Infineon-Technologies-IRF7201TRPBF
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PD- 95022
IRF7201PbF
HEXFET
®
Power MOSFET
l
Generation V Technology
l
Ultra Low On-Resistance
l
N-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
A
A
D
1
2
3
4
8
S
S
S
G
V
DSS
= 30V
7
D
6
D
5
D
R
DS(on)
= 0.030
Ω
l
Lead-Free
Top View
Description
Fifth Generation HEXFET
®
power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low
on-resistance
per silicon area.
This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET MOSFETs
are well known for, provides the
designe
r
w
it
h
a
n
e
xtremel
y
e
fficien
t
a
n
d
r
eliabl
e
d
evice
for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powe
r
a
pplications. Wit
h
t
hes
e
i
mprovements
,
m
ultiple
device
s
c
a
n
b
e
u
se
d
i
n
a
n
a
pplicatio
n
w
it
h
d
ramatically
reduced board space.
The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
Max.
Units
V
DS
Drain- Source Voltage
30
V
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
7.3
5.8
A
58
P
D
@T
C
= 25°C
P
D
@T
C
= 70°C
2.5
W
Power Dissipation
1.6
0.02
Linear Derating Factor
W/°C
V
V
GS
Gate-to-Source Voltage
± 20
V
GSM
E
AS
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy
30
V
70
mJ
V/ns
°C
dv/dt
T
J,
T
STG
Peak Diode Recovery dv/dt
5.0
Junction and Storage Temperature Range
-55 to
+ 150
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
ꢀ
Typ.
–––
Max.
50
Units
°C/W
R
θ
JA
1
9/30/04
IRF7201PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
30 –––
–––
V
V
GS
= 0V, I
D
= 250µA
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
––– 0.024 –––
V/°C Reference
to 25°C, I
D
= 1mA
––– –––
0.030
––– –––
0.050
1.0 ––– –––
5.8 ––– –––
––– ––– 1.0
––– –––
25
––– ––– -100
––– ––– 100
V
GS
= 10V, I
D
= 7.3A
GS
= 4.5V, I
D
= 3.7A
R
DS(on)
Static Drain-to-Source On-Resistance
Ω
V
V
GS(th)
g
fs
Gate Threshold Voltage
V
S
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 15V, I
D
= 2.3A
Forward Transconductance
V
DS
= 24V, V
GS
= 0V
I
DSS
I
GSS
Drain-to-Source Leakage Current
µA
nA
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
GS
= 20V
Q
g
––– 19
28
I
D
= 4.6A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
––– 2.3 3.5
––– 6.3 9.5
––– 7.0 –––
––– 35 –––
––– 21 –––
––– 19 –––
––– 550 –––
––– 260 –––
––– 100 –––
nC V
DS
= 24V
V
GS
= 10V, See Fig. 10
V
DD
= 15V
I
D
= 4.6A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 6.2
Ω
R
D
= 3.2
Ω
,
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
pF
V
DS
= 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
I
S
2.5
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
58
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
––– ––– 1.2
––– 48
73
––– 73 110
V
T
J
= 25°C, I
S
= 4.6A, V
GS
= 0V
ns
T
J
= 25°C, I
F
= 4.6A
Q
rr
nC di/dt
= 100A/µs
Notes:
Repetitive rating;
pulse width limited by
I
SD
≤
4.6A, di/dt
≤
120A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
150°C
,
max. junction temperature. (See fig. 11)
V
DD
= 15V, starting T
J
= 25°C, L = 6.6mH
R
G
= 25
Ω
, I
AS
= 4.6A. (See Figure 8)
Pulse width
≤
300µs; duty cycle
≤
2%
.
ꢀ
When mounted on 1 inch square copper board,
t<10 sec
2
IRF7201PbF
100
10
1
100
10
1
VGS
15V
VGS
15V
TOP
TOP
10V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
7.0V
5.5V
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
3.0V
3.0V
20µs PULSE WIDTH
= 25°C
20µs PULSE WIDTH
T
J
T
J
= 150°C
A
A
0.1
1
10
0.1
1
10
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
100
T
J
= 25°C
T
J
= 150°C
10
T =
150°C
J
10
T =
25°C
J
1
V
DS
= 10V
20µs PULSE WIDTH
V
GS
= 0V
A
0.1
1
5.5
A
0.4
0.6
0.8
1.0
1.2
3.0
3.5
4.0
4.5
5.0
V
, Source-to-Drain Voltage (V)
V
GS
, Gate-to-Source Voltage (V)
SD
Fig 4.
Typical Source-Drain Diode
Fig 3.
Typical Transfer Characteristics
Forward Voltage
3
IRF7201PbF
0.20
0.15
0.10
0.05
0.00
2.0
I
= 4.6A
D
1.5
1.0
0.5
0.0
V
GS
= 4.5V
V
= 10V
GS
30
V
= 10V
GS
A
A
0
10
20
40
-60 -40 -20
0
20 40 60 80
100 120 140 160
T ,
Junction Temperature (°C)
J
I
, Drain Current (A)
D
Fig 5.
Normalized On-Resistance
Fig 6.
On-Resistance Vs. Drain Current
Vs. Temperature
200
0.05
I
D
TOP
2.1A
3.7A
BOTTOM 4.6A
160
120
80
40
0
0.04
0.03
0.02
I
= 7.3A
D
A
150
A
2
4
6
8
10
12
14
16
25
50
75
100
125
Starting T
, Junction Temperature (°C)
J
V
, Gate-to-Source Voltage (V)
GS
Fig 8.
Maximum Avalanche Energy
Vs. Drain Current
Fig 7.
On-Resistance Vs. Gate Voltage
4
IRF7201PbF
20
16
12
8
1000
800
600
400
200
0
I
= 4.6A
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C
+ C
,
C
SHORTED
V
V
= 24V
= 15V
gs
gd
gd
ds
DS
DS
= C
= C
+ C
ds
gd
C
iss
C
oss
4
C
rss
0
A
A
0
5
10
15
20
25
30
1
10
100
Q ,
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 10.
Typical Gate Charge Vs.
Fig 9.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
Notes:
1. Duty factor D =
2. Peak T
=
P
J
SINGLE PULSE
t /
t
1
x Z
(THERMAL RESPONSE)
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRF7201PbF
SO-8 Package
Outline
Dimensions are shown in milimeters (inches)
IN
C
H
ES
MI
L
LI
M
E
TERS
DIM
A
D
B
M
I
N
.0532
MAX
.0688
.0098
.020
M
I
N
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1
.
0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 B
A
S
IC
1.27 B
A
S
IC
0.635
B
A
S
I
C
e1
.
025
B
A
S
IC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F
O
OT
P
RINT
8X 0.72 [.028]
NOT
E
S :
1. DI
M
E
N
S
I
O
NING
&
T
O
L
ER
A
NC
I
N
G
P
ER
A
S
M
E Y14.5M-1994.
2.
C
O
N
T
R
O
L
LING
DI
M
E
N
S
I
O
N: MI
L
LI
M
E
TER
3. DI
M
E
NS
I
O
NS A
R
E S
H
O
WN IN MIL L IME T E RS
[
I
N
C
H
ES ].
4.
O
U
T
L INE
C
O
N
F OR MS
T O
J
EDEC
O
U T
L
INE
MS -012
A
A.
5
6
7
D
I
M
E
N
S
I
O
N DO
E
S
N
OT INC
L
UDE
M
O
L
D PR
O
T
RUSI
O
N
S
.
MO
L
D PR
O
T
RUSI
O
NS NOT
T
O E
X
C
E
ED
0
.15 [.006].
6.46 [.255]
D
I
M
E
N
S
I
O
N DO
E
S
N
OT INC
L
UDE
M
O
L
D PR
O
T
RUSI
O
N
S
.
MO
L
D PR
O
T
RUSI
O
NS NOT
T
O E
X
C
E
ED
0
.25 [.010].
D
I
M
E
N
S
I
O
N
I
S THE LEN
G
T
H
O
F
L
E
A
D
F
O
R
S
O
L
D
ERING
T
O
ASUBSTR
A
T
E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
E
X
A
M
P
LE: THIS IS
A
N
I
RF
7
101 (MO
S
FET)
DAT E
CODE (YWW)
P =
DE S I
G
N
AT E S
L E AD-F
R
E E
PR
O
D
U
C
T (O
P
TI
O
NA
L
)
Y =
L
A
S
T
D
I
G
I
T
O
F
T
HE
Y
E
A
R
WW =
WE E K
XXXX
F
7
101
IN
T
ER
N
A
T
I
O
NAL
RE
C
T
I
FIER
L
O
GO
A =
A
S S E MB
L
Y S IT E
C
ODE
L
O
T CODE
P
A
R
T NU
M
B
ER
6
IRF7201PbF
SO-8
T
a
pe and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
7
