Infineon-Technologies-IRF6613TRPBF
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PD – 97087A
IRF6613PbF
IRF6613TRPbF
V
DSS
40V
R
DS(on)
max
3.4m
Ω
@V
GS
= 10V
4.1m
Ω
@V
GS
= 4.5V
Qg(typ.)
l
Lead-Free (Qualified up to 260°C Reflow)
l
Application Specific MOSFETs
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses
42nC
l
High Cdv/dt Immunity
l
Low Profile (<0.7mm)
DirectFET
ISOMETRIC
MT
Applicable DirectFET Outline and
Substrate Outline (see p.8,9 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6613PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve the
lowest on-state resistance in a package that has the footprint of an SO-8 and only 0.7 mm profile.
The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques,
when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual sided
cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6613PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and switching
losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of processors
operating at higher frequencies.
The IRF6613PbF has been optimized for parameters that are critical in synchronous buck converters including
Rds(on), gate charge and Cdv/dt-induced turn on immunity. The IRF6613PbF offers particularly low Rds(on) and high Cdv/dt immunity for
synchronous FET applications
.
Absolute Maximum Ratings
Max.
Parameter
Units
V
DS
40
Drain-to-Source Voltage
V
±20
V
Gate-to-Source Voltage
GS
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
150
I
I
I
I
@ T
C
= 25°C
D
D
D
23
@ T
A
= 25°C
@ T
A
= 70°C
A
18
180
DM
89
P
P
P
@T
C
= 25°C
@T
A
= 25°C
@T
A
= 70°C
Power Dissipation
D
D
D
2.8
Power Dissipation
1.8
Power Dissipation
W
mJ
A
E
AS
I
AR
200
Single Pulse Avalanche Energy
Avalanche Current
18
0.022
-40 to
+ 150
Linear Derating Factor
W/°C
°C
T
T
Operating Junction and
J
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
45
Units
R
θ
JA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
R
θ
JA
–––
–––
1.4
R
θ
JA
°C/W
R
θ
JC
–––
1.0
R
θ
J-PCB
Junction-to-PCB Mounted
–––
Notes
through
are on page 2
1
7/3/06
IRF6613PbF
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max.
Units
Conditions
V
GS
= 0V, I
D
= 250µA
BV
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
40
–––
–––
–––
1.35
–––
–––
–––
–––
–––
93
–––
–––
V
∆Β
V
DSS
/
∆
T
J
R
DS(on)
38
––– mV/°C
Reference to 25°C, I
D
= 1mA
m
Ω
2.6
3.1
–––
-5.8
–––
–––
–––
–––
–––
42
3.4
4.1
V
GS
= 10V, I
D
= 23A
g
V
GS
= 4.5V, I
D
= 18A
g
V
DS
= V
GS
, I
D
= 250µA
V
GS(th)
Gate Threshold Voltage
2.25
V
∆
V
GS(th)
/
∆
T
J
I
DSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
1.0
150
100
-100
–––
63
µA V
DS
= 32V, V
GS
= 0V
V
V
V
DS
= 32V, V
GS
= 0V, T
J
= 125°C
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
nA
S
GS
= 20V
GS
= -20V
gfs
V
DS
= 15V, I
D
= 18A
Q
g
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
t
d(on)
t
r
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
11.5
3.3
12.6
14.6
15.9
22
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS
= 20V
nC
V
GS
= 4.5V
I
D
= 18A
See Fig. 6 and 16
nC V
DS
= 16V, V
GS
= 0V
DD
= 16V, V
GS
= 4.5V
ꢁg
Turn-On Delay Time
18
V
Rise Time
47
I
D
= 18A
t
d(off)
t
f
Turn-Off Delay Time
27
ns Clamped
Inductive Load
Fall Time
4.9
C
iss
C
oss
C
rss
Input Capacitance
––– 5950 –––
V
GS
= 0V
Output Capacitance
–––
–––
990
460
–––
–––
pF
V
DS
= 15V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
D
S
I
S
Continuous Source Current
–––
–––
110
MOSFET symbol
(Body Diode)
A
showing the
G
I
SM
Pulsed Source Current
–––
–––
180
integral reverse
(Body Diode)
ꢁe
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
–––
–––
–––
–––
38
1.0
57
63
V
T
J
= 25°C, I
S
= 18A, V
GS
= 0V
g
Reverse Recovery Time
Reverse Recovery Charge
ns T
J
= 25°C, I
F
= 18A
di/dt = 100A/µs
g
nC
Q
rr
42
Notes:
Surface mounted on 1 in. square Cu board.
Used double sided cooling, mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Repetitive rating;
pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 1.2mH, R
G
= 25
Ω
, I
AS
= 18A.
ꢀ
Pulse width
≤
400µs; duty cycle
≤
2%.
T
C
measured with thermal couple mounted to top (Drain) of
part.
R
is measured at
T
J
of approximately 90°C.
θ
2
IRF6613PbF
1000
100
10
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
7.0V
4.5V
4.0V
3.5V
3.2V
2.9V
2.7V
BOTTOM
BOTTOM
2.7V
2.7V
≤
60µs PULSE WIDTH
≤
60µs PULSE WIDTH
Tj = 25°C
Tj = 150°C
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.0
2.0
1.5
1.0
0.5
I
= 23A
D
V
= 10V
GS
100.0
10.0
1.0
T
= 150°C
J
T
= 25°C
= 15V
J
V
DS
≤
60µs PULSE WIDTH
0.1
1.5
2.0
2.5
3.0
3.5
-60 -40 -20
T
0
20 40 60 80
100 120 140 160
V
, Gate-to-Source Voltage (V)
GS
, Junction Temperature (°C)
J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance vs. Temperature
100000
10000
1000
12
V
C
= 0V,
f = 1 MHZ
GS
I =
18A
= C
+ C
, C
SHORTED
D
V
= 32V
iss
gs
gd ds
DS
VDS= 20V
C
= C
10
8
rss
gd
C
= C
+ C
ds
oss
gd
Ciss
6
Coss
Crss
4
2
0
100
0
20
40
60
80
100
1
10
100
Q
Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 5.
Typical Capacitance vs.Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs.Gate-to-Source Voltage
3
IRF6613PbF
1000.0
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100.0
T
= 150°C
J
100µsec
10.0
1.0
1
T
= 25°C
J
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
1msec
V
= 0V
GS
10msec
0.1
0.2
0.4
V
0.6
0.8
1.0
1.2
1.4
0
1
10
100
1000
, Source-to-Drain Voltage (V)
V
, Drain-toSource Voltage (V)
SD
DS
Fig 7.
Typical Source-Drain Diode Forward Voltage
Fig 8.
Maximum Safe Operating Area
150
2.5
2.0
1.5
1.0
0.5
120
90
60
30
0
I
= 250µA
D
25
50
75
100
125
150
-75 -50 -25
0
25
50
75 100
125 150
T
J
, Junction Temperature (°C)
T
, Temperature ( °C )
J
Fig 10.
Threshold Voltage vs. Temperature
Fig 9.
Maximum Drain Current vs. Case Temperature
100
D = 0.50
10
1
0.20
0.10
0.05
0.02
0.01
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
Ri (°C/W)
τ
i (sec)
0.1
0.6784
17.299
17.566
9.4701
0.00086
0.57756
8.94
τ
τ
J
τ
J
τ
A
τ
τ
τ
1
τ
1
τ
τ
2
τ
2
3
τ
3
4
τ
4
0.01
0.001
0.0001
Ci=
τ
i
/
Ri
106
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
IRF6613PbF
1000
800
600
400
200
0
7.0
6.0
5.0
4.0
3.0
2.0
I
I
= 23A
D
D
TOP
6.7A
8.1A
18A
BOTTOM
T
T
= 125°C
J
= 25°C
8.0
J
2.0
4.0
6.0
10.0
25
50
75
100
125
150
V
, Gate-to-Source Voltage (V)
GS
Starting T
, Junction Temperature (°C)
J
Fig 12.
On-Resistance Vs. Gate Voltage
Fig 13c.
Maximum Avalanche Energy Vs. Drain Current
15V
L
D
V
DS
DRIVER
+
L
V
DS
+
–
V
DD
D.U.T
AS
R
G
V
DD
–
D.U.T
I
A
V
GS
V
GS
0.01
Ω
t
p
Pulse Width < 1µs
Duty Factor < 0.1%
Fig 13a.
Unclamped Inductive Test Circuit
Fig 14a.
Switching Time Test Circuit
V
DS
V
(BR)DSS
t
p
90%
10%
V
GS
t
d(on)
t
d(off)
t
r
t
f
I
AS
Fig 14b.
Switching Time Waveforms
Fig 13b.
Unclamped Inductive Waveforms
Id
Vds
Vgs
L
VCC
DUT
0
Vgs(th)
1K
Qgs1
Qgs2
Qgd
Qgodr
Fig 15.
Gate Charge Test Circuit
Fig 16.
Gate Charge Waveform
5
IRF6613PbF
Driver Gate Drive
P.W.
P
.
W.
Period
D.U.T
Period
D =
+
*
V
=10V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
–
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
•
di/dt controlled by R
G
Re-Applied
Voltage
R
G
+
–
•
Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 17.
Diode Reverse Recovery Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
DirectFET
Substrate and PCB Layout, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and
substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
S
S
G
6
IRF6613PbF
DirectFET
Outline Dimension, MT Outline
(Medium Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and
substrate designs.
DIMENSIONS
IMPERIAL
MIN
6.35 0.246
METRIC
MAX
CODE
MIN
6.25
4.80
3.85
0.35
0.78
0.88
1.78
0.98
0.63
0.88
2.46
0.616
0.020
0.08
MAX
0.250
0.199
0.156
0.018
0.032
0.036
0.072
0.040
0.026
0.039
0.104
0.0274
0.0031
0.007
A
B
C
D
E
F
5.05
3.95
0.189
0.152
0.45 0.014
0.82
0.92 0.035
0.031
1.82
1.02
0.070
0.039
G
H
J
0.67 0.025
1.01 0.035
K
L
2.63
0.097
0.676 0.0235
0.080 0.0008
M
R
P
0.17
0.003
DirectFET
Part Marking
7
IRF6613PbF
DirectFET
T
a
pe & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6613TRPBF). For 1000 parts on 7″
reel, order
IRF6613TR1PBF
REEL DIMENSIONS
STANDARD OPTION
(QTY 4800)
TR1 OPTION
(QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MIN
MAX
IMPERIAL
CODE
MIN
MAX
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
100.0
N.C
N.C
58.72
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
LOADED TAPE FEED DIRECTION
DIMENSIONS
METRIC
IMPERIAL
CODE
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MIN
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
G
H
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
8
Note: For
the most current drawings please refer to the IR website at:
