, 2000
IN THE
A
S
SE
M
B
LY LI
N
E “
L
”
F
5
30S
DA
T
E
C
ODE
Y
E
A
R 0 =
2
000
W
E
E K
02
AS S
E
M
B
L Y
L
O
T CODE
LINE L
OR
P
A
R
T NUMBER
IN
T
ER
N
A
T
I
O
NAL
RE
C
T
IFIER
L
O
GO
F
5
30S
D
A
T
E
C
ODE
P =
D
E
S
I
G
N
A
T
ES LE
A
D –
F
REE
PR
O
D
U
C
T (O
P
T
I
O
NA
L
)
Y
E
A
R 0 =
2
000
AS S
E
M
B
L Y
L
O
T CODE
W
E
E K
02
A=
A
S
SE
M
B
LY
SITE
C
ODE
Notes:
9
IRF640N/S/LPbF
TO-262 Package Outline
Dimensions are shown in millimeters (inches)
TO-262 Part Marking Information
EX
A
M
P
LE: THIS
IS
A
N
I
RL3103L
L
O
T CODE 1789
P
A
R
T NU
M
B
E
R
IN
T
ER
N
A
T
I
O
NAL
RE
C
T
I
F
I
ER
L
O
GO
AS S
E
M
B L
E
D
O
N WW 19, 1997
IN
T
H
E
A
S
SE
M
B
LY LI
N
E “
C
”
DA
T
E
C
O
D
E
YE
A
R 7 =
1
9
97
W
E
E K 19
Note: “P” in
a
s
s
e
mbly l
i
ne
pos
i
tion in
d
i
c
ates “
L
e
ad
–
Fr
e
e”
A
S
SE
M
B
LY
L
O
T CODE
LINE C
OR
P
A
R
T NU
M
B
ER
IN
T
ER
N
A
T
I
O
NAL
RE
C
T
I
F
I
ER
L
O
GO
DA
T
E
C
O
D
E
P =
D
E
SI
G
NA
T
ES LE
A
D
-FREE
PR
O
D
U
C
T (O
P
TI
O
N
AL)
YE
A
R 7 =
1
9
97
A
S
SE
M
B
LY
L
O
T CODE
W
E
E K 19
A =
A
S S
E
M
BL Y S ITE
C
ODE
Notes:
10
IRF640N/S/LPbF
D
2
Pak Tape & Reel Infomation
Dimensions are shown in millimeters (inches)
TRR
1
.
60 (.063)
1
.
50 (.059)
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
0.368 (.0145)
0.342 (.0135)
FEED DIRECTION
TRL
11.60 (.457)
11.40 (.449)
1
.
85 (.073)
1
.
65 (.065)
24.30 (.957)
23.90 (.941)
15.42 (.609)
15.22 (.601)
1.75 (.069)
1.25 (.049)
10.90 (.429)
10.70 (.421)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
NOTES :
1. COMFORMS
TO EIA-418.
2. CONTROLLING
DIMENSION: MILLIMETER.
3. DIMENSION
MEASURED @ HUB.
4. INCLUDES
FLANGE DISTORTION @ OUTER EDGE.
26.40 (1.039)
24.40 (.961)
4
3
Notes:
Repetitive rating;
pulse width limited by
Pulse width
≤
400µs; duty cycle
≤
2%.
This is only applied to TO-220AB package
max. junction temperature.
Starting T
J
= 25°C, L = 4.2mH
R
G
= 25
Ω
, I
AS
= 11A.
ꢀ
This is applied to D
2
Pak, when mounted on 1″ square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
I
SD
≤
11A
,
di/d
t
≤
344A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
175°C
,
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
11
