Infineon-Technologies-IRF7401TRPBF
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IRF7401PbF-1
HEXFET
®
Power MOSFET
V
DS
R
DS(on) max
(@V
GS
= 4.5V)
Q
g
20
0.022
48
V
Ω
A
A
1
2
3
4
8
D
S
S
S
G
7
D
nC
A
6
D
I
D
5
8.7
D
(@T
A
= 25°C)
SO-8
Top View
Features
Industry-standard pinout SO-8 Package
Compatible with Existing Surface Mount Techniques
RoHS Compliant, Halogen-Free
Benefits
Multi-Vendor Compatibility
Easier Manufacturing
Environmentally Friendlier
Increased Reliability
⇒
MSL1, Industrial qualification
Standard Pack
Form
Base Part
Number
Package Type
Orderable Part Number
Quantity
Tube/Bulk
Tape and Reel
95
4000
IRF7401PbF-1
IRF7401TRPbF-1
IRF7401PbF-1
SO-8
Absolute Maximum Ratings
Parameter
10 Sec. Pulsed Drain Current, V
GS
@ 4.5V
Max.
10
Units
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
8.7
A
7.0
35
P
D
@T
A
= 25°C
Power Dissipation
2.5
W
W/°C
V
Linear Derating Factor
0.02
± 12
5.0
V
GS
Gate-to-Source Voltage
dv/dt
T
J
,
T
STG
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
V/ns
°C
-55 to
+ 150
Thermal Resistance Ratings
Parameter
Typ.
Max.
Units
R
θ
JA
Maximum Junction-to-Ambient
50
°C/W
1
November 18, 2013
IRF7401PbF-1
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Min. Typ. Max. Units
20
0.044
V/°C Reference
to 25°C, I
D
= 1mA
Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage
V
V
GS
= 0V, I
D
= 250µA
Δ
V
(BR)DSS
/
Δ
T
J
Breakdown Voltage Temp. Coefficient
0.022
0.030
0.70
11
1.0
V
GS
= 4.5V, I
D
= 4.1A
V
GS
= 2.7V, I
D
= 3.5A
V
DS
= V
GS
, I
D
= 250µA
SV
DS
= 15V, I
D
= 4.1A
V
DS
= 16V, V
GS
= 0V
V
DS
= 16V, V
GS
= 0V, T
J
= 125 °C
V
GS
= 12V
R
DS(ON)
Static Drain-to-Source On-Resistance
Ω
V
GS(th)
g
fs
Gate Threshold Voltage
V
Forward
Transconductance
µA
I
DSS
I
GSS
Drain-to-Source Leakage Current
25
100
-100
48
5.1
20
13
72
65
92
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
nA
V
GS
= -12V
I
D
= 4.1A
nC V
DS
= 16V
V
GS
= 4.5V, See Fig. 6 and 12
Q
g
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
V
DD
= 10V
I
D
= 4.1A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 6.0
Ω
R
D
= 2.4
Ω,
See Fig. 10
D
S
L
D
L
S
Internal Drain Inductance
Internal Source Inductance
2.5
4.0
Between lead tip
nH
pF
G
and center of die contact
C
iss
C
oss
C
rss
Input Capacitance
1600
690
310
V
GS
= 0V
Output Capacitance
V
DS
= 15V
Reverse Transfer Capacitance
= 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
Parameter
Continuous Source Current
(Body Diode)
Min. Typ. Max. Units
Conditions
MOSFET symbol
showing the
D
S
I
S
3.1
A
G
I
S
M
Pulsed Source Current
(Body Diode)
integral reverse
35
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
1.0
V
T
J
= 25°C, I
S
= 2.0A, V
GS
= 0V
T
J
= 25°C, I
F
= 4.1A
39
42
59
63
ns
nC
Q
rr
t
on
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating;
pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width
≤
300µs; duty cycle
≤
2%.
Surface mounted on FR-4 board,
t
≤
10sec.
I
SD
≤
4.1A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
150°C
,
2
November 18, 2013
IRF7401PbF-1
1000
100
10
1000
100
10
VGS
7
.
5
V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
VGS
7.5V
5.0V
4.0V
3.5V
3.0V
2.5V
2.0V
TOP
TOP
BOTTOM 1.5V
BOTTOM 1.5V
1.5V
1.5V
20
μ
s PULSE WIDTH
20
μ
s PULSE WIDTH
T
A
= 25°C
T
J
= 150°C
A
A
1
1
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
100
10
2.0
1.5
1.0
0.5
0.0
I
= 6.9A
D
T
J
= 25°C
T =
150°C
J
V
DS
= 15V
20
μ
s PULSE WIDTH
V
= 4.5V
GS
1
A
5.0
A
1.5
2.0
2.5
3.0
3.5
4.0
4.5
-60 -40 -20
0
20 40 60 80
100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T ,
Junction Temperature (°C)
J
Fig 4.
Normalized On-Resistance
Fig 3.
Typical Transfer Characteristics
Vs. Temperature
3
November 18, 2013
IRF7401PbF-1
10
8
3000
2500
2000
1500
1000
500
I
= 4.1A
V =
16V
DS
V
C
C
C
= 0V,
f = 1MHz
D
GS
iss
rss
oss
= C
+ C
,
C
SHORTED
gs
gd
gd
ds
= C
= C
+ C
ds
gd
C
C
iss
6
oss
4
C
rss
2
FOR TEST CIRCUIT
SEE FIGURE 12
0
0
A
A
0
10
20
30
40
50
1
10
100
Q
, Total Gate Charge (nC)
V
, Drain-to-Source Voltage (V)
G
DS
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
10
1
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
T =
25°C
J
100us
1ms
T =
150°C
J
10ms
°
T =
25 C
A
J
°
T =
150 C
Single Pulse
V
GS
= 0V
A
0.1
0.1
1
10
100
0.0
1.0
2.0
3.0
4.0
V
, Drain-to-Source Voltage (V)
DS
V
, Source-to-Drain Voltage (V)
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
November 18, 2013
IRF7401PbF-1
10.0
8.0
6.0
4.0
2.0
0.0
R
D
V
DS
V
GS
D.U.T.
R
G
+
V
DD
–
4.5V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
V
DS
90%
25
50
75
100
125
150
°
T ,
Case Temperature
( C)
C
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
t
t
r
t
t
f
d(on)
d(off)
Ambient Temperature
Fig 10b.
Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D =
t /
t
1
2. Peak T
= P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
November 18, 2013
IRF7401PbF-1
Current Regulator
Same Type as D.U.
T
.
50K
Ω
.2
μ
F
.3
μ
F
12V
Q
G
+
4.5V
V
DS
D.U.
T
.
–
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Current Sampling Resistors
Charge
Fig 12a.
Basic Gate Charge Waveform
Fig 12b.
Gate Charge Test Circuit
6
November 18, 2013
IRF7401PbF-1
Peak Diode Recovery dv/dt Test Circuit
+
–
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.T
+
–
–
+
**
R
G
•
dv/dt controlled by R
G
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
+
–
*
V
DD
V
GS
*
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P
.
W.
Period
Period
D =
P.W.
V
[
=10V
] ***
GS
D.U.
T
. I
W
aveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
[
DD
]
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
]
SD
Ripple
≤
5%
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
Fig 13.
For N-Channel HEXFETS
7
November 18, 2013
IRF7401PbF-1
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCH
E
S
M
I
LLI
M
E
TERS
DIM
A
D
B
M
I
N
.0532
MAX
.0688
.0098
.020
M
I
N
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1
.
0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 B
A
S
IC
1.27 B
A
S
IC
0.635 B
A
S
IC
e1
.
025
B
A
S
IC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F
O
OT
P
RINT
8X 0.72 [.028]
NOT
E
S :
1. DI
M
E
N
S
I
O
N
I
N
G
&
T
O
L
ER
A
NC
I
N
G
P
ER
A
S
M
E Y14.5
M
–
1994.
2. CONT
R
O
L
LI
N
G DI
M
E
N
S I
O
N: M
I
LLI
M
E
T ER
3. DI
M
E
N
S
I
O
NS A
R
E SH
O
WN
I
N
M
I
LLI
M
E
TERS
[
IN
C
H
ES].
4. O
U
T
LINE
C
O
N
F
O
R
M
S T
O
J
E DEC
O
U T
L
INE
M
S
–
012
A
A.
5
6
7
DI
M
E
N
S I
O
N DO
E
S
N
O
T
I
N
C
L
U
D
E MO
L
D PR
O
T
R
USI
O
NS .
MO
L
D PR
O
T
RUSI
O
NS NOT
T
O E
X
C
E
ED
0
.15 [.006].
6.46 [.255]
DI
M
E
N
S I
O
N DO
E
S
N
O
T
I
N
C
L
U
D
E MO
L
D PR
O
T
R
USI
O
NS .
MO
L
D PR
O
T
RUSI
O
NS NOT
T
O E
X
C
E
ED
0
.25 [.010].
DI
M
E
N
S
I
O
N
I
S
T
H
E LEN
G
T
H
O
F
L
E
A
D
F
O
R
S
O
L
DERIN
G
TO
ASUBSTR
A
T
E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EX
A
M
P
LE: THIS IS
A
N
I
RF7101 (
M
O
S
FET)
DA
T
E
C
ODE (YWW)
P =
DE S I
G
NAT E S
L E AD
–
F R E E
PR
O
D
U
C
T (O
P
T
I
O
NA
L
)
Y =
L
A
S
T
D
I
G
I
T
O
F
T
HE
Y
E
A
R
WW =
W
E
EK
XXXX
F
7
101
IN
T
ER
N
A
T
I
ONAL
RE
C
T
IFIER
L
O
GO
A=
A
S
SE
M
B
LY
SITE
C
ODE
L
O
T CODE
P
A
R
T NU
M
B
ER
8
November 18, 2013
IRF7401PbF-1
SO-8 Tape and Reel
(Dimensions are shown in millimeters (inches))
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
330.00
(
1
2.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Qualification information
†
I
n
d
u
s
t
r
i
a
l
(
p
er
J
E
D
E
C
JES
D
47
F
††
g
u
i
d
e
l
in
e
s
)
Qualification le
v
e
l
MS L 1
Moisture Sensitivity Level
RoHS
c
o
m
pliant
SO-8
(
p
er
J
E
D
E
C
J-ST
D
-020D
††
Yes
)
†
Qualification standards can be found at International Rectifier’s web site:
http://www.irf.com/product-info/reliability
††
Applicable version of JEDEC standard at the time of product release
IR WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245, USA
9
November 18, 2013
