Infineon-Technologies-IRF6636TRPBF
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PD – 97219
IRF6636PbF
IRF6636TRPbF
Typical values (unless otherwise specified)
l
Lead-Free (Qualified up to 260°C Reflow)
l
Application Specific MOSFE
T
s
l
Ideal for CPU Core DC-DC Converters
l
Low Conduction Losses
V
DSS
V
GS
R
DS(on)
R
DS(on)
20V max
±20V max
3.2m
Ω
@ 10V
4.6m
Ω
@ 4.5V
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
l
High Cdv/dt Immunity
18nC
6.1nC 1.9nC 7.3nC
10nC
1.8V
l
Low Profile (<0.7mm)
DirectFET
ISOMETRIC
ST
Applicable DirectFET Outline and
Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
Description
The IRF6636PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packaging to achieve
the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile.
The DirectFET package is
compatible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection
soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET pack-
age allows dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6636PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies.
The IRF6636PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt buss converters including Rds(on) and gate charge
to minimize losses in the control FET socke
t.
Absolute Maximum Ratings
Max.
20
Parameter
Units
V
V
DS
Drain-to-Source Voltage
±20
18
V
Gate-to-Source Voltage
GS
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
I
I
I
@ T
A
= 25°C
D
D
D
15
@ T
A
= 70°C
@ T
C
= 25°C
A
81
140
28
DM
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
14
20
15
10
5
6.0
5.0
4.0
3.0
2.0
1.0
0.0
I =
14A
I
= 18A
D
D
V
V
= 16V
= 10V
DS
DS
T
= 125°C
J
T
= 25°C
J
0
0
1
2
3
4
5
6
7
8
9
10
0
10
20
30
Q
Total Gate Charge (nC)
G
V
Gate -to -Source Voltage
(V)
GS,
Fig 1.
Typical On-Resistance vs. Gate Voltage
Fig 2.
Typical Total Gate Charge vs. Gate-to-Source
Voltage
Notes:
T
C
measured with thermocouple mounted to top (Drain) of part.
ꢀ
Repetitive rating;
pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.27mH, R
G
= 25
Ω
, I
AS
= 14A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
1
05/29/06
IRF6636PbF
Static @ T
J
= 25°C (unless otherwise specified)
Conditions
V
GS
= 0V, I
D
= 250µA
Parameter
Min. Typ. Max.
Units
BV
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
20
–––
–––
–––
1.55
–––
–––
–––
–––
–––
52
–––
–––
V
Reference to 25°C, I
= 1mA
∆Β
V
DSS
/
∆
T
J
R
DS(on)
15
––– mV/°C
D
V
GS
= 10V, I
D
= 18A
i
V
GS
= 4.5V, I
D
= 14A
i
V
DS
= V
GS
, I
D
= 250µA
3.2
4.6
–––
-6.4
–––
–––
–––
–––
–––
18
4.5
6.4
m
Ω
V
GS(th)
Gate Threshold Voltage
2.45
V
∆
V
GS(th)
/
∆
T
J
I
DSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
––– mV/°C
V
DS
= 16V, V
GS
= 0V
1.0
150
100
-100
–––
27
µA
nA
S
V
DS
= 16V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
GS
= -20V
V
DS
= 10V, I
D
= 14A
gfs
Q
g
–––
–––
–––
–––
–––
–––
–––
–––
V
DS
= 10V
V
GS
= 4.5V
I
D
= 14A
Q
gs1
Q
gs2
Q
gd
Q
godr
Q
sw
Q
oss
R
G
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
5.9
1.9
6.1
4.1
8.0
10
–––
–––
nC
–––
–––
–––
1.5
See Fig. 15
V
DS
= 10V, V
GS
= 0V
nC
Gate Resistance
–––
14
Ω
V
DD
= 16V, V
GS
= 4.5V
ꢁi
I
D
= 14A
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
–––
–––
–––
–––
–––
–––
–––
–––
Rise Time
19
Clamped Inductive Load
See Fig. 16 & 17
V
GS
= 0V
Turn-Off Delay Time
16
ns
Fall Time
6.2
C
iss
C
oss
C
rss
Input Capacitance
––– 2420 –––
V
DS
= 10V
Output Capacitance
–––
–––
780
360
–––
–––
pF
ƒ = 1.0MHz
Reverse Transfer Capacitance
Diode Characteristics
Conditions
MOSFET symbol
Parameter
Min. Typ. Max.
Units
I
S
Continuous Source Current
–––
–––
52
showing the
(Body Diode)
A
I
SM
integral reverse
Pulsed Source Current
(Body Diode)
ꢁe
–––
–––
140
p-n junction diode.
T
J
= 25°C, I
S
= 14A, V
GS
= 0V
i
T
J
= 25°C, I
F
= 14A
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
16
1.0
24
11
V
ns
nC
Q
rr
di/dt = 100A/µs
iꢁ
See Fig. 18
7.3
Notes:
ꢀ
Repetitive rating;
pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
IRF6636PbF
Absolute Maximum Ratings
Max.
2.2
Parameter
Units
W
P
P
P
@T
A
= 25°C
@T
A
= 70°C
@T
C
= 25°C
Power Dissipation
Power Dissipation
Power Dissipation
D
D
D
P
J
1.4
42
270
T
T
T
Peak Soldering Temperature
Operating Junction and
°C
-40 to
+ 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
58
Units
°C/W
W/°C
R
θ
R
θ
R
θ
R
θ
R
θ
Junction-to-Ambient
JA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
–––
–––
3.0
JA
JA
–––
1.0
JC
Junction-to-PCB Mounted
Linear Derating Factor
–––
J-PCB
0.017
100
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
1
Ri (°C/W)
τ
i (sec)
R
1
R
1
R
2
R
2
R
3
R
3
R
4
R
4
R
5
R
5
0.6677
A
τ
A
1.0463
1.5612
0.000066
0.000896
0.004386
τ
τ
J
τ
J
τ
0.1
τ
1
τ
1
τ
τ
τ
2
τ
2
3
τ
3
4
τ
4
5
τ
5
29.2822 0.686180
25.4550 32
Ci=
τ
i
/
Ri
SINGLE PULSE
( THERMAL RESPONSE )
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
1
10
100
t
, Rectangular Pulse Duration (sec)
1
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
R
is measured at
T
J
of approximately 90°C.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
Mounted on minimum
footprint full size board with
metalized back and with small
clip heatsink (still air)
Mounted to a PCB
with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
(still air).
3
IRF6636PbF
1000
1000
100
10
VGS
10V
VGS
10V
TOP
TOP
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
5.0V
4.5V
4.0V
3.5V
3.0V
2.8V
2.5V
100
10
BOTTOM
BOTTOM
2.5V
60µs PULSE WIDTH
≤
Tj = 150°C
60µs PULSE WIDTH
≤
Tj = 25°C
2.5V
1
1
0.1
1
10
100
1000
0.1
1
10
100
1000
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 4.
Typical Output Characteristics
Fig 5.
Typical Output Characteristics
1.5
1.0
0.5
1000
100
10
I
= 18A
V
= 10V
D
DS
≤
60µs PULSE WIDTH
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
V
V
= 10V
GS
GS
1
= 4.5V
0.1
1
2
3
4
-60 -40 -20
0
20 40 60 80
100 120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 7.
Normalized On-Resistance vs. Temperature
Fig 6.
Typical Transfer Characteristics
100000
10000
1000
50
V
= 0V,
= C
f = 1 MHZ
GS
T
= 25°C
C
C
C
+ C
, C
SHORTED
J
iss
gs
gd
ds
= C
rss
oss
gd
= C
+ C
Vgs = 3.0V
Vgs = 3.5V
Vgs = 4.0V
Vgs = 4.5V
Vgs = 5.0V
Vgs = 10V
40
30
20
10
0
ds
gd
C
C
C
iss
oss
rss
100
0
20
40
60
80
100 120 140
1
10
100
V
, Drain-to-Source Voltage (V)
DS
I ,
Drain Current (A)
D
Fig 9.
Typical On-Resistance vs.
Drain Current and Gate Voltage
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
4
IRF6636PbF
1000
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
100µsec
1msec
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
10msec
1
T
T
= 25°C
0.1
0.01
A
J
= 150°C
V
= 0V
GS
Single Pulse
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
, Source-to-Drain Voltage (V)
0.01
0.10
V ,
Drain-to-Source Voltage (V)
DS
1.00
10.00
100.00
V
SD
Fig11.
Maximum Safe Operating
Area
Fig 10.
Typical Source-Drain Diode Forward Voltage
90
80
70
60
50
40
30
20
10
0
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
I
= 50µA
D
-75 -50 -25
0
25 50 75
100 125 150
25
50
T
75
100
125
150
T
, Temperature ( °C )
J
,
C
ase Temperature (°C)
C
Fig 13.
Threshold Voltage vs. Temperature
Fig 12.
Maximum Drain Current vs. Case Temperature
120
I
D
TOP
6.4A
9.8A
100
80
60
40
20
0
BOTTOM 14A
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
J
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
IRF6636PbF
Current Regulator
Same Type as D.U.
T
.
Id
Vds
50K
Ω
Vgs
.2
µ
F
12V
.3
µ
F
+
V
DS
D.U.
T
.
–
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 15a.
Gate Charge Test Circuit
Fig 15b.
Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
V
GS
R
G
V
DD
–
I
A
20V
0.01
Ω
t
p
I
AS
Fig 16b.
Unclamped Inductive Waveforms
Fig 16a.
Unclamped Inductive Test Circuit
L
D
V
DS
V
DS
90%
+
–
V
DD
10%
V
GS
D.U.T
V
GS
t
d(on)
t
d(off)
t
r
Pulse Width < 1µs
Duty Factor < 0.1%
t
f
Fig 17a.
Switching Time Test Circuit
Fig 17b.
Switching Time Waveforms
6
IRF6636PbF
Driver Gate Drive
P.W.
P
.
W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
•
di/dt controlled by R
G
Re-Applied
Voltage
R
G
+
–
•
Driver same type as D.U.T.
Body Diode
Inductor Current
Forward Drop
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 18.
Diode Reverse Recovery Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
DirectFET
Substrate and PCB Layout, ST Outline
(Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and
substrate designs.
G = GATE
D = DRAIN
S = SOURCE
D
D
D
D
S
S
G
7
IRF6636PbF
DirectFET
Outline Dimension, ST Outline
(Small Size Can, T-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and
substrate designs.
DIMENSIONS
IMPERIAL
MIN
4.85 0.187
METRIC
MAX
CODE
MIN
MAX
0.191
0.156
0.112
0.018
0.024
0.024
0.031
0.022
0.012
0.039
0.090
0.0274
0.0031
0.007
A
B
C
D
E
F
4.75
3.70
2.75
0.35
0.58
0.58
0.75
0.53
0.26
0.88
2.18
0.616
0.020
0.08
3.95
2.85
0.146
0.108
0.45 0.014
0.62
0.62
0.79
0.57
0.30
0.98
2.28
0.676
0.023
0.023
0.030
0.021
0.010
0.035
0.086
0.0235
G
H
J
K
L
M
R
P
0.080 0.0008
0.17
0.003
DirectFET
Part Marking
8
IRF6636PbF
DirectFET
T
a
pe & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6636TRPBF). For 1000 parts on 7″
reel, order
IRF6636TR1PBF
REEL DIMENSIONS
STANDARD OPTION
(QTY 4800)
TR1 OPTION
(QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MAX
IMPERIAL
CODE
MIN
MIN
MAX
N.C
MIN
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
A
B
C
D
E
F
12.992
0.795
0.504
0.059
3.937
N.C
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Loaded Tape Feed Direction
DIMENSIONS
METRIC
IMPERIAL
CODE
MIN
0.311
MAX
0.319
0.161
0.484
0.219
0.165
0.205
N.C
MIN
7.90
3.90
11.90
5.45
4.00
5.00
1.50
1.50
MAX
A
B
C
D
E
F
8.10
4.10
12.30
5.55
4.20
5.20
N.C
0.154
0.469
0.215
0.158
0.197
0.059
0.059
G
H
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
9
Note: For
the most current drawings please refer to the IR website at:
