Infineon-Technologies-IRF7316TRPBF

PD – 95182  

IRF7316PbF  

HEXFET

®

Power MOSFET  

l

Generation V Technology  

l

Ultra Low On-Resistance  

l

Dual P-Channel MOSFET  

l

Surface Mount  

l

Fully Avalanche Rated  

l

Lead-Free  

1

2

3

4

8

S1  

G1  

D1  

V

DSS

= -30V  

7

D1  

6

S2  

D2  

5

G2  

D2  

R

DS(on)

= 0.058

Ω  

Top View  

Description  

Fifth Generation HEXFETs from International Rectifier  

utilize advanced processing techniques to achieve  

extremely low

 

on-resistance per silicon area.

 

This  

benefit, combined with the fast switching speed and  

ruggedized device design that HEXFET Power  

MOSFETs are well known for, provides the designer  

with an extremely efficient and reliable device for use  

in a wide variety of applications.  

The SO-8 has been modified through a customized  

leadframe for enhanced thermal characteristics and  

multiple-die capability making it ideal in a variety of  

powe

r

a

pplications. Wit

h

t

hes

e

i

mprovements

,

m

ultiple  

device

s

c

a

n

b

e

u

se

d

i

n

a

n

a

pplicatio

n

w

it

h

d

ramatically  

reduced board space.

 

The package is designed for  

vapor phase, infra red, or wave soldering techniques.  

SO-8  

Absolute Maximum Ratings ( T

A

= 25°C Unless Otherwise Noted)  

Symbol  

V

DS  

Maximum  

-30  

Units  

Drain-Source Voltage  

Gate-Source Voltage  

V

V

GS  

± 20  

T

A

= 25°C  

T

A

= 70°C  

-4.9  

-3.9  

-30  

-2.5  

Continuous Drain Current

ꢀ

 

I

D  

A

Pulsed Drain Current  

I

DM  

I

S  

Continuous Source Current (Diode Conduction)  

T

A

= 25°C  

T

A

= 70°C  

2.0  

1.3  

Maximum Power Dissipation

ꢀ  

P

D

W

Single Pulse Avalanche Energy  

Avalanche Current  

E

AS  

I

AR  

140  

mJ  

A

-2.8  

Repetitive Avalanche Energy  

Peak Diode Recovery dv/dt

ƒ  

Junction and Storage Temperature Range  

E

AR  

0.20  

mJ  

V/ ns  

°C  

dv/dt  

T

J

,

T

STG  

-5.0  

-55 to + 150  

Thermal Resistance Ratings  

Parameter  

Symbol  

Limit  

Units  

Maximum Junction-to-Ambient

ꢀ  

R

θ

JA  

62.5  

°C/W  

10/7/04  

IRF7316PbF  

Electrical Characteristics @ T

J

= 25°C (unless otherwise specified)  

Parameter  

Min. Typ. Max. Units  

Conditions  

V

(BR)DSS  

Drain-to-Source Breakdown Voltage  

-30 ––– –––  

V

V

GS

= 0V, I

D

= -250µA  

∆

V

(BR)DSS

/

∆

T

J

Breakdown Voltage Temp. Coefficient

 

––– 0.022 –––

 

V/°C Reference

 

to 25°C, I

D

= -1mA  

––– 0.042

 

0.058  

––– 0.076

 

0.098  

-1.0 ––– –––  

––– 7.7 –––  

––– ––– -1.0  

––– ––– -25  

––– ––– 100  

––– –––

 

-100  

V

GS

= -10V, I

D

= -4.9A

„  

V

GS

= -4.5V, I

D

= -3.6A

„  

V

DS

= V

GS

, I

D

= -250µA  

V

DS

= -15V, I

D

= -4.9A  

V

DS

= -24V, V

GS

= 0V  

V

DS

= -24V, V

GS

= 0V, T

J

= 55°C  

V

GS

= -20V  

R

DS(on)  

Static Drain-to-Source On-Resistance  

Ω

V

GS(th)  

g

fs  

Gate Threshold Voltage  

V

S

Forward Transconductance  

I

DSS  

I

GSS  

Drain-to-Source Leakage Current  

µA  

nA  

Gate-to-Source Forward Leakage  

Gate-to-Source Reverse Leakage  

Total Gate Charge  

V

GS

= 20V  

Q

g  

––– 23  

34  

I

D

= -4.9A  

Q

gs  

Q

gd  

t

d(on)  

t

r  

Gate-to-Source Charge  

––– 3.8 5.7  

––– 5.98.9  

nC V

DS

= -15V  

V

GS

= -10V, See Fig. 10

„  

Gate-to-Drain  

Turn-On  

(“Miller”)  

Delay  

Charge  

Time  

––– 13

 

= –

1

1

5

9

V

V  

DD  

Rise Time  

––– 13  

––– 34  

––– 32  

20  

51  

48  

I

D

= -1.0A  

ns  

t

d(off)  

t

f  

Turn-Off Delay Time  

Fal

l

T

ime  

R

G

= 6.0

Ω  

R

D

= 15

Ω

„  

V

GS

= 0V  

C

iss  

C

oss  

C

rss  

Input Capacitance  

Output Capacitance  

––– 710 –––  

––– 380 –––  

––– 180 –––  

pF  

V

DS

= -25V  

Reverse Transfer Capacitance  

ƒ = 1.0MHz, See Fig. 5  

Source-Drain Ratings and Characteristics  

Parameter  

Continuous Source Current  

(Body Diode)  

Min. Typ. Max. Units  

Conditions  

MOSFET symbol  

showing the  

D

S

I

S  

––– ––– -2.5  

A

I

S

M  

Pulsed Source Current  

(Body Diode)

  

integral reverse  

G

––– –––

 

-30  

p-n junction diode.  

V

SD  

t

rr  

Diode Forward Voltage  

Reverse Recovery Time  

Reverse RecoveryCharge  

––– -0.78 -1.0  

V

T

J

= 25°C, I

S

= -1.7A, V

GS

= 0V

ƒ  

T

J

= 25°C, I

F

= -1.7A  

––– 44  

––– 42  

66  

63  

ns  

nC  

Q

rr  

di/dt = 100A/µs

ƒ  

Notes:  



Repetitive rating;

 

pulse width limited by  

ƒ

I

SD

≤

-2.8A, di/dt

≤

150A/µs, V

DD

≤

V

(BR)DSS  

T

J

≤

150°C  

,

max. junction temperature. ( See fig. 11 )  

‚

Starting T

J

= 25°C, L = 35mH  

R

G

= 25

Ω

, I

AS

= -2.8A.  

„

Pulse width

≤

300µs; duty cycle

≤

2%.  

ꢀ

Surface mounted on FR-4 board,

 

t

≤

10sec.  

IRF7316PbF  

100  

10  

1

100  

10  

1

VGS  

– 15V  

– 10V  

– 7.0V  

– 5.5V  

– 4.5V  

– 4.0V  

– 3.5V  

VGS  

– 15V  

– 10V  

– 7.0V  

– 5.5V  

– 4.5V  

– 4.0V  

– 3.5V  

TOP  

TOP  

BOTTOM – 3.0V  

BOTTOM – 3.0V  

-3.0V  

-3.0V  

20µs PULSE WIDTH  

T

J

= 25°C  

20µs PULSE WIDTH  

T

J

= 150°C  

A

10  

A

10  

0.1  

1

0.1  

1

-V ,

 

Drain-to-Source Voltage (V)  

DS  

-V ,

 

Drain-to-Source Voltage (V)  

DS  

Fig 1.

 

Typical Output Characteristics  

Fig 2.

 

Typical Output Characteristics  

100  

100  

T

J

= 25°C  

T =

 

150°C  

J

T =

 

150°C  

J

10  

10  

T =

 

25°C  

J

V

DS

= -10V  

20µs PULSE WIDTH  

V

= 0V  

GS  

1

A

1

3.0  

3.5  

4.0  

4.5  

5.0  

5.5  

0.4  

0.6  

0.8  

1.0  

1.2  

1.4  

-V

GS

, Gate-to-Source Voltage (V)  

-V ,

 

Source-to-Drain Voltage (V)  

SD  

Fig 4.

 

Typical Source-Drain Diode  

Fig 3.

 

Typical Transfer Characteristics  

Forward Voltage  

IRF7316PbF  

0.6  

0.5  

0.4  

0.3  

0.2  

0.1  

0.0  

2.0  

–

4

–

4

.

9

.

9

A

A  

=

I

D

1.5  

1.0  

0.5  

0.0  

V

= -4.5V  

GS  

V

= -10V  

GS  

–

–

10V  

V

=

1

0V  

GS  

A

-60 -40 -20  

0

20 40 60 80

 

100 120 140 160  

°

0

10  

20  

30  

T ,

 

Junction Temperature (

 

C)  

J

-I

D

, Drain Current

 

(A)  

Fig 5.

 

Normalized On-Resistance  

Fig 6.

 

Typical On-Resistance Vs. Drain  

Vs. Temperature  

Current  

0.16  

300  

I

D

-1.3A  

TOP  

-2.2A  

BOTTOM -2.8A  

250  

200  

150  

100  

50  

0.12  

0.08  

0.04  

0.00  

I

= -4.9A  

D

0

A

25  

50  

75  

100  

125  

150  

0

3

6

9

12  

15  

°

-V

GS

, Gate -to-Source Voltage

 

(V)  

Starting T

 

, Junction Temperature (

 

C)  

J

Fig 8.

 

Maximum Avalanche Energy  

Fig 7.

 

Typical On-Resistance Vs. Gate  

Vs. Drain Current  

Voltage  

IRF7316PbF  

1400  

1200  

1000  

800  

600  

400  

200  

0

20  

16  

12  

8

V

GS

= 0V  

f = 1 MHz  

I

D

= -4.9A  

Ciss = Cgs

 

+ Cgd +

 

Cds  

Crss = Cgd  

SHORTED  

V

=-15V  

DS  

Coss = Cds

 

+ Cgd  

C

iss  

C

oss  

C

rss  

4

0

A

0

10  

20  

30  

40  

1

10  

100  

Q

, Total Gate Charge (nC)  

G

–

V

, Drain-to-Source Voltage (V)  

DS  

Fig 10.

 

Typical Gate Charge Vs.  

Fig 9.

 

Typical Capacitance Vs.  

Gate-to-Source Voltage  

Drain-to-Source Voltage  

100  

10  

1

0.50  

0.20  

0.10  

0.05  

0.02  

0.01  

P

2

DM  

t

1

t

2

Notes:  

1. Duty factor D = t

 

/ t  

SINGLE PULSE  

1

(THERMAL RESPONSE)  

2. Peak T

 

=

P  

J

x Z  

+ T  

thJA A  

DM  

0.1  

0.00001  

0.0001  

0.001  

0.01  

0.1  

1

10  

100  

t ,

 

Rectangular Pulse Duration (sec)  

1

Fig 11.

 

Maximum Effective Transient Thermal Impedance, Junction-to-Ambient  

IRF7316PbF  

SO-8 Package

 

Outline  

Dimensions are shown in milimeters (inches)  

IN

C

H

ES  

MI

L

LI

M

E

TERS  

DIM  

A

D

B

M

I

N  

.0532  

MAX  

.0688  

.0098  

.020  

M

I

N  

1.35  

0.10  

0.33  

0.19  

4.80  

3.80  

MAX  

1.75  

0.25  

0.51  

0.25  

5.00  

4.00  

5

A

E

A1

.

0040  

b

c

D

E

.013  

8

1

7

2

6

3

5

.0075  

.189  

.0098  

.1968  

.1574  

6

H

0.25 [.010]  

A

.1497  

4

e

.050 B

A

S

IC  

1.27 B

A

S

IC  

0.635

B

A

S

I

C  

e1

.

025

 

B

A

S

IC  

H

K

L

.2284  

.0099  

.016  

0°  

.2440  

.0196  

.050  

8°  

5.80  

0.25  

0.40  

0°  

6.20  

0.50  

1.27  

8°  

e

6X  

y

e1  

A

K x 45°  

A

C

y

0.10 [.004]  

8X c  

A1  

B

8X L  

8X b  

0.25 [.010]  

7

C

F

O

OT

P

RINT  

8X 0.72 [.028]  

NOT

E

S :  

1. DI

M

E

N

S

I

O

NING

 

&

T

O

L

ER

A

NC

I

N

G

P

ER

A

S

M

E Y14.5M-1994.  

2.

C

O

N

T

R

O

L

LING

 

DI

M

E

N

S

I

O

N: MI

L

LI

M

E

TER  

3. DI

M

E

NS

 

I

O

NS A

R

E S

 

H

O

WN IN MIL L IME T E RS

 

[

I

N

C

H

ES ].  

4.

O

U

T

 

L INE

 

C

O

N

F OR MS

 

T O

J

EDEC

O

U T

L

INE

 

MS -012

A

A.  

5

6

7

D

I

M

E

N

S

I

O

N DO

E

S

N

OT INC

L

UDE

M

O

L

D PR

O

T

RUSI

O

N

S

.  

MO

L

D PR

O

T

RUSI

O

NS NOT

T

O E

X

C

E

ED

0

.15 [.006].  

6.46 [.255]  

D

I

M

E

N

S

I

O

N DO

E

S

N

OT INC

L

UDE

M

O

L

D PR

O

T

RUSI

O

N

S

.  

MO

L

D PR

O

T

RUSI

O

NS NOT

T

O E

X

C

E

ED

0

.25 [.010].  

D

I

M

E

N

S

I

O

N

I

S THE LEN

G

T

H

O

F

L

E

A

D

F

O

R

S

O

L

D

ERING

T

O  

ASUBSTR

A

T

E.  

3X 1.27 [.050]  

8X 1.78 [.070]  

SO-8 Part Marking Information (Lead-Free)  

E

X

A

M

P

LE: THIS IS

A

N

I

RF

7

101 (MO

S

FET)  

DAT E

 

CODE (YWW)  

P =

 

DE S I

G

N

AT E S

 

L E AD-F

R

E E  

PR

O

D

U

C

T (O

P

TI

O

NA

L

)  

Y =

 

L

A

S

T

D

I

G

I

T

O

F

T

HE

Y

E

A

R  

WW =

 

WE E K  

XXXX  

F

7

101  

IN

T

ER

N

A

T

I

O

NAL  

RE

C

T

I

FIER  

L

O

GO  

A =

 

A

S S E MB

L

Y S IT E

 

C

ODE  

L

O

T CODE  

P

A

R

T NU

M

B

ER  

IRF7316PbF  

SO-8 Tape and Reel  

Dimensions are shown in milimeters (inches)  

TERMINAL NUMBER 1  

12.3 ( .484 )  

11.7 ( .461 )  

8.1 ( .318 )  

7.9 ( .312 )  

FEED DIRECTION  

NOTES:  

1. CONTROLLING

 

DIMENSION : MILLIMETER.  

2. ALL

 

DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).  

3. OUTLINE

 

CONFORMS TO EIA-481 & EIA-541.  

330.00  

(12.992)  

MAX.  

14.40 ( .566 )  

12.40 ( .488 )  

NOTES :  

1. CONTROLLING DIMENSION : MILLIMETER.  

2. OUTLINE CONFORMS TO EIA-481 & EIA-541.  

Data and specifications subject to change without notice.  

This product has been designed and qualified for the Consumer market.  

Qualifications Standards can be found on IR’s Web site.  

IR WORLD HEADQUARTERS:

233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105  

TAC Fax: (310) 252-7903  

.

10/04