Infineon-Technologies-IRF7331TRPBF
| Part # | Infineon-Technologies-IRF7331TRPBF |
Download  | Infineon-Technologies-IRF7331TRPBF |
PD – 95266A
IRF7331PbF
HEXFET
®
Power MOSFET
l
Ultra Low On-Resistance
l
Dual N-Channel MOSFET
l
Surface Mount
l
Available in Tape & Reel
l
Lead-Free
V
DSS
20V
R
DS(on)
max (m
W)
30@V
GS
= 4.5V
I
D
7.0A
45@V
GS
= 2.5V
5.6A
Description
1
8
S1
D1
These N-Channel
HEXFET
®
power MOSFET
s from
International Rectifier utilize advanced processing
technique
s
t
o
a
chiev
e
t
h
e
e
xtremel
y
l
o
w
o
n-resistance
per silicon area.
This benefit provides the designer
with an extremely efficient device for use in battery
and load management applications.
2
7
G1
S2
D1
3
4
6
D2
5
G2
D2
Top View
SO-8
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powe
r
a
pplications. Wit
h
t
hes
e
i
mprovements
,
m
ultiple
device
s
c
a
n
b
e
u
se
d
i
n
a
n
a
pplicatio
n
w
it
h
d
ramatically
reduced board space.
The package is designed for
vapor phase, infrared, or wave soldering technique
s.
Absolute Maximum Ratings
Parameter
Max.
Units
V
DS
Drain- Source Voltage
20
V
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
7.0
5.5
A
28
2.0
P
D
@T
A
= 25°C
P
D
@T
A
= 70°C
Power Dissipation
Power Dissipation
W
1.3
Linear Derating Factor
16
mW/°C
V
GS
Gate-to-Source Voltage
± 12
V
T
J,
T
STG
Junction and Storage Temperature Range
-55 to
+ 150
°C
Thermal Resistance
Symbol
R
θ
JL
Parameter
Junction-to-Drain Lead
Typ.
–––
Max.
42
Units
R
θ
JA
Junction-to-Ambient
–––
62.5
°C/W
1
07/09/08
IRF7331PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20 –––
–––
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
V
GS
= 0V, I
D
= 250µA
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
––– 0.013 –––
V/°C Reference
to 25°C, I
D
= 1mA
––– –––
––– –––
30
45
V
GS
= 4.5V, I
D
= 7.0A
V
GS
= 2.5V, I
D
= 5.6A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 10V, I
D
= 7.0A
R
DS(on)
Static Drain-to-Source On-Resistance
m
Ω
V
GS(th)
g
fs
Gate Threshold Voltage
0.6 ––– 1.2
14 –––
–––
––– ––– 1.0
––– –––
25
––– ––– 100
––– ––– -100
V
S
Forward Transconductance
V
DS
= 16V, V
GS
= 0V
I
DSS
Drain-to-Source Leakage Current
µA
nA
V
DS
= 16V, V
GS
= 0V, T
J
= 70°C
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
V
GS
= 12V
I
GSS
V
GS
= -12V
I
D
= 7.0A
Q
g
––– 13
20
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
––– 3.7 –––
––– 2.1 –––
––– 7.6 –––
––– 22 –––
––– 110 –––
––– 50 –––
––– 1340 –––
––– 170 –––
––– 120 –––
nC V
DS
= 10V
V
GS
= 4.5V
V
DD
= 10V
I
D
= 1.0A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 53
Ω
V
GS
= 4.5V
C
iss
C
oss
C
rss
Input Capacitance
V
GS
= 0V
Output Capacitance
pF
V
DS
= 16V
Reverse Transfer Capacitance
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
D
S
I
S
MOSFET symbol
showing the
2.0
28
A
G
I
SM
Pulsed Source Current
(Body Diode)
integral reverse
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– 1.2
V
T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
––– 31
––– 15
47
23
ns
T
J
= 25°C, I
F
= 2.0A
Q
rr
nC di/dt
= 100A/µs
Notes:
Repetitive rating;
pulse width limited by
Surface mounted on 1 in square Cu board
max. junction temperature.
Pulse width
≤
400µs; duty cycle
≤
2%.
2
IRF7331PbF
100
10
1
1000
100
10
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
VGS
7.5V
4.5V
3.5V
3.0V
2.5V
2.0V
1.75V
TOP
TOP
BOTTOM 1.5V
BOTTOM 1.5V
1.50V
1
1.50V
20µs PULSE WIDTH
20µs PULSE WIDTH
°
T =
150 C
J
°
T =
25 C
J
0.1
0.1
0.1
1
10
100
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
2.0
7.0A
=
I
D
1.5
1.0
0.5
0.0
°
T =
25 C
J
°
T =
150 C
J
10
V
= 15V
DS
V
=
4
.5V
20µs PULSE WIDTH
GS
1
1.5
2.0
2.5
3.0
-60 -40 -20
0
20 40 60 80
100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T ,
Junction Temperature (
C)
J
GS
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRF7331PbF
8
6
4
2
0
2400
I
D
=
7.0A
V
C
= 0V,
f = 1 MHZ
GS
V
= 10V
= C
+ C
,
C
ds
SHORTED
DS
iss
gs
gd
C
= C
2000
1600
1200
800
400
0
rss
gd
C
= C
+ C
ds gd
oss
Ciss
Coss
Crss
1
10
100
0
4
8
12
16
20
Q
, Total Gate Charge (nC)
G
V
, Drain-to-Source Voltage (V)
DS
Fig 6.
Typical Gate Charge Vs.
Fig 5.
Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA
LIMITED BY R
(on)
DS
°
T =
150 C
J
100µsec
1msec
10msec
°
T =
25 C
J
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
1.0
0.1
0.1
0.2
0.4
0.6
0.8
1.2
0.1
1
10
100
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRF7331PbF
8.0
6.0
4.0
2.0
0.0
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T ,
Case Temperature
( C)
C
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Case Temperature
Fig 10b.
Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
=
P
J
x Z
+ T
thJA A
DM
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRF7331PbF
0.05
0.04
0.03
0.02
0.01
0.12
0.10
0.08
0.06
0.04
0.02
0.00
I
= 7.0A
D
V
= 2.5V
GS
V
= 4.5V
GS
2.0
4.0
6.0
8.0
0
5
10
15
20
25
30
V
Gate -to -Source Voltage
(V)
I
, Drain Current (A)
GS,
D
Fig 12.
Typical On-Resistance Vs.
Fig 13.
Typical On-Resistance Vs.
Gate Voltage
Drain Current
Current Regulator
Same Type as D.U.
T
.
50K
Ω
Q
Q
G
.2
µ
F
12V
.3
µ
F
V
GS
+
Q
V
GS
GD
DS
D.U.
T
.
–
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 14a.
Basic Gate Charge Waveform
Fig 14b.
Gate Charge Test Circuit
6
IRF7331PbF
60
50
40
30
20
10
0
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
I
= 250µA
D
0.0001 0.0010 0.0100 0.1000 1.0000
10.0000 100.0000
Time (sec)
-75 -50 -25
0
25
50
75 100
125 150
T
, Temperature ( °C )
J
Fig 16.
Typical Power Vs. Time
Fig 15.
Typical Vgs(th)
Vs.
Junction Temperature
7
IRF7331PbF
SO-8 Package Outline
(Mosfet & Fetky)
Dimensions are shown in milimeters (inches)
SO-8 Part Marking Information
8
IRF7331PbF
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
9
