Infineon-Technologies-IRF7416TRPBF
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PD – 95137A
IRF7416PbF
HEXFET
®
Power MOSFET
l
Generation V Technology
l
Ultra Low On-Resistance
l
P-Channel Mosfet
l
Surface Mount
l
Available in Tape & Reel
l
Dynamic dv/dt Rating
l
Fast Switching
A
D
1
2
3
4
8
S
S
V
DSS
= -30V
7
D
6
5
S
G
D
D
R
DS(on)
= 0.02
Ω
l
Lead-Free
Top View
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low
on-resistance per silicon area.
This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
know
n
f
or, provide
s
t
h
e
d
esigne
r
w
it
h
a
n
e
xtremel
y
e
fficient
and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power
applications. With
these improvements, multiple devices
can be used in an application with dramatically reduced
board space.
The package is designed for vapor phase,
infra red, or wave soldering techniques.
Power dissipation
of greater than 0.8W is possible in a typical PCB mount
application.
SO-8
Absolute Maximum Ratings
Parameter
Max.
-10
Units
Continuous Drain Current, V
GS
@ -10V
Continuous Drain Current, V
GS
@ -10V
Pulsed Drain Current
I
I
I
@ T
A
= 25°C
D
D
A
-7.1
-45
@ T
A
= 70°C
DM
W
W/°C
V
Power Dissipation
2.5
P
@T
A
= 25°C
D
Linear Derating Factor
Gate-to-Source Voltage
0.02
± 20
V
GS
E
AS
Single Pulse Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
370
-5.0
mJ
dv/dt
V/ns
T
T
J
-55 to
+ 150
°C
Storage Temperature Range
STG
Thermal Resistance
Parameter
Max.
Units
R
θ
JA
Junction-to-Ambient
50
°C/W
1
06/29/11
IRF7416PbF
Static Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
Min. Typ. Max.
Units
-30 ––– –––
Conditions
V
GS
= 0V, I
D
= -250
μ
A
V
(BR)DSS
V
V
/ T
(BR)DSS
Δ
Δ
Breakdown Voltage Temp. Coefficient
––– -0.024 –––
V/°C Reference
to 25°C, I
D
= -1mA
J
––– –––
0.020
––– –––
0.035
-1.0 –––
-2.04
V
V
GS
= -10V, I
D
= -5.6A
GS
= -4.5V, I
D
= -2.8A
R
DS(on)
Static Drain-to-Source On-Resistance
Ω
V
GS(th)
gfs
I
DSS
Gate Threshold Voltage
V
S
V
DS
= V
GS
, I
D
= -250
μ
A
Forward Transconductance
Drain-to-Source Leakage Current
5.6
––– ––– -1.0
––– ––– -25
––– –––
V
DS
= -10V, I
D
= -2.8A
V
V
V
DS
= -24V, V
GS
= 0V
DS
= -24V, V
GS
= 0V, T
J
= 125°C
GS
= -20V
μ
A
I
GSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
––– –––
-100
––– ––– 100
nA
V
GS
= 20V
Dynamic Electrical
Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter Min.
Typ. Max.
Units
Total Gate Charge
Conditions
Q
g
–––
–––
–––
–––
–––
–––
–––
61
8.0
22
18
49
59
60
92
12
I
D
= -5.6A
Q
gs
Q
gd
t
d(on)
t
r
Gate-to-Source Charge
Gate-to-Drain (“Miller”) Charge
Turn-On Delay Time
Rise Time
V
DS
= -24V
nC
32
V
GS
= -10V, See Fig. 6 & 9
V
DD
= -15V
–––
–––
–––
–––
I
D
= -5.6A
ns
t
d(off)
t
f
Turn-Off Delay Time
Fall Time
R
G
= 6.2
Ω
R
D
= 2.7
Ω,
See Fig. 10
V
GS
= 0V
C
iss
C
oss
C
rss
Input Capacitance
––– 1700 –––
––– 890 –––
––– 410 –––
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -25V
ƒ = 1.0MHz, See Fig. 5
pF
Diode Characteristics
Parameter
Min. Typ. Max.
Units
Conditions
D
S
I
S
Continuous Source Current
MOSFET symbol
––– ––– -3.1
A
(Body Diode)
Pulsed Source Current
(Body Diode)
showing the
integral reverse
G
I
SM
––– –––
-45
p-n junction diode.
V
SD
t
rr
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
––– ––– -1.0
V
T
J
= 25°C, I
S
= -5.6A, V
GS
= 0V
T
J
= 25°C,I
F
= -5.6A
di/dt = 100A/
μ
s
–––
–––
56
99
85
ns
nC
Q
rr
150
Notes:
Repetitive rating;
pulse width limited by
I
SD
≤
-5.6A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
T
J
≤
150°C
,
max. junction temperature. ( See fig. 11 )
Starting T
J
= 25°C, L = 25mH
Pulse width
≤
300µs; duty cycle
≤
2%.
R
G
= 25
Ω
, I
AS
= -5.6A. (See Figure 12)
ꢀ
Surface mounted on FR-4 board,
t
≤
10sec.
2
IRF7416PbF
100
10
1
100
10
1
VGS
– 15V
– 10V
VGS
– 15V
– 10V
TOP
TOP
– 7.0V
– 5.5V
– 4.5V
– 4.0V
– 3.5V
– 7.0V
– 5.5V
– 4.5V
– 4.0V
– 3.5V
BOTTOM – 3.0V
BOTTOM – 3.0V
-3.0V
-3.0V
20
μ
s PULSE WIDTH
20
μ
s PULSE WIDTH
T
J
= 150°C
T
J
= 25°C
A
A
0.1
1
10
0.1
1
10
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Drain-to-Source Voltage (V)
DS
Fig 2.
Typical Output Characteristics
Fig 1.
Typical Output Characteristics
100
10
1
2.0
I
= -5.6A
D
T =
25°C
J
1.5
1.0
0.5
0.0
T =
150°C
J
V
DS
= -10V
20
μ
s PULSE WIDTH
5.5
A
V
= -10V
GS
A
3.0
3.5
4.0
4.5
5.0
-60 -40 -20
0
20 40 60 80
100 120 140 160
T ,
Junction Temperature (°C)
–
V
GS
, Gate-to-Source Voltage (V)
J
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
3
IRF7416PbF
4000
20
16
12
8
V
C
C
C
= 0V,
f = 1MHz
I
= -5.6A
GS
iss
rss
oss
D
= C
+ C
,
C
SHORTED
gs
gd
gd
ds
= C
V
= -24V
= -15V
DS
= C
+ C
ds
gd
V
DS
3000
2000
1000
0
C
iss
C
oss
C
rss
4
FOR TEST CIRCUIT
SEE FIGURE 9
0
A
A
1
10
100
0
20
40
60
80
100
V
, Drain-to-Source Voltage (V)
Q ,
Total Gate Charge (nC)
DS
G
Fig 5.
Typical Capacitance Vs.
Fig 6.
Typical Gate Charge Vs.
Drain-to-Source Voltage
Gate-to-Source Voltage
100
100
10
1
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100us
1ms
T =
150°C
J
10
T =
25°C
J
10ms
°
T =
25 C
A
°
T =
150 C
Single Pulse
J
V
GS
= 0V
1
0.1
A
1
10
100
0.4
0.6
0.8
1.0
1.2
-V ,
Drain-to-Source Voltage (V)
DS
-V ,
Source-to-Drain Voltage (V)
SD
Fig 8.
Maximum Safe Operating Area
Fig 7.
Typical Source-Drain Diode
Forward Voltage
4
IRF7416PbF
R
D
V
DS
Q
Q
G
V
GS
D.U.T.
-10V
Q
R
G
–
GS
GD
+
V
DD
V
G
-10V
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Charge
Fig 9a.
Basic Gate Charge Waveform
Fig 10a.
Switching Time Test Circuit
Current Regulator
Same Type as D.U.
T
.
t
t
r
t
t
f
d(on)
d(off)
50K
Ω
V
.2
μ
F
12V
GS
.3
μ
F
10%
–
V
+
DS
D.U.
T
.
V
GS
90%
-3mA
V
DS
I
I
D
G
Current Sampling Resistors
Fig 9b.
Gate Charge Test Circuit
Fig 10b.
Switching Time Waveforms
100
10
1
D = 0.50
0.20
0.10
0.05
P
2
DM
0.02
0.01
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
/ t
1
2. Peak T
= P
J
x Z
+ T
A
DM
thJA
0.1
0.0001
0.001
0.01
0.1
1
10
100
t ,
Rectangular Pulse Duration (sec)
1
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
5
IRF7416PbF
1000
800
600
400
200
0
I
L
D
V
DS
TOP
-2.5A
-4.5A
BOTTOM -5.6A
D.U.T
R
G
V
DD
A
I
AS
DRIVER
-20V
0.01
Ω
t
p
15V
Fig 12a.
Unclamped Inductive Test Circuit
I
AS
25
50
75
100
125
150
o
Starting T
, Junction Temperature ( C)
J
Fig 12c.
Maximum Avalanche Energy
Vs. Drain Current
t
p
V
(BR)DSS
Fig 12b.
Unclamped Inductive Waveforms
6
IRF7416PbF
Peak Diode Recovery dv/dt Test Circuit
+
–
Circuit Layout Considerations
•
Low Stray Inductance
•
Ground Plane
•
Low Leakage Inductance
Current Transformer
D.U.T
+
–
–
+
**
R
G
•
dv/dt controlled by R
G
•
I
SD
controlled by Duty Factor “D”
•
D.U.T. – Device Under Test
+
–
*
V
DD
V
GS
*
*
Reverse Polarity for P-Channel
** Use P-Channel Driver for P-Channel Measurements
Driver Gate Drive
P
.
W.
Period
Period
D =
P.W.
V
=10V
] ***
GS
[
D.U.
T
. I
W
aveform
SD
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.
T
. V
W
aveform
DS
Diode Recovery
dv/dt
V
DD
]
[
Re-Applied
Voltage
Body Diode
Forward Drop
Inductor Curent
I
[
SD
]
Ripple
≤
5%
***
V
GS
= 5.0V for Logic Level and 3V Drive Devices
Fig 13.
For P-Channel HEXFETS
7
IRF7416PbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
INCH
E
S
M
I
LLI
M
E
TERS
DIM
A
D
B
M
I
N
.0532
MAX
.0688
.0098
.020
M
I
N
1.35
0.10
0.33
0.19
4.80
3.80
MAX
1.75
0.25
0.51
0.25
5.00
4.00
5
A
E
A1
.
0040
b
c
D
E
.013
8
1
7
2
6
3
5
.0075
.189
.0098
.1968
.1574
6
H
0.25 [.010]
A
.1497
4
e
.050 B
A
S
IC
1.27 B
A
S
IC
0.635 B
A
S
IC
e1
.
025
B
A
S
IC
H
K
L
.2284
.0099
.016
0°
.2440
.0196
.050
8°
5.80
0.25
0.40
0°
6.20
0.50
1.27
8°
e
6X
y
e1
A
K x 45°
A
C
y
0.10 [.004]
8X c
A1
B
8X L
8X b
0.25 [.010]
7
C
F
O
OT
P
RINT
8X 0.72 [.028]
NOT
E
S :
1. DI
M
E
N
S
I
O
N
I
N
G
&
T
O
L
ER
A
NC
I
N
G
P
ER
A
S
M
E Y14.5
M
–
1994.
2. CONT
R
O
L
LI
N
G DI
M
E
N
S I
O
N: M
I
LLI
M
E
T ER
3. DI
M
E
N
S
I
O
NS A
R
E SH
O
WN
I
N
M
I
LLI
M
E
TERS
[
IN
C
H
ES].
4. O
U
T
LINE
C
O
N
F
O
R
M
S T
O
J
E DEC
O
U T
L
INE
M
S
–
012
A
A.
5
6
7
DI
M
E
N
S I
O
N DO
E
S
N
O
T
I
N
C
L
U
D
E MO
L
D PR
O
T
R
USI
O
NS .
MO
L
D PR
O
T
RUSI
O
NS NOT
T
O E
X
C
E
ED
0
.15 [.006].
6.46 [.255]
DI
M
E
N
S I
O
N DO
E
S
N
O
T
I
N
C
L
U
D
E MO
L
D PR
O
T
R
USI
O
NS .
MO
L
D PR
O
T
RUSI
O
NS NOT
T
O E
X
C
E
ED
0
.25 [.010].
DI
M
E
N
S
I
O
N
I
S
T
H
E LEN
G
T
H
O
F
L
E
A
D
F
O
R
S
O
L
DERIN
G
TO
ASUBSTR
A
T
E.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
E
X
A
M
P
LE: THIS IS
A
N
I
RF7101 (
M
O
S
FET)
D
A
T
E
C
ODE (YWW)
P =
DE S I
G
NAT E S
L E AD
–
F R E E
PR
O
D
U
C
T (O
P
T
I
O
NA
L
)
Y =
L
A
S
T
D
I
G
I
T
O
F
T
HE
Y
E
A
R
WW =
W
E
EK
XXXX
F
7
101
IN
T
ER
N
A
T
I
ONAL
RE
C
T
IFIER
L
O
GO
A=
A
S
SE
M
B
LY
SITE
C
ODE
L
O
T CODE
P
A
R
T NU
M
B
ER
8
IRF7416PbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING
DIMENSION : MILLIMETER.
2. ALL
DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE
CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Consumer market.
Qualifications Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS:
101N.Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
9
