Infineon-Technologies-IRF6668TRPBF
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PD – 97232A
IRF6668PbF
IRF6668TRPbF
Typical values (unless otherwise specified)
l
Lead-Free (Qualified up to 260°C Reflow)
l
Application Specific MOSFE
T
s
R
DS(on)
V
DSS
V
GS
12m
Ω
@ 10V
l
Ideal for High Performance Isolated Converter
Primary Switch Socket
l
Optimized for Synchronous Rectification
80V max
±20V max
Q
g tot
Q
gd
Q
gs2
Q
rr
Q
oss
V
gs(th)
22nC
7.8nC 1.6nC
40nC
12nC
4.0V
l
Low Conduction Losses
l
High Cdv/dt Immunity
l
Low Profile (<0.7mm)
DirectFET
ISOMETRIC
MZ
Applicable DirectFET Outline and
Substrate Outline (see p.7,8 for details)
SQ
SX
ST
MQ
MX
MT
MZ
Description
The IRF6668PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET
TM
packag-
ing to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
The
DirectFET package is compatible with existing layout geometries used in power applications, PCB assembly equipment and
vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is followed regarding the manufacturing
methods and processes. The DirectFET package allows dual sided cooling to maximize thermal transfer in power systems,
improving previous best thermal resistance by 80%.
The IRF6668PbF is optimized for primary side bridge topologies in isolated DC-DC applications, for 48V(±10%) or 36V-60V
ETSI input voltage range systems.
The IRF6668PbF is also ideal for secondary side synchronous rectification in regulated
isolated DC-DC topologies.
The reduced total losses in the device coupled with the high level of thermal performance enables
high efficiency and low temperatures, which are key for system reliability improvements, and makes this device ideal for high
performance isolated DC-DC converters.
Absolute Maximum Ratings
Max.
80
Parameter
Units
V
V
DS
Drain-to-Source Voltage
±20
55
V
Gate-to-Source Voltage
GS
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
I
I
I
@ T
C
= 25°C
D
D
44
@ T
C
= 70°C
A
170
24
DM
E
AS
I
AR
Single Pulse Avalanche Energy
Avalanche Current
mJ
A
23
60
50
40
30
20
10
0
12.0
10.0
8.0
I
= 12A
I =
12A
D
D
V
= 64V
= 40V
DS
V
DS
6.0
T
= 125°C
J
4.0
2.0
T
= 25°C
8
J
0.0
4
6
10
12
14
16
0
2
4
6
8
10 12 14 16 18 20 22 24
Q ,
Total Gate Charge (nC)
G
V
Gate -to -Source Voltage
(V)
GS,
Fig 1.
Typical On-Resistance vs. Gate-to-Source
Voltage
Fig 2.
Total Gate Charge vs.
Gate-to-Source Voltage
Notes:
T
C
measured with thermocouple mounted to top (Drain) of part.
ꢀ
Repetitive rating;
pulse width limited by max. junction temperature.
Starting T
J
= 25°C, L = 0.088mH, R
G
= 25
Ω
, I
AS
= 23A.
Click on this section to link to the appropriate technical paper.
Click on this section to link to the DirectFET Website.
Surface mounted on 1 in. square Cu board, steady state.
1
08/28/06
IRF6668PbF
Static @ T
J
= 25°C (unless otherwise specified)
Conditions
V
GS
= 0V, I
D
= 250µA
Parameter
Min. Typ. Max.
Units
BV
DSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
80
–––
–––
V
V/°C
m
Ω
V
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 12A
i
V
DS
= V
GS
, I
D
= 100µA
∆Β
V
DSS
/
∆
T
J
R
DS(on)
––– 0.097 –––
–––
3.0
12
4.0
-11
–––
–––
–––
–––
–––
22
15
V
GS(th)
4.9
∆
V
GS(th)
/
∆
T
J
I
DSS
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
–––
–––
–––
–––
–––
22
––– mV/°C
V
DS
= 80V, V
GS
= 0V
20
250
100
-100
–––
31
µA
nA
S
V
DS
= 64V, V
GS
= 0V, T
J
= 125°C
V
GS
= 20V
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
V
GS
= -20V
V
DS
= 10V, I
D
= 12A
gfs
Q
g
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
V
DS
= 40V
V
GS
= 10V
I
D
= 12A
Q
gs1
Q
gs2
Q
gd
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
gs2
+ Q
gd
)
Output Charge
4.8
1.6
7.8
7.8
9.4
12
–––
–––
12
nC
Q
godr
Q
sw
Q
oss
R
G(Internal)
t
d(on)
t
r
–––
–––
–––
–––
–––
–––
–––
–––
See Fig. 15
V
DS
= 16V, V
GS
= 0V
nC
Gate Resistance
1.0
19
Ω
V
DD
= 40V, V
GS
= 10V
ꢁi
Turn-On Delay Time
I
D
= 12A
Rise Time
13
t
d(off)
t
f
R
G
= 6.2
Ω
See Fig. 16 & 17
V
GS
= 0V
Turn-Off Delay Time
7.1
23
ns
Fall Time
C
iss
C
oss
C
rss
Input Capacitance
––– 1320 –––
V
DS
= 25V
ƒ = 1.0MHz
Output Capacitance
–––
–––
310
76
–––
–––
pF
Reverse Transfer Capacitance
Diode Characteristics
Conditions
Parameter
Min. Typ. Max.
Units
I
S
MOSFET symbol
Continuous Source Current
–––
–––
81
showing the
(Body Diode)
A
I
SM
integral reverse
Pulsed Source Current
(Body Diode)
ꢁg
–––
–––
170
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
i
T
J
= 25°C, I
F
= 12A
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
–––
–––
34
1.3
51
60
V
ns
nC
Q
rr
di/dt = 100A/µs
iꢁꢁ
See Fig. 18
40
Notes:
ꢀ
Repetitive rating;
pulse width limited by max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
IRF6668PbF
Absolute Maximum Ratings
Max.
2.8
Parameter
Units
W
P
P
P
@T
A
= 25°C
@T
A
= 70°C
@T
C
= 25°C
Power Dissipation
Power Dissipation
Power Dissipation
D
D
D
P
J
1.8
89
270
T
T
T
Peak Soldering Temperature
Operating Junction and
°C
-40 to
+ 150
Storage Temperature Range
STG
Thermal Resistance
Parameter
Typ.
–––
12.5
20
Max.
45
Units
°C/W
W/°C
R
θ
R
θ
R
θ
R
θ
R
θ
Junction-to-Ambient
JA
Junction-to-Ambient
Junction-to-Ambient
Junction-to-Case
–––
–––
1.4
JA
JA
–––
1.0
JC
Junction-to-PCB Mounted
Linear Derating Factor
–––
J-PCB
0.022
10
1
D = 0.50
0.20
R
1
R
1
R
2
R
2
R
3
R
3
τ
i (sec)
0.10
0.05
Ri (°C/W)
τ
J
τ
J
τ
0.1
τ
C
τ
C
0.3173 0.000048
0.5283 0.000336
0.5536 0.001469
τ
1
τ
1
τ
2
τ
2
3
τ
3
0.02
0.01
Ci=
τ
i
/
Ri
Ci=
τ
i
/
Ri
0.01
0.001
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
, Rectangular Pulse Duration (sec)
1
Fig 3.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Notes:
R
is measured at
T
J
of approximately 90°C.
Used double sided cooling , mounting pad.
Mounted on minimum footprint full size board with metalized
back and with small clip heatsink.
θ
Mounted on minimum
Mounted to a PCB
with
small clip heatsink (still air)
Surface mounted on 1 in. square Cu
footprint full size board with
metalized back and with small
clip heatsink (still air)
(still air).
3
IRF6668PbF
1000
1000
100
10
VGS
VGS
15V
TOP
15V
10V
8.0V
7.0V
6.0V
TOP
10V
8.0V
7.0V
6.0V
BOTTOM
BOTTOM
100
10
1
6.0V
6.0V
60µs PULSE WIDTH
Tj = 150°C
≤
60µs PULSE WIDTH
Tj = 25°C
≤
1
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
DS
V
, Drain-to-Source Voltage (V)
DS
Fig 5.
Typical Output Characteristics
Fig 4.
Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
V
= 10V
I
= 12A
DS
D
≤
60µs PULSE WIDTH
V
= 10V
GS
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
1
0.1
2
4
6
8
10
12
-60 -40 -20
0
20 40 60 80
100 120 140 160
T
J
, Junction Temperature (°C)
V
, Gate-to-Source Voltage (V)
GS
Fig 7.
Normalized On-Resistance vs. Temperature
Fig 6.
Typical Transfer Characteristics
60
10000
1000
100
V
= 0V,
= C
f = 1 MHZ
+ C
, C
GS
T
= 25°C
J
C
C
C
SHORTED
ds
iss
gs
gd
Vgs = 7.0V
Vgs = 8.0V
Vgs = 10V
Vgs = 15V
= C
50
40
30
20
10
0
rss
oss
gd
= C
+ C
ds
gd
C
iss
C
oss
C
rss
10
0
20
40
60
80
100
1
10
100
V
, Drain-to-Source Voltage (V)
DS
I ,
Drain Current (A)
D
Fig 9.
Typical On-Resistance vs. Drain Current
Fig 8.
Typical Capacitance vs.Drain-to-Source Voltage
4
IRF6668PbF
1000
100
10
1
1000
100
10
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
T
T
T
= 150°C
= 25°C
= -40°C
J
J
J
100µsec
1msec
10msec
1
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0V
GS
0
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
0
1
10
100
V
, Source-to-Drain Voltage (V)
V
, Drain-to-Source Voltage (V)
SD
DS
Fig11.
Maximum Safe Operating
Area
Fig 10.
Typical Source-Drain Diode Forward Voltage
60
6.0
50
40
30
20
10
0
5.0
4.0
I
I
I
I
= 100µA
= 250µA
= 1.0mA
= 1.0A
D
D
D
D
3.0
2.0
25
50
T
75
100
125
150
-75 -50 -25
0
25 50 75
100 125 150
, Case Temperature (°C)
T
, Temperature ( °C )
C
J
Fig 13.
Threshold Voltage vs. Temperature
Fig 12.
Maximum Drain Current vs. Case Temperature
100
I
TOP
D
4.3A
7.6A
BOTTOM 23A
80
60
40
20
0
25
50
75
100
125
150
Starting T
, Junction Temperature (°C)
J
Fig 14.
Maximum Avalanche Energy vs. Drain Current
5
IRF6668PbF
Current Regulator
Same Type as D.U.
T
.
Id
Vds
50K
Ω
Vgs
.2
µ
F
12V
.3
µ
F
+
V
DS
D.U.
T
.
–
Vgs(th)
V
GS
3mA
I
I
D
G
Qgs1
Qgs2
Qgd
Qgodr
Current Sampling Resistors
Fig 15a.
Gate Charge Test Circuit
Fig 15b.
Gate Charge Waveform
V
(BR)DSS
15V
t
p
DRIVER
+
L
V
DS
D.U.T
AS
V
GS
R
G
V
DD
–
I
A
20V
0.01
Ω
t
p
I
AS
Fig 16b.
Unclamped Inductive Waveforms
Fig 16a.
Unclamped Inductive Test Circuit
L
D
V
DS
V
DS
90%
+
–
V
DD
10%
V
GS
D.U.T
V
GS
t
d(on)
t
d(off)
t
r
Pulse Width < 1µs
Duty Factor < 0.1%
t
f
Fig 17a.
Switching Time Test Circuit
Fig 17b.
Switching Time Waveforms
6
IRF6668PbF
Driver Gate Drive
P.W.
P
.
W.
Period
D.U.T
Period
D =
+
*
=10V
V
GS
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
–
D.U.
T
. I
W
aveform
SD
+
–
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
–
+
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
V
DD
•
di/dt controlled by R
G
•
Driver same type as D.U.T.
Re-Applied
Voltage
R
G
+
–
Body Diode
Inductor Current
Forward Drop
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
I
SD
Ripple
≤
5%
*
V
GS
= 5V for Logic Level Devices
Fig 18.
Diode Reverse Recovery Test Circuit
for N-Channel
HEXFET
®
Power MOSFETs
This includes all recommendations for stencil and
substrate designs.
7
IRF6668PbF
DirectFET
Outline Dimension, MZ Outline
(Medium Size Can, Z-Designation).
Please see DirectFET application note AN-1035 for all details regarding the assembly of DirectFET.
This includes all recommendations for stencil and
substrate designs.
DIMENSIONS
IMPERIAL
METRIC
CODE
MAX
MAX
MIN
6.25
4.80
3.85
0.35
0.68
0.68
0.93
0.63
0.28
1.13
2.53
MAX
0.250
0.201
0.156
0.018
0.028
0.028
0.038
0.026
0.013
0.050
0.105
0.0274
0.0031
0.007
0.246
0.189
0.152
0.014
0.027
0.027
0.037
0.025
0.011
0.044
0.100
0.0235
A
B
C
D
E
F
6.35
5.05
3.95
0.45
0.72
0.72
0.97
0.67
0.32
1.26
2.66
G
H
J
K
L
M
R
P
0.616 0.676
0.020
0.08
0.080 0.0008
0.003
0.17
DirectFET
Part Marking
8
IRF6668PbF
DirectFET
Tape & Reel Dimension (Showing component orientation).
NOTE: Controlling dimensions in mm
Std reel quantity is 4800 parts. (ordered as IRF6668TRPBF). For 1000 parts on 7″
reel, order
IRF6668TR1PBF
REEL DIMENSIONS
STANDARD OPTION
(QTY 4800)
TR1 OPTION
(QTY 1000)
METRIC
MAX
IMPERIAL
METRIC
MAX
IMPERIAL
CODE
MIN
MIN
12.992
0.795
0.504
0.059
3.937
N.C
MAX
N.C
MIN
MIN
6.9
MAX
N.C
N.C
0.50
N.C
N.C
0.53
N.C
N.C
A
B
C
D
E
F
330.0
20.2
12.8
1.5
177.77
19.06
13.5
1.5
N.C
N.C
13.2
N.C
N.C
18.4
14.4
15.4
N.C
0.75
0.53
0.059
2.31
N.C
N.C
N.C
0.520
N.C
12.8
N.C
100.0
N.C
N.C
58.72
N.C
N.C
0.724
0.567
0.606
13.50
12.01
12.01
G
H
0.488
0.469
0.47
0.47
12.4
11.9
11.9
11.9
LOADED TAPE FEED DIRECTION
DIMENSIONS
METRIC
IMPERIAL
CODE
MIN
MAX
0.319
0.161
0.484
0.219
0.209
0.264
N.C
MIN
7.90
3.90
11.90
5.45
5.10
6.50
1.50
1.50
MAX
8.10
4.10
12.30
5.55
5.30
6.70
N.C
A
B
C
D
E
F
0.311
0.154
0.469
0.215
0.201
0.256
0.059
0.059
G
H
1.60
0.063
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
9
Note: For
the most current drawings please refer to the IR website at:
