Infineon-Technologies-IRF7306TRPBF
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PD – 95178
IRF7306PbF
HEXFET
®
Power MOSFET
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual P-Channel Mosfet
l
Surface Mount
1
2
8
S1
G1
D1
V
DSS
= -30V
7
D1
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
3
4
6
S2
D2
5
G2
D2
R
DS(on)
= 0.10
Ω
l
Lead-Free
Top View
Description
Fift
h
G
eneratio
n
H
EXFET
s
f
ro
m
I
nternationa
l
R
ectifier
utilize advanced processing techniques to achieve
the lowest possible on-resistance per silicon area.
This benefit, combined with the fast switching speed
and ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient device for use in a wide
variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
power applications.
With these improvements,
multiple devices can be used in an application with
dramatically reduced board space.
The package is
designed for vapor phase, infra red, or wave soldering
techniques. Power
dissipation of greater than 0.8W
is possible in a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
10 Sec. Pulsed Drain Current, V
GS
@ -10V
Max.
-4.0
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
-3.6
A
I
D
@ T
A
= 70°C
-2.9
I
DM
-14
P
D
@T
A
= 25°C
Power Dissipation
2.0
W
W/°C
V
Linear Derating Factor
0.016
±20
V
GS
Gate-to-Source Voltage
dv/dt
T
J
,
T
STG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
-5.0
V/ns
°C
-55 to
+ 150
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
R
θ
JA
Maximum Junction-to-Ambient
62.5
°C/W
10/7/04
IRF7306PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
-30
Conditions
V
GS
= 0V, ID = -250µA
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
-0.037
V/°C Reference
to 25°C, I
D
= -1mA
0.10
0.16
-1.0
2.5
-1.0
-25
-100
100
25
2.9
9.0
11
17
25
18
V
GS
= -10V, I
D
= -1.8A
V
GS
= -4.5V, I
D
= -1.5A
V
DS
= V
GS
, I
D
= -250µA
V
DS
= -24V, I
D
= -1.8A
V
DS
= -24V, V
GS
= 0V
V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
V
GS
= -20V
R
DS(ON)
Static Drain-to-Source On-Resistance
Ω
V
GS(th)
g
fs
Gate Threshold Voltage
V
S
Forward Transconductance
µA
nA
I
D
SS
I
GSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
GS
= 20V
Q
g
Q
gs
Q
gd
t
d(on)
t
r
I
D
= -1.8A
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
nC V
DS
= -24V
V
GS
= -10V, See Fig. 6 and 12
V
DD
= -15V
Ris
e
T
ime
I
D
= -1.8A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fal
l
T
ime
R
G
= 6.0
Ω
R
D
= 8.2
Ω,
See Fig. 10
D
L
D
L
S
Internal Drain Inductance
Internal Source Inductance
4.0
6.0
Between lead tip
nH
pF
G
and center of die contact
S
C
iss
C
oss
C
rss
Input Capacitance
440
200
93
V
GS
= 0V
Output Capacitance
V
DS
= -25V
Reverse
Transfer
Capacitance
=
1.0MHz,
See
Fig.
5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
I
S
MOSFE
T
s
ymbol
showing the
-2.5
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
-14
S
V
SD
t
rr
Diode Forward Voltage
-1.0
5380
66
99 nC
di/dt = 100A/µs
V
T
J
= 25°C, I
S
= -1.8A, V
GS
= 0V
Reverse
Recovery
Time
ns
J
=
T
2
5°C, I
F
= -1.8A
Q
rr
t
on
Reverse RecoveryCharge
Forward Turn-On Time
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating;
pulse width limited by
Pulse width
≤
300µs; duty cycle
≤
2%.
max. junction temperature. ( See fig. 11 )
Surface mounted on FR-4 board,
t
≤
10sec.
I
SD
≤
-1.8A, di/dt
≤
90A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
IRF7306PbF
100
10
1
100
10
1
VGS
– 15V
– 10V
– 8
.
0
V
– 7
.
0
V
– 6
.
0
V
– 5
.
5
V
– 5
.
0
V
VGS
– 15V
– 10V
– 8.0V
– 7.0V
– 6.0V
– 5.5V
– 5.0V
TOP
TOP
BOTTOM –
4.5V
BOTTOM –
4.5V
-4.5V
-4.5V
20µs PULSE WIDTH
20µs PULSE WIDTH
T
J
= 25°C
T
J
= 150°C
A
100
A
0.1
1
10
0.1
1
10
100
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Drain-to-Source Voltage (V)
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
2.0
100
10
1
I
= -3.0A
D
T =
25°C
J
1.5
1.0
0.5
0.0
T
J
= 150°C
V
DS
= -15V
20µs PULSE WIDTH
V
= -10V
GS
A
10
A
4
5
6
7
8
9
-60 -40 -20
0
20 40 60 80
100 120 140 160
-V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature (°C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs
.
T
emperature
IRF7306PbF
1000
20
16
12
8
I
V
= -3.0A
= -24V
V
C
C
C
= 0V,
f = 1MHz
D
DS
GS
iss
rss
oss
= C
+ C
,
C
SHORTED
gs
gd
gd
ds
= C
= C
+ C
800
600
400
200
0
ds
gd
C
C
iss
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 12
0
A
A
1
10
100
0
5
10
15
20
25
-V ,
Drain-to-Source Voltage (V)
Q
, Total Gate Charge (nC)
DS
G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs.
Drain-to-Sourc
e
V
oltage
Gate-to-Sourc
e
V
oltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
10
T =
150°C
J
100us
1ms
T =
25°C
J
1
°
T =
25 C
C
°
T =
150 C
Single Pulse
J
10ms
V
= 0V
GS
A
0.1
0.0
0.3
0.6
0.9
1.2
1.5
1
10
100
-V ,
Source-to-Drain Voltage (V)
-V ,
Drain-to-Source Voltage (V)
DS
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forwar
d
V
oltage
IRF7306PbF
4.0
3.0
2.0
1.0
0.0
R
D
V
DS
V
GS
D.U.T.
R
G
–
+
V
DD
-10
V
Puls
e
W
idth
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T ,
Case Temperature
( C)
C
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Ambien
t
T
emperature
Fig 10b.
Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
=
P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fi
g
1
1.
Maximu
m
E
ffectiv
e
T
ransien
t
T
herma
l
I
mpedance
,
J
unction-to-Ambient
IRF7306PbF
Current Regulator
Same Type as D.U.
T
.
50K
Ω
.2
µ
F
.3
µ
F
12V
Q
G
-10 V
–
V
+
DS
D.U.
T
.
Q
Q
GD
GS
V
GS
V
G
-3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 12a.
Basic Gate Charge Waveform
Fig 12b.
Gate Charge Test Circuit
IRF7306PbF
Peak Diode Recovery dv/dt Test Circuit
+
–
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.T
+
–
–
+
**
R
G
•
dv/dt controlled by R
G
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
+
–
*
V
DD
V
GS
*
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P
.
W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.
T
. I
W
aveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple
≤
5%
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
Fi
g
1
3.
Fo
r
P
-Channe
l
H
EXFETS
IRF7306PbF
SO-8 Package
Outline
Dimensions are shown in milimeters (inches)
IN
C
H
ES
MI
L
LI
M
E
TERS
DIM
A
D
B
M
I
N
.0532
MAX
.0688
.0098
.020
M
I
N
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1
.
0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 B
A
S
IC
1.27 B
A
S
IC
0.635
B
A
S
I
C
e1
.
025
B
A
S
IC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F
O
OT
P
R INT
8X 0.72 [.028]
NOT
E
S :
1. DI
M
E
N
S
I
O
N
I
N
G
&
T
O
L
ER
A
NCING P
E
R
A
S
M
E
Y
14.5
M
–
1994.
2.
C
O
N
T
R
O
L
LI
N
G
DIMEN
S
I
O
N: MI
L
LI
M
E
TER
3. DI
M
E
N
S
I
O
NS A
R
E
S
H
O
WN
I
N
M
I
LLI
M
E
TERS [IN
C
H
E
S
]
.
4.
O
U
T
L INE
C
ONF OR MS
T O
J
EDE C
O
U T L
I
NE
M
S
–
012
A
A.
5
6
7
D
I
M
E
N
S
I
O
N DO
E
S
N
OT
I
N
C
L
U
D
E MO
L
D PR
O
T
R
USI
O
N
S
.
MO
L
D PR
O
T
R
USI
O
NS NOT
T
O E
X
C
E
ED 0.15 [.006].
6.46 [.255]
D
I
M
E
N
S
I
O
N DO
E
S
N
OT
I
N
C
L
U
D
E MO
L
D PR
O
T
R
USI
O
N
S
.
MO
L
D PR
O
T
R
USI
O
NS NOT
T
O E
X
C
E
ED 0.25 [.010].
D
I
M
E
N
S
I
O
N
I
S THE LEN
G
T
H
O
F
L
E
A
D
F
O
R
S
O
L
DERIN
G
TO
ASUBSTR
A
T
E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
E
X
A
M
P
LE: THIS IS
A
N
I
RF
7
101 (MO
S
FET)
DAT E
CODE (YWW)
P =
DE S I
G
N
AT E S
L E AD-F
R
E E
PR
O
D
U
C
T (O
P
TI
O
NA
L
)
Y =
L
A
S
T
D
I
G
I
T
O
F
T
HE
Y
E
A
R
WW =
WE E K
XXXX
F
7
101
IN
T
ER
N
A
T
I
O
NAL
RE
C
T
I
FIER
L
O
GO
A =
A
S S E MB
L
Y S IT E
C
ODE
L
O
T CODE
P
A
R
T NU
M
B
ER
IRF7306PbF
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
