Infineon-Technologies-IRF7341TRPBF
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PD -95199
IRF7341PbF
HEXFET
®
Power MOSFET
l
Generation V Technology
l
Ultra Low On-Resistance
l
Dual N-Channel Mosfet
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
1
2
3
4
8
S1
G1
S2
D1
V
DSS
= 55V
7
D1
6
D2
5
D2
G2
R
DS(on)
= 0.050
Ω
l
Lead-Free
Description
Top View
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area.
This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power
MOSFETs are well known for, provides the designer
with an extremely efficient and reliable device for use
in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of
powe
r
a
pplications. Wit
h
t
hes
e
i
mprovements
,
m
ultiple
devices can be used in an application with dramatically
reduced board space.
The package is designed for
vapor phase, infra red, or wave soldering techniques.
Power dissipation of greater than 0.8W is possible in
a typical PCB mount application.
SO-8
Absolute Maximum Ratings
Parameter
Max.
Units
V
DS
Drain- Source Voltage
55
V
I
D
@ T
C
= 25°C
I
D
@ T
C
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
4.7
3.8
A
38
P
D
@T
C
= 25°C
P
D
@T
C
= 70°C
2.0
W
Power Dissipation
1.3
Linear Derating Factor
0.016
± 20
30
W/°C
V
GS
Gate-to-Source Voltage
V
V
V
GSM
E
AS
Gate-to-Source Voltage Single Pulse tp<10µs
Single Pulse Avalanche Energy
72
dv/dt
T
J,
T
STG
Peak Diode Recovery dv/dt
5.0
V/ns
°C
Junction and Storage Temperature Range
-55 to
+ 150
Thermal Resistance
Parameter
Maximum Junction-to-Ambient
ꢀ
Typ.
–––
Max.
62.5
Units
°C/W
R
θ
JA
1
11/9/04
IRF7341PbF
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
55 –––
–––
V
V
GS
= 0V, I
D
= 250µA
∆
V
(BR)DSS
/
∆
T
J
Breakdown Voltage Temp. Coefficient
––– 0.059 –––
V/°C Reference
to 25°C, I
D
= 1mA
––– 0.043
0.050
––– 0.056
0.065
1.0 ––– –––
7.9 ––– –––
––– –––
2.0
––– –––
25
––– ––– -100
––– ––– 100
V
GS
= 10V, I
D
= 4.7A
R
DS(on)
Stati
c
D
rain-to-Sourc
e
O
n-Resistance
Ω
V
GS
= 4.5V, I
D
= 3.8A
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 10V, I
D
= 4.5A
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 55°C
V
GS
= -20V
V
GS(th)
g
fs
Gate Threshold Voltage
V
S
Forward Transconductance
I
DSS
I
GSS
Drain-to-Sourc
e
L
eakag
e
C
urrent
µA
nA
Gate-to-Source Forward Leakage
Gate-to-Sourc
e
R
evers
e
L
eakage
Total Gate Charge
V
GS
= 20V
Q
g
––– 24
36
I
D
= 4.5A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
––– 2.3 3.4
nC V
DS
= 44V
V
GS
= 10V, See Fig. 10
––– 7.0
––– 8.3
10
12
V
DD
= 28V
––– 3.2 4.8
I
D
= 1.0A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
––– 32
––– 13
48
20
R
G
= 6.0
Ω
R
D
= 16
Ω
,
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
––– 740 –––
––– 190 –––
––– 71 –––
Output Capacitance
pF
V
DS
= 25V
Reverse Transfer Capacitance
ƒ = 1.0MHz, See Fig. 9
Source-Drain Ratings and Characteristics
Parameter
Continuou
s
S
ourc
e
C
urrent
(Bod
y
D
iode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
I
S
2.0
A
G
I
SM
Pulsed Source Current
(Body Diode)
integra
l
r
everse
––– ––– 1.2
––– 60
90
––– 120 170
38
p-
n
j
unctio
n
d
iode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
V
T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
ns
T
J
= 25°C, I
F
= 2.0A
Q
rr
nC di/dt
= -100A/µs
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤
4.7A, di/dt
≤
220A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
150°C
,
Starting T
J
= 25°C, L = 6.5mH
Pulse width
≤
300µs; duty cycle
≤
2%.
R
G
= 25
Ω
, I
AS
= 4.7A. (See Figure 8)
ꢀ
When mounted on 1 inch square copper board,
t<10 sec
2
IRF7341PbF
100
10
1
100
10
1
VGS
15V
12V
10V
8.0V
6
4
.
.
0
5
V
V
4.0V
3.5V
VGS
15V
12V
10V
8.0V
TOP
TOP
4.5V
4.0V
3.5V
BOTTOM 3.0V
BOTTOM 3.0V
3.0V
3.0V
20µs PULSE WIDTH
°
T =
25 C
J
20µs PULSE WIDTH
°
T =
150 C
J
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
10
1
100
10
1
°
T =
25 C
J
°
T =
150 C
J
°
T =
150 C
J
°
T =
25 C
J
V
= 25V
DS
V
= 0 V
20µs PULSE WIDTH
GS
0.1
0.2
3
4
5 6
0.5
0.8
1.1
1.4
V
, Gate-to-Source Voltage (V)
V
,Source-to-Drain Voltage (V)
GS
SD
Fig 4.
Typical Source-Drain Diode
Fig 3.
Typical Transfer Characteristics
Forward Voltage
3
IRF7341PbF
2.5
0.120
0.100
0.080
0.060
0.040
4.7A
=
I
D
2.0
1.5
1.0
0.5
0.0
VGS = 4.5V
VGS = 10V
V
=
1
0V
GS
-60 -40 -20
0
20 40 60 80
100 120 140 160
°
0
10
20
30
40
T ,
Junction Temperature (
C)
J
I
, Drain Current (A)
D
Fig 6.
Typical On-Resistance Vs. Drain
Fig 5.
Normalized On-Resistance
Current
Vs. Temperature
0.12
0.10
0.08
0.06
0.04
200
I
D
TOP
2.1A
3.8A
160
120
80
40
0
BOTTOM 4.7A
I
= 4.7A
D
A
0
2
4
6
8
10
25
50
75
100
125
150
°
Starting T
, Junction Temperature
( C)
J
V
GS
, Gate-to-Source Voltage (V)
Fig 7.
Typical On-Resistance Vs. Gate
Fig 8.
Maximum Avalanche Energy
Voltage
Vs. Drain Current
4
IRF7341PbF
1200
1000
800
600
400
200
0
20
16
12
8
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
I =
4.5A
D
C
= C
+ C
iss
gs
gd ,
V
V
V
= 48V
= 30V
= 12V
DS
DS
DS
C
= C
rss
gd
C
= C
+ C
oss
ds
gd
C
iss
C
oss
4
C
rss
0
0
10
20
30
40
1
10
100
Q ,
Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 9.
Typical Capacitance Vs.
Fig 10.
Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
P
2
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
t
2
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
=
P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRF7341PbF
SO-8 Package
Outline
Dimensions are shown in milimeters (inches)
IN
C
H
ES
MIN MAX
.0532 .0688
M
I
LLI
M
E
TERS
DIM
A
D
B
M
I
N
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1 .0040
.0098
b
c
D
E
.013
.0075 .0098
.189 .1968
.020
8
1
7
2
6
3
5
6
H
0.25 [.010]
A
.1497 .1574
.050 B
A
S
IC
4
e
1.27 B
A
S
IC
e1
.
025
B
A
S
IC
0.635 B
A
S
IC
H
K
L
.2284 .2440
.0099 .0196
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
.016
0°
.050
8°
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F
O
OT
P
R INT
8X 0.72 [.028]
NOT
E
S :
1. DI
M
E
N
S
I
O
N
I
N
G
&
T
O
L
ER
A
NCING P
E
R
A
S
M
E
Y
14.5
M
–
1994.
2.
C
O
N
T
R
O
L
LI
N
G
DIMEN
S
I
O
N: MI
L
LI
M
E
TER
3. DI
M
E
N
S
I
O
NS A
R
E
S
H
O
WN
I
N
M
I
LLI
M
E
TERS [IN
C
H
E
S
]
.
4.
O
U
T
L INE
C
ONF OR MS
T O
J
EDE C
O
U T L
I
NE
M
S
–
012
A
A.
5
6
7
D
I
M
E
N
S
I
O
N DO
E
S
N
OT
I
N
C
L
U
D
E MO
L
D PR
O
T
R
USI
O
N
S
.
MO
L
D PR
O
T
R
USI
O
NS NOT
T
O E
X
C
E
ED 0.15 [.006].
6.46 [.255]
D
I
M
E
N
S
I
O
N DO
E
S
N
OT
I
N
C
L
U
D
E MO
L
D PR
O
T
R
USI
O
N
S
.
MO
L
D PR
O
T
R
USI
O
NS NOT
T
O E
X
C
E
ED 0.25 [.010].
D
I
M
E
N
S
I
O
N
I
S THE LEN
G
T
H
O
F
L
E
A
D
F
O
R
S
O
L
DERIN
G
TO
ASUBSTR
A
T
E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking Information (Lead-Free)
E
X
A
M
P
LE: THIS IS
A
N
I
RF
7
101 (MO
S
FET)
DAT E
CODE (YWW)
P =
DE S I
G
N
AT E S
L E AD-F
R
E E
PR
O
D
U
C
T (O
P
TI
O
NA
L
)
Y =
L
A
S
T
D
I
G
I
T
O
F
T
HE
Y
E
A
R
WW =
WE E K
XXXX
F
7
101
IN
T
ER
N
A
T
I
O
NAL
RE
C
T
I
FIER
L
O
GO
A =
A
S S E MB
L
Y S IT E
C
ODE
L
O
T CODE
P
A
R
T NU
M
B
ER
6
IRF7341PbF
SO-8
T
a
pe and Reel
Dimensions are shown in milimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
7
