Infineon-Technologies-IRF6641TRPBF
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DIGITAL AUDIO MOSFET
IRF6641TRPbF
Key Parameters
Features
Latest MOSFET silicon technology
Key parameters optimized for Class-D audio amplifier
applications
Low R
DS(on)
for improved efficiency
Low Qg for better THD and improved efficiency
Low Qrr for better THD and lower EMI
Low package stray inductance for reduced ringing and lower
EMI
V
DS
200
V
R
DS(ON)
typ. @ V
GS
= 10V
51
34
m
nC
Qg typ.
R
G(int)
typ.
1.0
Can deliver up to 400 W per channel into 8
load in half-bridge
configuration amplifier
Dual sided cooling compatible
Compatible with existing surface mount technologies
RoHS compliant, halogen-free
Lead-free (qualified up to 260°C reflow)
MZ
SQ
SX
ST
SH
MQ
MX
MT
MN
MZ
Description
This Digital Audio MOSFET is specifically designed for Class-D audio amplifier applications. This MOSFET utilizes the latest
processing techniques to achieve low on-resistance per silicon area. Furthermore, gate charge, body-diode reverse recovery and
internal gate resistance are optimized to improve key Class-D audio amplifier performance factors such as efficiency, THD, and EMI.
The IRF6641PbF device utilizes DirectFET
®
packaging technology.
DirectFET
®
packaging technology offers lower parasitic
inductance and resistance when compared to conventional wirebonded SOIC packaging.
Lower inductance improves EMI
performance by reducing the voltage ringing that accompanies fast current transients.
The DirectFET
®
package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering
techniques, when application note AN-1035 is followed regarding the manufacturing method and processes.
The DirectFET
®
package
also allows dual sided cooling to maximize thermal transfer in power systems, improving thermal resistance and power dissipation.
These features combine to make this MOSFET a highly efficient, robust and reliable device for Class-D audio amplifier applications.
Base part number
Package Type
Standard Pack
Orderable Part Number
Form
Tape and Reel
Quantity
4800
IRF6641PbF
DirectFET Medium Can
IRF6641TRPbF
Absolute Maximum Ratings
Parameter
Gate-to-Source Voltage
Max.
±20
Units
V
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
26
4.6
3.7
A
37
P
D
@T
C
= 25°C
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
E
AS
89
Power Dissipation
2.8
1.8
46
W
Power Dissipation
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
I
AR
11
Linear Derating Factor
0.022
-40 to
+ 150
W/°C
°C
T
J
Operating Junction and
T
STG
Storage Temperature Range
Notes
through
are on page 9
1
© 2013 International Rectifier
July 1, 2013
IRF6641TRPbF
Thermal Resistance
Parameter
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
Junction-to-PCB Mounted
Typ.
–––
12.5
20
–––
1.0
Max.
45
–––
–––
1.4
Units
R
JA
R
JA
R
JA
R
JC
°C/W
–––
R
J-PCB
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
Min.
200
–––
–––
3.0
Typ.
–––
0.23
51
Max. Units
Conditions
V
GS
= 0V, I
D
= 250µA
V
(BR)DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
–––
–––
59.9
4.9
V
V/°C Reference
to 25°C, I
D
= 1.0mA
BV
DSS
/
T
J
R
DS(on)
V
GS(th)
V
GS
= 10V, I
D
= 5.5A
V
DS
= V
GS
, I
D
= 150µA
m
V
4.0
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
-11
––– mV/°C
V
GS(th)
I
DSS
–––
20
µA V
DS
= 200V, V
GS
= 0V
V
DS
= 160V, V
GS
= 0V, T
J
=125°C
nA V
GS
= 20V
–––
–––
–––
–––
–––
–––
250
100
-100
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
gfs
Q
g
Q
gs1
Q
gs2
Q
gd
Q
godr
Forward Transconductance
Total Gate Charge
Pre-VthGate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
13
–––
34
8.7
1.9
9.5
14
–––
48
–––
–––
14
S
V
DS
= 10V, I
D
= 5.5A
–––
–––
–––
–––
–––
V
V
DS
= 100V
GS
= 10V
nC
I
D
= 5.5A
Gate Charge Overdrive
–––
Q
sw
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
C
oss
Switch Charge (Q
gs2
+ Q
gd
)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
–––
–––
–––
–––
–––
–––
–––
–––
–––
11
16
11
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS
= 16V, V
GS
= 0V
V
DD
= 100V, V
GS
= 10V
ns I
D
= 5.5A
31
R
G
= 6.2
6.5
2290
240
46
V
GS
= 0V
V
DS
= 25V
pF ƒ
= 1.0MHz
V
GS
=0V, V
DS
=1.0V, ƒ=1.0MHz
1780
C
oss
Output Capacitance
–––
100
–––
V
GS
=0V, V
DS
=160V, ƒ=1.0MHz
Diode Characteristics
Parameter
Min.
Typ.
Max. Units
Conditions
D
I
S
Continuous Source Current
(Body Diode)
–––
–––
26
A
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
I
SM
Pulsed Source Current
(Body Diode)
–––
–––
37
S
V
SD
t
rr
Q
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
85
320
1.3
130
480
V
T
J
= 25°C, I
S
= 5.5A, V
GS
= 0V
ns T
J
= 25°C, I
F
= 5.5A,V
DD
= 100V
di/dt = 100A/µs
nC
2
© 2013 International Rectifier
July 1, 2013
IRF6641TRPbF
100
10
1
100
10
1
VGS
15V
10V
8
.
0
V
7
.
0
V
VGS
15V
10V
8
.
0
V
7
.
0
V
TOP
TOP
BOTTOM
BOTTOM
7.0V
7.0V
60µs PULSE WIDTH
Tj = 150°C
60µs PULSE WIDTH
Tj = 25°C
0.1
0.1
1
10
0.1
1
10
V
, Dr
a
in-to-Source Volta
g
e (
V
)
DS
V
, Dr
a
in-to-Source Voltage (V)
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
100
2.5
2.0
1.5
1.0
0.5
I
= 5.5A
D
V
= 10V
GS
10
T =
150°C
J
T =
25°C
J
T =
–
4
0°C
J
1
V
= 10V
DS
60µs PULSE
W
IDTH
0.1
2
4
6
8
10 12 14 16
–
6
0
–
4
0
–
2
0
0
20 40 60 80
100 120 140 160
T ,
Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
J
GS
Fig 4.
Normalized On-Resistance vs. Temperature
Fig 3.
Typical Transfer Characteristics
100000
10000
1000
100
12.0
V
= 0V,
f = 1 MHZ
GS
I =
5.5A
D
C
C
C
= C
+ C
, C
SH
O
RTED
iss
r
s
s
oss
gs
gd
ds
= C
10.0
gd
V
V
V
= 160V
= 100V
= 40V
DS
DS
DS
= C
+ C
ds
gd
8.0
6.0
4.0
2.0
0.0
C
iss
C
oss
C
rss
10
1
10
100
1000
0
5
10 15 20 25 30 35 40
V
, Dr
a
in-to-Source Voltage (V)
Q , Total
Gate Charge (nC)
G
DS
Fig 5.
Typical Capacitance vs. Drain-to-Source Voltage
Fig 6.
Typical Gate Charge vs Gate-to-Source Voltage
3
© 2013 International Rectifier
July 1, 2013
IRF6641TRPbF
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(
o
n)
T
T
T
= 150°C
= 25°C
= –
4
0°C
DS
J
J
J
1
100µsec
1msec
10msec
0.1
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
1.0
GS
0
0.0
0.2
V
0.4
0.6
0.8
1.2
0
1
10
100
1000
, Sou
r
ce-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode Forward Voltage
6.0
5
4
3
2
1
0
5.0
4.0
I
I
I
I
= 150µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
3.0
2.0
–
7
5
–
5
0
–
2
5
0
25 50 75
100 125 150
25
50
75
100
125
150
T
A
, Ambient Temperature (°C)
T
, Temperature ( °C )
J
Fig 10.
Typical Threshold Voltage vs.
Fig 9.
Maximum Drain Current vs. Ambient Temperature
Junction Temperature
100
D = 0.50
10
1
0.20
0.10
0.05
0.02
0.01
0.1
0.01
Notes:
SINGLE PULSE
( THERMAL RESPONSE )
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
0.001
1E
–
0
06
1E
–
0
05
0.0001
0.001
0.01
0.1
1
10
100
1000
t
, Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
4
© 2013 International Rectifier
July 1, 2013
IRF6641TRPbF
100
90
80
70
60
50
200
180
160
140
120
100
80
I
= 5.5A
T
= 25°C
D
J
T
= 125°C
= 25°C
J
V
g
s =
7
.0V
V
g
s =
8
.0V
V
g
s =
1
0V
V
g
s =
1
5V
T
J
60
40
20
0
0
10
20
30
40
50
60
4
6
8
10
12
14
16
V
Gate -to -Source Voltage
(V)
I ,
Dr
a
in Current (A)
GS,
D
Fig 12.
Typical On-Resistance vs. Gate Voltage
Fig 13.
Typical On-Resistance vs. Drain Current
200
I
TOP
D
180
160
140
120
100
80
3.7A
5.7A
15V
BOTTOM 11A
DRIVER
+
L
V
DS
D.U.T
AS
R
G
V
DD
–
I
A
20V
0.01
t
p
60
Fig 15a.
Unclamped Inductive Test Circuit
40
20
0
V
(BR)DSS
25
50
75
100
125
150
t
p
Starting T
, Junction Temperature (°C)
J
Fig 14.
Maximum Avalanche Energy vs. Drain Current
I
AS
Fig 15b.
Unclamped Inductive Waveforms
Fig 16b.
Switching Time Waveforms
July 1, 2013
Fig 16a.
Switching Time Test Circuit
www.irf.com
© 2013 International Rectifier
5
Id
Vds
Vgs
VDD
Vgs(th)
Qgs1
Qgs2
Qgd
Qgodr
Fig 17a.
Gate Charge Test Circuit
Fig 17b.
Gate Charge Waveform
Fig 18.
Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET
®
Power MOSFETs
IRF6641TRPbF
DirectFET
®
Substrate and PCB Layout, MZ Outline
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and
substrate designs.
7
© 2013 International Rectifier
July 1, 2013
IRF6641TRPbF
DirectFET
®
Outline Dimension, MZ Outline
(Medium Size Can, D-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET. This includes all
recommendations for stencil and
substrate designs.
DIMENSIONS
IMPERIAL
METRIC
CODE
MAX
6.35
MAX
MIN
6.25
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.038
0.026
0.013
0.050
0.105
0.0274
0.0031
0.007
A
B
C
D
E
F
0.246
0.189
0.152
0.014
0.027
0.027
0.037
0.025
0.011
0.044
0.100
0.0235
0.0008
0.003
4.80 5.05
3.85
0.35
0.68
0.68
0.93
0.63
0.28
1.13
2.53
3.95
0.45
0.72
0.72
0.97
0.67
0.32
1.26
2.66
G
H
J
K
L
M
R
P
0.616 0.676
0.020 0.080
0.08
0.17
DirectFET
®
Part Marking
8
© 2013 International Rectifier
July 1, 2013
IRF6641TRPbF
DirectFET
®
Tape & Reel Dimension (Showing component orientation).
LOADED TAPE FEED DIRECTION
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6641TRPBF). For 1000 parts on 7″
reel, order
IRF6641TR1PBF
DIMENSIONS
METRIC
REEL DIMENSIONS
IMPERIAL
STANDARD OPTION
(QTY 4800)
TR1 OPTION
(QTY 1000)
CODE
MIN
0.311
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MAX
METRIC
MAX
IMPERIAL
METRIC
MIN
MAX
IMPERIAL
A
B
C
D
E
F
8.10
4.10
12.30
5.55
5.30
6.70
N.C
CODE
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
MIN
MAX
N.C
0.154
0.469
0.215
0.201
0.256
0.059
0.059
A
B
C
D
E
F
330.0
20.2
12.8
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
177.77 N.C
0.75
0.53
0.059
2.31
N.C
N.C
19.06
13.5
1.5
N.C
0.520
N.C
12.8
N.C
100.0
N.C
58.72
N.C
N.C
N.C
G
H
0.724
0.567
0.606
13.50
12.01
12.01
1.60
0.063
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
Qualification Information
†
Consumer
††
(per JEDEC JESD47F)
†††
Qualification Level
MSL1
DirectFET
Moisture Sensitivity Level
RoHS Compliant
(per JEDEC J-STD-020D
†††)
Yes
†
Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability/
††
Higher qualification ratings may be available should the user have such requirements.
Please contact your International Rectifier sales representative for further information:
††† Applicable
version of JEDEC standard at the time of product release.
Notes:
Used double sided cooling , mounting pad with
Repetitive rating;
pulse width limited by max. junction
temperature.
large heatsink.
Mounted on minimum footprint full size board with
metalized back and with small clip heatsink.
T
C
measured with thermal couple mounted to top
(Drain) of part.
Starting T
J
= 25°C, L = 0.77mH, R
G
= 25
, I
AS
= 11A.
Surface mounted on 1 in. square Cu board.
Pulse width
400µs; duty cycle
2%.
Coss eff. is a fixed capacitance that gives the same
R
is measured at T
J
of approximately 90°C.
charging time as Coss while V
DS
is rising from 0 to
80% V
DSS
.
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
9
© 2013 International Rectifier
July 1, 2013
IRF6641TRPbF
Revision History
Date
Comments
06/28/2013
05/17/2013
Added the Consumer qualification level information, on page 9.
Converted the data sheet to Class-D Audio formatting template. No change in electrical
parameters.
10
© 2013 International Rectifier
July 1, 2013
